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Michael Guillorn received a PhD in Materials Science and Engineering from the University of Tennessee, Knoxville in 2003. While working on his PhD, Michael worked at the Oak Ridge National Laboratory as a technical staff member. Following the completion of his PhD, Michael worked as a Research Associate at the Cornell Nanofabrication Facility. in 2006, Michael joined the IBM TJ Watson Research Center as a research staff member to undertake research on high density CMOS scaling. In 2010 Michael became the manager of the Nanostructures and Exploratory Device Integration research group. In 2011, Michael led the team that set the record for SRAM bitcell density scaling yielding the smallest Si CMOS circuit reported at that time. Michael served as the program manager and technology lead for gate-all-around (GAA) device technology development from 2012 to 2016. This work culminated in the successful transition of this device technology from the research demonstration and pathfinding phase to 300 mm development. In 2015 Michael became the manager of the Lithography and Technology Research group at IBM. This group is primarily focused on designing resolution enhancement technique (RET) and optical proximity effect correction (OPC) solutions for EUV and 193i lithography. Michael is actively engaged in device and lithography aspects of design technology co-optimization (DTCO) for advanced semiconductor technology nodes. Michael has authored over 80 publications in peer-reviewed journals, co-authored 4 book chapters and holds over 120 issued US Patents.