Dr. Martin M. Frank is a Research Staff Member at IBM T.J. Watson Research Center in Yorktown Heights, NY. His research focuses on new materials for CMOS transistor scaling, including high-permittivity (high-k) gate dielectrics, metal gate electrodes, high-carrier-mobility materials such as Ge and InGaAs, and ferroelectrics.
In 1996, Dr. Frank earned a Diplom degree in physics from Ruhr-Universität Bochum, Germany. He then joined Fritz-Haber-Institut der Max-Planck-Gesellschaft in Berlin, Germany, studying the catalytic activity of oxide-supported metal nanoparticles using surface science techniques in ultra-high vacuum. In 2000, Dr. Frank received a Ph.D. degree in physics from Humboldt-Universität zu Berlin, and was awarded the Otto Hahn Medal for outstanding scientific achievements. During a postdoctoral appointment at Rutgers University, he commenced his work on high-k dielectrics, while also investigating self-assembled monolayers for molecular electronics. In 2003, Dr. Frank joined IBM. During an assignment to IMEC in Leuven, Belgium, he worked in the field of photoresist chemistry. In 2007, he was recognized as an IBM Master Inventor. In 2013, he received an IBM Research Division Award for his contributions to high-k/metal gate technology.
Dr. Frank has authored or co-authored more than 90 publications including multiple review articles and book chapters, has given more than 60 invited and contributed presentations, and holds more than 30 U.S. patents. He serves on the Board of Delegates of the European Materials Research Society (E-MRS), and on the Editorial Board of the Journal 'Materials'. From 2008 to 2011, he served on the IEEE Semiconductor Interface Specialists Conference (SISC) Executive Committee, in 2010 as a General Chair. From 2006 to 2010, he served on the Advisory Board of the German Academic International Network (GAIN). He chaired symposia at the 2006 and 2008 E-MRS Spring Meetings and at the 2006 Seventh International Conference on Microelectronics and Interfaces (AVS-ICMI).
Dr. Frank is a Senior Member of the Institute of Electrical and Electronics Engineers (IEEE) and a member of the New York Academy of Sciences (NYAS), the Materials Research Society (MRS), and the Deutsche Physikalische Gesellschaft (German Physical Society, DPG).