Jie Yang  Jie Yang photo       

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Device Engineer for 7nm/10nm R&D
Albany, Malta


Professional Associations

Professional Associations:  American Physical Society (APS)  |  IEEE Electron Devices Society (EDS)  |  IEEE Member  |  Sigma Xi

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More information:  Google Scholar


Dr. Yang pursued his PhD from Yale University, New Haven since 2009, and graduated in 2015. In 2011, Dr. Yang worked at IBM Semiconductor Research and Development Center (SRDC) as an intern. After graduation in 2015, he was offered the advisory scientist position by IBM research on a full-time basis.

During his PhD period, Dr. Yang studied the interface physics for Gallium Nitride based power electronics. During his internship at IBM SRDC, Dr. Yang worked on the software development for the data extraction infrastructure and studied the Local Layout Effects on the 22nm hardware. At IBM as a full-time employee, he worked on the next generation integrated circuit technology, design and fabrication the nanoscale switches, called FinFET (Fin Field Effect Transistor) with novel materials, Silicon Germanium. In this project, he overhauled the baseline for the advanced FinFET manufacture, and brought it to maturity to demonstrate key functional circuits.

Dr. Yang serves as a reviewer for mulitple peer-review journals, including Applied Physics Letter, IEEE Electronic Device Letter, Transaction on Electronic Devices, Transaction on Semiconductor Manufacturing, Journal of the Electron Devices Society, Electronic Letter, Micro & Nano Letter, Solid State Electronics, Micro and Nanosystem, Materials Science in Semiconductor Processing, American Journal of Nanosciences.