20th Anniversary Spin-Torque MRAM Symposium - overview
20th Anniversary Spin-Torque MRAM Symposium
IBM's 20th Anniversary Spin-Torque MRAM Symposium will be held on Monday, November 7, 2016 at the IBM T. J. Watson Research Center in Yorktown Heights, New York.
This symposium is being held to honor the 20th anniversary of John Slonczewski’s landmark paper on spin-transfer-torque, published in the Journal of Magnetism and Magnetic Materials in 1996. Entitled, Current-driven excitation of magnetic multilayers, John’s paper presented the breakthrough idea that a current passing through a sandwich of two magnetic metal layers surrounding a non-magnetic metal spacer could excite sufficient spin-transfer-torque to switch one of the magnetic layers back and forth. This paper built on John’s earlier work describing milder consequences of spin-transfer torque in magnetic tunnel junctions, published in Physical Review B in 1989. John’s brilliant ideas reported in these two papers sparked a tremendous body of work to develop Spin-Transfer-Torque MRAM that continues to this day. Development efforts for Spin-Torque MRAM are now maturing, with the first perpendicularly magnetized Spin-Torque MRAM products widely expected in the next two years. This is a fitting time to look back on the past twenty years of research and development in this exciting field.
The symposium will consist of a full day of half-hour talks from leaders in the field of spin torque science and technology, both from academia and industry. In addition to John’s talk, we will have talks covering topics ranging from the latest breakthroughs in science to the commercialization of Spin Torque MRAM. There will be a poster session for graduate students and post-docs to share their results on spin-torque related work. Lunch for all symposium attendees will be included. The symposium is free and open to the entire community, however registration by October 7th is required. Registration is now closed.
Questions? Contact Daniel Worledge at firstname.lastname@example.org.