Timothy J. Dalton  Timothy J. Dalton photo       

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CTO Science & Solutions, Member IBM Academy of Technology, Principal RSM & Master Inventor
Thomas J. Watson Research Center, Yorktown Heights, NY USA
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Professional Associations

Professional Associations:  American Vacuum Society

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More information:  KACST  |  EGNC  |  Linked In  |  IBM Academy of Technology  |  Twitter


2009

Leveraging Microelectronics Research to Enable A Smarter Planet
T J Dalton
Bulletin of the American Physical Society54, APS, 2009


2008

Method of etching dual pre-doped polysilicon gate stacks using carbon-containing gaseous additions
Y Zhang, T J Dalton, W Natzle
US Patent 7,344,965, 2008 - Google Patents, Google Patents
US Patent 7,344,965

Plasma ash processing solutions for advanced interconnect technology
NCM Fuller, MA Worsley, L Tai, S Bent, C Labelle, J Arnold, T Dalton
Thin Solid Films 516(11), 3558--3563, Elsevier, 2008


2007

ETCHING APPARATUS FOR SEMICONDUTOR FABRICATION
T J Dalton, E F Gallagher, L M Kindt, C W Thiel, A J Watts
US Patent App. 11/ ..., 2007 - Google Patents, Google Patents
US Patent App. 11/962,271

Non-Poisoning Dual Damascene Patterning Scheme for Low-k and Ultra Low-k BEOL
W Cote, D Edelstein, C Bunke, P Biolsi, W Wille, H Baks, R Conti, T Dalton, T Houghton, W Li
Advanced Metallization Conference 2006(AMC 2006), 2007

Effect of radical species density and ion bombardment during ashing of extreme ultralow-k interlevel dielectric materials
MA Worsley, SF Bent, NCM Fuller, TL Tai, J Doyle, M Rothwell, T Dalton
Journal of Applied Physics101, 013305, 2007


2006

Analysis of Plasma-Induced Modification of ULK and eULK Materials: Dual Damascene Processing Challenges for 45nm (K⩽ 2.4) and Beyond BEOL Technologies
NCM Fuller, MA Worsley, S Nitta, T Dalton, TL Tai, S Bent, T Magbitang, G Dubois, R Miller, W Volksen, others
Interconnect Technology Conference, 2006 International, pp. 24--26

Analysis of Plasma-Induced Modification of ULK and eULK Materials: Dual Damascene Processing Challenges for 45nm (k < 2.4) and Beyond BEOL Technologies
NCM Fuller, MA Worsley, S Nitta, T Dalton, TL Tai, S Bent, T Magbitang, G Dubois, R Miller, W Volksen, others
Interconnect Technology Conference, 2006 International, pp. 24--26


2005

90 nm SiCOH Technology in 300 mm Manufacturing
LA Clevenger, M Yoon, D Edelstein, A Cowley, C Davis, B Agarwala, P Biolsi, K Chanda, S Cohen, W Cote, others
Advanced Metallization Conference 2004(AMC 2004), 2005

Silicon-on-insulator MOSFETs with hybrid crystal orientations
M Yang, K Chan, A Kumar, S H Lo, J Sleight, L Chang, R Rao, S Bedell, A Ray, J Ott, others
VLSI Technology, 2006, pp. R--Meyer, 2005

Extendibility of PVD barrier/seed for BEOL Cu metallization
C C Yang, D Edelstein, L Clevenger, A Cowley, J Gill, K Chanda, A Simon, T Dalton, B Agarwala, E Cooney III, others
Interconnect Technology Conference, 2005, pp. 135--137


2004

Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing
TJ Dalton, N Fuller, C Tweedie, D Dunn, C Labelle, S Gates, M Colburn, ST Chen, T Lai, R Dellaguardia, others
Interconnect Technology Conference, 2004, pp. 154--156

Aggressively scaled (0.143 $\mu$m 2) 6T-SRAM cell for the 32 nm node and beyond
DM Fried, JM Hergenrother, AW Topol, L Chang, L Sekaric, JW Sleight, SJ McNab, J Newbury, SE Steen, G Gibson, others
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International, pp. 261--264

Successful dual damascene integration of extreme low k materials (k< 2.0) using a novel gap fill based integration scheme
S Nitta, S Purushothaman, S Smith, M Krishnan, D Canaperi, T Dalton, W Volksen, RD Miller, B Herbst, C-K Hu, others
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International, pp. 321--324

Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
T Standaert, C Hedlund, EA Joseph, GS Oehrlein, TJ Dalton
Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and Films22, 53, 2004

Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology
D Edelstein, C Davis, L Clevenger, M Yoon, A Cowley, T Nogami, H Rathore, B Agarwala, S Arai, A Carbone, others
Interconnect Technology Conference, 2004, pp. 214--216

Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
D Edelstein, H Rathore, C Davis, L Clevenger, A Cowley, T Nogami, B Agarwala, S Arai, A Carbone, K Chanda, others
Reliability Physics Symposium Proceedings, 2004, pp. 316--319


2003

IMPROVED CD UNIFORMITY OF CHROME ETCH TO PHOTOMASK PROCESS
S B Crawford, T J Dalton, T B Faure, C K Huynh, M L Steen, T M Wagner
US Patent App. 10/ ..., 2003 - Google Patents, Google Patents
US Patent App. 10/605,801

The Study of Modified Layers in SiCOH Dielectrics using Spectroscopic Ellipsometry
M A Worsley, S F Bent, S M Gates, K Kumar, T Dalton, J C Hedrick
MRS Proceedings, pp. 235--240, 2003


2001

METHOD TO DECREASE FLUORINE CONTAMINATION IN LOW DIELECTRIC CONSTATNT FILMS
T H Dalton, B E E Kastenmeier, T E Standaert
US Patent App. 10/034,859, 2001 - Google Patents, Google Patents
US Patent App. 10/034,859

Opportunities and challenges in ultra low k dielectrics for interconnect applications
S Nitta Purushothaman, SV Ryan, JG Narayan, C Krishnan, M Cohen, S Whiteha S Gates
2001 - lw20.com


2000

Refining the mouse chromosomal location of Cdm, the major gene associated with susceptibility to cadmium-induced testicular necrosis
T P Dalton, M L Miller, X Wu, A Menon, E Cianciolo, R A McKinnon, P W Smith, L J Robinson, D W Nebert
Pharmacogenetics and Genomics 10(2), 141, 2000

Low open-area endpoint detection using a PCA-based T2 statistic and Q statistic on optical emission spectroscopy measurements
D A White, B E Goodlin, A E Gower, D S Boning, H Chen, H H Sawin, T J Dalton
Semiconductor Manufacturing, IEEE Transactions on 13(2), 193--207, IEEE, 2000

A high performance 0.13 $\mu$m copper BEOL technology with low-k dielectric
RD Goldblatt, B Agarwala, MB Anand, EP Barth, GA Biery, ZG Chen, S Cohen, JB Connolly, A Cowley, T Dalton, others
Interconnect Technology Conference, 2000, pp. 261--263


1999

Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch
PJ Matsuo, T Standaert, SD Allen, GS Oehrlein, TJ Dalton
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures17, 1435, 1999

Patterning of fluorine-, hydrogen-, and carbon-containing SiO-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO
T Standaert, PJ Matsuo, SD Allen, GS Oehrlein, TJ Dalton
Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and Films17, 741, 1999


1998

High-density, inductively coupled plasma etch of sub half-micron critical layers: Transistor polysilicon gate definition and contact formation
AC Westerheim, RD Jones, PJ Mager, JH Dubash, TJ Dalton, MW Goss, SK Baum, SK Dass
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures16, 2699, 1998


1997

Production evaluation of real-time statistical process control on a sub-0.5 $\mu$m inductively coupled metal etch process
E D Boskin, T J Dalton
Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and Films 15(3), 1371--1376, AVS, 1997


1994

Plasma etch endpoint via interferometric imaging
D S Boning, J L Claman, K S Wong, T J Dalton, H H Sawin
American Control Conference, 1994, pp. 897--901



1990

A profile evolution model with redeposition Scott C. Jackson EI du Pont de Nemours and Company, Inc. Engineering Technology Laboratory Wilmington, DE 19880-0304
T J Dalton
Dry processing for submicrometer lithography: 12-13 October 1989, Santa Clara, California1185, 225, Society of Photo Optical, 1990


Year Unknown