Joanna L. Batstone  Joanna L. Batstone photo       

contact information

VP and Lab Director, IBM Research-Australia, CTO IBM ANZ
IBM Research - Australia, Carlton, VIC 3153
  +61dash4dash2885dash0360

links



1996

Kinetic Studies of Nanoscale Crystallization in Electronic Materials
C Hayzelden, JL Batstone
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, pp. 73--86, 1996



1995

STRUCTURAL AND ELECTRONIC PROPERTIES OF DEFECTS IN SEMICONDUCTORS
JL Batstone
Proceedings: microscopy and microanalysis 1995, 4, Begell House Publishers


1994

Solid State Phenom
JL Batstone, C Hayzelden
1994 - Vol, Vol

High Resolution In Situ TEM Studies of Silicide-Mediated Crystallization of Amorphous Silicon
C Hayzelden, JL Batstone
Materials Research Society Symposium Proceedings, pp. 579--579, 1994

Microscopic processes in crystallization
JL Batstone, C Hayzelden
DIFFUSION AND DEFECT DATA PART B SOLID STATE PHENOMENA, pp. 257--257, 1994


1993


Stability of visible luminescence from porous silicon
JL Batstone, MA Tischler, RT Collins
Applied Physics Letters62, 2667, 1993


In situ crystallization of amorphous silicon in the transmission electron microscope
JL Batstone
Philosophical Magazine A 67(1), 51--72, Taylor \& Francis, 1993


1992

Dynamic studies of silicide-mediated crystallization of amorphous silicon
C Hayzelden, JL Batstone
PROCEEDINGS OF THE ANNUAL MEETING-ELECTRON MICROSCOPY SOCIETY OF AMERICA, pp. 1352--1352, 1992

In situ crystallization of amorphous silicon
JL Batstone
PROCEEDINGS OF THE ANNUAL MEETING-ELECTRON MICROSCOPY SOCIETY OF AMERICA, pp. 1346--1346, 1992

JW Steeds and PJ Wright
JL Batstone
Philo. Mag66, 609, 1992

Materials Interfaces: Atomic-level Structure and Properties
D Wolf, S Yip
1992 - books.google.com

Epitaxy of semiconductor thin films
JL Batstone
Chapman \& Hall(UK), 1992,, 316--335

Stacking fault asymmetry in epitaxial films of mocvd znse/gaas (001)
JL Batstone, JW Steeds, PJ Wright
Philosophical Magazine A 66(4), 609--620, Taylor \& Francis, 1992



1991

Twin intersections in silicon on sapphire
JL Batstone
Philosophical Magazine Part B 63(5), 1037--1050, Taylor \& Francis, 1991


1990

MOTION OF CRYSTAL/CRYSTAL AND CRYSTAL/AMORPHOUS INTERFACES JL BATSTONE
JL BATSTONE
High resolution electron microscopy of defects in materials: symposium held April 16-18, 1990, San Francisco, California, USA, pp. 79

Growth and characterization of ultrathin cobalt silicide films on Si (211) and(311)
J M Phillips, JL Batstone, JC Hensel, I Yu, M Cerullo
Journal of Materials Research 5(5), 1032--41, 1990


1989

DISLOCATION STRUCTURE OF SILICON ON SAPPHIRE
M Aindow, JL Batstone, L Pfeiffer, JM Phillips, RC Pond
Characterization of the structure and chemistry of defects in materials: symposium held November 28-December 3, 1988, Boston, Massachusetts, USA, pp. 373, 1989

BONDING CONFIGURATIONS AT EPITAXIAL CaF2/Si INTERFACES
JL BATSTONE, J M PHILLIPS
High resolution microscopy of materials: symposium held November 29-December 1, 1988, Boston, Massachusetts, USA, pp. 351, 1989

Radiation-enhanced diffusion of implanted impurities in amorphous Si
F Priolo, JM Poate, DC Jacobson, JL Batstone, SU Campisano
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 39(1-4), 343--346, Elsevier, 1989

Epitaxial recrystallization and diffusion phenomena in amorphous silicon produced by MeV ion beams
JM Poate, F Priolo, DC Jacobson, JL Batstone, MO …
Nuclear Instruments and Methods in Physics Research Section …, 1989 - adsabs.harvard.edu


Dependence of the structural and electrical properties of ultrathin cobalt silicide films on formation conditions.
J M Phillips, JL Batstone, JC Hensel, M Cerullo, FC Unterwald
Journal of Materials Research 4(1), 144--155, 1989




1988

TRANSMISSION ELECTRON MICROSCOPY OF IN-SITU DEPOSITED FILMS ON SILICON
JM Gibson, JL Batstone, MY Lanzerotti, E Liverpool
Evaluation of Advanced Semiconductor Materials by Electron Microscopy: proceedings of a NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy, held September 12-17, 1988, in Bristol, pp. 295

EFFECT OF ATOMIC STRUCTURE AT THE EPITAXIAL CaF2/Si (lll) INTERFACE ON ELECTRICAL PROPERTIES JL BATSTONE, JULIA M. PHILLIPS AND EC HUNKE
JL BATSTONE
Epitaxy of semiconductor layered structures: symposium held November 30-December 4, 1987, Boston, Massachusetts, USA, pp. 45, 1988

HOT ELECTRON TRANSISTORS USING Si/CoSi2
AFJ LEVI, RT TUNG, JL BATSTONE, M ANZLOWAR
Epitaxy of semiconductor layered structures: symposium held November 30-December 4, 1987, Boston, Massachusetts, USA, pp. 361, 1988

GROWTH OF THIN EPITAXIAL CoSi2 LAYERS ON Si (lOO)
SM YALISOVE, RT TUNG, JL BATSTONE
Heteroepitaxy on silicon: fundamentals, structure, and devices: symposium held April 5-8, 1988, Reno, Nevada, USA, pp. 439

NEW DIRECTIONS IN THE GROWTH OF EPITAXIAL INSULATORS AND METALS ON SILICON
J M Phillips, JL Batstone, JC Hensel, M Hill
Heteroepitaxy on silicon: fundamentals, structures, and devices: symposium held April 4-8, 1988, Reno, Nevada, USA, pp. 403

NUCLEATION AND GROWTH OF ULTRATHIN EPITAXIAL METAL SILICIDES ON SILICON JL BATSTONE, RT TUNG, JULIA M. PHILLIPS AND JM GIBSON
JL BATSTONE
Epitaxy of semiconductor layered structures: symposium held November 30-December 4, 1987, Boston, Massachusetts, USA, pp. 253, 1988

THE EFFECT OF FORMATION CONDITIONS ON THE STRUCTURAL AND ELECTRICAL PROPERTIES OF ULTRATHIN COBALT SILICIDE FILMS
J M Phillips, JL Batstone, JC Hensel, M Cerullo, FC Unterwald
Epitaxy of semiconductor layered structures: symposium held November 30-December 4, 1987, Boston, Massachusetts, USA, pp. 389, 1988

Batstone and Phillips reply
JL Batstone, J M Phillips
Physical Review Letters 61(19), 2275--2275, APS, 1988

Trapping of Au in Si during pulsed laser irradiation: A comparison with ion beam induced segregation
F Priolo, JM Poate, DC Jacobson, JL Batstone, JS Custer, M O Thompson
Applied Physics Letters53, 2486, 1988



Twin formation and Au segregation during ion-beam-induced epitaxy of amorphous Si
F Priolo, JL Batstone, JM Poate, J Linnros, DC Jacobson, M O Thompson
Applied Physics Letters52, 1043, 1988

ULTRATHIN SINGLE CRYSTAL CoSi2 LAYERS ON Si (lll) AND Si (lOO)
RT TUNG, JL BATSTONE, SM YALISOVE
Epitaxy of semiconductor layered structures: symposium held November 30-December 4, 1987, Boston, Massachusetts, USA, pp. 265, 1988

Control of epitaxial orientation of Si on CoSi2 (111)
RT Tung, JL Batstone
Applied Physics Letters52, 1611--1613, 1988

Michael 0. Thompson
F Priolo, JL Batstone, JM Poate, J Linnros, DC …
Appl. Phys. Lett, 1988

Radiation-enhanced diffusion of Au in amorphous Si
F Priolo, JM Poate, DC Jacobson, J Linnros, JL Batstone, SU Campisano
Applied Physics Letters52, 1213, 1988



Control of epitaxial orientation of Si on CoSi (111)
RT Tung, JL Batstone
Applied Physics Letters, 1988 - link.aip.org

Control of pinholes in epitaxial CoSi layers on Si (111)
RT Tung, JL Batstone
Applied Physics Letters52, 648, 1988

‘‘Coreless defects’’and the continuity of epitaxial NiSi/Si (100) thin films
JL Batstone, JM Gibson, RT Tung, AFJ Levi
Applied Physics Letters52, 828, 1988

Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si
JM Poate, J Linnros, F Priolo, DC Jacobson, JL Batstone, M O Thompson
Physical Review Letters 60(13), 1322--1325, APS, 1988




1987

AT\&T Bell Laboratories, Murray Hill NJ 07974
JL BATSTONE, J M PHILLIPS, JM GIBSON
Heteroepitaxy on silicon II: symposium held April 21-23, 1987, Anaheim, California, USA, pp. 445

ELECTRON TRANSPORT THROUGH EPITAXIAL METAL/SEMICONDUCTOR HETEROSTRUCTURES
AFJ LEVI, RT TUNG, JL BATSTONE, JM GIBSON, M ANZLOWAR, A CHANTRE
Interfaces, superlattices, and thin films: symposium held December 1-6, 1986, Boston, Massachusetts, USA, pp. 271, 1987

ELECTRICAL TRANSPORT IN ULTRATHIN FILMS OF CoSi2 ON Si (lU)
JC HENSEL, JM PHILLIPS, JL BATSTONE, WM AUGUSTYNIAK, FC UNTERWALD
Heteroepitaxy on silicon II: symposium held April 21-23, 1987, Anaheim, California, USA, pp. 427


THE EFFECT OF RAPID THERMAL ANNEALING ON HETEROEPITAXIAL STRUCTURES
J M Phillips, JL Batstone, L Pfeiffer
Heteroepitaxy on silicon II: symposium held April 21-23, 1987, Anaheim, California, USA, pp. 365

Rapid thermal processing to improve the epitaxy of(100) silicon on(11@ u-02) sapphire.
L Pfeiffer, JM Phillips, KE Luther, KW West, JL Batstone, F Stevie
Applied Physics Letters 50(8), 466--468, 1987

High-resolution electron microscopy of interfaces and surfaces
JM Gibson, ML McDonald, JL Batstone, JM Phillips
Ultramicroscopy 22(1-4), 35--46, Elsevier, 1987

Correlation of electrical properties with structure imaging of semiconductor interfaces
JL Batstone, J M Gibson, R T Tung
Materials Research Society Symposium Proceedings, 82 pp, 1987

Rapid Thermal Processing to Improve the Quality of (100) Silicon on (1102) Sapphire
KE Luther, KW West, JL Batstone, FA Stevie, JEA …
Appl. Phys. Lett., 1987

J. M. Poate, and KW West
A E White, KT Short, JL Batstone, DC Jacobson
Appl. Phys. Lett 50(1), 1987

Rapid thermal processing to improve the epitaxy of (100) silicon on (1102) sapphire
KE Luther, KW West, JL Batstone, FA Stevie, JEA …
Applied Physics Letters, 1987 - link.aip.org

Subboundary-free zone-melt recrystallization of thin-film silicon
L Pfeiffer, AE Gelman, KA Jackson, KW West, JL Batstone
Applied Physics Letters51, 1256, 1987

Mechanisms of buried oxide formation by ion implantation
A E White, KT Short, JL Batstone, DC Jacobson, JM Poate, KW West
Applied Physics Letters50, 19, 1987

Electrical and structural characterization of ultrathin epitaxial CoSi on Si (111)
J M Phillips, JL Batstone, JC Hensel, M Cerullo
Applied Physics Letters51, 1895, 1987

In situ study of the molecular beam epitaxy of CoSi 2 on (111) Si by transmission electron …
JM Gibson, JL Batstone, RT Tung
Applied Physics Letters, 1987 - adsabs.harvard.edu


1986

Si-on-SiO structures by lamp annealing of oxygen implanted Si
GK Cellar, JL Batstone, KW West, PLF Hemment, KJ Peeson
Proc, 1986

The role of implant temperature in the formation of thin buried oxide layers
A E White, KT Short, LN Pfeiffer, KW West, JL Batstone
Beam-Solid Interactions and Transient Processes Symposium, Boston, MA, USA, pp. 585--590, 1986


1985

TEM and CL characterization of dislocations in OMCVD ZnSe
JL Batstone, JW Steeds
Microscopy of semiconducting materials: proceedings of the Royal Microscopical Society conference, pp. 383, 1985



1984


Luminescence studies of individual dislocations in II-VI (ZnSe) and III-V (InP) semiconductors
S Myhajlenko, JL Batstone, HJ Hutchinson, JW Steeds
Journal of Physics C: Solid State Physics17, 6477--6492, Institute of Physics Publishing, 1984


1983

Spatial distribution of donors in MOCVD ZnSe
M Grande, JL Batstone, JW Steeds
Microscopy of semiconducting materials, 1983: proceedings of the Institute of Physics Conference held in St, pp. 337


Year Unknown



Microscopic Processes in Crystallisation
P Semiconductors III, JL Batstone, C Hayzelden
scientific.net, 0


Sobboyndary-free zone-melt recrystallization of thin-film s
L Pfeiffer, AE Gelman, КA Jackson, КW West, JL Batstone
... Pfeiffer, AE Gelman, КA Jackson, КW West, JL Batstone, 0


In sita study of the molecular beam epitaxy of C{\copyright} Sf2 on (111) Si by transmission electron microscopy and diffraction
JM Gibson, JL Batstone, RT Tung
JM Gibson, JL Batstone , RT Tung, 0


Solid State Phenomena, vols. 37-38 (1994);“
JL Batstone, others
Microscopic Processes in Crystallization, 257--268, 0