Cyril Cabral Jr  Cyril Cabral Jr photo       

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Research Staff Member: Materials Science / Metallurgy
Thomas J. Watson Research Center, Yorktown Heights, NY USA
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2009

Method for reduction of soft error rates in integrated circuits
C Cabral Jr, M S Gordon, K P Rodbell
US Patent 7,601,627, 2009 - freepatentsonline.com
US Patent 7,601,627

MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURE
C CABRAL JR, K P RODBELL, B BAKER, Q HUANG
WO Patent WO/2009/ ..., 2009 - wipo.int
WO Patent WO/2009/101,040

STRUCTURE FOR REDUCTION OF SOFT ERROR RATES IN INTEGRATED CIRCUITS
C Cabral Jr, M S Gordon, K P Rodbell
2009 - freepatentsonline.com



2008

Method of forming an interconnect structure diffusion barrier with high nitrogen content
C Cabral Jr, S K Kaldor, H Kim, S M Rossnagel
2008 - freepatentsonline.com

Direct evidence for abrupt postcrystallization germanium precipitation in thin phase-change films of Sb--15 at.\% Ge
C Cabral Jr, L Krusin-Elbaum, J Bruley, S Raoux, V Deline, A Madan, T Pinto
Applied Physics Letters93, 071906, 2008

Alpha-particle-induced upsets in advanced CMOS circuits and technology
DF Heidel, KP Rodbell, EH Cannon, C Cabral Jr, MS Gordon, P Oldiges, HHK Tang
IBM Journal of Research and Development 52(3), 225--232, IBM Corp., 2008

Single-event-upset and alpha-particle emission rate measurement techniques
MS Gordon, KP Rodbell, DF Heidel, C Cabral Jr, EH Cannon, DD Reinhardt
IBM Journal of Research and Development 52(3), 265--273, IBM Corp., 2008

Process options of forming silicided metal gates for advanced CMOS devices
R S Amos, D A Buchanan, C Cabral Jr, E P Gousev, V Ku, A Steegen
US Patent ..., 2008 - Google Patents, Google Patents
US Patent 7,326,610

Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification
C Cabral Jr, B B Doris, T S Kanarsky, X H Liu, H Zhu
US Patent 7,314,789, 2008 - Google Patents, Google Patents
US Patent 7,314,789

Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors
S D Allen, C Cabral Jr, K K Dezfulian, S Fang, B J Greene, R Jammy, C Lavoie, Z Luo, H Ng, C Sung, others
US Patent ..., 2008 - Google Patents, Google Patents
US Patent 7,410,852


2007

Alpha particle mitigation strategies to reduce chip soft error upsets
C Cabral Jr, KP Rodbell, MS Gordon
Journal of Applied Physics101, 014902, 2007


Electrodeposition of Cu on Ta-Based Layer
JJ Kelly, M Zheng, H Deligianni, BC Baker-O’Neal, C Cabral Jr
Journal of the Electrochemical Society154, D406, 2007

Evidence for segregation of Te in GeSbTe films: Effect on the “phase-change” stress
L Krusin-Elbaum, C Cabral Jr, KN Chen, M Copel, DW Abraham, KB Reuter, SM Rossnagel, J Bruley, VR Deline
Applied Physics Letters90, 141902, 2007


2006

STRUCTURE AND METHOD FOR METAL REPLACEMENT GATE OF HIGH PERFORMANCE DEVICE
AN Steegen, KU Victor, K H Wong, LI Ying, V Narayanan, C Cabral Jr, P Jamison
2006 - freepatentsonline.com

On the use of alloying elements for Cu interconnect applications
K Barmak, C Cabral Jr, KP Rodbell, JME Harper
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures24, 2485, 2006

A comparative study of NBTI and PBTI (charge trapping) in SiO2/HfO2 stacks with FUSI, TiN, Re gates
S Zafar, YH Kim, V Narayanan, C Cabral, V Paruchuri, B Doris, J Stathis, A Callegari, M Chudzik
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on, pp. 23--25

Structure for controlling the interface roughness of cobalt disilicide
P D Agnello, C Cabral Jr, R A Carruthers, J M K E Harper, C Lavoie, K D Peterson, R J Purtell, R A Roy, J L Jordan-Sweet, Y Y Wang, others
US Patent ..., 2006 - Google Patents, Google Patents
US Patent 7,081,676


2005

Resistivity-temperature behavior of dilute Cu (Ir) and Cu (W) alloy films
K Barmak, C Cabral Jr, AJ Kellock, JME Harper
Journal of Materials Research 20(12), 3391--3396, Pittsburgh, PA: Published for the Materials Research Society by the American Institute of Physics, c1986-, 2005


HfO 2/metal stacks: determination of energy level diagram, work functions \& their dependence on metal deposition
S Zafar, V Narayanan, A Callegari, FR McFeely, P Jamison, E Gusev, C Cabral, R Jammy
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on, pp. 44--45

Systematic study of work function engineering and scavenging effect using NiSi ...
YH Kim, C Cabral Jr, EP Gusev, R Carruthers, L Gignac, M Gribelyuk, E Cartier, S Zafar, M Copel, V Narayanan, others
IEEE International Electron Devices Meeting, 2005, pp. 4


2004

METAL SPACER GATE FOR METAL OXIDE SEMICONDUCTOR DEVICE
C CABRAL Jr, L CLEVENGER, L HSU, J SHEPARD Jr, K WONG
WO Patent WO/2004/ ..., 2004 - wipo.int
WO Patent WO/2004/027,848

Systematic study of pFET V< sub> t with Hf-based gate stacks with poly-Si and FUSI gates
E Cartier, V Narayanan, EP Gusev, P Jamison, B Linder, M Steen, KK Chan, M Frank, N Bojarczuk, M Copel, others
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on, pp. 44--45

Semiconductor structure having in-situ formed unit resistors
C Cabral Jr, L Clevenger, L L C Hsu, K K H Wong
US Patent 6,700,203, 2004 - Google Patents, Google Patents
US Patent 6,700,203

Evaluation of thermal stability for CMOS gate metal materials
C Cabral Jr, C Lavoie, AS Ozcan, RS Amos, V Narayanan, EP Gusev, JL Jordan-Sweet, JME Harper
Journal of the Electrochemical Society151, F283, 2004

ELEMENT D'ESPACEMENT METALLIQUE POUR DISPOSITIF SEMICONDUCTEUR EN OXYDE METALLIQUE
C CABRAL Jr, L CLEVENGER, L HSU, J SHEPARD, K WONG
WO Patent 2,004,027,848, 2004
WO Patent 2,004,027,848

Evolution of microstructure in Ti--Ta bilayer thin films on polycrystalline-Si and Si (001)
AS {\"O}zcan, KF Ludwig Jr, C Lavoie, SN Basu, C Coia, C Cabral Jr, KP Rodbell, JME Harper
Thin Solid Films 466(1-2), 238--249, Elsevier, 2004

Aggressively scaled (0.143 $\mu$m 2) 6T-SRAM cell for the 32 nm node and beyond
DM Fried, JM Hergenrother, AW Topol, L Chang, L Sekaric, JW Sleight, SJ McNab, J Newbury, SE Steen, G Gibson, others
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International, pp. 261--264


2003

Self-aligned silicide process for silicon sidewall source and drain contacts
C Cabral Jr, K K Chan, G M Cohen, K W Guarini, C Lavoie, P M Solomon, Y Zhang
US Patent ..., 2003 - Google Patents, Google Patents
US Patent 6,645,861

Dose loss and diffusion in BF 2  implanted silicon during rapid thermal annealing
O Dokumaci, P Ronsheim, S Hegde, C Cabral Jr
Advanced short-time thermal processing for Si-based CMOS devices: proceedings of the international symposium, pp. 105, 2003



2002

ELECTRONIC STRUCTURE HAVING IN-SITU RESISTORS
C CABRAL Jr, L CLEVENGER, L HSU, K WONG
WO Patent WO/2002/031,867, 2002 - wipo.int
WO Patent WO/2002/031,867

STRUCTURE ELECTRONIQUE POSSEDANT DES RESISTANCES IN-SITU
C CABRAL Jr, L CLEVENGER, L HSU, K WONG
WO Patent 2,031,867, 2002
WO Patent 2,031,867

Method for forming an open-bottom liner for a conductor in an electronic structure and device formed
C Cabral Jr, C K Hu, S G Malhotra, F R McFeely, S M Rossnagel, A H Simon
US Patent ..., 2002 - Google Patents, Google Patents
US Patent 6,380,075

Texture of TiSi thin films on Si (001)
AS {\"O}zcan, KF Ludwig Jr, P Rebbi, C Lavoie, C Cabral Jr, JME Harper
Journal of Applied Physics92, 5011, 2002

Method for increasing the capacitance of a trench capacitor
C Cabral Jr, K K Chan, G M Cohen, R Divakaruni, C Lavoie, F R McFeely
US Patent ..., 2002 - Google Patents, Google Patents
US Patent 6,448,131

Trends in properties of electroplated Cu with plating conditions and chemistry
J Horkans, C Cabral Jr., K P Rodbell, C Parks, MA Gribelyuk, S Malhotra, PC Andricacos
Electrochemical processing in ULSI fabricatrion III: proceedings of the International Symposium, pp. 110, 2002

Nucleation and growth kinetics of preferred C54 TiSi orientations: time-resolved x-ray diffraction measurements
AS {\"O}zcan, KF Ludwig Jr, C Lavoie, C Cabral Jr, JME Harper, RM Bradley
Journal of Applied Physics92, 5189, 2002

Metastable and equilibrium phase formation in sputter-deposited Ti/Al multilayer thin films
G Lucadamo, K Barmak, C Lavoie, C Cabral Jr, C Michaelsen
Journal of Applied Physics91, 9575, 2002

Effects of Alloying Elements on Cobalt Silicide Formation
C L C Cabral Jr, F M H J L Jordan-Sweet, JME Harper
Journal of Electronic Materials 31(6), 597--609, 万方数据资源系统, 2002

Capping layer for improved silicide formation in narrow semiconductor structures
K J Giewont, S B Brodsky, C Cabral Jr, A G Domenicucci, C M Ransom, Y Y Wang, H S Wildman, K H Wong, others
US Patent ..., 2002 - Google Patents, Google Patents
US Patent 6,388,327

Metastable and equilibrium phase formation in sputter-deposited Ti{\~O}Al multilayer thin films
G Lucadamoa, K Barmakb, C Lavoie, C Cabral Jr, C Michaelsen
JOURNAL OF APPLIED PHYSICS91, 12, 2002


2001


Thin metal barrier for electrical interconnections
C Cabral Jr, P W DeHaven, D C Edelstein, D P Klaus, J M Pollard III, C L Stanis, C E Uzoh
US Patent ..., 2001 - Google Patents, Google Patents
US Patent 6,291,885

Formation of C54 TiSi: Effects of niobium additions on the apparent activation energy
S L Zhang, C Lavoie, P Gas, C Cabral Jr, JME Harper
Journal of Applied Physics90, 6409, 2001


2000

M ECHANISMS FOR E NHANCED F ORMATION OF THE C54 P HASE OF T ITANIUM S ILICIDE U LTRA-L ARGE-S CALE I NTEGRATION C ONTACTS
JME Harper, C Cabral Jr, C Lavoie
Annual Review of Materials Science 30(1), 523--543, Annual Reviews, 2000


1999

Thin film or solder ball including a metal and an oxide, nitride, or carbide precipitate of an expandable or contractible element
C Cabral Jr, L A Clevenger, Q Z Hong
US Patent 5,945,737, 1999 - Google Patents, Google Patents
US Patent 5,945,737

Biographical sketches of authors
DE Kotecki, JD Baniecki, H Shen, RB Laibowitz, KL Saenger, JJ Lian, TM Shaw, SD Athavale, C Cabral Jr, PR Duncombe, others
IBM Journal of Research and Development 43(3), 1999

About IBM| Privacy| Terms of use| Contact
DE Kotecki, JD Baniecki, H Shen, RB Laibowitz, KL Saenger, JJ Lian, TM Shaw, SD Athavale, C Cabral Jr, PR Duncombe, others
IBM Journal of Research and Development 43(3), 367, 1999



Phase formation and resistivity in the ternary system Ti--Nb--Si
A Mouroux, M Roux, S L Zhang, C Cabral Jr, C Lavoie, J M E Harper
Journal of Applied Physics86, 2323, 1999

Mechanisms for enhanced C54--TiSi2 formation in Ti--Ta alloy films on single-crystal Si
A Quintero, M Libera, C Cabral Jr, C Lavoie, JME Harper
J. Mater. Res 14(12), 4691, 1999

Mechanisms for microstructure evolution in electroplated copper thin films near room temperature
JME Harper, C Cabral Jr, PC Andricacos, L Gignac, IC Noyan, KP Rodbell, CK Hu
Journal of applied physics86, 2516, 1999

Ultrathin dielectric films
DE Kotecki, JD Baniecki, H Shen, RB Laibowitz, KL Saenger, JJ Lian, TM Shaw, SD Athavale, C Cabral Jr, PR Duncombe, others
Journal of Research 43(3), 1999

Influence of alloying elements on the formation and stability of NiSi
C Detavernier, D Deduytsche, J Jordan-Sweet, C Cabral Jr, C Lavoie
Phys. Lett75, 1736, 1999


1998

Evaluation of Al (Nd)-alloy films for application to thin-film-transistor liquid crystal displays-Author bios
H Takatsuji, E G Colgan, C Cabral Jr, J M E Harper
IBM Journal of Research and Development 42(3/4), 1998

Interdiffusion and phase formation in Cu (Sn) alloy films
LA Clevenger, B Arcot, W Ziegler, EG Colgan, QZ Hong, C Cabral Jr, TA Gallo, JME Harper
Journal of Applied Physics83, 90, 1998

Method for controlling tensile and compressive stresses and mechanical problems in thin films on substrates
C Cabral Jr, L A Clevenger, Q Z Hong
US Patent 5,834,374, 1998 - Google Patents, Google Patents
US Patent 5,834,374

IBM Research Report RC 20593 (October 1996)
KL Saenger, A Grill, C Cabral Jr
J. Mater. Res., in press for February, 1998

Noble metal silicide formation in metal/Si structures during oxygen annealing: Implications for perovskite-based memory devices
KL Saenger, A Grill, C Cabral Jr
Journal of Materials Research 13(2), 462--468, Pittsburgh, PA: Published for the Materials Research Society by the American Institute of Physics, c1986-, 1998


1997

IN-SITU X-RAY DIFFRACTION ANALYSIS OF TiSi2 PHASE FORMATION FROM A TITANIUM-MOLYBDENUM BILAYER
C Cabral Jr, LA Clevenger, JME Harper, RA Roy, KL Saenger, GL Miles, RW Mann
Thin films--structure and morphology: symposium held December 2-6, 1996, Boston, Massachusetts, USA, pp. 295, 1997

Low temperature selective growth of silicon or silicon alloys
C Cabral Jr, K K Chan, J O Chu, J M E Harper
US Patent 5,595,600, 1997 - Google Patents, Google Patents
US Patent 5,595,600

Thin film for a multilayer semiconductor device for improving thermal stability and a method thereof
P D Agnello, C Cabral Jr, L A Clevenger, M W Copel, Q Z Hong
US Patent ..., 1997 - Google Patents, Google Patents
US Patent 5,608,266


1996

IN SITU ANALYSIS OF THE FORMATION OF THIN TISI,(< IN SUBMICRON CMOS STRUCTURES DURI1 RAPID THERMAL ANNEALING
LA ClevengerA, C Cabral Jr, RA Roy, C Lavoie, R Viswanath, J Jordan-Sweet, G Morales, KL Ludwig Jr, GB Stepheni
Silicide thin films--fabrication, properties, and application: symposium held November 27-30, 1995, Boston, Massachusetts, USA, pp. 257, 1996


DEPENDENCE OF CRYSTALLOGRAPHIC TEXTURE OF C54 TiSi2 ON THICKNESS AND LINEWIDTH IN SUBMICRON CMOS STRUCTURES
V Svilan, KP Rodbell, LA Clevenger, C Cabral Jr, RA Roy, C Lavoie, J Jordan-Sweet, JME Harper
Advanced Metallization for Future Ulsi: Symposium Held April 8-11, 1996, San Francisco, California, USA, pp. 53

Method for low temperature selective growth of silicon or silicon alloys
C Cabral Jr, K K Chan, J O Chu, J M E Harper
US Patent 5,565,031, 1996 - Google Patents, Google Patents
US Patent 5,565,031


1995

Method of metal silicide formation in integrated circuit devices
R D Bailey, C Cabral Jr, B Cunningham, H M Dalal, J M Harper, V Sardesai, H S Wildman, T O Williams
US Patent ..., 1995 - Google Patents, Google Patents
US Patent 5,401,677

STRESS EVOLUTION DURING THE FORMATION AND TRANSFORMATION OF TITANIUM SIL1CIDE
V Svilan, JME Harper, C Cabral Jr, LA Clevenger
Thin Films, 167, Materials Research Society, 1995

IN-SITU X-RAY DIFFRACTION AND RESISTIVITY ANALYSIS OF CoSi2 PHASE FORMATION WITH AND WITHOUT A TIINTERLAYER AT RAPID THERMAL ANNEALING RATES
C Cabral Jr, G B S LA CLEVENGER, S BRAUER, G MORALES, KF LUDWIG JR
Applications of synchrotron radiation techniques to materials science 2, 253, Materials Research Society, 1995

Reduction of the C54--TiSi phase transformation temperature using refractory metal ion implantation
RW Mann, GL Miles, TA Knotts, DW Rakowski, LA Clevenger, JME Harper, FM d’Heurle, C Cabral Jr
Applied Physics Letters67, 3729, 1995

Mask material for low temperature selective growth of silicon or silicon alloys
C Cabral Jr, K K Chan, J O Chu, J M E Harper
US Patent 5,427,630, 1995 - Google Patents, Google Patents
US Patent 5,427,630


1993

Compressive stress increase with repeated thermal cycling in tantalum (oxygen) thin films
C Cabral Jr, LA Clevenger, RG Schad
Thin Films: Stresses and Mechanical Properties IV: Symposium Held April 12-16, 1993, San Francisco, California, USA, pp. 57


Year Unknown

Crystallographic texture change during abnormal grain growth in Cu-Co thin films
C Cabral Jr, DP Tracy, DB Knorr
C Cabral Jr , DP Tracy, DB Knorr, 0


for papers in Volume 52
SI Abarzhi, J Ackaret, S Agarwala, D Agrawal, JP Akelbein, SF Alvarado, LC Alves, PS Andry, TA Antonakopoulos, K Antypas, others
www-tr.watson. ibm .com, 0

for papers in Volume 43
WW Abadeer, PH Abbott, LC Alves, RE Anderson, M Armacost, DS Armbrust, SD Athavale, RM Averill III, A Bagramian, JD Baniecki, others
... Buhrman, JS Burnham, C Cabral Jr , SA Campbell, PJ ..., 0

Alpha-particle-induced upsets in advanced CMOS circuits and technology-Author Bios
DF Heidel, KP Rodbell, EH Cannon, C Cabral Jr, MS Gordon, P Oldiges, HHK Tang
DF Heidel, KP Rodbell, EH Cannon, C Cabral Jr, MS ..., 0

ON THICKNESS AND LINEWIDTH IN SUBMICRON CMOS STRUCTURES
V Svilan, KP Rodbell, LA Clevenger, C Cabral Jr, RA Roy, C Lavoie, J Jordan-Sweet, JME Harper
mrs.org, 0

Evolution of Texture in TiSi Thin Films
A {\"O}zcan, K Ludwig Jr, C Lavoie, C Cabral Jr, J M E H IBM
nsls.bnl.gov, 0

Single-event-upset and alpha-particle emission rate measurement techniques-References
MS Gordon, KP Rodbell, DF Heidel, C Cabral Jr, EH Cannon, DD Reinhardt
MS Gordon, KP Rodbell, DF Heidel, C Cabral Jr, EH ..., 0

Single-event-upset and alpha-particle emission rate measurement techniques-Author Bios
MS Gordon, KP Rodbell, DF Heidel, C Cabral Jr, EH Cannon, DD Reinhardt
MS Gordon, KP Rodbell, DF Heidel, C Cabral Jr, EH ..., 0

Alpha-particle-induced upsets in advanced CMOS circuits and technology-References
DF Heidel, KP Rodbell, EH Cannon, C Cabral Jr, MS Gordon, P Oldiges, HHK Tang
DF Heidel, KP Rodbell, EH Cannon, C Cabral Jr, MS ..., 0

Study of C49-TiSi2 and 654\~{} TiSi2 formation on doped polycrystalline silicon using in sifu resistance measurements during annealing
LA Clevenger, RW Mann, RA Roy, KL Saenger, C Cabral Jr, J Piccirillo
... , RW Mann, RA Roy, KL Saenger, C Cabral Jr , J ..., 0

Kinetics of Al grain growth, Al\&u precipitation, and dissolution in blanket thin films and fine lines
EG Colgan, KP Rodbell, C Cabral Jr, JME Harper
EG Colgan, KP Rodbell, C Cabral Jr , JME Harper, 0

Applied Sciences
C Cabral Jr, C Lavoie, JME Harper, JL Jordan-Sweet
Sweet - bnl.gov, 0

dielectrics for future stacked-capacitor DRAM
DE Kotecki, JD Baniecki, H Shen, SD Athavale, C Cabral Jr, PR Duncombe
researchweb.watson. ibm .com, 0

Interfacial reaction pathways and kinetics during annealing of 111-textured Al{\~O}TiN bilayers: A synchrotron x-ray diffraction and transmission electron microscopy study
JS Chun, P Desjardins, C Lavoie, I Petrov, C Cabral Jr, JE Greenea
JS Chun, P Desjardins, C Lavoie, I Petrov, C Cabral Jr , ..., 0