Conal E. Murray  Conal E. Murray photo       

contact information

Research Staff Member
IBM T.J. Watson Research Center, Yorktown Heights, NY USA
  +1dash914dash945dash2715

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2009

Method and structure for reducing contact resistance between silicide contact and overlying metallization
C Lavoie, C E Murray, K P Rodbell
US Patent 7,491,643, 2009 - Google Patents, Google Patents
US Patent 7,491,643

Stress determination in nickel monosilicide films using x-ray diffraction
C E Murray, Z Zhang, C Lavoie
Journal of Applied Physics106, 073521, 2009

Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni 0.95 Pt 0.05/Si „100… thin films
P Adusumilli, L J Lauhon, D N Seidman, C E Murray, O Avayu, Y Rosenwaks
Applied Physics Letters94, 113103, 2009

Tomographic study of atomic-scale redistribution of platinum during the silicidation of NiPt/Si (100) thin films
P Adusumilli, L J Lauhon, D N Seidman, C E Murray, O Avayu, Y Rosenwaks
Applied Physics Letters94, 113103, 2009


A rigorous comparison of X-ray diffraction thickness measurement techniques using silicon-on-insulator thin films
AJ Ying, CE Murray, IC Noyan
Journal of Applied Crystallography 42(3), International Union of Crystallography, 2009


Three-Dimensional Atom-Probe Tomographic Studies of Nickel Monosilicide/Silicon Interfaces on a Subnanometer Scale
P Adusumilli, C E Murray, L J Lauhon, O Avayu, Y Rosenwaks, D N Seidman
2009 - 129.105.37.34

INTERCONNECT STRUCTURE AND METHOD FOR CU/ULTRA LOW K INTEGRATION
C MURRAY, C C YANG
WO Patent WO/2009/098,151, 2009 - wipo.int
WO Patent WO/2009/098,151

REDUNDANCY DESIGN WITH ELECTRO-MIGRATION IMMUNITY AND METHOD OF MANUFACTURE
L L Hsu, C E Murray, P Wang, C Yang
2009 - freepatentsonline.com



2008

Extendibility of NiPt silicide to the 22-nm node CMOS technology
Kazuya Ohuchi, Christian Lavoie, Conal E Murray, Chris P D'Emic, Isaac Lauer, Jack O Chu, Bin Yang, Paul Besser, Lynne M Gignac, John Bruley, others
Junction Technology, 2008. IWJT'08. Extended Abstracts-2008 8th International workshop on, pp. 150--153

Structure for determining thermal cycle reliability
R G Filippi, J P Gill, V J McGahay, P S McLaughlin, C E Murray, H S Rathore, T M Shaw, P C Wang, others
US Patent ..., 2008 - Google Patents, Google Patents
US Patent 7,388,224

Material and Integration Issues for Rare Earth Silicides as Gate and Diffusion Contacts in Advanced CMOS Technologies
PD Christopher, K Ohuchi, C Murray, C Lavoie, C Scerbo, R Carruthers, P R Besser, B Yang
2008 - link.aip.org

Silicides for 22nm and Beyond
P R Besser, C Lavoie, C Murray, PD Christopher, K Ohuchi
2008 - link.aip.org

Local strain distributions in silicon-on-insulator/stressor-film composites
{\"O} Kalenci, C E Murray, IC Noyan
Journal of Applied Physics104, 063503, 2008

Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures
C E Murray, KL Saenger, O Kalenci, SM Polvino, IC Noyan, B Lai, Z Cai
Journal of Applied Physics104, 013530, 2008

Structure for optimizing fill in semiconductor features deposited by electroplating
C E Murray, P M Vereecken
US Patent 7,446,040, 2008 - Google Patents, Google Patents
US Patent 7,446,040


Real-space strain mapping of SOI features using microbeam X-ray diffraction
C E Murray, SM Polvino, IC Noyan, B Lai, Z Cai
Powder Diffraction 23(2), 106--108, [Swarthmore, Pa.: JCPDS-International Centre for Diffraction Data 1986-, 2008

Mechanical behavior of stressed films on anisotropic substrates
C E Murray, KL Saenger
Journal of Applied Physics104, 103509, 2008

Building metal pillars in a chip for structure support
H Hichri, X H Liu, V J McGahay, C E Murray, J P Nayak, T M Shaw
US Patent ..., 2008 - Google Patents, Google Patents
US Patent 7,456,098

Silicides for 32nm and beyond
P Besser, C Murray, C Lavoie
2008 - electrochem.org

Effects of patterned, stressed SiN overlayers on Si solid phase epitaxy
KL Saenger, KE Fogel, JA Ott, JP Souza de, CE Murray
Applied Physics Letters92, 124103, 2008

Synchrotron microbeam x-ray radiation damage in semiconductor layers
S M Polvino, C E Murray, {\"O} Kalenci, IC Noyan, B Lai, Z Cai
Applied Physics Letters92, 224105, 2008

Backscattered Electron Imaging in the Scanning Electron Microscope: the Use of Either:(a) High Incident Energy or (b) an Array Detector
LM Gignac, OC Wells, CK Hu, J Bruley, CE Murray, A Frye
Microscopy and Microanalysis 14(S2), 120--121, Cambridge Univ Press, 2008


Stress gradients induced in Cu films by capping layers
C E Murray, P R Besser, C Witt, J L Jordan-Sweet
Applied Physics Letters93, 221901, 2008

New simulation methodology for effects of radiation in semiconductor chip structures
HHK Tang, CE Murray, G Fiorenza, KP Rodbell, MS Gordon, DF Heidel
IBM Journal of Research and Development 52(3), 245--253, IBM Corp., 2008


2007

Ni-Pt silicide formation through Ti mediating layers
P B C L A Ozcan, C M J S K Wong, M G Y Y W Christopher, P J Jordan-Sweet
Microelectronic Engineering 84(11), 万方数据资源系统, 2007

Reprogrammable electrical fuse
L C Hsu, C E Murray, C Narayan, C Yang
US Patent App. 11/928,258, 2007 - Google Patents, Google Patents
US Patent App. 11/928,258


Ni--Pt silicide formation through Ti mediating layers
P Besser, C Lavoie, A Ozcan, C Murray, J Strane, K Wong, M Gribelyuk, Y Y Wang, C Parks, J Jordan-Sweet
Microelectronic Engineering 84(11), 2511--2516, Elsevier, 2007


Submicron mapping of strained silicon-on-insulator features induced
C E Murray, M Sankarapandian, SM Polvino, IC Noyan, B Lai, Z Cai
Applied Physics Letters90, 171919, 2007


Importance of BEOL Modeling in Single Event Effect Analysis
HHK Tang, CE Murray, G Fiorenza, KP Rodbell, MS Gordon
IEEE Transactions on Nuclear Science 54(6 Part 1), 2162--2167, 2007

Low-energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells
K P Rodbell, D F Heidel, H H K Tang, M S Gordon, P Oldiges, C E Murray
IEEE Transactions on Nuclear Science 54(6 Part 1), 2474--2479, 2007


2006

Method and structure for determining thermal cycle reliability
R G Filippi, J P Gill, V J McGahay, P S McLaughlin, C E Murray, H S Rathore, T M Shaw, P C Wang
US Patent App. 11/ ..., 2006 - Google Patents, Google Patents
US Patent App. 11/502,196

Deflection analysis system and method for circuit design
M S Angyal, G Fiorenza, H Hichri, A Lu, D C McHerron, C E Murray
US Patent App. 11/ ..., 2006 - Google Patents, Google Patents
US Patent App. 11/336,524

Systematic Characterization of Pseudomorphic (110) Intrinsic SiGe Epitaxial Films for Hybrid Orientation Technology With Embedded SiGe Source/Drain
Q Ouyang, A Madan, N Klymko, J Li, R Murphy, H Wildman, R Davis, C Murray, J Holt, S Panda, others
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, pp. 13, 2006


Thermal stress evolution in embedded Cu/low-k dielectric composite features
C E Murray, C C Goldsmith, T M Shaw, J P Doyle, IC Noyan
Applied Physics Letters89, 011913, 2006


Effects of BEOL stack on thermal mechanical stress of Cu lines
S H Rhee, C E Murray, P R Besser
Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects Proceedings of Symposium F held at the 2006 MRS Spring Meeting, pp. 317--324


2005

Effects of dielectric roughness on texture of both PVD seed layers and EP copper
K J Kozaczek, CE Murray, KP Rodbell
Diffusion and defect data. Solid state data. Part B, Solid state phenomena105, 391--396, Scitec, 2005

Plenary Lecture-Mechanics of End Effects in Thin Film and Substrate Stress Distributions
CE Murray, IC Noyan
Materials Science Forum, pp. 13--18, 2005

Spatially transient stress effects in thin films by X-ray diffraction
CE Murray, CC Goldsmith, IC Noyan
Powder Diffraction20, 112, 2005

Heat dissipation for heat generating element of semiconductor device and related method
A K Chinthakindi, L A Clevenger, T C Lee, G Matusiewicz, C E Murray, C C Yang
US Patent App. 10/ ..., 2005 - Google Patents, Google Patents
US Patent App. 10/907,873

Eliminating metal-rich silicides using an amorphous Ni alloy silicide structure
C Detavernier, S Gaudet, C Lavoie, C E Murray
US Patent App. 11/ ..., 2005 - Google Patents, Google Patents
US Patent App. 11/173,038

METHOD OF ROOM TEMPERATURE GROWTH OF SIOx ON SILICIDE AS AN ETCH STOP LAYER FOR METAL CONTACT OPEN OF SEMICONDUCTOR DEVICES
Y Y Wang, C Lavoie, K E Mello, C E Murray, M W Oonk
US Patent App. 11/ ..., 2005 - Google Patents, Google Patents
US Patent App. 11/160,699

Mechanics of End Effects in Thin Film and Substrate Stress Distributions
CE Murray, IC Noyan
Materials Science Forum, pp. 13--18, 2005

Stacked via-stud with improved reliability in copper metallurgy
B N Agarwala, C A Barile, H M Dalal, B H Engel, M Lane, E Levine, X H Liu, V McGahay, J F McGrath, C E Murray, others
US Patent App. 11/ ..., 2005 - Google Patents, Google Patents
US Patent App. 11/230,841

High-resolution strain mapping in heteroepitaxial thin-film features
CE Murray, H F Yan, IC Noyan, Z Cai, B Lai
Journal of Applied Physics98, 013504, 2005

Thin-film transistors based on spin-coated chalcogenide semiconductor channels
D B Mitzi, M Copel, C E Murray, L L Kosbar, A Afzali
Thin Film Transistor Technologies (TFTT VII), 189, The Electrochemical Society, 2005


2004

Top-down topography of deeply etched silicon in the scanning electron microscope
O C Wells, C E Murray, J L Rullan, L M Gignac
Review of Scientific Instruments75, 2524, 2004

Apparatus and method for flattening a warped substrate
M F Fayaz, S K Kaldor, C E Murray, I C Noyan, A L Petrosky
US Patent App. 10/ ..., 2004 - Google Patents, Google Patents
US Patent App. 10/929,179


Probing Strain Fields About Thin Film Structures Using X-ray Microdiffraction
CE Murray, IC Noyan, PM Mooney, B Lai, Z Cai
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, pp. 289--294, 2004

Strain effects in thin film/Si substrates revealed by X-ray microdiffraction
CE Murray, IC Noyan, B Lai, Z Cai
Powder Diffraction19, 56, 2004

Elastic strain relaxation in free-standing SiGe/Si structures
PM Mooney, GM Cohen, JO Chu, CE Murray
Applied Physics Letters84, 1093, 2004

Finite size effects in stress analysis of interconnect structures
IC Noyan, C E Murray, J S Chey, C C Goldsmith
Applied Physics Letters85, 724, 2004

Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
RG Filippi, JF McGrath, TM Shaw, CE Murray, HS Rathore, PS McLaughlin, V McGahay, L Nicholson, P C Wang, JR Lloyd, others
2004 IEEE International Reliability Physics Symposium Proceedings, 2004, pp. 61--67

High-mobility ultrathin semiconducting films prepared by spin coating
DB Mitzi, LL Kosbar, CE Murray, M Copel, A Afzali
Nature 428(6980), 299--303, Nature Publishing Group, 2004


2003


Mapping of strain fields about thin film structures using x-ray microdiffraction
CE Murray, IC Noyan, PM Mooney, B Lai, Z Cai
Applied Physics Letters83, 4163, 2003

Liner materials for direct electrodeposition of Cu
MW Lane, CE Murray, FR McFeely, PM Vereecken, R Rosenberg
Applied Physics Letters83, 2330, 2003


2002

Finite-size effects in thin-film composites
C E Murray, IC Noyan
Philosophical Magazine A 82(16), 3087--3117, Taylor and Francis Ltd, 2002

Process of forming copper structures
M Lane, FR McFeely, C Murray, R Rosenberg
US Patent App. 10/ ..., 2002 - Google Patents, Google Patents
US Patent App. 10/279,057

Barrier material for copper structures
M Lane, FR McFeely, C Murray, R Rosenberg
US Patent App. 10/ ..., 2002 - Google Patents, Google Patents
US Patent App. 10/132,173

A COMPARISON OF GRAIN SIZE MEASUREMENTS IN AL-CU THIN FILMS: IMAGING VERSES DIFFRACTION TECHNIQUES
L Gignac, CE Murray, KP Rodbell, M Gribelyuk
Microscopy and Microanalysis 8(S02), 672--673, Cambridge Univ Press, 2002


2001

Texture evolution in Al (Cu) interconnect materials
CE Murray, KP Rodbell
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, pp. 6--6, 2001

Texture inheritance in Al (Cu) interconnect materials
CE Murray, KP Rodbell
Journal of Applied Physics89, 2337, 2001


2000

Texture evolution in aluminum-copper thin films.
C E Murray
Ph.D. Thesis, 2000


1999

A modified Voigt method for calculation of the elastic constants of ensembles selected by diffraction methods
C E Murray, IC Noyan
Philosophical Magazine A 79(2), 371--389, Taylor and Francis Ltd, 1999


1998

In situ growth of highly oriented Pb (ZrTi) O thin films by low-temperature metal--organic chemical vapor deposition
G R Bai, I F Tsu, A Wang, CM Foster, CE Murray, VP Dravid
Applied Physics Letters72, 1572, 1998



1995

In-situ study of dynamic structural rearrangements during stress relaxation
AD Westwood, CE Murray, IC Noyan
Advances in X Ray Analysis38, 243--254, New York: Plenum Press, 1960-c1997., 1995


1994

Analysis of three-dimensional, inhomogeneous composite bodies using the boundary integral method
C E Murray
Masters Thesis, 1994


Year Unknown






Local strain distributions in silicon-on-insulator/stressor-film composites

Journal of Applied Physics, 2009 - ieeexplore.ieee.org


Synchrotron microbeam x-ray radiation damage in semiconductor layers

Applied Physics ..., 2009 - ieeexplore.ieee.org

Finite-size effects in thin-film composites

Philosophical Magazine A, 2002 - Taylor & Francis


Texture evolution in Al (Cu) interconnect materials

MATERIALS RESEARCH SOCIETY ..., 2001 - mrs.org


In situ evolution of stress gradients in Cu films induced by capping layers

Applied Physics ..., 2010 - ieeexplore.ieee.org

A modified Voigt method for calculation of the elastic constants of ensembles selected by diffraction methods

Philosophical Magazine A, 1999 - Taylor & Francis, 0



Mechanical behavior of stressed films on anisotropic substrates

Journal of Applied Physics, 2009 - ieeexplore.ieee.org



Ni-Pt silicide formation through Ti mediating layers

Microelectronic ..., 2007 - Elsevier


Silicides for 32nm and beyond

2008 - electrochem.org



The relationship between the golden section φ and the elastic constants of ensembles selected by diffraction methods

Philosophical Magazine A, 1996 - Taylor & Francis, 0


Stress determination in nickel monosilicide films using x-ray diffraction

Journal of Applied Physics, 2009 - ieeexplore.ieee.org




High mobility solution-deposited chalcogenide films for flexible applications

... , 2005.(VLSI-TSA- ..., 2005 - ieeexplore.ieee.org

Stress gradients induced in Cu films by capping layers

Applied Physics ..., 2009 - ieeexplore.ieee.org



Extendibility of NiPt silicide to the 22-nm node CMOS technology

... , 2008. IWJT'08. ..., 2008 - ieeexplore.ieee.org


High-resolution strain mapping in heteroepitaxial thin-film features

Journal of Applied Physics, 2005 - link.aip.org

Effects of BEOL stack on thermal mechanical stress of Cu lines

... , Technology and Reliability of Low-k ..., 2006 - mrs.org




Integration of Direct Plating of Cu Onto a CVD Ru Liner

... Conference 2004(AMC ..., 2005 - csa.com


Mechanics of edge effects in anisotropic thin film/substrate systems

Journal of Applied Physics, 2009 - ieeexplore.ieee.org

Texture inheritance in Al (Cu) interconnect materials

Journal of Applied Physics, 2001 - link.aip.org

Importance of BEOL modeling in single event effect analysis

Nuclear Science, IEEE ... - ieeexplore.ieee.org, 0

Finite size effects in stress analysis of interconnect structures

Applied Physics Letters, 2004 - link.aip.org




MRS Symposium II: Probing Mechanics at Nanoscale Dimensions
A Minor, C Murray, N Tamura, L Friedman
mrs.org, 0

New simulation methodology for effects of radiation in semiconductor chip structures-References
HHK Tang, CE Murray, G Fiorenza, KP Rodbell, MS Gordon, DF Heidel
HHK Tang, CE Murray, G Fiorenza, KP Rodbell, MS ..., 0

New simulation methodology for effects of radiation in semiconductor chip structures-Author Bios
HHK Tang, CE Murray, G Fiorenza, KP Rodbell, MS Gordon, DF Heidel
HHK Tang, CE Murray, G Fiorenza, KP Rodbell, MS ..., 0