Dennis M Newns  Dennis M Newns photo       

contact information

Research
Thomas J. Watson Research Center, Yorktown Heights, NY USA
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2016

Low voltage transistor and logic devices with multiple, stacked piezoelectronic layers
Elmegren et al.
Patent 9590167

Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence
Elmegreen et al.
Patent 9251884


2015

Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene nanomesh.
Abou-Kandil et al.
Patent 8900538

Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence
Elmegreen et al.
Patent 9679645

Piezoelectronic memory
Elmegreen et al.
Patent 9058868


2012

Hardware analog-digital neural networks
Elmegreen et al.
Patent 8275727

Piezo-effect transistor device and applications
Elmegreen et al.
Patent 8159854


2010

Method and structure for ultra-high density, high data rate ferroelectric storage disk technology using stabilization by a surface conducting layer
Newns
Patent 7754353

Piezo-driven non-volatile memory cell with hysteretic resistance
Elmegreen et al.
Patent 7,848,135


2003

Ferroelectric drive for data storage
Newns
Patent 6515957


2002

Quantum computing with d-wave superconductors
Newns
Patent 6495854


2001

Ultrafast nanoscale field effect transistor
Donath et al.
Patent 8275727