Eduard A. (Ed) Cartier  Eduard A. (Ed) Cartier photo       

contact information

Research Staff Member
Thomas J. Watson Research Center, Yorktown Heights, NY USA
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2009

Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks
A Kerber, E A Cartier
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 9(2), 147, 2009


Interaction of La2O3 capping layers with HfO2 gate dielectrics
M. Copel, S. Guha, N. Bojarczuk, E. Cartier, V. Narayanan, and V. Paruchuri
Appl. Phys. Lett.95, 212903, 2009

Interfacial layer optimization of high-k/metal gate stacks for low temperature processing
B P Linder, V Narayanan, E A Cartier
Microelectronic Engineering, Elsevier, 2009

The evolution of optical and electrical properties of low-k dielectrics under bias stress
JM Atkin, E Cartier, TM Shaw, JR Lloyd, RB Laibowitz, TF Heinz
Microelectronic Engineering, Elsevier, 2009

CIRCUIT STRUCTURE WITH METAL GATE AND HIGH-K DIELECTRIC
E CARTIER, V NARAYANAN, V PARUCHURI, B LINDER, B DORIS
WO Patent WO/2009/ ..., 2009 - wipo.int
WO Patent WO/2009/019,187

Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes
C Choi, T Ando, E Cartier, M M Frank, R Iijima, V Narayanan
Microelectronic Engineering 86(7-9), 1737--1739, Elsevier, 2009

DEEP TRENCH (DT) METAL-INSULATOR-METAL (MIM) CAPACITOR
T W Dyer, E A Cartier, M P Chudzik, N Moumen
2009 - freepatentsonline.com



2008


Gate length scaling and high drive currents enabled for high performance SOI technology using high-$\kappa$/metal gate
K Henson, H Bu, MH Na, Y Liang, U Kwon, S Krishnan, J Schaeffer, R Jha, .., M Hargrove, D Guo, others
IEEE International Electron Devices Meeting, 2008, pp. 1--4

Threshold Adjustment for High-K Gate Dielectric CMOS
B B Doris, E A Cartier, V Narayanan, V Paruchuri
2008 - freepatentsonline.com
WO Patent WO/2008/132,026

CMOS Circuits with High-K Gate Dielectric
B B Doris, C Dewan Adams, E A Cartier, V Narayanan
2008 - freepatentsonline.com
WO Patent WO/2008/135,335

CMOS TRANSISTORS WITH DIFFERENTIAL OXYGEN CONTENT HIGH-K DIELECTRICS
H Bu, E A Cartier, B B Doris, Y Kim, B Linder, V Narayanan, V K Paruchuri, M L Steen
2008 - freepatentsonline.com

Charge trapping at the low-k dielectric-silicon interface probed by the conductance and capacitance techniques
JM Atkin, E Cartier, TM Shaw, RB Laibowitz, TF Heinz
Applied Physics Letters93, 122902, 2008

Photocurrent spectroscopy of low-k dielectric materials: Barrier heights and trap densities
JM Atkin, D Song, TM Shaw, E Cartier, RB Laibowitz, TF Heinz
Journal of Applied Physics103, 094104, 2008


2007

DIELECTRIC SPACER REMOVAL
E A Cartier, R Jha, S Kanakasabapathy, X Li, R T Mo, V Narayanan, V Paruchuri, M T Robson, K T Schonenberg, M L Steen, others
US Patent App. 11/ ..., 2007 - Google Patents, Google Patents
US Patent App. 11/852,906

High Performance Metal Gate CMOS with High-K Gate Dielectric
B B Doris, E A Cartier, B P Linder, V Narayanan, V Paruchuri, M T Robson, M L Steen, Y Zhang
US Patent App. 11/ ..., 2007 - Google Patents, Google Patents
US Patent App. 11/835,320

EXTREMELY-THIN SILICON-ON-INSULATOR TRANSISTOR WITH RAISED SOURCE/DRAIN
E A Cartier, S J Koester, K Maitra, A Majumdar, R T Mo
US Patent App. 11/ ..., 2007 - Google Patents, Google Patents
US Patent App. 11/837,057


Dual layer SrTiO3/HfO2 gate dielectric for aggressively scaled band-edge nMOS devices
C Choi, E Cartier, YY Wang, V Narayanan, M Khare
Microelectronic Engineering 84(9-10), 2217--2221, Elsevier, 2007



Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks
V Narayanan, VK Paruchuri, E Cartier, BP Linder, N Bojarczuk, S Guha, SL Brown, Y Wang, M Copel, TC Chen
Microelectronic engineering 84(9-10), 1853--1856, Elsevier, 2007

High-performance high-k/metal gates for 45 nm CMOS and beyond with gate ...
M Chudzik, B Doris, R Mo, J Sleight, E Cartier, C Dewan, D Park, H Bu, W Natzle, W Yan, others
Proc VLSI Tech194, 2007


2006

Semiconductor device structures (gate stacks) with charge compositions
D A Buchanan, E A Cartier, K K Chan, L Chang, PD Christopher, M M Frank, E Gusev, J P Han, R Jammy, V K Paruchuri, others
US Patent App. 11/ ..., 2006 - Google Patents, Google Patents
US Patent App. 11/477,707

Fundamental understanding and optimization of PBTI in nFETs with SiO2/HfO2 gate stack
E Cartier, BP Linder, V Narayanan, VK Paruchuri
Electron Devices Meeting, 2006. IEDM'06. International, pp. 1--4

Poly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETs
KL Lee, MM Frank, V Paruchuri, E Cartier, B Linder, N Bojarczuk, X Wang, J Rubino, M Steen, P Kozlowski, others
VLSI Technology, 2006, pp. 160--161

Band-edge high-performance high-k/metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
V Narayanan, VK Paruchuri, NA Bojarczuk, BP Linder, B Doris, YH Kim, S Zafar, J Stathis, S Brown, J Arnold, others
VLSI Technology, 2006, pp. 178--179

Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO2/metal stacks
V Narayanan, K Maitra, BP Linder, VK Paruchuri, EP Gusev, P Jamison, MM Frank, ML Steen, D La Tulipe, J Arnold, others
Electron Device Letters, IEEE 27(7), 591--594, IEEE, 2006


2005

MISE EN OEUVRE SELECTIVE DE COUCHES POUR OBTENIR UNE COMMANDE DE TENSION SEUIL LORS DE LA FABRICATION DE DISPOSITIFS CMOS A DIELECTRIQUES AK ELEVE
N A BOJARCZUK Jr, C CABRAL Jr, E A CARTIER, M W COPEL, M M FRANK, E P GOUSEV, S GUHA, R JAMMY, V NARAYANAN, V K PARUCHURI, others
WO Patent 2,005,122,286, 2005
WO Patent 2,005,122,286

Low threshold voltage semiconductor device with dual threshold voltage control means
E A Cartier, M W Copel, M M Frank, E P Gousev, P C Jamison, R Jammy, B P Linder, V Narayanan
US Patent App. 11/ ..., 2005 - Google Patents, Google Patents
US Patent App. 11/259,644

Potential imaging of Si/ HfO/polycrystalline silicon gate stacks: Evidence for an oxide dipole
R Ludeke, V Narayanan, EP Gusev, E Cartier, SJ Chey
Applied Physics Letters86, 122901, 2005

Oxygen defects and Fermi level location in metal-hafnium oxide-silicon structures
D Lim, R Haight, M Copel, E Cartier
Applied Physics Letters87, 072902, 2005

Dielectric stack without interfacial layer
N A Bojarczuk Jr, E A Cartier, M W Copel, S Guha
US Patent ..., 2005 - Google Patents, Google Patents
US Patent 6,861,728

Poly-Si/high-k gate stacks with near-ideal threshold voltage and mobility
MM Frank, VK Paruchuri, V Narayanan, N Bojarczuk, B Linder, S Zafar, EA Cartier, EP Gusev, PC Jamison, KL Lee, others
VLSI Technology, 2005.(VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on, pp. 97--98

Systematic study of work function engineering and scavenging effect using NiSi ...
YH Kim, C Cabral Jr, EP Gusev, R Carruthers, L Gignac, M Gribelyuk, E Cartier, S Zafar, M Copel, V Narayanan, others
IEEE International Electron Devices Meeting, 2005, pp. 4

Role of oxygen vacancies in V FB/V t stability of pFET metals on HfO 2
E Cartier, FR McFeely, V Narayanan, P Jamison, BP Linder, M Copel, VK Paruchuri, VS Basker, R Haight, D Lim, others
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on, pp. 230--231

Threshold voltage instabilities in high-/spl kappa/gate dielectric stacks
S Zafar, A Kumar, E Gusev, E Cartier
IEEE Transactions on Device and Materials Reliability 5(1), 45--64, 2005


2004

APPLIED PHYSICS REVIEWS—FOCUSED REVIEW
T Kebe, A Carl, H T Miyazaki, H Miyazaki, Y Jimba, Y Kurokawa, N Shinya, K Miyano, D Leuenberger, R Ferrini, others
J. Appl. Phys 95(3), 2004

Threshold and flatband voltage stabilization layer for field effect transistors with high permittivity gate oxides
N A Bojarczuk, E A Cartier, M M Frank, E Gousev, S Guha, V Narayanan
US Patent App. 10/ ..., 2004 - Google Patents, Google Patents
US Patent App. 10/845,719

Semiconductor-dielectric-semiconductor device structure fabricated by wafer bonding
M M Frank, A Reznicek, E P Gousev, E A Cartier
US Patent App. 10/ ..., 2004 - Google Patents, Google Patents
US Patent App. 10/917,055

Systematic study of pFET V< sub> t with Hf-based gate stacks with poly-Si and FUSI gates
E Cartier, V Narayanan, EP Gusev, P Jamison, B Linder, M Steen, KK Chan, M Frank, N Bojarczuk, M Copel, others
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on, pp. 44--45

Surface potential and morphology issues of annealed (HfO)(SiO) gate oxides
R Ludeke, P Lysaght, E Cartier, E Gusev, M Chudzik, B Foran, G Bersuker
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures22, 2113, 2004

Transport and exchange of hydrogen isotopes in silicon-device-related stacks
C Krug, EP Gusev, EA Cartier, TH Zabel
Journal of Applied Physics95, 887, 2004

Charge Trapping in SiO2/HfO2 Dual layer Gate stacks
E Cartier, A Kerber, L Pantisano
IBM, Electrical Engineering, 2004

Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID--VG
A Kerber, E Cartier, L Pantisano, R Degraeve, G Groeseneken, HE Maes, U Schwalke
Microelectronic Engineering 72(1-4), 267--272, Elsevier, 2004

Dual work function metal gate CMOS using CVD metal electrodes
V Narayanan, A Callegari, FR McFeely, K Nakamura, P Jamison, S Zafar, E Cartier, A Steegen, V Ku, P Nguyen, others
VLSI Technology, 2004, pp. 192--193


2003

ALD HfO\~{} 2 Surface Preparation Study
A Delabie, M Caymax, JW Maes, P Bajolet, B Brijs, E Cartier, T Conard, S De Gendt, O Richard, W Vandervorst, others
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, pp. 179--184, 2003


Issues, achievements and challenges towards integration of high-k dielectrics
M Caymax, S De Gendt, W Vandervorst, M Heyns, H Bender, R Carter, T Conard, R Degraeve, G Groeseneken, S Kubicek, others
Frontiers in electronics: future chips: proceedings of the 2002 Workshop on Frontiers in Electronics (WOFE-02), St Croix, Virgin Islands, USA, 6-11 January 2002, pp. 89, 2003

Engineered high dielectric constant oxide and oxynitride heterostructure gate dielectrics by an atomic beam deposition technique
N A Bojarczuk Jr, E A Cartier, S Guha
US Patent 6,541,079, 2003 - Google Patents, Google Patents
US Patent 6,541,079

Interfacial Reactions of Metal Oxide Stack Dielectrics Studied with Medium Energy Ion Scattering
M Copel, MC Reuter, E Cartier, A Callegari, S Guha, EP Gousev, P Jamison, V Narayanan, D Neumayer
APS March Meeting Abstracts, pp. 6003, 2003

Process for passivating the semiconductor-dielectric interface of a MOS device and MOS device formed thereby
P M Solomon, D A Buchanan, E A Cartier, K W Guarini, F R McFeely, H Shang, J J Yourkas
US Patent App. 10/ ..., 2003 - Google Patents, Google Patents
US Patent App. 10/249,184

High-dielectric constant insulators for feol capacitors
E P Gousev, H F Okorn-Schmidt, A W Ballantine, D A Buchanan, E A Cartier, D D Coolbaugh
US Patent App. 10/ ..., 2003 - Google Patents, Google Patents
US Patent App. 10/688,508

Direct measurement of the inversion charge in MOSFETs: application to mobility extraction in alternative gate dielectrics
A Kerber, E Cartier, LA Ragnarsson, M Rosmeulen, L Pantisano, R Degraeve, Y Kim, G Groeseneken, I T AG, B Leuven
VLSI Technology, 2003, pp. 159--160

Effect of bulk trap density on HfO 2 reliability and yield
R Degraeve, A Kerber, P Roussell, E Cartier, T Kauerauf, L Pantisano, G Groeseneken
IEEE International Electron Devices Meeting, 2003, pp. 38--5

On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
J Westlinder, T Schram, L Pantisano, E Cartier, A Kerber, GS Lujan, J Olsson, G Groeseneken
IEEE Electron Device Letters 24(9), 550--552, 2003

Passivation and interface state density of SiO/HfO-based/polycrystalline-Si gate stacks
RJ Carter, E Cartier, A Kerber, L Pantisano, T Schram, S De Gendt, M Heyns
Applied Physics Letters83, 533, 2003

Origin of the threshold voltage instability in SiO (2)/HfO (2) dual layer gate dielectrics
A Kerber, E Cartier, L Pantisano, R Degraeve, T Kauerauf, Y Kim, A Hou, G Groeseneken, HE Maes, U Schwalke
IEEE Electron Device Letters 24(2), 87--89, Institute of Electrical and Electronics Engineers, Inc, 445 Hoes Ln, Piscataway, NJ, 08854-1331, USA,, 2003

Inversion channel mobility in high-$\kappa$ high performance MOSFETs
Z Ren, MV Fischetti, EP Gusev, EA Cartier, M Chudzik, M Div, I B M S Res, D Center, NY Hopewell Junction
IEEE International Electron Devices Meeting, 2003, pp. 33--2


2002

Deuterium reservoirs and ingress paths
J Burnham, E A Cartier, T G Ference, S W Mittl, A K Stamper
US Patent App. 10/ ..., 2002 - Google Patents, Google Patents
US Patent App. 10/277,835


Method for etching chemically inert metal oxides
D A Buchanan, E A Cartier, E Gousev, H Okorn-Schmidt, K L Saenger
US Patent App. 10/ ..., 2002 - Google Patents, Google Patents
US Patent App. 10/170,914


Method for forming dielectric stack without interfacial layer
B A Nestor Jr, E A Cartier, M W Copel, S Guha
2002 - freepatentsonline.com, Google Patents
US Patent App. 10/326,635

Measurement of barrier heights in high permittivity gate dielectric films
S Zafar, E Cartier, EP Gusev
Applied Physics Letters80, 2749, 2002

Reactive sputtering method for forming metal-silicon layer
A C Callegari, E A Cartier, M A Gribelyuk, H F Okorn-Schmidt, T H Zabel
US Patent ..., 2002 - Google Patents, Google Patents
US Patent 6,413,386

Interfacial oxidation process for high-k gate dielectric process integration
A W Ballantine, D A Buchanan, E A Cartier, K K Chan, M W Copel, PD Christopher, E P Gousev, F R McFeely, J S Newbury, H F Okorn-Schmidt, others
US Patent ..., 2002 - Google Patents, Google Patents
US Patent 6,444,592

Low Weibull slope of breakdown distributions in high-k layers
T Kauerauf, R Degraeve, E Cartier, C Soens, G Groeseneken, L IMEC
IEEE Electron Device Letters 23(4), 215--217, 2002

Characterization of silicate/Si (001) interfaces
M Copel, E Cartier, V Narayanan, MC Reuter, S Guha, N Bojarczuk
Applied physics letters 81(22), 4227--4229, AIP Publishing, 2002


2001

Defective trafficking and function of KATP channels caused by a sulfonylurea receptor 1 mutation associated with persistent hyperinsulinemic hypoglycemia of infancy
E A Cartier, L R Conti, C A Vandenberg, S L Shyng
Proceedings of the National Academy of Sciences of the United States of America 98(5), 2882, National Acad Sciences, 2001

Interface studies of tungsten gate metal--oxide--silicon capacitors
H Shang, M H White, K W Guarini, P Solomon, E Cartier, F R McFeely, J J Yurkas, W C Lee
Applied Physics Letters78, 3139, 2001

Erratum:“Robustness of ultrathin aluminum oxide dielectrics on Si (001)”[Appl. Phys. Lett.[bold 78], 2670 (2001)]
M Copel, E Cartier, EP Gusev, S Guha, N Bojarczuk, M Poppeller
Applied Physics Letters78, 4199, 2001

Electrical characterization of Al 2 O 3 n-channel MOSFETs with aluminum gates
L A Ragnarsson, S Guha, NA Bojarczuk, E Cartier, MV Fischetti, K Rim, J Karasinski
IEEE Electron Device Letters 22(10), 490--492, 2001

Apparatus and method for non-contact stress evaluation of wafer gate dielectric reliability
W W Abadeer, E A Cartier, J H Stathis
US Patent 6,326,732, 2001 - Google Patents, Google Patents
US Patent 6,326,732

BSTO Thin Films from 100 to 2.5 nm on Pt and Si Substrates
RB Laibowiz, EA Cartier, TM Shaw, KL Saenger, JD Baniecki, J Lian, Y Limb
APS Meeting Abstracts, pp. 11010, 2001

Hot carrier lifetime and dielectric breakdown in MOSFETs processedwith deuterium
WF Clark, E Cartier, EY Wu, IBM Microelectron, E Junction
Plasma-and Process-Induced Damage, 2001 6th International Symposium on, pp. 80--85

MOS device having a passivated semiconductor-dielectric interface
P M Solomon, D A Buchanan, E A Cartier, K W Guarini, F R McFeely, H Shang, J J Yourkas
US Patent App. 09/ ..., 2001 - Google Patents, Google Patents
US Patent App. 09/760,621

Imaging of trapped charge in SiO and at the SiO--Si interface
R Ludeke, E Cartier
Applied Physics Letters78, 3998, 2001

Formation of a stratified lanthanum silicate dielectric by reaction with Si (001)
M Copel, E Cartier, FM Ross
Applied Physics Letters 78(11), 1607--1609, AIP Publishing, 2001



Hot carrier lifetime and dielectric breakdown in MOSFETs processed with deuterium
WF Clark, E Cartier, EY Wu
International Symposium on Plasma Process-Induced Damage: proceedings, pp. 80, 2001

Imaging of oxide and interface charges in SiO2--Si
R Ludeke, E Cartier
Microelectronic Engineering 59(1-4), 259--263, Elsevier, 2001

Web internet screen customizing system
E E Kelley, C E Cartier, N J Dauerer, J U Knickerbocker
US Patent ..., 2001 - Google Patents, Google Patents
US Patent 6,209,007

Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
A Callegari, E Cartier, M Gribelyuk, HF Okorn-Schmidt, T Zabel
Journal of Applied Physics90, 6466, 2001

Robustness of ultrathin aluminum oxide dielectrics on Si (001)
M Copel, E Cartier, EP Gusev, S Guha, N Bojarczuk, M Poppeller
Applied Physics Letters78, 2670, 2001

High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition
S Guha, E Cartier, NA Bojarczuk, J Bruley, L Gignac, J Karasinski
Journal of Applied Physics90, 512, 2001


Ultrathin high-K gate stacks for advanced CMOS devices
EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, A Callegari, S Zafar, PC Jamison, DA Neumayer, others
INTERNATIONAL ELECTRON DEVICES MEETING, pp. 451--454, 2001

Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
EP Gusev, E Cartier, DA Buchanan, M Gribelyuk, M Copel, H Okorn-Schmidt, C D’emic
Microelectronic Engineering 59(1), 341--349, Elsevier, 2001


2000

Local transport and trapping issues in AlO gate oxide structures
R Ludeke, MT Cuberes, E Cartier
Applied Physics Letters76, 2886, 2000

Notification system for access to and printing of proprietary network services
E E Kelley, C E Cartier, N J Dauerer, J U Knickerbocker
US Patent ..., 2000 - Google Patents, Google Patents
US Patent 6,061,669

Local transport and trapping issues in Al 2 O 3 gate oxide structures
R Ludeke, MT Cuberes, E Cartier
Applied Physics Letters 76(20), 2886--2888, 2000

Hot carrier transport effects in AlO-based metal-oxide-semiconductor structures
R Ludeke, MT Cuberes, E Cartier
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures18, 2153, 2000

Local transport and trapping issues in Al [sub 2] O [sub 3] gate oxide structures
R Ludeke, MT Cuberes, E Cartier
Applied Physics Letters 76(20), 2886, 2000

High-resolution depth profiling in ultrathin Al [sub 2] O [sub 3] films on Si
EP Gusev, M Copel, E Cartier, IJR Baumvol, C Krug, MA Gribelyuk
Applied Physics Letters 76(2), 176, 2000

Breakdown measurements of ultra-thin SiO 2 at low voltage
JH Stathis, A Vayshenker, PR Varekamp, EY Wu, C Montrose, J McKenna, DJ DiMaria, L K Han, E Cartier, RA Wachnik, others
VLSI Technology, 2000, pp. 94--95

80 nm polysilicon gated n-FETs with ultra-thinAl 2 O 3 gate dielectric for ULSI applications
DA Buchanan, EP Gusev, E Cartier, H Okorn-Schmidt, K Rim, MA Gribelyuk, A Mocuta, A Ajmera, M Copel, S Guha, others
Electron Devices Meeting, 2000, pp. 223--226

High-resolution depth profiling in ultrathin AlO films on Si
EP Gusev, M Copel, E Cartier, IJR Baumvol, C Krug, MA Gribelyuk
Applied Physics Letters76, 176, 2000

Atomic beam deposition of lanthanum-and yttrium-based oxide thin films for gate dielectrics
S Guha, E Cartier, MA Gribelyuk, NA Bojarczuk, MC Copel
Applied Physics Letters77, 2710, 2000


1999

Determination of the energy-dependent conduction band mass in SiO
R Ludeke, E Cartier, A Schenk
Applied Physics Letters75, 1407, 1999


CMOS and memories: From 100 nm to 10 nm
S Tiwari, P M Solomon, JJ Welser, EC Jones, FR McFeely, E Cartier
Microelectronic Engineering 46(1-4), 6, Elsevier Science Ltd., 1999


1998

Hot electron emission lithography
M Poppeller, E Cartier, RM Tromp
Applied Physics Letters73, 2835, 1998

Atomic-scale studies of electron transport through MOS structures
HJ Wen, R Ludeke, DM Newns, SH Lo, E Cartier
Applied Surface Science123, 418--428, Elsevier, 1998

Characterization of the hot-electron-induced degradation in thin SiO2 gate oxides
E Cartier
Microelectronics Reliability 38(2), 201--211, Elsevier, 1998


1997


Determination of physical parameters and reliability of ultra thinoxides
E Cartier
1997 IEEE International Integrated Reliability Workshop Final Report


1996


Conductance measurements on P [sub b] centers at the (111) Si: SiO [sub 2] interface
MJ Uren, JH Stathis, E Cartier
J. Appl. Phys80, 3915, 1996

Anode hole injection and trapping in silicon dioxide
DJ DiMaria, E Cartier, DA Buchanan
Journal of Applied Physics80, 304, 1996

Imaging Hot-Electron Emission from Metal-Oxide-Semiconductor Structures
Mari\'an Ma\v{n}ko\v{s}, RM Tromp, MC Reuter, E Cartier
Physical review letters 76(17), 3200, APS, 1996


1995

Hot electron transport in SiO probed with a scanning tunnel microscope
R Ludeke, A Bauer, E Cartier
Applied Physics Letters66, 730, 1995

Mechanism for stress-induced leakage currents in thin silicon dioxide films
DJ DiMaria, E Cartier
Journal of Applied Physics78, 3883, 1995


1994

Correlation between theory and data for mechanisms leading todielectric breakdown
WW Abadeer, R P Vollertsen, RJ Bolam, DJ DiMaria, E Cartier
VLSI Technology, 1994, pp. 43--44

Interface defect formation in MOSFETs by atomic hydrogen exposure
RE Stahlbush, E Cartier
IEEE Transactions on Nuclear Science 41(6 Part 1), 1844--1853, 1994

Theory of high-field electron transport and impact ionization in silicon dioxide
D Arnold, E Cartier, DJ DiMaria
Physical Review B 49(15), 10278--10297, APS, 1994

Atomic hydrogen-induced interface degradation of reoxidized-nitrided silicon dioxide on silicon
E Cartier, DA Buchanan, GJ Dunn
Applied Physics Letters 64(7), 901--903, New York [etc.] American Institute of Physics., 1994



1993

IMPACT IONIZATION, DEGRADATION, AND BREAKDOWN IN SiO2
DJ DiMaria, E Cartier, D Arnold
Amorphous insulating thin films: symposium held December 1-4, 1992, Boston, Massachusetts, USA, pp. 219, 1993


Impact ionization in silicon
E Cartier, MV Fischetti, EA Eklund, FR McFeely
Applied Physics Letters62, 3339, 1993




1992

Breakdown of the semiclassical description of hot-electron dynamics in SiO\_ $\{$2$\}$
EA Eklund, FR McFeely, E Cartier
Physical review letters 69(9), 1407--1410, APS, 1992

Impact ionization and positive charge formation in silicon dioxide films on silicon
DJ DiMaria, D Arnold, E Cartier
Applied Physics Letters60, 2118, 1992

Degradation and breakdown of silicon dioxide films on silicon
DJ DiMaria, D Arnold, E Cartier
Applied Physics Letters61, 2329, 1992

Direct determination of impact-ionization rates near threshold in semiconductors using soft-x-ray photoemission
EA Eklund, PD Kirchner, DK Shuh, FR McFeely, E Cartier
Physical Review Letters 68(6), 831--834, APS, 1992


Acoustic-phonon runaway and impact ionization by hot electrons in silicon dioxide
D Arnold, E Cartier, DJ DiMaria
Physical Review B 45(3), 1477--1480, APS, 1992


1991

Monte Carlo calculations of laser-induced free electron heating in SiO2
D Arnold, E Cartier, MV Fischetti
Laser-induced damage in optical materials, 1990: proceedings, 22nd annual Boulder Damage Symposium, 24-26 October 1990, Boulder, Colorado, pp. 478, 1991



1990

Electron attenuation lengths at SiO2/Si interfaces
JA Yarmoff, SA Joyce, E Cartier, FR McFeely
Journal of Electron Spectroscopy and Related Phenomena52, 221--227, Elsevier, 1990

Soft-x-ray--induced core-level photoemission as a probe of hot-electron dynamics in SiO\_ $\{$2$\}$
FR McFeely, E Cartier, LJ Terminello, A Santoni, MV Fischetti
Physical Review Letters 65(15), 1937--1940, APS, 1990

Low-energy-electron escape lengths in SiO\_ $\{$2$\}$
FR McFeely, E Cartier, JA Yarmoff, SA Joyce
Physical Review B 42(8), 5191--5200, APS, 1990


1988

Hot-electron transport through thin dielectric films: Boltzmann theory and electron spectroscopy
J Bernasconi, E Cartier, P Pfluger
Physical Review B 38(17), 12567--12581, APS, 1988



1987

Mean-free paths and scattering processes for 0.1--4500 eV electrons in saturated hydrocarbon films
E Cartier, P Pfluger, J J Pireaux, M Rei Vilar
Applied Physics A: Materials Science \& Processing 44(1), 43--53, Springer, 1987


1986

Transport and relaxation of hot conduction electrons in an organic dielectric
E Cartier, P Pfluger
Physical Review B 34(12), 8822--8827, APS, 1986


1985

Different Temperature Dependence of Positron Annihilation in Metal--Metal and Metal--Metalloid Amorphous Alloys
E Cartier, F Heinrich, A Schiltz, U Gubler, H J Guntherodt
Positron Annihilation, 915--917, 1985

Temperature dependence of the positron localisation and storage in calcium-incalated graphite
E Cartier, F Heinrich, V Geiser, HJ Guentherodt
Name: Helv. Phys. Acta, 1985

Positron Annihilation
E Cartier, F Heinrich, H Kiess, G Wieners, M Monkenbusch
Proc, 1985


1984

Variable-energy positron studies of metallic glasses
A Vehanen, KG Lynn, P J Schultz, E Cartier, H J G{\"u}ntherodt, DM Parkin
Physical Review B 29(5), 2371--2381, APS, 1984


1983

Positron annihilation studies of stage-1 donor graphite intercalation compounds
E Cartier, F Heinrich, UM Gubler, P Pfluger, V Geiser, H J G{\"u}ntherodt
Synthetic Metals 8(1-2), 119--124, Elsevier, 1983


1982

43. Positron studies of stage-1 alkali-graphite-intercalation compounds* 1
E Cartier, P Heinrich, others
Carbon 20(2), 129, Elsevier, 1982

Crystallization of various metallic glasses studied by positron annihilation
E Cartier, F Heinrich, M Kueng, HJ Guentherodt
Name: Nucl. Instrum. Methods Phys. Res, 1982


1981



Positron studies of defect structures in metallic glasses
E Cartier, F Heinrich, H J G{\"u}ntherodt
Physics Letters A81, 393--396, 1981

Different Electronic Structures of C sub 6 Li and C sub 8 K Graphite Intercalation Compounds Studied by Positron Annihilation
E Cartier, F Heinrich, P Pfluger, H J Gutherodt
Solid State Communications 38(10), 985--987, 1981

Positron annihilation in graphite intercalation compounds
E Cartier, F Heinrich, P Pfluger, H J G{\"u}ntherodt
Physical Review Letters 46(4), 272--275, APS, 1981