Eric A. Joseph  Eric A. Joseph photo       

contact information

Senior Manager and Research Staff Member, Advanced Materials and Unit Process Technology
Thomas J. Watson Research Center, Yorktown Heights, NY USA
  +1dash914dash945dash2616

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Professional Associations

Professional Associations:  American Vacuum Society  |  IEEE Nuclear and Plasma Sciences Society  |  Materials Research Society (MRS)


2017

Wafer-scale integration of sacrificial nanofluidic chips for detecting and manipulating single DNA molecules
Wang, Chao and Nam, Sung-Wook and Cotte, John M and Jahnes, Christopher V and Colgan, Evan G and Bruce, Robert L and Brink, Markus and Lofaro, Michael F and Patel, Jyotica V and Gignac, Lynne M and others
Nature communications8, 14243, Nature Publishing Group, 2017
Abstract

Highly selective dry etching of polystyrene-poly (methyl methacrylate) block copolymer by gas pulsing carbon monoxide-based plasmas
Miyazoe, Hiroyuki and Jagtiani, Ashish V and Tsai, Hsin-Yu and Engelmann, Sebastian U and Joseph, Eric A
Journal of Physics D: Applied Physics 50(20), 204001, IOP Publishing, 2017

Cyclic Cl2/H2 quasi-atomic layer etching approach for TiN and TaN patterning using organic masks
Nathan Marchack, John M. Papalia, Sebastian Engelmann, Eric A. Joseph
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35(5), 05C314, 2017

Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
Metzler, Dominik and Li, Chen and Engelmann, Sebastian and Bruce, Robert L and Joseph, Eric A and Oehrlein, Gottlieb S
The Journal of Chemical Physics 146(5), 052801, AIP Publishing, 2017
Abstract

Electron beam generated plasmas: Characteristics and etching of silicon nitride
Walton, SG and Boris, DR and Hern{'a}ndez, SC and Lock, EH and Petrova, Tz B and Petrov, GM and Jagtiani, AV and Engelmann, SU and Miyazoe, H and Joseph, EA
Microelectronic Engineering168, 89--96, Elsevier, 2017
Abstract


2016

Applications for Surface Engineering Using Atomic Layer Etching-Invited Paper
Papalia, John and Marchack, Nathan and Bruce, Robert and Miyazoe, Hiroyuki and Engelmann, Sebastian and Joseph, Eric A
Solid State Phenomena, pp. 41--48, 2016

High chi block copolymer DSA to improve pattern quality for FinFET device fabrication
Tsai, Hsinyu and Miyazoe, Hiroyuki and Vora, Ankit and Magbitang, Teddie and Arellano, Noel and Liu, Chi-Chun and Maher, Michael J and Durand, William J and Dawes, Simon J and Bucchignano, James J and others
SPIE Advanced Lithography, pp. 977910--977910, 2016
Abstract

Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
Jagtiani, Ashish V and Miyazoe, Hiroyuki and Chang, Josephine and Farmer, Damon B and Engel, Michael and Neumayer, Deborah and Han, Shu-Jen and Engelmann, Sebastian U and Boris, David R and Hern{'a}ndez, Sandra C and others
Journal of Vacuum Science & Technology A 34(1), 01B103, AVS: Science & Technology of Materials, Interfaces, and Processing, 2016
Abstract

Evaluation of ALE processes for patterning
Papalia, JM and Marchack, N and Bruce, RL and Miyazoe, H and Engelmann, SU and Joseph, EA
SPIE Advanced Lithography, pp. 97820H--97820H, 2016
Abstract

Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
Metzler, Dominik and Li, Chen and Engelmann, Sebastian and Bruce, Robert L and Joseph, Eric A and Oehrlein, Gottlieb S
Journal of Vacuum Science & Technology A 34(1), 01B101, AVS: Science & Technology of Materials, Interfaces, and Processing, 2016
Abstract

Application of cyclic fluorocarbon/argon discharges to device patterning
Metzler, Dominik and Uppireddi, Kishore and Bruce, Robert L and Miyazoe, Hiroyuki and Zhu, Yu and Price, William and Sikorski, Ed S and Li, Chen and Engelmann, Sebastian U and Joseph, Eric A and others
Journal of Vacuum Science & Technology A 34(1), 01B102, AVS: Science & Technology of Materials, Interfaces, and Processing, 2016
Abstract


2015

Critical BEOL Aspects of the Fabrication of a Thermally-Assisted MRAM Device
E. J. O'Sullivan, Daniel Edelstein, Nathan Marchack, Michael Lofaro, Michael Gaidis, Eric Joseph, Anthony Annunziata, Dirk Pfeiffer, P. L. Trouilloud, Yu Zhu, Steve Holmes, Armand Galan, Adam M. Pyzna, Jemima Gonsalves
ECS Transactions 69(3), 127-137, 2015
Abstract

Defect mitigation of plasma-induced delamination of TiW/Cu from SiN x layer in thin si interposer processing with glass carriers
Sukumaran, Vijay and Tran-Quinn, Thuy and Lubguban, Jorge and Webster, Dave and Hedrick, Brittany and Cox, Harry and Wood, James and Miyazoe, Hiroyuki and Yan, Hongwen and Joseph, Eric and others
2015 IEEE 65th Electronic Components and Technology Conference (ECTC), pp. 916--921

Challenges of Tailoring Surface Chemistry and Plasma/Surface Interactions to Advance Atomic Layer Etching
Engelmann, SU and Bruce, RL and Nakamura, M and Metzler, D and Walton, SG and Joseph, EA
ECS Journal of Solid State Science and Technology 4(6), N5054--N5060, The Electrochemical Society, 2015
Abstract


2014

CMOS-Compatible Self-Aligned In 0.53 Ga 0.47 As MOSFETs With Gate Lengths Down to 30 nm
Majumdar, Amlan and Sun, Yanning and Cheng, Cheng-Wei and Kim, Young-Hee and Rana, Uzma and Martin, Ryan M and Bruce, Robert L and Shiu, Kuen-Ting and Zhu, Yu and Farmer, Damon B and others
IEEE Transactions on Electron Devices 61(10), 3399--3404, IEEE, 2014

Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
Tsai, Hsinyu and Miyazoe, Hiroyuki and Chang, Josephine B and Pitera, Jed and Liu, Chi-Chun and Brink, Markus and Lauer, Isaac and Cheng, Joy Y and Engelmann, Sebastian and Rozen, John and others
Electron Devices Meeting (IEDM), 2014 IEEE International, pp. 32--1
Abstract


Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma
Dominik Metzler, Robert L. Bruce, Sebastian Engelmann, Eric A. Joseph, Gottlieb S. Oehrlein
Journal of Vacuum Science & Technology a 32(2), 2014

Fabrication of sub-20 nm nanopore arrays in membranes with embedded metal electrodes at wafer scales
J. Bai, D. Wang, S. W. Nam, H. Peng, R. Bruce, L. Gignac, M. Brink, E. Kratschmer, S. Rossnagel, P. Waggoner, K. Reuter, C. Wang, Y. Astier, V. Balagurusamy, B. Luan, Y. Kwark, E. Joseph, M. Guillorn, S. Polonsky, A. Royyuru, S. Papa Rao, G. Stolovitzky
Nanoscale 6(15), 8900--8906, 2014


2013

Advanced Etch Technology for Nanopatterning II
Zhang, Ying and Oehrlein, Gottlieb S and Lin, Qinghuang
Proc. of SPIE Vol, pp. 868501--1, 2013
Abstract

200 mm Wafer-Scale Integration of Sub-20 nm Sacrificial Nanofluidic Channels for Manipulating and Imaging Single DNA Molecules
C. Wang, S.W. Nam, J.M. Cotte, H. Peng, C.V. Jahnes, D. Wang, R. Bruce, M. Guillorn, L.M. Gignac, W.H. Advocate, C.M. Breslin, M. Brink, J. Bucchignano, E.A. Duch, ..., A. Royyuru, G.A. Stolovitzky, E.G. Colgan, Q. Lin, and S. Polonsky.
International Electron Device Meeting, pp. 369-372, 2013
Abstract

Subtractive W contact and local interconnect co-integration (CLIC)
F Liu, B Fletcher, EA Joseph, Y Zhu, J Gonsalves, W Price, GM Fritz, SU Engelmann, A Pyzyna, Z Zhang, C Cabral, MA Guillorn
Interconnect Technology Conference (IITC), 2013

IBM TJ Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598
C Wang, SW Nam, JM Cotte, H Peng, CV Jahnes, D Wang, R Bruce, M Guillorn, LM Gignac, WH Advocate, others
Electron Devices Meeting (IEDM), 2013 IEEE International, pp. 14--1

IBM Research Division, TJ Watson Research Center, Yorktown Heights, NY 10598
Y Sun, A Majumdar, C-W Cheng, Y-H Kim, U Rana, RM Martin, RL Bruce, K-T Shiu, Y Zhu, D Farmer, others
Electron Devices Meeting (IEDM), 2013 IEEE International, pp. 2--7

A scalable volume-confined phase change memory using physical vapor deposition
S.C. Lai, S. Kim, M. BrightSky, Y. Zhu, E. Joseph, R. Bruce, H.Y. Cheng, A. Ray, S. Raoux, J.Y. Wu, T.Y. Wang, N.S. Cortes, C.M. Lin, Y.Y. Lin, R. Cheek, E.K. Lai, M.H. Lee, H.L. Lung, C. Lam
2013 Symposium on VLSI Technology, T132-3

Recovery dynamics and fast (sub-50ns) read operation with Access Devices for 3D Crosspoint Memory based on Mixed-Ionic-Electronic-Conduction (MIEC)
GW Burr, K Virwani, RS Shenoy, G Fraczak, CT Rettner, A Padilla, RS King, K Nguyen, AN Bowers, M Jurich, others
VLSI Technology (VLSIT), 2013 Symposium on, pp. T66--T67

Advanced Plasma Etch for the 10nm node and Beyond
E. A. Joseph, S. U. Engelmann, H. Miyazoe, R. L. Bruce, M. Nakamura, T. Suzuki, M. Hoinkis, Y Zhang, GS Oehrlein, Q Lin
Advanced Etch Technology For Nanopatterning Ii8685, 2013

Pattern transfer of directed self-assembly patterns for CMOS device applications
H Tsai, H Miyazoe, S Engelmann, CC Liu, L Gignac, J Bucchignano, D Klaus, C Breslin, E Joseph, J Cheng, D Sanders, M Guillorn
J. Micro/Nanolith. MEMS MOEMS., 2013


2012

The impact of melting during reset operation on the reliability of phase change memory
Pei-Ying Du, Jau-Yi Wu, Tzu-Hsuan Hsu, Ming-Hsiu Lee, Tien-Yen Wang, Huai-Yu Cheng, Erh-Kun Lai, Sheng-Chih Lai, Hsiang-Lan Lung, SangBum Kim, others
Reliability Physics Symposium (IRPS), 2012 IEEE International, pp. 6C--2

Optimization of programming current on endurance of phase change memory
S Kim, PY Du, J Li, M Breitwisch, Y Zhu, S Mittal, R Cheek, T-H Hsu, MH Lee, A Schrott, others
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on, pp. 1--2

Sub-30 nm scaling and high-speed operation of fully-confined access-devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials
K Virwani, GW Burr, RS Shenoy, CT Rettner, A Padilla, T Topuria, PM Rice, G Ho, RS King, K Nguyen, others
Proc. IEEE IEDM, pp. 2--7, 2012

Integrated on-chip inductors with electroplated magnetic yokes
Naigang Wang, Eugene J O’Sullivan, Philipp Herget, Bipin Rajendran, Leslie E Krupp, Lubomyr T Romankiw, Bucknell C Webb, Robert Fontana, Elizabeth A Duch, Eric A Joseph, others
Journal of Applied Physics 111(7), 07E732, AIP Publishing, 2012

A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N) x Sb y Te z phase change material
HY Cheng, JY Wu, R Cheek, S Raoux, M BrightSky, D Garbin, S Kim, TH Hsu, Y Zhu, EK Lai, others
Electron Devices Meeting (IEDM), 2012 IEEE International, pp. 31--1

Large-scale (512kbit) integration of Multilayer-ready Access-Devices based on Mixed-Ionic-Electronic-Conduction (MIEC) at 100\% yield
GW Burr, K. Virwani, RS Shenoy, A. Padilla, M. BrightSky, EA Joseph, M. Lofaro, AJ Kellock, RS King, K. Nguyen, others
VLSI Technology (VLSIT), 2012 Symposium on, pp. 41--42


2011

Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5
JS Washington, EA Joseph, S Raoux, JL Jordan-Sweet, D Miller, H-Y Cheng, AG Schrott, C-F Chen, R Dasaka, B Shelby, others
Journal of Applied Physics 109(3), 034502, AIP Publishing, 2011

A method to maintain phase-change memory pre-coding data retention after high temperature solder bonding process in embedded systems
HL Lung, M Breitwisch, JY Wu, Pei-Ying Du, Y Zhu, MH Lee, YH Shih, EK Lai, R Dasaka, TY Wang, others
VLSI Technology (VLSIT), 2011 Symposium on, pp. 98--99

Endurance and Scaling Trends of Novel Access-Devices for Multi-Layer Crosspoint-Memory based on Mixed-Ionic-Electronic-Conduction (MIEC) ...
RS Shenoy, K. Gopalakrishnan, B. Jackson, K. Virwani, GW Burr, CT Rettner, A. Padilla, DS Bethune, RM Shelby, AJ Kellock, others
VLSI Technology (VLSIT), 2011 Symposium on, pp. 94--95

A low power phase change memory using thermally confined TaN/TiN bottom electrode
JY Wu, M Breitwisch, S Kim, TH Hsu, R Cheek, PY Du, J Li, EK Lai, Y Zhu, TY Wang, others
Electron Devices Meeting (IEDM), 2011 IEEE International, pp. 3--2

A 0.021 $\mu$m 2 trigate SRAM cell with aggressively scaled gate and contact pitch
MA Guillorn, J Chang, A Pyzyna, S Engelmann, M Glodde, E Joseph, R Bruce, JA Ott, A Majumdar, F Liu, others
VLSI Technology (VLSIT), 2011 Symposium on, pp. 64--65

Racetrack memory cell array with integrated magnetic tunnel junction readout
AJ Annunziata, MC Gaidis, L Thomas, CW Chien, CC Hung, P Chevalier, EJ O'Sullivan, JP Hummel, EA Joseph, Y Zhu, others
Electron Devices Meeting (IEDM), 2011 IEEE International, pp. 24--3

A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge x Sb y Te z phase change material
HY Cheng, TH Hsu, S Raoux, JY Wu, PY Du, M Breitwisch, Y Zhu, EK Lai, E Joseph, S Mittal, others
Electron Devices Meeting (IEDM), 2011 IEEE International, pp. 3--4


2010

Fabrication of dual damascene BEOL structures using a Multi-Level Multiple Exposure (MLME) scheme--Part 1. Lithographic patterning
Goldfarb, Dario L and Harrer, Stefan and Arnold, John C and Holmes, Steven J and Chen, Rex and Tang, Cherry and Fender, Nicolette and Slezak, Mark and Della Guardia, Ronald A and Joseph, Eric A and others
Proc. of SPIE Vol, pp. 76390I--1, 2010
Abstract

Generation of local magnetic fields at megahertz rates for the study of domain wall propagation in magnetic nanowires
B. Bergman, R. Moriya, M. Hayashi, L. Thomas, C. Tyberg, Y. Lu, E. Joseph, M.B. Rothwell, J. Hummel, W.J. Gallagher, others
Applied Physics Letters 20(26), 262503, 2010

Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 2: RIE-based pattern transfer and completion of dual damascene process yielding an electrically functional via chain
Harrer, Stefan and Arnold, John C and Goldfarb, Dario L and Holmes, Steven J and Chen, Rex and Tang, Cherry and Slezak, Mark and Fender, Nicolette and Della Guardia, Ronald A and Joseph, Eric A and others
SPIE Advanced Lithography, pp. 763919--763919, 2010
Abstract

Influence of bottom contact material on the selective chemical vapor deposition of crystalline GeSbTe alloys
Alejandro Schrott, Chieh-Fang Chen, Matthew J Breitwisch, Eric A Joseph, Ravi K Dasaka, Roger W Cheek, Yu Zhu, Chung H Lam
MRS Proceedings, 2010

Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 1: lithographic patterning
DL Goldfarb, S Harrer, JC Arnold, SJ Holmes, R Chen, C Tang, N Fender, M Slezak, RA Della Guardia, EA Joseph, SU Engelmann, RP Varanasi, ME Colburn
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 2010

Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 2: RIE-based pattern transfer and completion of dual ...
S Harrer, JC Arnold, DL Goldfarb, SJ Holmes, R Chen, C Tang, M Slezak, N Fender, RA Della Guardia, EA Joseph, SU Engelmann, ST Chen, D Horak, Y Yin, RP Varanasi, ME Colburn
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 2010

The impact of hole-induced electromigration on the cycling endurance of phase change memory
MH Lee, R Cheek, CF Chen, Y Zhu, J Bruley, FH Baumann, YH Shih, EK Lai, M Breitwisch, A Schrott, others
Electron Devices Meeting (IEDM), 2010 IEEE International, pp. 28--6

Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm
S Bangsaruntip, A Majumdar, GM Cohen, SU Engelmann, Y Zhang, M Guillorn, LM Gignac, S Mittal, WS Graham, EA Joseph, DP Klaus, J Chang, EA Cartier, JW Sleight
VLSI Technology (VLSIT), 2010 Symposium on


2009

The Influence of Nitrogen Doping on the Chemical and Local Bonding Environment of Amorphous and Crystalline Ge 2 Sb 2 Te 5
Washington, Joseph and Joseph, Eric A and Paesler, Michael A and Lucovsky, Gerald and Jordan-Sweet, Jean L and Raoux, Simone and Chen, Chieh-Fang and Pyzyna, Adam and Dasaka, Ravi K and Lam, Chung H and others
MRS Online Proceedings Library Archive1160, Cambridge University Press, 2009
Abstract

Trigate 6T SRAM scaling to 0.06 $\mu$m 2
M Guillorna, J Chang, A Pyzyna, S Engelmann, E Joseph, B Fletcher, C Cabral Jr, CH Lin, A Bryant, M Darnon, others
Electron Devices Meeting (IEDM), 2009 IEEE International, pp. 1--3

Endurance Improvement of Ge2Sb2Te5-Based Phase Change Memory
C.-F. Chen, A. Schrott, M. H. Lee, S. Raoux, Y. H. Shih, M. Breitwisch, F. H. Baumann, E. K.Lai, T. M. Shaw, P. Flaitz, R. Cheek, E. A. Joseph, S. H. Chen, B. Rajendran, H.L.Lung, C.Lam
IEEE International Memory Workshop, 2009, pp. 1--2

Understanding amorphous states of phase-change memory using Frenkel-Poole model
YH Shih, MH Lee, M Breitwisch, R Cheek, JY Wu, B Rajendran, Y Zhu, EK Lai, CF Chen, HY Cheng, others
Electron Devices Meeting (IEDM), 2009 IEEE International, pp. 1--4

Dynamic Resistance—A Metric for Variability Characterization of Phase-Change Memory
Bipin Rajendran, Matt Breitwisch, Ming-Hsiu Lee, Geoffrey W Burr, Yen-Hao Shih, Roger Cheek, Alejandro Schrott, Chieh-Fang Chen, Eric Joseph, Ravi Dasaka, others
Electron Device Letters, IEEE 30(2), 126--129, IEEE, 2009

A three-terminal spin-torque-driven magnetic switch
JZ Sun, MC Gaidis, EJ OSullivan, EA Joseph, G Hu, DW Abraham, JJ Nowak, PL Trouilloud, Yu Lu, SL Brown, others
Applied physics letters 95(8), 083506--083506, AIP, 2009

Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping
M Guillorn, J Chang, N Fuller, J Patel, M Darnon, A Pyzyna, E Joseph, S Engelmann, J Ott, J Newbury, D Klaus, J Bucchignano, P Joshi, C Scerbo, E Kratschmer, W Graham, B To, J Parisi, Y Zhang, W Haensch
J. Vac. Sci. Technol. B 27, 2009

The Influence of Nitrogen Doping on the Chemical and Local Bonding Environment of Amorphous and Crystalline Ge2Sb2Te5
JS Washington, E Joseph, MA Paesler, G Lucovsky, JL Jordan-Sweet, S Raoux, CF Chen, A Pyzyna, RK Dasaka, A Schrott, others
Material Research Society Spring Meeting, pp. 11100--11190, 2009


2008

Patterning of N: Ge 2 Sb 2 Te 5 films and the characterization of etch induced modification for non-volatile phase change memory applications
EA Joseph, TD Happ, S-H Chen, S Raoux, CF Chen, M Breitwisch, AG Schrott, S Zaidi, R Dasaka, B Yee, others
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on, pp. 142--143

On the dynamic resistance and reliability of phase change memory
B Rajendran, MH Lee, M Breitwisch, GW Burr, YH Shih, R Cheek, A Schrott, CF Chen, M Lamorey, E Joseph, others
VLSI Technology, 2008 Symposium on, pp. 96--97

Role of chamber dimension in fluorocarbon based deposition and etching of SiO and its effects on gas and surface-phase chemistry
EA Joseph, B S Zhou, SP Sant, LJ Overzet, MJ Goeckner
Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and Films26, 545, 2008

Low-k spacers for advanced low power CMOS devices with reduced parasitic capacitances
E Huang, E Joseph, H Bu, X Wang, N Fuller, C Ouyang, E Simonyi, H Shobha, T Cheng, A Mallikarjunan, others
IEEE International SOI Conference, 2008, pp. 19--20

Mechanisms of retention loss in Ge 2 Sb 2 Te 5-based Phase-Change Memory
YH Shih, JY Wu, B Rajendran, MH Lee, R Cheek, M Lamorey, M Breitwisch, Y Zhu, EK Lai, CF Chen, others
IEEE International Electron Devices Meeting, 2008, pp. 1--4

Write strategies for 2 and 4-bit multi-level phase-change memory
T Nirschl, JB Phipp, TD Happ, GW Burr, B Rajendran, M H Lee, A Schrott, M Yang, M Breitwisch, C F Chen, others
Electron Devices Meeting, 2007, pp. 461--464, 2008

Transition-metal-oxide-based resistance-change memories
S. F. Karg, G. I. Meijer, J. G. Bednorz, C. T. Rettner, A. G. Schrott, E. A. Joseph, C. H. Lam, M. Janousch, U. Staub, F. La Mattina, S. F. Alvarado, D. Widmer, R. Stutz, U. Drechsler, D. Caimi
IBM Journal of Research and Development 52, 481, 2008


2007

Effects of pore morphology on the diffusive properties of a porous low-$kappa$ dielectric
Joseph, EA and Sant, SP and Goeckner, MJ and Overzet, LJ and Peng, HG and Gidley, DW and Kastenmeier, BEE
Journal of Vacuum Science & Technology B 25(5), 1684--1693, AVS: Science & Technology of Materials, Interfaces, and Processing, 2007
Abstract

Effects of pore morphology on the diffusive properties of a porous low-$kappa$ dielectric
Joseph, EA and Sant, SP and Goeckner, MJ and Overzet, LJ and Peng, HG and Gidley, DW and Kastenmeier, BEE
Journal of Vacuum Science & Technology B 25(5), 1684--1693, AVS: Science & Technology of Materials, Interfaces, and Processing, 2007
Abstract

Effects of pore morphology on the diffusive properties of a porous low-$\kappa$ dielectric
EA Joseph, SP Sant, MJ Goeckner, LJ Overzet, HG Peng, DW Gidley, BEE Kastenmeier
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures25, 1684, 2007

Novel lithography-independent pore phase change memory
M Breitwisch, T Nirschl, CF Chen, Y Zhu, MH Lee, M Lamorey, GW Burr, E Joseph, A Schrott, JB Philipp, others
VLSI Technology, 2007 IEEE Symposium on, pp. 100--101


2006

Novel one-mask self-heating pillar phase change memory
TD Happ, M Breitwisch, A Schrott, JB Philipp, MH Lee, R Cheek, T Nirschl, M Lamorey, CH Ho, SH Chen, others
VLSI Technology, 2006, pp. 120--121

Ultra-thin phase-change bridge memory device using GeSb
YC Chen, CT Rettner, S. Raoux, GW Burr, SH Chen, RM Shelby, M. Salinga, WP Risk, TD Happ, GM McClelland, others
Electron Devices Meeting, 2006. IEDM'06. International, pp. 1--4


2004

Modified gaseous electronics conference reference cell for the study of plasma-surface-gas interactions
MJ Goeckner, JM Marquis, BJ Markham, AK Jindal, EA Joseph, B-S Zhou
Review of scientific instruments 75(4), 884--890, AIP Publishing, 2004

Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
T Standaert, C Hedlund, EA Joseph, GS Oehrlein, TJ Dalton
Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and Films22, 53, 2004


2000

Etching of xerogel in high-density fluorocarbon plasmas
T Standaert, EA Joseph, GS Oehrlein, A Jain, WN Gill, PC Wayner Jr, JL Plawsky
Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and Films18, 2742, 2000


Year Unknown

Fabrication of sub-20 nm Nanopore Arrays in Membranes with Embedded Metal Electrodes at Wafer Scales: Supporting Information
Bai, Jingwei and Wang, Deqiang and Nam, Sung-wook and Peng, Hongbo and Bruce, Robert and Gignac, Lynn and Brink, Markus and Kratschmer, Ernst and Rossnagel, Stephen and Waggoner, Phil and others
pdfs.semanticscholar.org, 0
Abstract

SESSION 5B
RS Shenoy, K Gopalakrishnan, B Jackson, K Virwani, GW Burr, CT Rettner, A Padilla, DS Bethune, RM Shelby, AJ Kellock, others
ieeexplore.ieee.org, 0

2013 IEEE International Interconnect Technology Conference--IITC 2013
Azad Naeemi, Douglas Chen-Hua Yu, Muhannad Bakir, NS Nagaraj, Fei Liu, Benjamin Fletcher, Eric Joseph, Yu Zhu, Jemima Gonsalves, William Price, others
ieeexplore.ieee.org, 0