Lynne M. Gignac  Lynne M. Gignac photo       

contact information

TEM analysis; interconnect materials research
Thomas J. Watson Research Center, Yorktown Heights, NY USA
  +1dash914dash945dash3352

links

Professional Associations

Professional Associations:  Microscopy Society of America


2016

High chi block copolymer DSA to improve pattern quality for FinFET device fabrication
Tsai, Hsinyu and Miyazoe, Hiroyuki and Vora, Ankit and Magbitang, Teddie and Arellano, Noel and Liu, Chi-Chun and Maher, Michael J and Durand, William J and Dawes, Simon J and Bucchignano, James J and others
SPIE Advanced Lithography, pp. 977910--977910, 2016
Abstract


2015

III--V device integration on Si using template-assisted selective epitaxy
Schmid, Heinz and Borg, Mattias and Moselund, Kirsten and Gignac, Lynne and Breslin, Chris and Bruley, John and Cutaia, Davide and Riel, Heike
2015 73rd Annual Device Research Conference (DRC), pp. 255--256
Abstract

First realization of the piezoelectronic stress-based transduction device
Chang, Josephine B and Miyazoe, Hiroyuki and Copel, Matthew and Solomon, Paul M and Liu, Xiao-Hu and Shaw, Thomas M and Schrott, Alejandro G and Gignac, Lynne M and Martyna, Glenn J and Newns, Dennis M
Nanotechnology 26(37), 375201, IOP Publishing, 2015
Abstract

Vertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates
Cutaia, Davide and Moselund, Kirsten E and Borg, Mattias and Schmid, Heinz and Gignac, Lynne and Breslin, Chris M and Karg, Siegfried and Uccelli, Emanuele and Riel, Heike
IEEE Journal of the Electron Devices Society 3(3), 176--183, IEEE, 2015
Abstract


2014

CDSEM AFM hybrid metrology for the characterization of gate-all-around silicon nano wires
Levi, Shimon and Schwarzband, Ishai and Weinberg, Yakov and Cornell, Roger and Adan, Ofer and Cohen, Guy M and Gignac, Lynne and Bangsaruntip, Sarunya and Hand, Sean and Osborne, Jason and others
SPIE Advanced Lithography, pp. 905008--905008, 2014
Abstract

Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
Tsai, Hsinyu and Miyazoe, Hiroyuki and Chang, Josephine B and Pitera, Jed and Liu, Chi-Chun and Brink, Markus and Lauer, Isaac and Cheng, Joy Y and Engelmann, Sebastian and Rozen, John and others
2014 IEEE International Electron Devices Meeting, pp. 32--1
Abstract

Vertical III--V nanowire device integration on Si (100)
Borg, Mattias and Schmid, Heinz and Moselund, Kirsten E and Signorello, Giorgio and Gignac, Lynne and Bruley, John and Breslin, Chris and Das Kanungo, Pratyush and Werner, Peter and Riel, Heike
Nano letters 14(4), 1914--1920, ACS Publications, 2014
Abstract


2013

Stacking Graphene Channels in Parallel for Enhanced Performance With the Same Footprint
Franklin, Aaron D and Oida, Satoshi and Farmer, Damon B and Smith, Joshua T and Han, Shu-Jen and Breslin, Chris M and Gignac, Lynne
IEEE Electron Device Letters 34(4), 556--558, IEEE, 2013
Abstract

Automatic Registering and Stitching of TEM/STEM Image Mosaics
Lin, Chung-Ching and Stellari, Franco and Gignac, Lynne and Song, Peilin and Bruley, John
ISTFA 2013: Proceedings from the 39th International Symposium for Testing and Failure Analysis, pp. 152
Abstract

Buckling characterization of gate all around silicon nanowires
Levi, Shimon and Schwarzband, Ishai and Weinberg, Yakov and Cornell, Roger and Adan, Ofer and Cohen, Guy M and Cen, Cheng and Gignac, Lynne
SPIE Advanced Lithography, pp. 868130--868130, 2013
Abstract

Selective area growth of III? V nanowires and their heterostructures on silicon in a nanotube template: towards monolithic integration of nano-devices
Kanungo, Pratyush Das and Schmid, Heinz and Gignac, Lynne M and Breslin, Chris and Bruley, John and Bessire, Cedric D and Riel, Heike and others
Nanotechnology 24(22), 225304, IOP Publishing, 2013
Abstract

Pattern transfer of directed self-assembly patterns for CMOS device applications
Tsai, Hsin-Yu and Miyazoe, Hiroyuki and Engelmann, Sebastian and Liu, Chi-Chun and Gignac, Lynne and Bucchignano, James and Klaus, David and Breslin, Chris and Joseph, Eric and Cheng, Joy and others
Journal of Micro/Nanolithography, MEMS, and MOEMS 12(4), 041305--041305, International Society for Optics and Photonics, 2013
Abstract

Carbon nanotube complementary wrap-gate transistors
Franklin, Aaron D and Koswatta, Siyuranga O and Farmer, Damon B and Smith, Joshua T and Gignac, Lynne and Breslin, Chris M and Han, Shu-Jen and Tulevski, George S and Miyazoe, Hiroyuki and Haensch, Wilfried and others
Nano letters 13(6), 2490--2495, ACS Publications, 2013
Abstract


2012

Roughness metrology of gate all around silicon nanowire devices
Levi, Shimon and Schwarzband, Ishai and Kris, Roman and Adan, Ofer and Cohen, Guy M and Bangsaruntip, Sarunya and Gignac, Lynne
SPIE Advanced Lithography, pp. 83240H--83240H, 2012
Abstract

Characterization of semiconductor nanostructures by scanning electron microscopy
Gignac, Lynne M and Wells, Oliver C
Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization (In 2 Volumes). Edited by Haight Richard A et al. Published by World Scientific Publishing Co. Pte. Ltd., 2012. ISBN# 9789814322843, pp. 1-42, pp. 1--42
Abstract

A Novel Integrated Reliability Test System for BEOL TDDB Study
Chen, Jifeng and Song, Peilin and Shaw, Thomas M and Stellari, Franco and Gignac, Lynne and Breslin, Chris and Pfeiffer, Dirk and Bonila, Griselda
ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis: November 11-15, 2012, Phoenix Convention Center, Phoenix, Arizona, USA, pp. 297
Abstract

Mechanism study of Ag catalyzed directional etch of silicon for nanowire formation
Shao, Ingrid and Gignac, Lynne
ECS Transactions 41(35), 9--25, The Electrochemical Society, 2012
Abstract

Room-temperature carrier transport in highperformance short-channel silicon nanowire MOSFETs
Majumdar, Amlan and Bangsaruntip, Sarunya and Cohen, Guy M and Gignac, Lynne M and Guillorn, Michael and Frank, Martin M and Sleight, Jeffrey W and Antoniadis, Dimitri A
IEEE IEDM Tech. Dig, 179--182, 2012
Abstract

InAs nanowire growth on oxide-masked< 111> silicon
Bj{"o}rk, Mikael T and Schmid, Heinz and Breslin, Chris M and Gignac, Lynne and Riel, Heike
Journal of crystal growth 344(1), 31--37, Elsevier, 2012
Abstract

Sub-10 nm carbon nanotube transistor
Franklin, Aaron D and Luisier, Mathieu and Han, Shu-Jen and Tulevski, George and Breslin, Chris M and Gignac, Lynne and Lundstrom, Mark S and Haensch, Wilfried
Nano letters 12(2), 758--762, ACS Publications, 2012
Abstract


2011

Multiple double cross-section transmission electron microscope sample preparation of specific sub-10 nm diameter Si nanowire devices
Gignac, Lynne M and Mittal, Surbhi and Bangsaruntip, Sarunya and Cohen, Guy M and Sleight, Jeffrey W
Microscopy and Microanalysis 17(06), 889--895, Cambridge Univ Press, 2011
Abstract


2010

(Invited) High Performance and Highly Uniform Metal Hi-K Gate-All-Around Silicon Nanowire MOSFETs
Sleight, Jeffrey W and Bangsaruntip, Sarunya and Cohen, Guy and Majumdar, Amlan and Zhang, Ying and Engelmann, Sebastian and Fuller, Nicholas and Gignac, Lynne and Mittal, Surbhi and Newbury, Joseph and others
ECS Transactions 28(1), 179--189, The Electrochemical Society, 2010
Abstract


2009

Hydrazine-based deposition route for device-quality CIGS films
Mitzi, David B and Yuan, Min and Liu, Wei and Kellock, Andrew J and Chey, S Jay and Gignac, Lynne and Schrott, Alex G
Thin Solid Films 517(7), 2158--2162, Elsevier, 2009
Abstract

Electromigration Challenges for Nanoscale Cu Wiring
C K Hu, LM Gignac, E Liniger, E Huang, S Greco, P McLaughlin, C C Yang, JJ Demarest
AIP Conference Proceedings, pp. 3, 2009

Three-Dimensional Measurement of Line Edge Roughness in Copper Wires Using Electron Tomography
P Ercius, L M Gignac, C K Hu, D A Muller
Microscopy and Microanalysis 15(03), 244--250, Cambridge Univ Press, 2009

Precision, Double XTEM Sample Preparation of Site Specific Si Nanowires
LM Gignac, S Mittal, S Bangsaruntip, GM Cohen, JW Sleight
Microscopy and Microanalysis15, 330, 2009


2008

Extendibility of NiPt silicide to the 22-nm node CMOS technology
Kazuya Ohuchi, Christian Lavoie, Conal E Murray, Chris P D'Emic, Isaac Lauer, Jack O Chu, Bin Yang, Paul Besser, Lynne M Gignac, John Bruley, others
Junction Technology, 2008. IWJT'08. Extended Abstracts-2008 8th International workshop on, pp. 150--153

Backscattered Electron Imaging in the Scanning Electron Microscope: the Use of Either:(a) High Incident Energy or (b) an Array Detector
LM Gignac, OC Wells, CK Hu, J Bruley, CE Murray, A Frye
Microscopy and Microanalysis 14(S2), 120--121, Cambridge Univ Press, 2008


2007

Low dielectric constant nanocomposite thin films based on silica nanoparticle and organic thermosets
Lin, Qinghuang and Cohen, Stephen A and Gignac, Lynne and Herbst, Brian and Klaus, David and Simonyi, Eva and Hedrick, Jeffrey and Warlaumont, John and Lee, Hae-Jeong and Wu, Wen-li
Journal of Polymer Science Part B: Polymer Physics 45(12), 1482--1493, Wiley Online Library, 2007
Abstract

Semiconductor Devices, Materials, and Processing-Comparison of Electromigration in Cu Interconnects with Atomic-Layer-of Physical-Vapor-Deposited TaN Liners
CK Hu, L Gignac, E Liniger, S Grunow, JJ Demarest, B Redder, A Simon, SL Liew
Journal of the Electrochemical Society 154(9), 755, New York, NY: Electrochemical Society, 1948-, 2007

Comparison of electromigration in Cu interconnects with ALD or PVD TaN liners
CK Hu, L Gignac, E Liniger, S Grunow, A Simon, SL Liew
2007 - electrochem.org

Electron Tomography of Semiconductor Devices
P Ercius, DA Muller, M Weyland, L Gignac
Microscopy and Microanalysis 13(S02), 824--825, Cambridge Univ Press, 2007

Impact of Cu microstructure on electromigration reliability
C K Hu, L Gignac, B Baker, E Liniger, R Yu, P Flaitz
IEEE 2007 International Interconnect Technology Conference, pp. 93--95


2006

Interfacial reactions of Sn-Ag-Cu solders modified by minor Zn alloying addition
Kang, Sung K and Leonard, Donovan and Shih, Da-Yuan and Gignac, Lynne and Henderson, DW and Cho, Sungil and Yu, Jin
Journal of Electronic Materials 35(3), 479--485, Springer, 2006
Abstract

Tunable Workfunction for Fully Silicified Gates (FUSI) and Proposed Mechanisms
YH Kim, C Cabral, EP Gusev, L Gignac, M Gribelyuk, M Ieong
VLSI Technology, Systems, and Applications, 2006 International Symposium on, pp. 1--2

Imaging at High Beam Energies in the Scanning Electron Microscope
L Gignac, S Boettcher, A Bol, O Wells, M Kawasaki
Microscopy and Microanalysis 12(S02), 1444--1445, Cambridge Univ Press, 2006

Damascene Copper Integration Impact on Electomigration and Stress Migration
A K Stamper, H Baks, E Cooney, L Gignac, J Gill, C Hu
Advanced Metallization Conference 2005(AMC 2005), 2006



2005

Electromigration in Cu Thin Films
Hu, Chao-Kun and Gignac, Lynne M and Rosenberg, Robert
Diffusion processes in advanced technological materials, pp. 405--487, Springer, 2005
Abstract

Tungsten oxide nanowire growth by chemically induced strain
Klinke, Christian and Hannon, James B and Gignac, Lynne and Reuter, Kathleen and Avouris, Phaedon
The Journal of Physical Chemistry B 109(38), 17787--17790, ACS Publications, 2005
Abstract

High Energy Backscattered Electron Imaging of Subsurface Cu Interconnects
L M Gignac, M Kawasaki, S H Boettcher, O C Wells
JEOL News 40(1), 13--17, 2005


2004

(Invited) Effects of overlayers on electromigration reliability improvement for Cu/low k interconnects
CK Hu, D Canaperi, ST Chen, LM Gignac, B Herbst, S Kaldor, M Krishnan, E Liniger, DL Rath, D Restaino
IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, pp. 222--228, 2004

Top-down topography of deeply etched silicon in the scanning electron microscope
O C Wells, C E Murray, J L Rullan, L M Gignac
Review of Scientific Instruments75, 2524, 2004


2003

Does line-edge roughness matter?: FEOL and BEOL perspectives
Lin, Qinghuang and Black, Charles T and Detavernier, Christophe and Gignac, Lynne and Guarini, Kathryn and Herbst, Brian and Kim, Hyungjun and Oldiges, Philip and Petrillo, Karen E and Sanchez, Martha I
Microlithography 2003, pp. 1076--1085
Abstract

Growth of crystalline defects on the surface of FSG dielectrics.
J Gambino, J Burnham, M Chace, M Gibson, L Gignac, B Herbst, S Luce, T McDevitt, T Pricer, A Stamper
Advanced Metallization Conference 2003(AMC 2003), pp. 189--193

Does line-edge roughness matter?: FEOL and BEOL perspectives [5039-122]
Q Lin, CT Black, C Detavernier, L Gignac, K Guarini, B Herbst, H Kim, P Oldiges, KE Petrillo, MI Sanchez
PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, pp. 1076--1085, 2003


2002

A COMPARISON OF GRAIN SIZE MEASUREMENTS IN AL-CU THIN FILMS: IMAGING VERSES DIFFRACTION TECHNIQUES
L Gignac, CE Murray, KP Rodbell, M Gribelyuk
Microscopy and Microanalysis 8(S02), 672--673, Cambridge Univ Press, 2002


2001

Polycrystalline Metal and Magnetic Thin Films 2000
Clemens, Bruce M and Gignac, Lynne and MacLaren, James M and Thomas, Olivier
2001 - Cambridge University Press, Cambridge University Press

EXTENDIBILITY of Cu DAMASCENE to 0.1 pm WIDE INTERCONNECTIONS
CK Hu, KY Lee, L Gignac, SM Rossnagel, C Uzoh, K Chan, P Roper, JME Harper
mrs.org, 2001

Electromigration threshold in single-damascene copper interconnectswith SiO 2 dielectrics
P C Wang, RG Filippi, LM Gignac
Interconnect Technology Conference, 2001, pp. 263--265

Dynamics of one-dimensional domain walls interacting with disorder potential
L Krusin-Elbaum, T Shibauchi, B Argyle, L Gignac, T Zabel, D Weller
Journal of Magnetism and Magnetic Materials226, 1317--1318, Elsevier, 2001


2000


Improved-reliability damascene interconnects and process of manufacture
L Clevenger, R G Filippi, J Gambino, L Gignac, J Hurd, M Hoinkis, R C Iggulden, E Mehter, K P Rodbell, F Schnabel, others
2000 - freepatentsonline.com


1999

Mechanisms for microstructure evolution in electroplated copper thin films
JM Harper, C Cabral, PC Andricacos, L Gignac, IC Noyan, KP Rodbell, CK Hu
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, pp. 223--228, 1999

In Situ Study of Ti/TiN Stability Under Nitrogen Anneal
PW DeHaven, KP Rodbell, L Gignac
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, pp. 465--470, 1999

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)-Mechanisms for microstructure evolution in electroplated copper thin films near room temperature
JME Harper, C Cabral Jr, PC Andricacos, L Gignac, IC Noyan, KP Rodbell, CK Hu
Journal of Applied Physics 86(5), 2516--2525, New York, NY: American Institute of Physics, c1937-, 1999

DOPANTS IN ELECTROPLATED COPPER1
PC Andricacos, C Parksb, C Cabral, R Wachnikb, R Tsaia, S Malhotra, P Lockeb, J Fluegel, J Horkans, K Kwietniaka, others
Electrochemical processing in ULSI fabricatrion and semiconductor/metal deposition II: proceedings of the International Symposium, pp. 111, 1999

Crystallographic texture in 1 g dram reactive ion etched vs. damascene Al-Cu lines
KP Rodbell, LM Gignac, JL Hurd, Y Y Wang, L Clevenger
ICOTOM 12: 12 th International Conference on Textures of Materials, pp. 1287--1292, 1999


1998

Dual damascene aluminum for 1-Gbit DRAMs, part 3
Iggulden, Roy and Clevenger, Larry and Costrini, Greg and Dobuzinsky, David and Filippi, Ronald and Gambino, Jeff and Lin, Chenting and Schnabel, Florian and Weber, Stefan and Gignac, Lynne and others
Solid state technology 41(11), PennWell Publishing Corp., 1998
Abstract

Dual damascene aluminum for 1-Gbit DRAMs-A four-level interconnect process sequence with three levels of minimum pitch dual damascene wiring designed for a 1-Gbit DRAM provides up to a 10\% saving
R Iggulden, L Clevenger, G Costrini, D Dobuzinsky, R Filippi, J Gambino, C Lin, F Schnabel, S Weber, L Gignac, others
Solid State Technology 41(11), 37--46, [Port Washington, NY: Cowan Pub. Corp., c1968-, 1998

Electromigration in physical vapor deposited Cu lines
CK Hu, KY Lee, L Gignac, R Carruthers
AIP Conference Proceedings, pp. 113, 1998

EXTENDIBILITY of Cu DAMASCENE to 0.1 urn WIDE INTERCONNECTIONS
CK Hu, KY Lee, L Gignac, SM Rossnagel, C Uzoh, K Chan, P Roper, JME Harper
Advanced interconnects and contact materials and processes for future integrated circuits: symposium held April 13-16, 1998, San Francisco, California, USA, pp. 287


1997

INSITV TEM ANALYSIS OF TiSi, C49-C54 TRANSFORMATIONS DURING ANNEALING
LM GIGNAC, V SVILAN, C C LA CLEVENGER JR, C LAVOIE
Thin films--structure and morphology: symposium held December 2-6, 1996, Boston, Massachusetts, USA, pp. 255, 1997

The stability of Si12xGex strained layers on small-area trench-isolated silicon
K Schonenberg, S W Chan, D Harame, M Gilbert, C Stanis, L Gignac
J. Mater. Res 12(2), 365, 1997


1996

THE STABILITY OF SIGE STRAINED LAYERS ON SMALL AREA TRENCH ISOLATED SILICON ISLANDS
Schonenberg, K and Hammc, DL and Gilbert, M and Stanis, Carol and Gignac, Lynne and Chan, Siu-Wai
Proceedings of the Fourth International Symposium of Process Physics and Modeling in Semiconductor Technology, pp. 298, 1996
Abstract

Transmission Electron Microscopy Sample Preparation and Analysis of Semiconductor Devices
LM Gignac, B Cunningham, LF Palmer, JA Miller
MICROSTRUCTURAL SCIENCE23, 285--290, 万方数据资源系统, 1996

FILM CRYSTALLOGRAPHIC TEXTURE AND SUBSTRATE SURFACE ROUGHNESS IN LAYERED ALUMINUM METALLIZATION
K P R V SVILAN, LM GIGNAC, PW DEHAVEN, RJ MURPHY, TJ LICATA
Materials reliability in microelectronics VI: symposium held April 8-12, 1996, San Francisco, California, USA, pp. 261


1995

Porous SiO sub 2 films analyzed by transmission electron microscopy
LM Gignac, TM Parrill, GV Chandrashekhar
Thin Solid Films(Switzerland) 261(1), 59--63, 1995

Electron microscopy applications to semiconductor devices
B Cunningham, TW Joseph, L Gignac, A Domenicucci
CONFERENCE SERIES-INSTITUTE OF PHYSICS, pp. 565--574, 1995


1992

EBIC and TEM Analyses of Piped Multi-Emitter Transistors
JD Schick, LM Gignac
INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, pp. 55--55, 1992


1991

Reluctant etchability of dielectric Al 2 O 3 films sputtered in water vapor and Ar O 2 environments
Gignac, Lynne M and Risbud, Subhash H
Thin solid films 202(1), 83--89, Elsevier, 1991
Abstract



1989



Microanalyses of chemically etched thin film alumina-ferrite interfaces
L M Gignac, S H Risbud
Journal of Materials Science 24(4), 1169--1176, Springer, 1989


1988

Tem Analysis of Interfacial Phases in Alumina-Ferrite Systems
Gignac, Lynne M and Risbud, Subhash H
MRS Proceedings, pp. 39, 1988

Processing and characterization of RF sputtered alumina thin films.
Gignac, Lynne Marie
1988 - arizona.openrepository.com, The University of Arizona.
Abstract

Processing and characterization of RF sputtered alumina thin films
L M Gignac
Ph.D. Thesis, 1988


1985

The effect of processing on the water content and properties of an alkali-borosilicate glass frit
L M Gignac
1985 - University of Illinois at Urbana- ...
Masters Thesis

A NUCLEAR REACTION ANALYSIS TECHNIQUE TO DETERMINE THE PENETRATION OF HYDROGENIC SPECIES INTO GLASSES EXPOSED TO LEACHING SOLUTIONS
LM GIGNAC, CJ ALTSTETTER, SD BROWN
Scientific basis for nuclear waste management VIII: symposium held November 26-29, 1984, Boston, Massachusetts, USA, pp. 107, 1985


1908

SYMPOSIUM G
P Metal, M T Films, L M Gignac, O Thomas, J M MacLaren, B Clemens
SCANNING4, 15, 1908


Year Unknown

Polycrystalline metal and magnetic thin films- 2000(San Francisco CA, 25-27 April 2000)
B M Clemens, L Gignac, J M MacLaren, O Thomas
Materials Research Society symposia proceedings, 0

SURFACE ROUGHNESS IN LAYERED ALUMINUM METALLIZATION
KP RODBELL, V SVILAN, LM GIGNAC, PW DEHAVEN
mrs.org, 0

VOLTAGE SWEEP
SA Cohen, J Liu, L Gignac, T Ivers, D Armbrust, KP Rodbell, SM Gates
mrs.org, 0

27.6 Systematic Study of Workfunction Engineering and Scavenging Effect Using NiSi Alloy FUSI Metal Gates with Advanced Gate Stacks
YH Kim, C Cabral, EP Gousev, R Carruthers, L Gignac, M Gribelyuk, E Cartier, S Zarfar, M Copel, V Narayanan
INTERNATIONAL ELECTRON DEVICES MEETING, pp. 657, 0

DURING ANNEALING
LM GIGNAC, V SVILAN, C C LA CLEVENGER JR, C LAVOIE
mrs.org, 0

Does line-edge roughness matter?: FEOL and BEOL perspectives (Proceedings Paper)
Q Lin, C T Black, C Detavernier, L Gignac, K Guarini, B Herbst, H Kim, P Oldiges, K E Petrillo, M I Sanchez
spie.org, 0