Injo Ok  Injo Ok photo       

contact information

BEOL Integration
Albany, New York
  +1dash518dash292dash7476

links



2008

Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In 0.53 Ga 0.47 As and InP using physical vapor deposition HfO 2 and silicon interface passivation layer
Ok, InJo and Kim, H and Zhang, M and Zhu, F and Park, S and Yum, J and Zhao, H and Garcia, Domingo and Majhi, Prashant and Goel, N and others
Applied Physics Letters 92(20), 202903, AIP, 2008
Abstract

Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12 {\AA} using stacked Hf Al O x/ Hf O 2 gate dielectric
Zhao, Han and Shahrjerdi, Davood and Zhu, Feng and Kim, Hyoung-Sub and Ok, Injo and Zhang, Manghong and Yum, Jung Hwan and Banerjee, Sanjay K and Lee, Jack C
Applied Physics Letters 92(25), 253506, AIP, 2008
Abstract


2007

Gate oxide scaling down in Hf O 2--Ga As metal-oxide-semiconductor capacitor using germanium interfacial passivation layer
Kim, Hyoung-Sub and Ok, Injo and Zhang, Manhong and Zhu, F and Park, S and Yum, J and Zhao, Han and Lee, Jack C
Applied Physics Letters 91(4), 042904, AIP, 2007
Abstract


2006

Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer
Koveshnikov, S and Tsai, W and Ok, I and Lee, JC and Torkanov, V and Yakimov, M and Oktyabrsky, S
Applied Physics Letters 88(2), 022106, AIP, 2006
Abstract

Ultrathin Hf O 2 (equivalent oxide thickness= 1.1 nm) metal-oxide-semiconductor capacitors on n-Ga As substrate with germanium passivation
Kim, Hyoung-Sub and Ok, Injo and Zhang, Manhong and Choi, Changhwan and Lee, Tackhwi and Zhu, Feng and Thareja, Gaurav and Yu, Lu and Lee, Jack C
Applied Physics Letters 88(25), 252906, AIP, 2006
Abstract

Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with Hf O 2 dielectric and germanium interfacial passivation layer
Kim, Hyoung-Sub and Ok, Injo and Zhang, Manhong and Lee, T and Zhu, F and Yu, L and Lee, Jack C and Koveshnikov, S and Tsai, W and Tokranov, V and others
Applied Physics Letters 89(22), 222904, AIP, 2006
Abstract

Metal gate-Hf O 2 metal-oxide-semiconductor capacitors on n-Ga As substrate with silicon/germanium interfacial passivation layers
Kim, Hyoung-Sub and Ok, Injo and Zhang, Manhong and Lee, Tackhwi and Zhu, Feng and Yu, Lu and Lee, Jack C
Applied physics letters 89(22), 222903, AIP, 2006
Abstract

Metal gate-HfO/sub 2/MOS structures on GaAs substrate with and without Si interlayer
Ok, InJo and Kim, Hyoung-sub and Zhang, Manhong and Kang, Chang-Yong and Rhee, Se Jong and Choi, Changhwan and Krishnan, Siddarth A and Lee, Tackhwi and Zhu, Feng and Thareja, Gaurav and others
IEEE electron device letters 27(3), 145--147, IEEE, 2006
Abstract


2005

Aggressively scaled ultra thin undoped HfO/sub 2/gate dielectric (EOT< 0.7 nm) with TaN gate electrode using engineered interface layer
Choi, Changhwan and Kang, Chang-Yong and Rhee, Se Jong and Akbar, Mohammad Shahariar and Krishnan, Siddarth A and Zhang, Manhong and Kim, Hyoung-Sub and Lee, Tackhwi and Ok, Injo and Zhu, Feng and others
IEEE electron device letters 26(7), 454--457, IEEE, 2005
Abstract