Michael A Guillorn  Michael A Guillorn photo       

contact information

Lithography and Technology Research
Thomas J. Watson Research Center, Yorktown Heights, NY USA
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2016

DSA patterning options for FinFET formation at 7nm node
Liu, Chi-Chun C and Franke, Elliott and Lie, Fee Li and Sieg, Stuart and Tsai, Hsinyu and Lai, Kafai and Truong, Hoa and Farrell, Richard and Somervell, Mark and Sanders, Daniel and others
SPIE Advanced Lithography, pp. 97770R--97770R, 2016
Abstract

Advanced in-line optical metrology of sub-10nm structures for gate all around devices (GAA)
Muthinti, Raja and Loubet, Nicolas and Chao, Robin and Ott, John and Guillorn, Michael and Felix, Nelson and Gaudiello, John and Lund, Parker and Cepler, Aron and Sendelbach, Matthew and others
SPIE Advanced Lithography, pp. 977810--977810, 2016
Abstract

High chi block copolymer DSA to improve pattern quality for FinFET device fabrication
Tsai, Hsinyu and Miyazoe, Hiroyuki and Vora, Ankit and Magbitang, Teddie and Arellano, Noel and Liu, Chi-Chun and Maher, Michael J and Durand, William J and Dawes, Simon J and Bucchignano, James J and others
SPIE Advanced Lithography, pp. 977910--977910, 2016
Abstract


2015

Fin formation using graphoepitaxy DSA for FinFET device fabrication
Liu, Chi-Chun and Lie, Fee Li and Rastogi, Vinayak and Franke, Elliott and Mohanty, Nihar and Farrell, Richard and Tsai, Hsinyu and Lai, Kafai and Ozlem, Melih and Cho, Wooyong and others
SPIE Advanced Lithography, pp. 94230S--94230S, 2015
Abstract

Customization and design of directed self-assembly using hybrid prepatterns
Cheng, Joy and Doerk, Gregory S and Rettner, Charles T and Singh, Gurpreet and Tjio, Melia and Truong, Hoa and Arellano, Noel and Balakrishnan, Srinivasan and Brink, Markus and Tsai, Hsinyu and others
SPIE Advanced Lithography, pp. 942307--942307, 2015
Abstract

Resistivity of copper interconnects beyond the 7 nm node
Pyzyna, A and Bruce, R and Lofaro, M and Tsai, H and Witt, C and Gignac, L and Brink, M and Guillorn, M and Fritz, G and Miyazoe, H and others
VLSI Technology (VLSI Technology), 2015 Symposium on, pp. T120--T121
Abstract

Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance
Lauer, Isaac and Loubet, N and Kim, SD and Ott, JA and Mignot, S and Venigalla, R and Yamashita, T and Standaert, T and Faltermeier, J and Basker, V and others
VLSI Technology (VLSI Technology), 2015 Symposium on, pp. T140--T141
Abstract

Performance trade-offs in FinFET and gate-all-around device architectures for 7nm-node and beyond
Kim, Seong-Dong and Guillorn, Michael and Lauer, Isaac and Oldiges, Phil and Hook, Terence and Na, Myung-Hee
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE, pp. 1--3
Abstract

Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch
Tsai, HsinYu and Miyazoe, Hiroyuki and Cheng, Joy and Brink, Markus and Dawes, Simon and Klaus, David and Bucchignano, James and Sanders, Daniel and Joseph, Eric and Colburn, Matthew and others
SPIE Advanced Lithography, pp. 942314--942314, 2015
Abstract


2014

Contamination mitigation of hydrogen silsesquioxane resist processed with Na+-containing developer for nanoscale CMOS device patterning
Brink, Markus and Lauer, Isaac and Engelmann, Sebastian U and Majumdar, Amlan and Cohen, Stephan A and Kratschmer, Ernst and Guillorn, Michael A
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32(2), 022204, AVS, 2014
Abstract

Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
Tsai, Hsinyu and Miyazoe, Hiroyuki and Chang, Josephine B and Pitera, Jed and Liu, Chi-Chun and Brink, Markus and Lauer, Isaac and Cheng, Joy Y and Engelmann, Sebastian and Rozen, John and others
Electron Devices Meeting (IEDM), 2014 IEEE International, pp. 32--1
Abstract

Towards electrical testable SOI devices using Directed Self-Assembly for fin formation
Liu, Chi-Chun and Estrada-Raygoza, Cristina and He, Hong and Cicoria, Michael and Rastogi, Vinayak and Mohanty, Nihar and Tsai, Hsinyu and Schepis, Anthony and Lai, Kafai and Chao, Robin and others
SPIE Advanced Lithography, pp. 904909--904909, 2014
Abstract

Dopant-Segregation Technique for Leakage Reduction and Performance Improvement in Trigate Transistors Without Raised Source/Drain Epitaxy
F Liu, Z Zhang, MH Khater, Y Zhu, SO Koswatta, J Chang, J Gonsalves, W Price, SU Engelmann, MA Guillorn
Electron Device Letters, IEEE , 2014

Toward electrical testable SOI devices using DSA for fin formation
Chi-Chun Liu, Cristina Estrada-Raygoza, Hong He, Michael Cicoria, Vinayak Rastogi, Nihar Mohanty, Hsinyu Tsai, Anthony Schepis, Kafai Lai, Robin Chao, others
SPIE Advanced Lithography, pp. 904909--904909, 2014

Fabrication of sub-20 nm nanopore arrays in membranes with embedded metal electrodes at wafer scales
J. Bai, D. Wang, S. W. Nam, H. Peng, R. Bruce, L. Gignac, M. Brink, E. Kratschmer, S. Rossnagel, P. Waggoner, K. Reuter, C. Wang, Y. Astier, V. Balagurusamy, B. Luan, Y. Kwark, E. Joseph, M. Guillorn, S. Polonsky, A. Royyuru, S. Papa Rao, G. Stolovitzky
Nanoscale 6(15), 8900--8906, 2014

Computational lithography platform for 193i-guided directed self-assembly
Kafai Lai, Melih Ozlem, Jed W Pitera, Chi-chun Liu, Anthony Schepis, Daniel Dechene, Azalia Krasnoperova, Daniel Brue, Jassem Abdallah, Hsinyu Tsai, others
SPIE Advanced Lithography, pp. 90521A--90521A, 2014



2013

200 mm wafer-scale integration of sub-20 nm sacrificial nanofluidic channels for manipulating and imaging single DNA molecules
Wang, Chao and Nam, SW and Cotte, John M and Peng, H and Jahnes, CV and Wang, D and Bruce, R and Guillorn, M and Gignac, LM and Advocate, WH and others
Electron Devices Meeting (IEDM), 2013 IEEE International, pp. 14--1
Abstract

Computational aspects of optical lithography extension by directed self-assembly
Lai, Kafai and Liu, Chi-chun and Pitera, Jed and Dechene, Daniel J and Schepis, Anthony and Abdallah, Jassem and Tsai, Hsinyu and Guillorn, Mike and Cheng, Joy and Doerk, Gregory and others
SPIE Advanced Lithography, pp. 868304--868304, 2013
Abstract

Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond
Bangsaruntip, S and Balakrishnan, K and Cheng, S-L and Chang, J and Brink, M and Lauer, I and Bruce, RL and Engelmann, SU and Pyzyna, A and Cohen, GM and others
Electron Devices Meeting (IEDM), 2013 IEEE International, pp. 20--2
Abstract

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node
Z Zhang, SO Koswatta, SW Bedell, A Baraskar, M Guillorn, SU Engelmann, Y Zhu, J Gonsalves, A Pyzyna, M Hopstaken, C Witt, L Yang, F Liu, J Newbury, W Song, C Cabral, M Lofaro, AS Ozcan, M Raymond, C Lavoie, JW Sleight, KP Rodbell, PM Solomon
Electron Device Letters, IEEE , 2013

Subtractive W contact and local interconnect co-integration (CLIC)
F Liu, B Fletcher, EA Joseph, Y Zhu, J Gonsalves, W Price, GM Fritz, SU Engelmann, A Pyzyna, Z Zhang, C Cabral, MA Guillorn
Interconnect Technology Conference (IITC), 2013

Dot-matrix marks for dynamic overlay measurements in electron beam lithography
Ernst Kratschmer, James J Bucchignano, David P Klaus, Michael A Guillorn
Journal of Vacuum Science \& Technology B 31(6), 06F405, AVS: Science \& Technology of Materials, Interfaces, and Processing, 2013

A comparative study of fin-last and fin-first SOI FinFETs
Darsen Lu, Josephine Chang, Michael A Guillorn, Chung-Hsun Lin, Jeffrey Johnson, Philip Oldiges, Ken Rim, Mukesh Khare, Wilfried Haensch
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on, pp. 147--150

Directed self-assembly process implementation in a 300mm pilot line environment
Chi-Chun Liu, I Cristina Estrada-Raygoza, Jassem Abdallah, Steven Holmes, Yunpeng Yin, Anthony Schepis, Michael Cicoria, David Hetzer, Hsinyu Tsai, Michael Guillorn, others
SPIE Advanced Lithography, pp. 86801G--86801G, 2013

Pattern transfer of directed self-assembly patterns for CMOS device applications
H Tsai, H Miyazoe, S Engelmann, CC Liu, L Gignac, J Bucchignano, D Klaus, C Breslin, E Joseph, J Cheng, D Sanders, M Guillorn
J. Micro/Nanolith. MEMS MOEMS., 2013

Computational Aspects of Optical Lithography Extension by Directed Self-Assembly‖
Kafai Lai, Chi-chun Liu, Jed Pitera, Daniel J Dechene, Anthony Schepis, Jassem Abdallah, Hsinyu Tsai, Mike Guillorn, Joy Cheng, Gregory Doerk, others
Proc. SPIE, pp. 868304, 2013

IBM TJ Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598
C Wang, SW Nam, JM Cotte, H Peng, CV Jahnes, D Wang, R Bruce, M Guillorn, LM Gignac, WH Advocate, others
Electron Devices Meeting (IEDM), 2013 IEEE International, pp. 14--1


2012

Patterning of CMOS Device Structures for 40-80nm Pitches and Beyond
S. U. Engelmann, R. Martin, R. L. Bruce, H. Miyazoe, N. C. M. Fuller, W. S. Graham, E. M. Sikorski, M. Glodde, M. Brink, H. Tsai, J. Bucchignano, D. Klaus, E. Kratschmer, M. A. Guillorn, Y Zhang, G Oehrlein, Q Lin
Advanced Etch Technology For Nanopatterning8328, 2012

Statistical measurement of random telegraph noise and its impact in scaled-down high-$\kappa$/metal-gate MOSFETs
H Miki, N Tega, M Yamaoka, DJ Frank, A Bansal, M Kobayashi, K Cheng, CP D'Emic, Z Ren, S Wu, others
Electron Devices Meeting (IEDM), 2012 IEEE International, pp. 19--1

Pattern collapse mitigation strategies for EUV lithography
Dario L. Goldfarb, Robert L. Bruce, Jim J. Bucchignano, David P. Klaus, Michael A. Guillorn, Chunghsi J. Wu, PP Naulleau, OR Wood
Extreme Ultraviolet (Euv) Lithography Iii8322, 2012

Room-temperature carrier transport in high-performance short-channel Silicon nanowire MOSFETs
Amlan Majumdar, Sarunya Bangsaruntip, Guy M Cohen, Lynne M Gignac, Michael Guillorn, Martin M Frank, Jeffrey W Sleight, Dimitri A Antoniadis
Electron Devices Meeting (IEDM), 2012 IEEE International, pp. 8--3



2011

Impact of HK/MG stacks and future device scaling on RTN
Naoki Tega, Hiroshi Miki, Zhibin Ren, Christoper P D'Emic, Yu Zhu, David J Frank, Michael A Guillorn, Dae-Gyu Park, Wilfried Haensch, Kazuyoshi Torii
Reliability Physics Symposium (IRPS), 2011 IEEE International, pp. 6A--5

Understanding short-term BTI behavior through comprehensive observation of gate-voltage dependence of RTN in highly scaled high-$\kappa$/metal-gate pFETs
H Miki, M Yamaoka, N Tega, Z Ren, M Kobayashi, CP D'Emic, Y Zhu, DJ Frank, MA Guillorn, D-G Park, others
VLSI Technology (VLSIT), 2011 Symposium on, pp. 148--149

Systematic studies on reactive ion etch-induced deformations of organic underlayers
M Glodde, S Engelmann, M Guillorn, S Kanakasabapathy, E Mclellan, CS Koay, Y Yin, M Sankarapandian, JC Arnold, K Petrillo, M Brink, H Miyazoe, E Anuja de Silva, H Yusuff, K Yoon, Y Wei, C Wu, P Rao Varasani
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 2011

Scaling of SOI FinFETs down to Fin Width of 4 nm for the 10nm technology node
JB Chang, M. Guillorn, PM Solomon, CH Lin, SU Engelmann, A. Pyzyna, JA Ott, WE Haensch
VLSI Technology (VLSIT), 2011 Symposium on, pp. 12--13

Modeling of width-quantization-induced variation in logic FinFETs for 22nm and beyond
C.H. Lin, W. Haensch, P. Oldiges, H. Wang, R. Williams, J. Chang, M. Guillorn, A. Bryant, T. Yamashita, T. Standaert, others
VLSI Symp, pp. 16--17, 2011

A 0.021 $\mu$m 2 trigate SRAM cell with aggressively scaled gate and contact pitch
MA Guillorn, J Chang, A Pyzyna, S Engelmann, M Glodde, E Joseph, R Bruce, JA Ott, A Majumdar, F Liu, others
VLSI Technology (VLSIT), 2011 Symposium on, pp. 64--65


2010

Non-planar device architecture for 15nm node: FinFET or trigate?
C.H. Lin, J. Chang, M. Guillorn, A. Bryant, P. Oldiges, W. Haensch
SOI Conference (SOI), 2010 IEEE International, pp. 1--2

Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm
S Bangsaruntip, A Majumdar, GM Cohen, SU Engelmann, Y Zhang, M Guillorn, LM Gignac, S Mittal, WS Graham, EA Joseph, DP Klaus, J Chang, EA Cartier, JW Sleight
VLSI Technology (VLSIT), 2010 Symposium on

Gate-all-around silicon nanowire MOSFETs and circuits
JW Sleight, S Bangsaruntip, A Majumdar, GM Cohen, Y Zhang, SU Engelmann, NCM Fuller, LM Gignac, S Mittal, JS Newbury, others
Device Research Conference (DRC), 2010, pp. 269--272

FDSOI CMOS with dielectrically-isolated back gates and 30nm L< inf> G high-$\gamma$/metal gate
M Khater, J Cai, RH Dennard, J Yau, C Wang, L Shi, M Guillorn, J Ott, Q Ouyang, W Haensch
VLSI Technology (VLSIT), 2010 Symposium on, pp. 43--44


2009

Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping
M Guillorn, J Chang, N Fuller, J Patel, M Darnon, A Pyzyna, E Joseph, S Engelmann, J Ott, J Newbury, others
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures27, 2588, 2009

High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling
S. Bangsaruntip, G. M. Cohen, A. Majumdar, Y. Zhang, S. U. Engelmann, N. C. M. Fuller, L. M. Gignac, S. Mittal, J. S. Newbury, M. Guillorn, T. Barwicz, L. Sekaric, M. M. Frank, and J. W. Sleight
IEDM Technical Digest, pp. 297-300, 2009


2008

Demonstration of highly scaled FinFET SRAM cells with high-$\kappa$/metal gate and investigation of characteristic variability for the 32 nm node and beyond
H Kawasaki, M Khater, M Guillorn, N Fuller, J Chang, S Kanakasabapathy, L Chang, R Muralidhar, K Babich, Q Yang, others
Electron Devices Meeting, 2008. IEDM 2008. IEEE International, pp. 1--4

Demonstration of highly scaled FinFET SRAM cells with high-k/metal gate and investigation of characteristic variability for the 32 nm node and beyond
H Kawasaki, M Khater, M Guillorn, N Fuller, J Chang, S Kanakasabapathy, L Chang, R Muralidhar, K Babich, Q Yang, others
IEEE International Electron Devices Meeting, 2008, pp. 1--4

FinFET performance advantage at 22nm: An AC perspective
M Guillorn, J Chang, A Bryant, N Fuller, O Dokumaci, X Wang, J Newbury, K Babich, J Ott, B Haran, others
VLSI Technology, 2008 Symposium on, pp. 12--13


2006

In situ electric-field-induced contrast imaging of electronic transport pathways in nanotube-polymer composites
S Jesse, M A Guillorn, I N Ivanov, A A Puretzky, J Y Howe, P F Britt, D B Geohegan
Applied Physics Letters89, 013114, 2006


2005

A microfabrication process for a vacuum-encapsulated microchamber
S J Randolph, M D Hale, M A Guillorn, P D Rack, M L Simpson
Microelectronic Engineering 77(3-4), 412--419, Elsevier, 2005

Vertically aligned carbon nanofibers and related structures: Controlled synthesis and directed assembly
AV Melechko, VI Merkulov, TE McKnight, MA Guillorn, KL Klein, DH Lowndes, ML Simpson
Journal of Applied Physics97, 041301, 2005


2004

Scanning probe microscopy imaging of frequency dependent electrical transport through carbon nanotube networks in polymers
SV Kalinin, S Jesse, J Shin, AP Baddorf, MA Guillorn, DB Geohegan
Nanotechnology 15(8), 907--912, 2004

Microarrays of vertically-aligned carbon nanofiber electrodes in an open fluidic channel
T E McKnight, A V Melechko, D W Austin, T Sims, M A Guillorn, M L Simpson, others
J. Phys. Chem. B 108(22), 7115--7125, 2004

Vertically aligned carbon nanofiber-based field emission electron sources with an integrated focusing electrode
MA Guillorn, X Yang, AV Melechko, DK Hensley, MD Hale, VI Merkulov, ML Simpson, LR Baylor, WL Gardner, DH Lowndes
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures22, 35, 2004

Four-probe charge transport measurements on individual vertically aligned carbon nanofibers
L Zhang, D Austin, V I Merkulov, A V Meleshko, K L Klein, M A Guillorn, D H Lowndes, M L Simpson
Applied Physics Letters84, 3972, 2004


2003

Effects of microfabrication processing on the electrochemistry of carbon nanofiber electrodes
T E McKnight, A V Melechko, M A Guillorn, V I Merkulov, M J Doktycz, C T Culbertson, S C Jacobson, D H Lowndes, M L Simpson, others
J. Phys. Chem. B 107(39), 10722--10728, 2003

Integrally gated carbon nanotube field emission cathodes produced by standard microfabrication techniques
MA Guillorn, MD Hale, VI Merkulov, ML Simpson, GY Eres, H Cui, AA Puretzky, DB Geohegan
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures21, 957, 2003

Vertically aligned carbon nanofibers as sacrificial templates for nanofluidic structures
AV Melechko, TE McKnight, MA Guillorn, VI Merkulov, B Ilic, MJ Doktycz, DH Lowndes, ML Simpson
Applied Physics Letters82, 976, 2003

Growth of vertically aligned carbon nanofibers by low-pressure inductively coupled plasma-enhanced chemical vapor deposition
JBO Caughman, LR Baylor, MA Guillorn, VI Merkulov, DH Lowndes, LF Allard
Applied Physics Letters83, 1207, 2003

Large-scale synthesis of arrays of high-aspect-ratio rigid vertically aligned carbon nanofibres
AV Melechko, TE McKnight, DK Hensley, MA Guillorn, AY Borisevich, VI Merkulov, DH Lowndes, ML Simpson
Nanotechnology14, 1029--1035, Institute of Physics Publishing, 2003

Fabrication and characterization of carbon nanofiber-based vertically integrated Schottky barrier junction diodes
X Yang, M A Guillorn, D Austin, A V Melechko, H Cui, H M Meyer III, V I Merkulov, JBO Caughman, D H Lowndes, M L Simpson
Nano Letters 3(12), 1751--1755, 2003

Intracellular integration of synthetic nanostructures with viable cells for controlled biochemical manipulation
T E McKnight, A V Melechko, G D Griffin, M A Guillorn, V I Merkulov, F Serna, D K Hensley, M J Doktycz, D H Lowndes, M L Simpson
Nanotechnology14, 551--556, Institute of Physics Publishing, 2003


2002

Self-aligned gated field emission devices using single carbon nanofiber cathodes
MA Guillorn, AV Melechko, VI Merkulov, DK Hensley, ML Simpson, DH Lowndes
Applied Physics Letters81, 3660, 2002

Nanopipe fabrication using vertically aligned carbon nanofiber templates
AV Melechko, TE McKnight, MA Guillorn, DW Austin, B Ilic, VI Merkulov, MJ Doktycz, DH Lowndes, ML Simpson
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures20, 2730, 2002

Time-resolved diagnostics of single wall carbon nanotube synthesis by laser vaporization
A A Puretzky, D B Geohegan, H Schittenhelm, X Fan, M A Guillorn
Applied Surface Science197, 552--562, Elsevier, 2002

Operation of individual integrally gated carbon nanotube field emitter cells
MA Guillorn, MD Hale, VI Merkulov, ML Simpson, GY Eres, H Cui, AA Puretzky, DB Geohegan
Applied Physics Letters81, 2860, 2002

Growth rate of plasma-synthesized vertically aligned carbon nanofibers
V I Merkulov, AV Melechko, MA Guillorn, DH Lowndes, ML Simpson
Chemical Physics Letters 361(5-6), 492--498, Elsevier, 2002

Field emission from isolated individual vertically aligned carbon nanocones
LR Baylor, VI Merkulov, ED Ellis, MA Guillorn, DH Lowndes, AV Melechko, ML Simpson, JH Whealton
Journal of Applied Physics91, 4602, 2002

Controlled transport of latex beads through vertically aligned carbon nanofiber membranes
L Zhang, AV Melechko, VI Merkulov, MA Guillorn, ML Simpson, DH Lowndes, MJ Doktycz
Applied Physics Letters81, 135, 2002

Individually addressable vertically aligned carbon nanofiber-based electrochemical probes
MA Guillorn, TE McKnight, A Melechko, VI Merkulov, PF Britt, DW Austin, DH Lowndes, ML Simpson
Journal of Applied Physics91, 3824, 2002

Digital electrostatic electron-beam array lithography
LR Baylor, DH Lowndes, ML Simpson, CE Thomas, MA Guillorn, VI Merkulov, JH Whealton, ED Ellis, DK Hensley, AV Melechko
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures20, 2646, 2002

Control mechanisms for the growth of isolated vertically aligned carbon nanofibers
V I Merkulov, DK Hensley, AV Melechko, MA Guillorn, DH Lowndes, ML Simpson, others
J. Phys. Chem. B 106(41), 10570--10577, 2002

The electrodeposition of metal at metal/carbon nanotube junctions
D W Austin, A A Puretzky, D B Geohegan, P F Britt, M A Guillorn, M L Simpson
Chemical Physics Letters 361(5-6), 525--529, Elsevier, 2002


Controlled alignment of carbon nanofibers in a large-scale synthesis process
V I Merkulov, AV Melechko, MA Guillorn, ML Simpson, DH Lowndes, JH Whealton, RJ Raridon
Applied Physics Letters80, 4816, 2002

Transition betweenbase'andtip'carbon nanofiber growth modes
A V Melechko, V I Merkulov, D H Lowndes, M A Guillorn, M L Simpson
Chemical Physics Letters 356(5-6), 527--533, Elsevier, 2002


2001

Fabrication of gated cathode structures using an in situ grown vertically aligned carbon nanofiber as a field emission element
MA Guillorn, ML Simpson, GJ Bordonaro, VI Merkulov, LR Baylor, DH Lowndes
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures19, 573, 2001

Condensed phase growth of single-wall carbon nanotubes from laser annealed nanoparticulates
DB Geohegan, H Schittenhelm, X Fan, SJ Pennycook, AA Puretzky, MA Guillorn, DA Blom, DC Joy
Applied Physics Letters78, 3307, 2001

Microfabricated field emission devices using carbon nanofibers as cathode elements
MA Guillorn, AV Melechko, VI Merkulov, ED Ellis, ML Simpson, DH Lowndes, LR Baylor, GJ Bordonaro
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures19, 2598, 2001

An integrated CMOS microluminometer for low-level luminescence sensing in the bioluminescent bioreporter integrated circuit
M L Simpson, G S Sayler, G Patterson, D E Nivens, E K Bolton, J M Rochelle, J C Arnott, B M Applegate, S Ripp, M A Guillorn
Sensors \& Actuators: B. Chemical 72(2), 134--140, Elsevier, 2001

Operation of a gated field emitter using an individual carbon nanofiber cathode
MA Guillorn, AV Melechko, VI Merkulov, ED Ellis, CL Britton, ML Simpson, DH Lowndes, LR Baylor
Applied Physics Letters79, 3506, 2001

Sharpening of carbon nanocone tips during plasma-enhanced chemical vapor growth
V I Merkulov, A V Melechko, M A Guillorn, D H Lowndes, M L Simpson
Chemical Physics Letters 350(5-6), 381--385, Elsevier, 2001

Alignment mechanism of carbon nanofibers produced by plasma-enhanced chemical-vapor deposition
V I Merkulov, A V Melechko, M A Guillorn, D H Lowndes, M L Simpson
Applied Physics Letters79, 2970, 2001

Shaping carbon nanostructures by controlling the synthesis process
V I Merkulov, M A Guillorn, D H Lowndes, M L Simpson, E Voelkl
Applied Physics Letters79, 1178, 2001


2000

Fabrication of dissimilar metal electrodes with nanometer interelectrode distance for molecular electronic device characterization
M A Guillorn, D W Carr, R C Tiberio, E Greenbaum, M L Simpson
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures18, 1177, 2000


Year Unknown

Hysteretic Drain-Current Behavior Due To Random Telegraph Noise in Scaled-down FETs with High-$\kappa$/Metal-gate Stacks
H Miki, N Tega, Z Ren, C P D’Emic, Y Zhu, D J Frank, M A Guillorn, D G Park, W Haensch, K Torii
H Miki, N Tega, Z Ren, CP D'Emic, Y Zhu..., 0