Miaomiao Wang  Miaomiao Wang photo       

contact information

Characterization and Reliability
Albany Nanotech
  +1dash518dash292dash7291

links



2017

Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs
Parihar, Narendra and Southwick, Richard G and Sharma, Uma and Wang, Miaomiao and Stathis, James H and Mahapatra, Souvik
Reliability Physics Symposium (IRPS), 2017 IEEE International, pp. 2D--4
Abstract


2016

Hot carrier effect in ultra-scaled replacement metal gate Si ix Ge x channel p-FinFETs
Wang, Miaomiao and Miao, Xin and Stathis, James H and Southwick, Richard and Linder, Barry P and Liu, Derrick and Bao, Ruqiang and Watanabe, Koji
Electron Devices Meeting (IEDM), 2016 IEEE International, pp. 15--4
Abstract

Technology viable DC performance elements for Si/SiGe channel CMOS FinFET
Gen Tsutsui, Ruqiang Bao, Kwan-yong Lim, Robert R Robison, Reinaldo A Vega, Jie Yang, Zuoguang Liu, et al
Electron Devices Meeting (IEDM), 2016 IEEE International, pp. 17.4. 1-17.4. 4, IEEE


2015

Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET
Wang, Miaomiao and Liu, Zuoguang and Yamashita, Tenko and Stathis, James H and Chen, Chia-yu
Reliability Physics Symposium (IRPS), 2015 IEEE International, pp. 4A--5
Abstract

Separation of Interface States and Electron Trapping for Hot Carrier Degradation in Ultra-Scaled Replacement Metal Gate n-FinFETs
Miaomiao Wang, James H Stathis, Chia-yu Chen, Zuoguang Liu, Tenko Yamashita,
2015 IEEE International Reliability Physics Symposium (IRPS)


2013



2010


PBTI relaxation dynamics after AC vs. DC stress in high-k/metal gate stacks
K Zhao, JH Stathis, A Kerber, E Cartier
Reliability Physics Symposium (IRPS), 2010 IEEE International, pp. 50--54

Copper Contact for 22 nm and Beyond: Device Performance and Reliability Evaluation
S C Seo, C C Yang, M Wang, F Monsieur, L Adam, J B Johnson, D Horak, S Fan, K Cheng, J Stathis, others
Electron Device Letters, IEEE 31(12), 1452--1454, IEEE, 2010


HOT-carrier degradation in undoped-body ETSOI FETS and SOI FINFETS
M. Wang, P. Kulkarni, K. Cheng, A. Khakifirooz, VS Basker, H. Jagannathan, C.C. Yeh, V. Paruchuri, B. Doris, H. Bu, others
Reliability Physics Symposium (IRPS), 2010 IEEE International, pp. 1099--1104


2009

Recovery study of negative bias temperature instability
M Wang, S Zafar, J H Stathis
Microelectronic Engineering, Elsevier, 2009


2008

Electron tunneling spectroscopy of silicon metal-oxide-semiconductor system with various high-k gate dielectrics
Wang, Miaomiao
2008 - search.proquest.com, Yale University
Abstract


2007

Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates La Al O 3 and La Sc O 3
Wang, M and He, W and Ma, TP and Edge, LF and Schlom, DG
Applied physics letters 90(5), 053502, AIP, 2007
Abstract

Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO and LaScO
M Wang, W He, TP Ma, LF Edge, DG Schlom
Applied Physics Letters90, 053502, 2007


2006

INELASTIC ELECTRON TUNNELLING SPECTROSCOPY (IETS) STUDY OF HIGH-K DIELECTRICS
TP MA, WEI HE, M WANG
Defects in High-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices, 61, Springer, 2006


2005



Year Unknown

Inelastic Electron Tunnelling Spectroscopy (IETS) of High‐k Dielectrics

... and Metrology for ULSI Technology 2005, 2005 - scitation.aip.org

Special reliability features for Hf-based high-/spl kappa/gate dielectrics

... on Device and ..., 2005 - ieeexplore.ieee.org