Nicholas Fuller  Nicholas Fuller photo       

contact information

Senior Manager, Cognitive Service Foundations, IBM Master Inventor
Thomas J. Watson Research Center, Yorktown Heights, NY USA
  +1dash914dash945dash2660

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2014

MRONLINE: MapReduce online performance tuning
Min Li, Liangzhao Zeng, Shicong Meng, Jian Tan, Li Zhang, Ali R Butt, Nicholas Fuller
International symposium on High-performance Parallel and Distributed Computing (HPDC), pp. 165--176, 2014


2013

VMAR: Optimizing I/O Performance and Resource Utilization in the Cloud
Zhiming Shen, Zhe Zhang, Andrzej Kochut, Alexei Karve, Han Chen, Minkyong Kim Hui Lei, Nicholas Fuller
Proceedings of the 14th ACM/IFIP/USENIX International Conference on Middleware (Middleware '13, Research Track), , pp. 183--203, ACM/IFIP/USENIX, 2013

Highly selective silicon nitride etching to Si and SiO2 for a gate sidewall spacer using a CF3I/O2/H2 neutral beam
Daiki Nakayama, Akira Wada, Tomohiro Kubota, Robert Bruce, Ryan M Martin, Moritz Haass, Nicholas Fuller, Seiji Samukawa
Journal of Physics D: Applied Physics 46(20), 205203, IOP Publishing, 2013


2012

Integration of a Manufacturing Grade, k= 2.0 Spin-On Material in a Single Damascene Structure
Willi Volksen, Sampath Purushothaman, Maxime Darnon, Mike F Lofaro, Stephan A Cohen, James P Doyle, Nicholas Fuller, Teddie P Magbitang, Philip M Rice, Leslie E Krupp, others
ECS Journal of Solid State Science and Technology 1(5), N85--N90, The Electrochemical Society, 2012

Patterning of CMOS Device Structures for 40-80nm Pitches and Beyond
S. U. Engelmann, R. Martin, R. L. Bruce, H. Miyazoe, N. C. M. Fuller, W. S. Graham, E. M. Sikorski, M. Glodde, M. Brink, H. Tsai, J. Bucchignano, D. Klaus, E. Kratschmer, M. A. Guillorn, Y Zhang, G Oehrlein, Q Lin
Advanced Etch Technology For Nanopatterning8328, 2012


The effects of plasma exposure on low-k dielectric materials
J. L. Shohet; H. Ren; M. T. Nichols; H. Sinha; W. Lu; K. Mavrakakis; Q. Lin; N. M. Russell; M. Tomoyasu; G. A. Antonelli; S. U. Engelmann; N. C. Fuller; V. Ryan; Y. Nishi
Advanced Etch Technology for Nanopatterning, Ying Zhang, Editors, 83280I, pp. 83280I--83280I, SPIE, 2012

The effects of vacuum ultraviolet radiation on low-k dielectric films
H. Sinha, H. Ren, M. T. Nichols, J. L. Lauer, M. Tomoyasu, N. M. Russell, G. Jiang, G. A. Antonelli, N. C. Fuller, S. U. Engelmann, Q. Lin, V. Ryan, Y. Nishi, and J. L. Shohet
J. Appl. Phys. 112(11), 111101, AIP, 2012


2011

Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity
F. Weilnboeck, D. Metzler, N. Kumar, G. S. Oehrlein, R. L. Bruce, S. Engelmann, N. Fuller
Applied Physics Letters 99(26), 2011

Plasma Etch Challenges for Porous Low k Materials for 32nm and Beyond
Catherine Labelle, Ravi Srivastava, John C Arnold, Yunpeng Yin, Masao Ishikawa, Yann Mignot, Hakeem Yusuff, Joseph Linville, David Horak, Nicholas Fuller, others
ECS Transactions 34(1), 329--334, The Electrochemical Society, 2011

A 0.021 $\mu$m 2 trigate SRAM cell with aggressively scaled gate and contact pitch
MA Guillorn, J Chang, A Pyzyna, S Engelmann, M Glodde, E Joseph, R Bruce, JA Ott, A Majumdar, F Liu, others
VLSI Technology (VLSIT), 2011 Symposium on, pp. 64--65


2010

Multi-Level Integration of a Patternable Low-K Material in Advanced Cu BEOL
QINGHUANG LIN, ST CHEN, A NELSON, P BROCK, S COHEN, B DAVIS, N FULLER, R KAPLAN, R KWONG, E LINIGER, others
Proceedings of SPIE, the International Society for Optical Engineering, 2010

Development and characterization of advanced process technologies for the fabrication of crystalline-Si solar cells
Satyavolu S Papa Rao, Kate Fisher, Deborah Neumayer, Qiang Huang, Keith Kwietniak, Jun Liu, James Vichiconti, Jakub Nalaskowski, Joseph Newbury, Adam Pyzyna, others
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE, pp. 003559--003564

Patternable low-:material for  greener semiconductor manufacturing
Q Lin, ST Chen, A Nelson, P Brock, S Cohen, B Davis, N Fuller, J Gambino, R Kaplan, R Kwong, others
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on, pp. 975--978

High Performance and Highly Uniform Metal Hi-K Gate-All-Around Silicon Nanowire MOSFETs
JW Sleight, S Bangsaruntip, G Cohen, A Majumdar, Y Zhang, S Engelmann, N Fuller, L Gignac, S Mittal, J Newbury, T Barwicz, MM Frank, M Guillorn
ECS Trans., 2010

Multilevel integration of patternable low-$\kappa$ material into advanced Cu BEOL
Qinghuang Lin, Shyng-Tsong Chen, Alshakim Nelson, P Brock, S Cohen, B Davis, N Fuller, R Kaplan, R Kwong, E Liniger, others
SPIE Advanced Lithography, pp. 76390J--76390J, 2010

Reflectance and substrate currents of dielectric layers under vacuum ultraviolet irradiation
H Sinha, DB Straight, JL Lauer, NC Fuller, SU Engelmann, Y Zhang, GA Antonelli, M Severson, Y Nishi, JL Shohet
J. Vac. Sci. Technol. A 28, 2010

Gate-all-around silicon nanowire MOSFETs and circuits
JW Sleight, S Bangsaruntip, A Majumdar, GM Cohen, Y Zhang, SU Engelmann, NCM Fuller, LM Gignac, S Mittal, JS Newbury, MM Frank, J Chang, M Guillorn
Device Research Conference (DRC),, 2010

Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22nm node and beyond
H Kawasaki, VS Basker, T Yamashita, C H Lin, Y Zhu, J Faltermeier, S Schmitz, J Cummings, S Kanakasabapathy, H Adhikari, others
Electron Devices Meeting (IEDM), 2009 IEEE International, pp. 1--4, 2010

High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling
S Bangsaruntip, GM Cohen, A Majumdar, Y Zhang, SU Engelmann, N Fuller, LM Gignac, S Mittal, JS Newbury, M Guillorn, others
Electron Devices Meeting (IEDM), 2009 IEEE International, pp. 1--4, 2010

Measurement of the Indices of Refraction and Extinction Coefficients of Thin-Film Dielectric Materials in the VUV Range
DB Straight, JL Lauer, H Sinha, SU Engelmann, Y Zhang, NC Fuller, JL Shohet
Journal of Vacuum Science and Technology A, 2010


2009

Trigate 6T SRAM scaling to 0.06 $\mu$m 2
M Guillorna, J Chang, A Pyzyna, S Engelmann, E Joseph, B Fletcher, C Cabral Jr, CH Lin, A Bryant, M Darnon, others
Electron Devices Meeting (IEDM), 2009 IEEE International, pp. 1--3

Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping
M Guillorn, J Chang, N Fuller, J Patel, M Darnon, A Pyzyna, E Joseph, S Engelmann, J Ott, J Newbury, D Klaus, J Bucchignano, P Joshi, C Scerbo, E Kratschmer, W Graham, B To, J Parisi, Y Zhang, W Haensch
J. Vac. Sci. Technol. B 27, 2009

High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling
S. Bangsaruntip, G. M. Cohen, A. Majumdar, Y. Zhang, S. U. Engelmann, N. C. M. Fuller, L. M. Gignac, S. Mittal, J. S. Newbury, M. Guillorn, T. Barwicz, L. Sekaric, M. M. Frank, and J. W. Sleight
IEDM Technical Digest, pp. 297-300, 2009

Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping
M Guillorn, J Chang, N Fuller, J Patel, M Darnon, A Pyzyna, E Joseph, S Engelmann, J Ott, J Newbury, others
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures27, 2588, 2009

Demonstration of highly scaled FinFET SRAM cells with high-K/metal gate and investigation of characteristic variability for the 32 nm node and beyond
H Kawasaki, M Khater, M Guillorn, N Fuller, J Chang, S Kanakasabapathy, L Chang, R Muralidhar, K Babich, Q Yang, others
Electron Devices Meeting, 2008, pp. 1--4, 2009


2008

Plasma ash processing solutions for advanced interconnect technology
NCM Fuller, MA Worsley, L Tai, S Bent, C Labelle, J Arnold, T Dalton
Thin Solid Films 516(11), 3558--3563, Elsevier, 2008

Demonstration of highly scaled FinFET SRAM cells with high-$\kappa$/metal gate and investigation of characteristic variability for the 32 nm node and beyond
H Kawasaki, M Khater, M Guillorn, N Fuller, J Chang, S Kanakasabapathy, L Chang, R Muralidhar, K Babich, Q Yang, others
Electron Devices Meeting, 2008. IEDM 2008. IEEE International, pp. 1--4

Self-assembly based air-gap integration
Shom Ponoth, Dave Horak, Satya Nitta, Matthew Colburn, Greg Breyta, Elbert Huang, Jeanne Tania Sucharitaves, Howard Landis, Anthony Lisi, Xiao Liu, others
Meeting Abstracts, pp. 2074--2074, 2008

Plasma ash processing solutions for advanced interconnect technology
NCM Fuller, MA Worsley, L Tai, S Bent, C Labelle, J Arnold, T Dalton
Thin Solid Films 516(11), 3558--3563, Elsevier, 2008

Demonstration of highly scaled FinFET SRAM cells with high-k/metal gate and investigation of characteristic variability for the 32 nm node and beyond
H Kawasaki, M Khater, M Guillorn, N Fuller, J Chang, S Kanakasabapathy, L Chang, R Muralidhar, K Babich, Q Yang, others
IEEE International Electron Devices Meeting, 2008, pp. 1--4

Low-k spacers for advanced low power CMOS devices with reduced parasitic capacitances
E Huang, E Joseph, H Bu, X Wang, N Fuller, C Ouyang, E Simonyi, H Shobha, T Cheng, A Mallikarjunan, others
IEEE International SOI Conference, 2008, pp. 19--20

A Multilevel Copper/Low-k/Airgap BEOL Technology
S Nitta, S Ponoth, G Brezta, M Colburn, L Clevenger, D Horak, M Bhushan, J Casey, E Chan, S Cohen, others
Advanced Metallization Conference 2007(AMC 2007), 2008

FinFET performance advantage at 22nm: An AC perspective
M Guillorn, J Chang, A Bryant, N Fuller, O Dokumaci, X Wang, J Newbury, K Babich, J Ott, B Haran, others
VLSI Technology, 2008 Symposium on, pp. 12--13


2007

Effect of radical species density and ion bombardment during ashing of extreme ultralow-k interlevel dielectric materials
MA Worsley, SF Bent, NCM Fuller, TL Tai, J Doyle, M Rothwell, T Dalton
Journal of Applied Physics101, 013305, 2007


2006

Analysis of Plasma-Induced Modification of ULK and eULK Materials: Dual Damascene Processing Challenges for 45nm (K⩽ 2.4) and Beyond BEOL Technologies
NCM Fuller, MA Worsley, S Nitta, T Dalton, TL Tai, S Bent, T Magbitang, G Dubois, R Miller, W Volksen, others
Interconnect Technology Conference, 2006 International, pp. 24--26

BEOL Integration of Highly Damage-Resistant Porous Ultra Low-K Material Using Direct CMP and Via-first Process
T Iijima, Q Lin, S Chen, C Labelle, N Fuller, S Ponoth, S Cohen, J Lloyd, D Dunn, C Muzzy, others
Interconnect Technology Conference, 2006 International, pp. 21--23

BEOL Integration of Highly Damage-Resistant Porous Ultra Low-K Material Using Direct CMP and Via-first Process
T Iijima, Q Lin, S Chen, C Labelle, N Fuller, S Ponoth, S Cohen, J Lloyd, D Dunn, C Muzzy, others
Interconnect Technology Conference, 2006 International, pp. 21--23

Post Implant Strip Optimization for 90nm and Beyond Technologies
N C M Fuller, A Santiago, K Mello, C Yu, S Molis
Advanced Semiconductor Manufacturing Conference, 2006, pp. 289--291


A 45 nm CMOS node Cu/Low-k/Ultra Low-k PECVD SiCOH (k= 2.4) BEOL technology
S Sankaran, S Arai, R Augur, M Beck, G Biery, T Bolom, G Bonilla, O Bravo, K Chanda, M Chae, others
Electron Devices Meeting, 2006. IEDM'06. International, pp. 1--4


2005

Effect of plasma interactions with low-k films as a function of porosity, plasma chemistry, and temperature
M A Worsley, S F Bent, S M Gates, N C M Fuller, W Volksen, M Steen, T Dalton
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures23, 395, 2005

Integration of ALD-TaN Liners on Nanoporous Dielectrics
B K Moon, T Iijima, S Malhotra, A Simon, T Shaw, E T Ryan, C Labelle, N Fuller, T Bolom, D Dunn, others
Materials Research Society Symposium Proceedings, pp. 221, 2005

Nanoporous Materials Integration Into Advanced Microprocessors
E Todd Ryan, Cathy Labelle, Satya Nitta, Nicholas Fuller, Griselda Bonilla, Kenneth McCullough, Charles Taft, Hong Lin, Andrew Simon, Eva Simonyi, others
MRS Proceedings, pp. B2--1, 2005


2004

Aggressively scaled (0.143 sq micron 6T-SRAM cell for the 32 nm node and beyond
DM Fried, JM Hergenrother, AW Topol, L Chang, L Sekaric, JW SLEIGH, SJ McNab, J Newbury, SE Steen, G Gibson, others
International Electron Devices Meeting, pp. 261--264, 2004

Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing
TJ Dalton, N Fuller, C Tweedie, D Dunn, C Labelle, S Gates, M Colburn, ST Chen, T Lai, R Dellaguardia, others
Interconnect Technology Conference, 2004, pp. 154--156


2002

Optical plasma emission spectroscopy
VM Donnelly, MV Malyshev, M Schabel, A Kornblit, W Tai, IP Herman, NCM Fuller
Plasma Sources Science and Technology11, A26--A30, Institute of Physics Publishing, 2002

Electron temperatures of inductively coupled Cl2-Ar plasmas
N.C.M. Fuller, V.M. Donnelly and I.P. Herman
Journal of Vacuum Science and Technology A20(1), 170-172, 2002

Transition between two states of surface coverage and etch rate during Si etching in inductively coupled Cl2-Ar plasmas
N.C.M. Fuller, D.A. Telesca, V.M. Donnelly, and I.P. Herman
Applied Physics Letters 82(26), 4663-4665, 2002


2001

Optical actinometry of Cl2, Cl, Cl+, and Ar+ densities in inductively
N.C.M. Fuller, I.P. Herman and V.M. Donnelly
Journal of Applied Physics 90(7), 3182-3191, 2001


2000

Transient plasma-induced emission analysis of laser-desorbed species during Cl2 plasma etching of Si
Jae Young Choe, NCM Fuller, Vincent M Donnelly, Irving P Herman
Journal of Vacuum Science \& Technology A 18(6), 2669--2679, AVS: Science \& Technology of Materials, Interfaces, and Processing, 2000

Diagnostics of inductively coupled chlorine plasmas: Measurement of Cl2+ and Cl+ densities
MV Malyshev, NCM Fuller, KHA Bogart, VM Donnelly, I P Herman
Journal of Applied Physics88, 2246, 2000

Characterization of transformer coupled oxygen plasmas by trace rare gases-optical emission spectroscopy and Langmuir probe analysis
NCM Fuller, MV Malyshev, VM Donnelly, I P Herman
Plasma Sources Science and Technology9, 116--127, Institute of Physics Publishing, 2000


1999

Determination of Species Concentrations and Temperatures in Chlorine Inductively Coupled Plasmas
M V Malyshev, V M Donnelly, N Fuller, K H A Bogart, I P Herman
APS Meeting Abstracts, 1999



Year Unknown

A Simple UV/VUV reflectometer
DB Straight, H Sinha, JL Lauer, NC Fuller, SU Engelmann, Y Zhang, GA Antonelli, Y Nishi, JL Shohet
DB Straight, H Sinha, JL Lauer, NC Fuller..., 0