Richard G (Ricki) Southwick  Richard G (Ricki) Southwick photo       

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Characterization and Reliability
Albany, NY USA
  +1dash518dash292dash7464

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Professional Associations

Professional Associations:  IEEE Electron Devices Society (EDS)


2017

Understanding the interfacial layer formation on strained Si 1- x Ge x channels and their correlation to inversion layer hole mobility
Lee, CH and Southwick, RG and Bao, R and Mochizuki, S and Paruchuri, V and Jagannathan, H
VLSI Technology, 2017 Symposium on, pp. T126--T127
Abstract

Time dependent dielectric breakdown of SiN, SiBCN and SiOCN spacer dielectrics
Southwick, RG and Wu, E and Mehta, S and Stathis, JH
Reliability Physics Symposium (IRPS), 2017 IEEE International, pp. DG--1
Abstract

Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs
Parihar, Narendra and Southwick, Richard G and Sharma, Uma and Wang, Miaomiao and Stathis, James H and Mahapatra, Souvik
Reliability Physics Symposium (IRPS), 2017 IEEE International, pp. 2D--4
Abstract


2016

Process optimizations for NBTI/PBTI for future replacement metal gate technologies
Linder, Barry P and Dasgupta, A and Ando, T and Cartier, E and Kwon, U and Southwick, R and Wang, M and Krishnan, SA and Hopstaken, M and Bajaj, M and others
Reliability Physics Symposium (IRPS), 2016 IEEE International, pp. 4B--1
Abstract

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
Xie, R and Montanini, P and Akarvardar, K and Tripathi, N and Haran, B and Johnson, S and Hook, T and Hamieh, B and Corliss, D and Wang, J and others
Electron Devices Meeting (IEDM), 2016 IEEE International, pp. 2--7
Abstract

Engineering the electronic defect bands at the Si 1- x Ge x/IL interface: Approaching the intrinsic carrier transport in compressively-strained Si 1- x Ge x pFETs
Lee, ChoongHyun and Southwick, Richard G and Jagannathan, Hemanth
Electron Devices Meeting (IEDM), 2016 IEEE International, pp. 31--1
Abstract

Hot carrier effect in ultra-scaled replacement metal gate Si ix Ge x channel p-FinFETs
Wang, Miaomiao and Miao, Xin and Stathis, James H and Southwick, Richard and Linder, Barry P and Liu, Derrick and Bao, Ruqiang and Watanabe, Koji
Electron Devices Meeting (IEDM), 2016 IEEE International, pp. 15--4
Abstract

Observation of strong reflection of electron waves exiting a ballistic channel at low energy
Vaz, Canute I and Liu, Changze and Campbell, Jason P and Ryan, Jason T and Southwick III, Richard G and Gundlach, David and Oates, Anthony S and Huang, Ru and Cheung, Kin P
AIP advances 6(6), 065212, AIP Publishing, 2016
Abstract

Selective GeO x-scavenging from interfacial layer on Si 1- x Ge x channel for high mobility Si/Si 1- x Ge x CMOS application
Lee, CH and Kim, H and Jamison, P and Southwick, RG and Mochizuki, S and Watanabe, K and Bao, R and Galatage, R and Guillaumet, S and Ando, T and others
VLSI Technology, 2016 IEEE Symposium on, pp. 1--2
Abstract

FINFET Technology Featuring High Mobility SiGe Channel for 10nm and Beyond
D. Guo, G. Karve, G. Tsutsui, K. Y. Lim, R. Robison, T. Hook, R. Vega, D. Liu, S. Bedell, S. Mochizuki, F. Lie, K. Akarvardar, M. Wang, R. Bao, S. Burns, V. Chan, K. Cheng, J. Demarest, J. Fronheiser, P. Hashemi, J. Kelly, J. Li, N. Loubet, P. Montanini,
VLSI Technology Symposium, IEEE, JSAP, 2016
Abstract


2015

Frequency-modulated charge pumping with extremely high gate leakage
Ryan, Jason Thomas and Zou, Jibin and Southwick, Richard and Campbell, Jason Paul and Cheung, Kin P and Oates, Anthony S and Huang, Ru
IEEE Transactions on Electron Devices 62(3), 769--775, IEEE, 2015
Abstract

Total ionizing dose radiation effects on 14 nm FinFET and SOI UTBB technologies
Hughes, Harold and McMarr, Patrick and Alles, Michael and Zhang, Enxia and Arutt, Charles and Doris, Bruce and Liu, Derrick and Southwick, Richard and Oldiges, Philip
Radiation Effects Data Workshop (REDW), 2015 IEEE, pp. 1--6
Abstract

A Novel ALD SiBCN Low-k Spacer for Parasitic Capacitance Reduction in FinFETs
T. Yamashita, S. Mehta, V. Basker, R. Southwick, A. Kumar, R. Kambhampati, R. Sathiyanarayanan, J. Johnson, T. Hook, S. Cohen, J. Li, A. Madan, Z. Zhu, L. Tai, Y. Yao, P. Chinthamanipeta, M. Hopstaken, Zuoguang Liu, D. Lu, F. Chen, S. Khan, et. al.
2015 Symposium on VLSI Technology and Circuits (VLSI)

NBTI in Si 0.5 Ge 0.5 RMG gate stacks—Effect of high-k nitridation
Srinivasan, P and Fronheiser, J and Siddiqui, S and Kerber, A and Edge, LF and Southwick, RG and Cartier, E
Reliability Physics Symposium (IRPS), 2015 IEEE International, pp. 2F--5
Abstract


2014

A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies
DeSalvo, B and Morin, P and Pala, M and Ghibaudo, G and Rozeau, O and Liu, Q and Pofelski, A and Martini, S and Cass{\'e}, M and Pilorget, S and others
Electron Devices Meeting (IEDM), 2014 IEEE International, pp. 7--2
Abstract

10nm FINFET technology for low power and high performance applications
D. Guo, H Shang, Kazuyuki Seo, B Haran, T Standaert, Deepika Gupta, E Alptekin, D Bae, G Bae, D Chanemougame, others
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on, pp. 1--4

SOI FinFET versus bulk FinFET for 10nm and below
Hook, Terence B and Allibert, F and Balakrishnan, K and Doris, Bruce and Guo, Dechao and Mavilla, Narasimha and Nowak, E and Tsutsui, G and Southwick, R and Strane, J and others
2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), pp. 1--3
Abstract

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI
Seo, K-I and Haran, B and Gupta, D and Guo, D and Standaert, T and Xie, R and Shang, H and Alptekin, E and Bae, D-I and Bae, G and others
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on, pp. 1--2
Abstract

SiGe composition and thickness effects on NBTI in replacement metal gate/high-$\kappa$ technologies
Srinivasan, P and Fronheiser, J and Akarvardar, K and Kerber, A and Edge, LF and Southwick, RG and Cartier, E and Kothari, H
Reliability Physics Symposium, 2014 IEEE International, pp. 6A--3
Abstract

Reliability challenges for the 10nm node and beyond
Stathis, James H and Wang, M and Southwick, RG and Wu, EY and Linder, BP and Liniger, EG and Bonilla, G and Kothari, H
Electron Devices Meeting (IEDM), 2014 IEEE International, pp. 20--6
Abstract

Tunneling currents and reliability of atomic-layer-deposited SiBCN for low-$\kappa$ spacer dielectrics
Southwick, RG and Sathiyanarayanan, R and Bajaj, M and Mehta, S and Yamashita, T and Gundapaneni, S and Pandey, RK and Wu, E and Murali, KVRM and Cohen, S and others
Reliability Physics Symposium, 2014 IEEE International, pp. BD--2
Abstract


2013

Constant shape factor frequency modulated charge pumping (FMCP)
Ryan, Jason T and Campbell, Jason P and Zou, Jibin and Cheung, Kin P and Southwick, RG and Oates, AS and Huang, Rue
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International, pp. 21--25
Abstract

Reliability monitoring for highly leaky devices
Ryan, Jason T and Campbell, Jason P and Cheung, Kin P and Suehle, John S and Southwick, RG and Oates, AS
Reliability Physics Symposium (IRPS), 2013 IEEE International, pp. 2D--5
Abstract

Frequency-modulated charge pumping: Defect measurements with high gate leakage
Ryan, Jason Thomas and Southwick, Richard G and Campbell, Jason Paul and Cheung, Kin P and Oates, Anthony S and Suehle, John S
IEEE Electron Device Letters, IEEE, 2013
Abstract


2012

Series resistance: A monitor for hot carrier stress
Campbell, Jason P and Drozdov, SA and Cheung, Kin P and Southwick, Richard G and Ryan, Jason T and Suehle, John S and Oates, AS
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International, pp. 157--160
Abstract

MOSFET low frequency noise prediction and control
Cheung, Kin P and Southwick, Richard G and Campbell, Jason P
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on, pp. 1--4
Abstract

Spectroscopic charge pumping in the presence of high densities of bulk dielectric traps
Ryan, Jason T and Southwick, Richard G and Campbell, Jason P and Cheung, Kin P and Young, CD and Suehle, JS
Reliability Physics Symposium (IRPS), 2012 IEEE International, pp. XT--1
Abstract

Channel length-dependent series resistance?
Campbell, Jason P and Cheung, Kin P and Drozdov, SA and Southwick, Richard G and Ryan, Jason T and Oates, AS and Suehle, John S
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE, pp. 1--2
Abstract

Frequency dependent charge pumping—A defect depth profiling tool?
Ryan, Jason T and Southwick, Richard G and Campbell, Jason P and Cheung, Kin P and Suehle, John S
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International, pp. 147--150
Abstract

On the contribution of bulk defects on charge pumping current
Ryan, Jason T and Southwick, Richard G and Campbell, Jason P and Cheung, Kin P and Suehle, John S
IEEE Transactions on Electron Devices 59(11), 2943--2949, IEEE, 2012
Abstract

Physical model for random telegraph noise amplitudes and implications
Southwick, Richard G and Cheung, Kin P and Campbell, Jason P and Drozdov, SA and Ryan, Jason T and Suehle, John S and Oates, AS
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE, pp. 1--2
Abstract


2011

Cryogenic to room temperature effects of NBTI in high-k PMOS devices
Southwick, Richard G and Purnell, Shem T and Rapp, Blake A and Thompson, Ryan J and Pugmire, Shane K and Kaczer, Ben and Grasser, Tibor and Knowlton, William B
Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International, pp. 12--16
Abstract

When does a circuit really fail?
Ryan, Jason T and Wei, Lan and Campbell, Jason P and Southwick, Richard G and Cheung, Kin P and Oates, AS and Wong, H-SP and Suehle, J
Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International, pp. 33--37
Abstract

Experimentally based methodology for charge pumping bulk defect trapping correction
Ryan, Jason T and Southwick, Richard G and Campbell, Jason P and Cheung, Kin P and Young, CD and Suehle, John S
Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International, pp. 23--26
Abstract

On the “U-shaped” continuum of band edge states at the Si/SiO2 interface
Ryan, Jason T and Southwick, Richard G and Campbell, Jason P and Cheung, Kin P and Young, CD and Suehle, JS
Applied Physics Letters 99(22), 223516, AIP, 2011
Abstract

An interactive simulation tool for complex multilayer dielectric devices
Southwick, Richard G and Sup, Aaron and Jain, Amit and Knowlton, William B
IEEE Transactions on Device and Materials Reliability 11(2), 236--243, IEEE, 2011
Abstract


2010

Cryogenic Characterization of Charge Trapping in MOSFET High-k Dielectrics
Butler, Ross and Southwick III, Richard G and Knowlton, William B
2010 - scholarworks.boisestate.edu
Abstract

Development of Experimental Techniques for the Study of Negative Bias Temperature Instability in pMOSFET Devices
Butler, Ross and Southwick III, Richard G and Grasser, Dr and Kaczer, Dr and others
2010 - scholarworks.boisestate.edu
Abstract

An Investigation of Carrier Transport in Hafnium Oxide/Silicon Dioxide MOS Gate Dielectric Stacks from 5.6-400K
Southwick III, Richard G
2010 - scholarworks.boisestate.edu
Abstract

Limitations of Poole--Frenkel Conduction in Bilayer HfO2\SiO2 MOS Devices
Southwick, Richard G and Reed, Justin and Buu, Christopher and Butler, Ross and Bersuker, Gennadi and Knowlton, William B
IEEE Transactions on device and materials reliability 10(2), 201--207, IEEE, 2010
Abstract


2009

Initial Investigations of Sub-RF AC Methods for Metal-Oxide-Semiconductor Devices and Trap-Based Flash Nonvolatile Memory
Buu, Chris and Reed, Justin C and Southwick, Richard G and Yurke, Bernard
2009 - scholarworks.boisestate.edu
Abstract

Experimental Evidence for Polaron Hopping Conduction in HfO 2--A Cryogenic Study
Reed, Justin and Southwick, Richard G and Butler, Ross and Buu, Chris
2009 - scholarworks.boisestate.edu
Abstract


2008

A Novel Approach to Investigate the Reliability of Titanium Nitride/Hafnium Oxide/Silicon Dioxide/Silicon Gate Stacks
Southwick III, Richard G
2008 - scholarworks.boisestate.edu
Abstract

Temperature (5.6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO 2/SiO 2 and SiO 2 MOS Gate Stacks
Southwick, Richard G and Reed, Justin and Buu, Christopher and Bui, Hieu and Butler, Ross and Bersuker, G and Knowlton, William B
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International, pp. 48--54
Abstract

Integrating through-wafer interconnects with active devices and circuits
Jozwiak, Jim and Southwick III, Richard G and Johnson, Vaughn N and Knowlton, William B and Moll, Amy J
IEEE transactions on advanced packaging 31(1), 4--13, IEEE, 2008
Abstract


2006

Stacked dual-oxide MOS energy band diagram visual representation program (IRW student paper)
Southwick, Richard G and Knowlton, William B
IEEE Transactions on Device and Materials Reliability 6(2), 136--145, IEEE, 2006
Abstract