Sebastian Engelmann  Sebastian Engelmann photo       

contact information

Manager, Advanced Plasma Processing Group
Thomas J. Watson Research Center, Yorktown Heights, NY USA
  +1dash914dash945dash1661

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2017

Novel, High-Throughput, Fiber-to-Chip Assembly Employing Only Off-the-Shelf Components
Boyer, Nicolas and Janta-Polczynski, Alexander and Morissette, Jean-Fran{\c{c}}ois and Martel, Stephan and Lichoulas, Ted W and Kamlapurkar, Swetha and Engelmann, Sebastian and Fortier, Paul and Barwicz, Tymon
Electronic Components and Technology Conference (ECTC), 2017 IEEE 67th, pp. 1632--1639

Highly selective dry etching of polystyrene-poly (methyl methacrylate) block copolymer by gas pulsing carbon monoxide-based plasmas
Miyazoe, Hiroyuki and Jagtiani, Ashish V and Tsai, Hsin-Yu and Engelmann, Sebastian U and Joseph, Eric A
Journal of Physics D: Applied Physics 50(20), 204001, IOP Publishing, 2017

Bowtie Photonic Crystal with Deep Subwavelength Mode Confinement in a Dielectric Material
Hu, Shuren and Khater, Marwan and Salas-Montiel, Rafael and Kratschmer, Ernst and Engelmann, Sebastian and Green, William and Weiss, Sharon M
CLEO: QELS\_Fundamental Science, pp. FTh3H--2, 2017

High-throughput photonic packaging
Barwicz, Tymon and Lichoulas, Ted W and Taira, Yoichi and Martin, Yves and Takenobu, Shotaro and Janta-Polczynski, Alexander and Numata, Hidetoshi and Kimbrell, Eddie L and Nah, Jae-Woong and Peng, Bo and others
Optical Fiber Communications Conference and Exhibition (OFC), 2017, pp. 1--3

Effects of ultraviolet and vacuum ultraviolet synchrotron radiation on organic underlayers to modulate line-edge roughness of fine-pitch poly-silicon patterns
Miyazoe, Hiroyuki and Engelmann, Sebastian U and Guillorn, Michael A and Pei, Dongfei and Li, Weiyi and Lauer, Jason L and Leon Shohet, J and Fuller, Nicholas CM
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35(5), 05C306, AVS, 2017

High performance PMOS with strained high-Ge-content SiGe fins for advanced logic applications
Hashemi, Pouya and Ando, Takashi and Balakrishnan, Karthik and Koswatta, Siyuranga and Lee, Kam-Leung and Ott, John A and Chan, Kevin and Bruley, John and Engelmann, Sebastian U and Narayanan, Vijay and others
VLSI Technology, Systems and Application (VLSI-TSA), 2017 International Symposium on, pp. 1--2

A silicon metamaterial chip-to-chip coupler for photonic flip-chip applications
Barwicz, Tymon and Kamlapurkar, Swetha and Martin, Yves and Bruce, Robert L and Engelmann, Sebastian
Optical Fiber Communication Conference, pp. Th2A--39, 2017

Cyclic Cl2/H2 quasi-atomic layer etching approach for TiN and TaN patterning using organic masks
Nathan Marchack, John M. Papalia, Sebastian Engelmann, Eric A. Joseph
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35(5), 05C314, 2017

Directed self-assembly patterning strategies for phase change memory applications
Bruce, Robert L and Fraczak, Gloria and Papalia, John M and Tsai, HsinYu and BrightSky, Matt and Miyazoe, Hiroyuki and Zhu, Yu and Engelmann, Sebastian U and Lung, Hsiang-Lan and Masuda, Takeshi and others
SPIE Advanced Lithography, pp. 101490J--101490J, 2017

Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
Metzler, Dominik and Li, Chen and Engelmann, Sebastian and Bruce, Robert L and Joseph, Eric A and Oehrlein, Gottlieb S
The Journal of Chemical Physics 146(5), 052801, AIP Publishing, 2017


2016

Applications for Surface Engineering Using Atomic Layer Etching-Invited Paper
Papalia, John and Marchack, Nathan and Bruce, Robert and Miyazoe, Hiroyuki and Engelmann, Sebastian and Joseph, Eric A
Solid State Phenomena, pp. 41--48, 2016

Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4
Li, Chen and Metzler, Dominik and Lai, Chiukin Steven and Hudson, Eric A and Oehrlein, Gottlieb S
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34(4), 041307, AVS, 2016

Evaluation of ALE processes for patterning
Papalia, JM and Marchack, N and Bruce, RL and Miyazoe, H and Engelmann, SU and Joseph, EA
SPIE Advanced Lithography, pp. 97820H--97820H, 2016

Prospects of High-Ge-Content Strained SiGe for Advanced FinFET Generations
Hashemi, Pouya and Balakrishnan, Karthik and Ando, Takashi and Bruley, John and Ott, John A and Engelmann, Sebastian and Chan, Kevin and Lee, Kam-Leung and Park, Dae-Gyu and Mo, Renee T and others
ECS Transactions 75(8), 39--50, The Electrochemical Society, 2016

A compliant polymer interface with 1.4 dB loss between standard fibers and nanophotonic waveguides
Barwicz, Tymon and Janta-Polczynski, Alexander and Takenobu, Shotaro and Morissette, Jean-Francois and Peng, Bo and Taira, Yoichi and Numata, Hidetoshi and Kamlapurkar, Swetha and Engelmann, Sebastian and Fortier, Paul and others
Frontiers in Optics, pp. FTu1D--2, 2016

Sub-micron bondline-shape control in automated assembly of photonic devices
Boyer, Nicolas and Janta-Polczynski, Alexander and Morissette, Jean-Francois and Kamlapurkar, Swetha and Engelmann, Sebastian and Taira, Yoichi and Takenobu, Shotaro and Numata, Hidetoshi and Fortier, Paul and Barwicz, Tymon
Electronic Components and Technology Conference (ECTC), 2016 IEEE 66th, pp. 2257--2263

A Novel Approach to Photonic Packaging Leveraging Existing High-Throughput Microelectronic Facilities
Barwicz, Tymon and Taira, Yoichi and Lichoulas, Ted W and Boyer, Nicolas and Martin, Yves and Numata, Hidetoshi and Nah, Jae-Woong and Takenobu, Shotaro and Janta-Polczynski, Alexander and Kimbrell, Eddie L and others
IEEE Journal of Selected Topics in Quantum Electronics 22(6), 455--466, IEEE, 2016

Demonstration of record SiGe transconductance and short-channel current drive in High-Ge-Content SiGe PMOS FinFETs with improved junction and scaled EOT
Hashemi, Pouya and Lee, Kam-Leung and Ando, Takashi and Balakrishnan, Karthik and Ott, John A and Koswatta, Syuranga and Engelmann, Sebastian U and Park, Dae-Gyu and Narayanan, Vijay and Mo, Renee T and others
VLSI Technology, 2016 IEEE Symposium on, pp. 1--2

Demonstration of Self-Aligned Flip-Chip Photonic Assembly with 1.1 dB Loss and> 120nm Bandwidth
Barwicz, Tymon and Martin, Yves and Nah, Jae-Woong and Kamlapurkar, Swetha and Bruce, Robert L and Engelmann, Sebastian and Vlasov, Yurii A
Frontiers in Optics, pp. FF5F--3, 2016

Toward high-yield 3D self-alignment of flip-chip assemblies via solder surface tension
Martin, Yves and Nah, Jae-Woong and Kamlapurkar, Swetha and Engelmann, Sebastian and Barwicz, Tymon
Electronic Components and Technology Conference (ECTC), 2016 IEEE 66th, pp. 588--594

Evaluation of ALE processes for patterning
J. M. Papalia ; N. Marchack ; R. L. Bruce ; H. Miyazoe ; S. U. Engelmann ; E. A. Joseph
Advanced Etch Technology for Nanopatterning V, 2016

Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
Dominik Metzler, Chen Li, Sebastian Engelmann, Robert L Bruce, Eric A Joseph, Gottlieb S Oehrlein,
Journal of Vacuum Science & Technology A 34(1), 01B101, AVS: Science & Technology of Materials, Interfaces, and Processing, 2016

He plasma pretreatment of organic masking materials for performance improvement during pattern transfer by plasma etching
Dominik Metzler, Florian Weilnboeck, Sebastian Engelmann, Robert L Bruce, and Gottlieb S Oehrlein
Journal of Vacuum Science & Technology B 34(4), 041604, AVS: Science & Technology of Materials, Interfaces, and Processing, 2016

A Metamaterial Converter Centered at 1490nm for Interfacing Standard Fibers to Nanophotonic Waveguides
Tymon Barwicz, Nicolas Boyer, Alexander Janta-Polczynski, Jean-Francois Morissette, Yan Thibodeau, Luc Patry, Ted W Lichoulas, Eddie L Kimbrell, Stephan Martel, Swetha Kamlapurkar and others
Optical Fiber Communication Conference, pp. M2I--3, 2016

Application of cyclic fluorocarbon/argon discharges to device patterning
Dominik Metzler, Kishore Uppireddi, Robert L Bruce, Hiroyuki Miyazoe, Yu Zhu, William Price, Ed S Sikorski, Chen Li, Sebastian U Engelmann, Eric A Joseph and others
Journal of Vacuum Science & Technology A 34(1), 01B102, AVS: Science & Technology of Materials, Interfaces, and Processing, 2016

Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
Ashish V Jagtiani, Hiroyuki Miyazoe, Josephine Chang, Damon B Farmer, Michael Engel, Deborah Neumayer, Shu-Jen Han, Sebastian U Engelmann, David R Boris, Sandra C Hernandez and others
Journal of Vacuum Science & Technology A 34(1), 01B103, AVS: Science & Technology of Materials, Interfaces, and Processing, 2016


2015

Formation of nanometer-thick delaminated amorphous carbon layer by two-step plasma processing of methacrylate-based polymer
Metzler, Dominik and Weilnboeck, Florian and Hernandez, Sandra C and Walton, Scott G and Bruce, Robert L and Engelmann, Sebastian and Salamanca-Riba, Lourdes and Oehrlein, Gottlieb S
Journal of Vacuum Science & Technology B 33(5), 051601, AVS: Science & Technology of Materials, Interfaces, and Processing, 2015

Automated, self-aligned assembly of 12 fibers per nanophotonic chip with standard microelectronics assembly tooling
Barwicz, Tymon and Boyer, Nicolas and Harel, Stephane and Lichoulas, Ted W and Kimbrell, Eddie L and Janta-Polczynski, Alexander and Kamlapurkar, Swetha and Engelmann, Sebastian and Vlasov, Yurii A and Fortier, Paul
Electronic Components and Technology Conference (ECTC), 2015 IEEE 65th, pp. 775--782

Flip chip assembly with sub-micron 3D re-alignment via solder surface tension
Nah, Jae-Woong and Martin, Yves and Kamlapurkar, Swetha and Engelmann, Sebastian and Bruce, Robert L and Barwicz, Tymon
Electronic Components and Technology Conference (ECTC), 2015 IEEE 65th, pp. 35--40

Enabling large-scale deployment of photonics through cost-efficient and scalable packaging
Barwicz, Tymon and Taira, Yoichi and Lichoulas, Ted W and Boyer, Nicolas and Numata, Hidetoshi and Martin, Yves and Nah, Jae-Woong and Takenobu, Shotaro and Janta-Polczynski, Alexander and Kimbrell, Eddie L and others
Group IV Photonics (GFP), 2015 IEEE 12th International Conference on, pp. 155--156

Challenges of Tailoring Surface Chemistry and Plasma/Surface Interactions to Advance Atomic Layer Etching
S. U. Engelmann, R. L. Bruce, M. Nakamura, D. Metzler, S. G. Walton, E. A. Joseph
Ecs Journal of Solid State Science and Technology 4(6), N5054-N5060, 2015

Photonic Packaging in High-Throughput Microelectronic Assembly Lines for Cost-Efficiency and Scalability
T Barwicz, Y Taira, TW Licholaus, N Boyer, H Numata, Y Martin, J Nah, S Takenobu, A Janta-Polczynski, E Kimbrell, R Leidy, M Khater, S Kumlurpurkar, S Engelmann, YA Vlasov, P Fortier
Optical Fiber Communication Conference, 2015

Advanced Etch Technology for Nanopatterning IV
Q Lin, SU Engelmann, Y Zhang
Proc. SPIE 9428, Advanced Etch Technology for Nanopatterning IV, 2015

Optical demonstration of a compliant polymer interface between standard fibers and nanophotonic waveguides
T. Barwicz, Y. Taira, S. Takenobu, N. Boyer, A. Janta-Polczynski, Y. Thibodeau, S. Kamlapurkar, S. Engelmann, H. Numata, R.L. Bruce, S. Laflamme, P. Fortier, Y.A. Vlasov
2015 Optical Fiber Communications Conference and Exhibition (OFC). Proceedings, 3 pp.

An O-band Metamaterial Converter Interfacing Standard Optical Fibers to Silicon Nanophotonic Waveguides
Tymon Barwicz, Alexander Janta-Polczynski, Marwan Khater, Yan Thibodeau, Robert Leidy, Jeffrey Maling, Stephan Martel, Sebastian Engelmann, Jason S Orcutt, Paul Fortier, William Green
Optical Fiber Communication Conference, pp. Th3F--3, 2015


2014

Strained Si 1- x Ge x-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
Hashemi, Pouya and Balakrishnan, Karthik and Majumdar, Amlan and Khakifirooz, Ali and Kim, Wanki and Baraskar, Ashish and Yang, Li A and Chan, Kevin and Engelmann, Sebastian U and Ott, John A and others
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on, pp. 1--2

First demonstration of high-Ge-content strained-Si 1- x Ge x (x= 0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
Hashemi, Pouya and Balakrishnan, Karthik and Engelmann, Sebastian U and Ott, John A and Khakifirooz, Ali and Baraskar, Ashish and Hopstaken, Marinus and Newbury, Joseph S and Chan, Kevin K and Leobandung, Effendi and others
Electron Devices Meeting (IEDM), 2014 IEEE International, pp. 16--1

Dopant-Segregation Technique for Leakage Reduction and Performance Improvement in Trigate Transistors Without Raised Source/Drain Epitaxy
F Liu, Z Zhang, MH Khater, Y Zhu, SO Koswatta, J Chang, J Gonsalves, W Price, SU Engelmann, MA Guillorn
Electron Device Letters, IEEE , 2014

First demonstration of high-Ge-content strained-Si 1" x Ge x (x= 0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and ...
P Hashemi, K Balakrishnan, SU Engelmann, JA Ott, A Khakifrooz, A Baraskar, M Hopstaken, JS Newbury, KK Chan, E Leobandung, RT Mo, DG Park
Electron Devices Meeting (IEDM),, 2014

Contamination mitigation of hydrogen silsesquioxane resist processed with Na+-containing developer for nanoscale CMOS device patterning
M Brink, I Lauer, SU Engelmann, A Majumdar, SA Cohen, E Kratschmer, MA Guillorn
J. Vac. Sci. Technol. B 32, 2014

Strained SiGe on Insulator FinFETs: a P-FET Candidate for 10nm Node
P Hashemi, K Balakrishnan, A Majumdar, S Engelmann, M Hopstaken, W Kim, JA Ott, E Leobandung, DG Park
ECS Trans., 2014

Assembly of mechanically compliant interfaces between optical fibers and nanophotonic chips
T Barwicz, Y Taira, H Numata, N Boyer, S Harel, S Kumlurpurkar, S Takenobu, S Laflamme, S Engelmann, Y Vlasov, P Fortier
Electronic Components and Technology Conference (ECTC), IEEE , 2014

Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma
Dominik Metzler, Robert L. Bruce, Sebastian Engelmann, Eric A. Joseph, Gottlieb S. Oehrlein
Journal of Vacuum Science & Technology a 32(2), 2014

Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
H Tsai, H Miyazoe, JB Chang, J Pitera, CC Liu, M Brink, I Lauer, J Cheng, S Engelmann, J Rozen, JJ Bucchignano, DP Klaus, S Dawes, L Gignac, C Breslin, EA Joseph, DP Sanders, ME Colburn, MA Guillorn
Electron Devices Meeting (IEDM), 2014 IEEE International

Strained Si 1" x Ge x-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for ...
P Hashemi, K Balakrishnan, A Majumdar, A Khakifrooz, W Kim, A Baraskar, LA Yang, K Chan, SU Engelmann, JA Ott, DA Antoniadis, E Leobandung, DG Park
VLSI Technology (VLSI-Technology): Digest of Technical Papers, Symposium on , 2014



2013

High-performance Si 1- x Ge x channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
Hashemi, Pouya and Kobayashi, Masato and Majumdar, Angshul and Yang, Li A and Baraskar, Ashish and Balakrishnan, K and Kim, Wonhee and Chan, Kap Luk and Engelmann, Sebastian U and Ott, John A and others
VLSI Circuits (VLSIC), 2013 Symposium on, pp. T18--T19

Investigation of plasma etch damage to porous oxycarbosilane ultra low-k dielectric
R. L. Bruce, S. Engelmann, S. Purushothaman, W. Volksen, T. J. Frot, T. Magbitang, G. Dubois, M. Darnon
Journal of Physics D-Applied Physics 46(26), 2013

Subtractive W contact and local interconnect co-integration (CLIC)
F Liu, B Fletcher, EA Joseph, Y Zhu, J Gonsalves, W Price, GM Fritz, SU Engelmann, A Pyzyna, Z Zhang, C Cabral, MA Guillorn
Interconnect Technology Conference (IITC), 2013

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node
Z Zhang, SO Koswatta, SW Bedell, A Baraskar, M Guillorn, SU Engelmann, Y Zhu, J Gonsalves, A Pyzyna, M Hopstaken, C Witt, L Yang, F Liu, J Newbury, W Song, C Cabral, M Lofaro, AS Ozcan, M Raymond, C Lavoie, JW Sleight, KP Rodbell, PM Solomon
Electron Device Letters, IEEE , 2013

Advanced Plasma Etch for the 10nm node and Beyond
E. A. Joseph, S. U. Engelmann, H. Miyazoe, R. L. Bruce, M. Nakamura, T. Suzuki, M. Hoinkis, Y Zhang, GS Oehrlein, Q Lin
Advanced Etch Technology For Nanopatterning Ii8685, 2013

Improved frequency response in a SiGe npn device through improved dopant activation
J Adkisson, M Khater, J Gambino, P Cheng, V Jain, R Camillo-Castillo, C Lavoie, A Sutton, O Gluschenkov, QZ Liu, T McDevitt, S Engelmann, J Pekarik, DL Harame
ECS Trans., 2013

Pattern transfer of directed self-assembly patterns for CMOS device applications
H Tsai, H Miyazoe, S Engelmann, CC Liu, L Gignac, J Bucchignano, D Klaus, C Breslin, E Joseph, J Cheng, D Sanders, M Guillorn
J. Micro/Nanolith. MEMS MOEMS., 2013

SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz f T/f MAX through reduced R b and C cb parasitics
RA Camillo-Castillo, QZ Liu, JW Adkisson, MH Khater, PB Gray, V Jain, RK Leidy, JJ Pekarik, JP Gambino, B Zetterlund, C Willets, C Parrish, SU Engelmann, AM Pyzyna, P Cheng, DL Harame
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), IEEE , 2013

Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond
S Bangsaruntip, K Balakrishnan, SL Cheng, J Chang, M Brink, I Lauer, RL Bruce, SU Engelmann, A Pyzyna, GM Cohen, LM Gignac, CM Breslin, JS Newbury, DP Klaus, A Majumdar, JW Sleight, MA Guillorn
Electron Devices Meeting (IEDM), IEEE International , 2013

High-performance Si 1" x Ge x channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
P Hashemi, M Kobayashi, A Majumdar, LA Yang, A Baraskar, K Balakrishnan, W Kim, K Chan, SU Engelmann, JA Ott, SW Bedell, CE Murray, S Liang, RH Dennard, JW Sleight, E Leobandung, DG Park
VLSI Circuits (VLSIC), 2013 Symposium on

Pattern Transfer of Directed Self-Assembly (DSA) Patterns for CMOS Device Applications
H Tsai, H Miyazoe, S Engelmann, S Bangsaruntip, I Lauer, J Bucchignano, D Klaus, LM Gignac, E Joseph, J Cheng, D Sanders, M Guillorn
Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850L, 2013


2012

The effects of plasma exposure on low-k dielectric materials
JL Shohet, H Ren, MT Nichols, H Sinha, W Lu, K Mavrakakis, Q Lin, NM Russell, M Tomoyasu, GA Antonelli, SU Engelmann, NCM Fuller, V Ryan, Y Nishi
Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning,, 2012

The effects of vacuum ultraviolet radiation on low-k dielectric films
H Sinha, H Ren, MT Nichols, JL Lauer, JL Shohet, M Tomoyasu, NM Russell, G Jiang, GA Antonelli, NCM Fuller, S Engelmann, Q Lin, V Ryan, Y Nishi
Journal of Applied Physics 112, 2012

Patterning of CMOS Device Structures for 40-80nm Pitches and Beyond
S. U. Engelmann, R. Martin, R. L. Bruce, H. Miyazoe, N. C. M. Fuller, W. S. Graham, E. M. Sikorski, M. Glodde, M. Brink, H. Tsai, J. Bucchignano, D. Klaus, E. Kratschmer, M. A. Guillorn, Y Zhang, G Oehrlein, Q Lin
Advanced Etch Technology For Nanopatterning8328, 2012



2011

Systematic studies on reactive ion etch-induced deformations of organic underlayers
M Glodde, S Engelmann, M Guillorn, S Kanakasabapathy, E Mclellan, CS Koay, Y Yin, M Sankarapandian, JC Arnold, K Petrillo, M Brink, H Miyazoe, E Anuja de Silva, H Yusuff, K Yoon, Y Wei, C Wu, P Rao Varasani
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 2011

Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity
F. Weilnboeck, D. Metzler, N. Kumar, G. S. Oehrlein, R. L. Bruce, S. Engelmann, N. Fuller
Applied Physics Letters 99(26), 2011

A 0.021 $\mu$m 2 trigate SRAM cell with aggressively scaled gate and contact pitch
MA Guillorn, J Chang, A Pyzyna, S Engelmann, M Glodde, E Joseph, R Bruce, JA Ott, A Majumdar, F Liu, others
VLSI Technology (VLSIT), 2011 Symposium on, pp. 64--65

Scaling of SOI FinFETs down to Fin Width of 4 nm for the 10nm technology node
JB Chang, M. Guillorn, PM Solomon, CH Lin, SU Engelmann, A. Pyzyna, JA Ott, WE Haensch
VLSI Technology (VLSIT), 2011 Symposium on, pp. 12--13


2010

Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 2: RIE-based pattern transfer and completion of dual damascene process yielding an electrically functional via chain
Harrer, Stefan and Arnold, John C and Goldfarb, Dario L and Holmes, Steven J and Chen, Rex and Tang, Cherry and Slezak, Mark and Fender, Nicolette and Della Guardia, Ronald A and Joseph, Eric A and others
SPIE Advanced Lithography, pp. 763919--763919, 2010

Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 1: lithographic patterning
DL Goldfarb, S Harrer, JC Arnold, SJ Holmes, R Chen, C Tang, N Fender, M Slezak, RA Della Guardia, EA Joseph, SU Engelmann, RP Varanasi, ME Colburn
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 2010

High Performance and Highly Uniform Metal Hi-K Gate-All-Around Silicon Nanowire MOSFETs
JW Sleight, S Bangsaruntip, G Cohen, A Majumdar, Y Zhang, S Engelmann, N Fuller, L Gignac, S Mittal, J Newbury, T Barwicz, MM Frank, M Guillorn
ECS Trans., 2010

Reflectance and substrate currents of dielectric layers under vacuum ultraviolet irradiation
H Sinha, DB Straight, JL Lauer, NC Fuller, SU Engelmann, Y Zhang, GA Antonelli, M Severson, Y Nishi, JL Shohet
J. Vac. Sci. Technol. A 28, 2010

Gate-all-around silicon nanowire MOSFETs and circuits
JW Sleight, S Bangsaruntip, A Majumdar, GM Cohen, Y Zhang, SU Engelmann, NCM Fuller, LM Gignac, S Mittal, JS Newbury, MM Frank, J Chang, M Guillorn
Device Research Conference (DRC),, 2010

Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm
S Bangsaruntip, A Majumdar, GM Cohen, SU Engelmann, Y Zhang, M Guillorn, LM Gignac, S Mittal, WS Graham, EA Joseph, DP Klaus, J Chang, EA Cartier, JW Sleight
VLSI Technology (VLSIT), 2010 Symposium on

Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry
F Weilnboeck, RL Bruce, S Engelmann, GS Oehrlein, D Nest, T Y Chung, D Graves, M Li, D Wang, C Andes, others
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures28, 993, 2010

Nanowire and nanotube devices
JW Sleight, S Bangsaruntip, A Majumdar, GM Cohen, Y Zhang, SU Engelmann, T Current
Device Research Conference (DRC), 2010, pp. 267--268

Gate-all-around silicon nanowire MOSFETs and circuits
JW Sleight, S Bangsaruntip, A Majumdar, GM Cohen, Y Zhang, SU Engelmann, NCM Fuller, LM Gignac, S Mittal, JS Newbury, others
Device Research Conference (DRC), 2010, pp. 269--272

Measurement of the Indices of Refraction and Extinction Coefficients of Thin-Film Dielectric Materials in the VUV Range
DB Straight, JL Lauer, H Sinha, SU Engelmann, Y Zhang, NC Fuller, JL Shohet
Journal of Vacuum Science and Technology A, 2010


2009

Understanding the roughening and degradation of 193 nm photoresist during plasma processing: synergistic roles of vacuum ultraviolet radiation and ion bombardment
Nest, Dustin and Chung, Ting-Ying and Graves, David B and Engelmann, Sebastian and Bruce, Robert L and Weilnboeck, Florian and Oehrlein, Gottlieb S and Wang, Deyan and Andes, Cecily and Hudson, Eric A
Plasma processes and polymers 6(10), 649--657, Wiley Online Library, 2009

Dependence of photoresist surface modifications during plasma-based pattern transfer on choice of feedgas composition: Comparison of C4F8-and CF4-based ...
S Engelmann, RL Bruce, F Weilnboeck, M Sumiya, T Kwon, R Phaneuf, GS Oehrlein, C Andes, D Graves, D Nest, EA Hudson
J. Vac. Sci. Technol. B 27, 2009

Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping
M Guillorn, J Chang, N Fuller, J Patel, M Darnon, A Pyzyna, E Joseph, S Engelmann, J Ott, J Newbury, D Klaus, J Bucchignano, P Joshi, C Scerbo, E Kratschmer, W Graham, B To, J Parisi, Y Zhang, W Haensch
J. Vac. Sci. Technol. B 27, 2009

Trigate 6T SRAM scaling to 0.06 m 2
M Guillorn, J Chang, A Pyzyna, S Engelmann, E Joseph, B Fletcher, C Cabral, C Lin, A Bryant, M Darnon, J Ott, C Lavoie, M Frank, L Gignac, J Newbury, C Wang, D Klaus, E Kratschmer, J Bucchignano, B To, W Graham, I Lauer, E Sikorski, S Carter, V Narayanan,
Electron Devices Meeting (IEDM), IEEE International , 2009

High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling
S. Bangsaruntip, G. M. Cohen, A. Majumdar, Y. Zhang, S. U. Engelmann, N. C. M. Fuller, L. M. Gignac, S. Mittal, J. S. Newbury, M. Guillorn, T. Barwicz, L. Sekaric, M. M. Frank, and J. W. Sleight
IEDM Technical Digest, pp. 297-300, 2009

Plasma-surface interactions of advanced photoresists with C4F8/Ar discharges: Plasma parameter dependencies
S Engelmann, RL Bruce, M Sumiya, T Kwon, R Phaneuf, GS Oehrlein, C Andes, D Graves, D Nest, EA Hudson
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures 27(1), 92--106, AVS, 2009

Understanding the Roughening and Degradation of 193 nm Photoresist during Plasma Processing: Synergistic Roles of Vacuum Ultraviolet Radiation and Ion Bombardment
Dustin Nest, Ting-Ying Chung, David B. Graves, Sebastian Engelmann, Robert L. Bruce, Florian Weilnboeck, Gottlieb S. Oehrlein, Deyan Wang, Cecily Andes, Eric A. Hudson
Plasma Processes and Polymers 6(10), 649-657, 2009

Study of ion and vacuum ultraviolet-induced effects on styrene-and ester-based polymers exposed to argon plasma
RL Bruce, S Engelmann, T Lin, T Kwon, RJ Phaneuf, GS Oehrlein, BK Long, CG Willson, JJ Vegh, D Nest, others
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures27, 1142, 2009

Dependence of Polymer Surface Roughening Rate on Deposited Energy Density During Plasma Processing
Sebastian Engelmann, Robert L. Bruce, Florian Weilnboeck, Gottlieb S. Oehrlein, Dustin Nest, David B. Graves, Cecily Andes, Eric A. Hudson
Plasma Processes and Polymers 6(8), 484-489, 2009

Real-time studies of surface roughness development and reticulation mechanism of advanced photoresist materials during plasma processing
A. R. Pal, R. L. Bruce, F. Weilnboeck, S. Engelmann, T. Lin, M. -S. Kuo, R. Phaneuf, G. S. Oehrlein
Journal of Applied Physics 105(1), 2009


2008

Molecular dynamics simulations of near-surface modification of polystyrene: Bombardment with Ar+ and Ar+/radical chemistries
JJ Vegh, D Nest, DB Graves, R Bruce, S Engelmann, T Kwon, RJ Phaneuf, GS Oehrlein, BK Long, CG Willson
J. Appl. Phys. 104, 2008

Synergistic effects of vacuum ultraviolet radiation, ion bombardment, and heating in 193 nm photoresist roughening and degradation
D. Nest, D. B. Graves, S. Engelmann, R. L. Bruce, F. Weilnboeck, G. S. Oehrlein, C. Andes, E. A. Hudson
Applied Physics Letters 92(15), 2008

Study of 193 nm photoresist degradation during short time fluorocarbon plasma exposures. II. Plasma parameter trends for photoresist degradation
M. Sumiya, R. Bruce, S. Engelmann, F. Weilnboeck, G. S. Oehrlein
Journal of Vacuum Science & Technology B 26(5), 1647-1653, 2008


Study of 193 nm photoresist degradation during short time fluorocarbon plasma exposure. I. Studies of modified layer formation
M. Sumiya, R. Bruce, S. Engelmann, F. Weilnboeck, G. S. Oehrlein
Journal of Vacuum Science & Technology B 26(5), 1637-1646, 2008

Study of 193 nm photoresist degradation during short time fluorocarbon plasma exposure III. Effect of fluorocarbon film and initial surface condition on photoresist degradation
M. Sumiya, R. Bruce, S. Engelmann, F. Weilnboeck, G. S. Oehrlein
Journal of Vacuum Science & Technology B 26(6), 1978-1986, 2008


2007

Plasma-surface interactions of model polymers for advanced photoresists using C4F8/ Ar discharges and energetic ion beams
S Engelmann, RL Bruce, T Kwon, R Phaneuf, GS Oehrlein, YC Bae, C Andes, D Graves, D Nest, EA Hudson, others
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures25, 1353, 2007

Near-surface modification of polystyrene by Ar: Molecular dynamics simulations and experimental validation
JJ Vegh, D Nest, DB Graves, R Bruce, S Engelmann, T Kwon, RJ Phaneuf, GS Oehrlein, BK Long, CG Willson
Applied Physics Letters91, 233113, 2007


2006

Studies of plasma surface interactions during short time plasma etching of 193 and 248 nm photoresist materials
X Hua, S Engelmann, GS Oehrlein, P Jiang, P Lazzeri, E Iacob, M Anderle
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures24, 1850, 2006