Sebastian Engelmann  Sebastian Engelmann photo       

contact information

Manager, Advanced Plasma Processing Group
Thomas J. Watson Research Center, Yorktown Heights, NY USA
  +1dash914dash945dash1661

links



2017

Techniques for fabricating horizontally aligned nanochannels for microfluidics and biosensors
Engelmann, Sebastian U and Rossnagel, Stephen M and Zhang, Ying
US Patent 9,643,179

Reactive ion etching assisted lift-off processes for fabricating thick metallization patterns with tight pitch
Cohen, Guy M and Engelmann, Sebastian U and Holmes, Steve and Patel, Jyotica V
US Patent 9,728,444

High aspect ratio patterning of hard mask materials by organic soft masks
Brink, Markus and Engelmann, Sebastian U and Joseph, Eric A and Miyazoe, Hiroyuki
US Patent 9,728,421

High selectivity nitride removal process based on selective polymer deposition
Dasaka, Ravi K and Engelmann, Sebastian U and Fuller, Nicholas CM and Nakamura, Masahiro and Wise, Richard S
US Patent 9,627,533

Low temperature encapsulation for magnetic tunnel junction
A.J. Annunziata, S.U. Engelmann, E.A. Joseph, G.P. Lauer, N.P. Marchack, D.A. Neumayer, M. Yamazaki
US Patent 9,691,972


2016

Techniques for forming contacts for active BEOL
Sebastian U Engelmann, Steve J Holmes, Qinghuang Lin, Nathan P Marchack, Eugene J O'sullivan
US Patent 9,490,164


2015

Neutral hard mask and its application to graphoepitaxy-based directed self-assembly (dsa) patterning
Engelmann, Sebastian U and Khojasteh, Mahmoud and Neumayer, Deborah A and Papalia, John and Tsai, Hsinyu
US Patent App. 14/806,921



2013

Low-Temperature Sidewall Image Transfer Process Using ALD Metals, Metal Oxides and Metal Nitrides
Brink, Markus and Guillorn, Michael A and Engelmann, Sebastian U and Miyazoe, Hiroyuki and Pyzyna, Adam M and Sleight, Jeffrey W
US Patent App. 13/916,109

WET CLEAN PROCESS FOR REMOVING CxHyFz ETCH RESIDUE
RL Bruce, SU Engelmann, EA Joseph, M Khojasteh, M Nakamura, SS Papa Rao, BN To, GG Totir, Y Zhu

Protection of intermetal dielectric layers in multilevel wiring structures
Maxime Darnon, Geraud J. M. Dubois, Sebastian U. Engelmann, Teddie P. Magbitang, Sampath Purushothaman, Muthumanickam Sankarapandian, Willi Volksen
US Patent App 20130056874



2012





2011




High selectivity nitride etch process
JB Chang, SU Engelmann, NCM Fuller, MA Guillorn, M Nakamura




NANOWIRE FET WITH TRAPEZOID GATE STRUCTURE
J W Sleight, S Bangsaruntip, S U Engelmann, Y Zhang
US Patent 20,110,315,950


2010

Gate patterning of nano-channel devices
Nicholas CM Fuller, Sarunya Bangsaruntip, Guy Cohen, Sebastian U Engelmann, Lidija Sekaric, Qingyun Yang, Ying Zhang
US Patent 7,816,275


2009

Gate patterning of nano-channel devices
NCM Fuller, S Bangsaruntip, G Cohen, SU Engelmann, L Sekaric, Q Yang, Y Zhang