Jerry D Tersoff  Jerry D Tersoff photo       

contact information

Principal Research Staff Member
Thomas J. Watson Research Center, Yorktown Heights, NY USA
  +1dash914dash945dash3138

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2017

Self-assembly of ordered graphene nanodot arrays
Camilli, Luca and J{\o}rgensen, Jakob H and Tersoff, Jerry and Stoot, Adam C and Balog, Richard and Cassidy, Andrew and Sadowski, Jerzy T and B{\o}ggild, Peter and Hornek{\ae}r, Liv
Nature Communications8, Nature Publishing Group, 2017
Abstract

Coherent Plasmon and Phonon-Plasmon Resonances in Carbon Nanotubes
Abram L. Falk, Kuan-Chang Chiu, Damon B. Farmer, Qing Cao, Jerry Tersoff, Yi-Hsien Lee, Phaedon Avouris, Shu-Jen Han
Phys. Rev. Lett.118, 257401, American Physical Society, 2017

Carbon nanotube transistors scaled to a 40-nanometer footprint
Qing Cao, Jerry Tersoff, Damon B. Farmer, Yu Zhu, Shu-Jen Han
Science 356(6345), 1369--1372, American Association for the Advancement of Science, 2017


2016

Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires
Gamalski, Andrew D and Tersoff, Jerry and Stach, Eric A
Nano letters 16(4), 2283--2288, ACS Publications, 2016
Abstract

Approaching the ideal elastic strain limit in silicon nanowires
Zhang, Hongti and Tersoff, Jerry and Xu, Shang and Chen, Huixin and Zhang, Qiaobao and Zhang, Kaili and Yang, Yong and Lee, Chun-Sing and Tu, King-Ning and Li, Ju and others
Science Advances 2(8), e1501382, American Association for the Advancement of Science, 2016
Abstract

Novel GaAs surface phases via direct control of chemical potential
Zheng, CX and Tersoff, J and Tang, WX and Morreau, A and Jesson, DE
Physical Review B 93(19), 195314, APS, 2016
Abstract

Atomic Resolution in-situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires
Andrew D Gamalski, Jerry Tersoff, Eric A Stach
Nano Letters, ACS Publications, 2016

Interface dynamics and crystal phase switching in GaAs nanowires
Daniel Jacobsson, Federico Panciera, Jerry Tersoff, Mark C Reuter, Sebastian Lehmann, Stephan Hofmann, Kimberly A Dick, Frances M Ross
Nature 531(7594), 317--322, Nature Publishing Group, 2016

Visualizing band offsets and edge states in bilayer-monolayer transition metal dichalcogenides lateral heterojunction
Chendong Zhang, Yuxuan Chen, Jing-Kai Huang, Xianxin Wu, Lain-Jong Li, Wang Yao, Jerry Tersoff, Chih-Kang Shih
Nature communications6, Nature Publishing Group, 2016


2015

The Role of Surface Passivation in Controlling Ge Nanowire Faceting
Andrew D Gamalski, Jerry Tersoff, Suneel Kodambaka, Dmitri N Zakharov, Frances M Ross, Eric A Stach
Nano letters 15(12), 8211--8216, ACS Publications, 2015

Vapor--Liquid--Solid Etch of Semiconductor Surface Channels by Running Gold Nanodroplets
Babak Nikoobakht, Andrew Herzing, Shin Muramoto, Jerry Tersoff
Nano letters 15(12), 8360--8364, ACS Publications, 2015

End-bonded contacts for carbon nanotube transistors with low, size-independent resistance
Qing Cao, Shu-Jen Han, Jerry Tersoff, Aaron D. Franklin, Yu Zhu, Zhen Zhang, George S. Tulevski, Jianshi Tang, Wilfried Haensch
Science 350(6256), 68-72, 2015

Stable Self-Catalyzed Growth of III--V Nanowires
J Tersoff
Nano letters 15(10), 6609--6613, ACS Publications, 2015

Scaling of Device Variability and Subthreshold Swing in Ballistic Carbon Nanotube Transistors
Qing Cao, Jerry Tersoff, Shu-Jen Han, Ashish V Penumatcha
Physical Review Applied 4(2), 024022, American Physical Society, 2015

Wetting Transition for Carbon Nanotube Arrays under Metal Contacts
V Perebeinos, J Tersoff
Physical review letters 114(8), 085501, American Physical Society, 2015

Origins and Characteristics of the Threshold Voltage Variability of Quasiballistic Single-Walled Carbon Nanotube Field-Effect Transistors
Qing Cao, Shu-jen Han, Ashish V Penumatcha, Martin M Frank, George S Tulevski, Jerry Tersoff, Wilfried E Haensch
ACS nano 9(2), 1936--1944, American Chemical Society, 2015


2014

Strain-Driven Mound Formation of Substrate under Epitaxial Nanoparticles
Tanya Gupta, James B Hannon, Jerry Tersoff, Rudolf M Tromp, John A Ott, John Bruley, Daniel A Steingart
Nano letters 15(1), 34--38, American Chemical Society, 2014

Optimal Thickness for Charge Transfer in Multilayer Graphene Electrodes
MA Kuroda, J Tersoff, RA Nistor, GJ Martyna
Physical Review Applied 1, 014005, 2014

Atomic-Scale Variability and Control of III-V Nanowire Growth Kinetics
Y-C Chou, K Hillerich, J Tersoff, MC Reuter, KA Dick, FM Ross
Science 343(6168), 281--284, American Association for the Advancement of Science, 2014

Jumping-Catalyst Dynamics in Nanowire Growth
KW Schwarz, J Tersoff, S Kodambaka, FM Ross
Physical Review Letters 113(5), 055501, APS, 2014

Au transport in catalyst coarsening and Si nanowire formation
BJ Kim, J Tersoff, S Kodambaka, Ja-Soon Jang, EA Stach, FM Ross
Nano letters 14(8), 4554--4559, ACS Publications, 2014

Carbon nanotube deformation and collapse under metal contacts
V Perebeinos, J Tersoff
Nano letters 14(8), 4376--4380, ACS Publications, 2014

Equilibrium phase diagrams for the elongation of epitaxial quantum dots into hut-shaped clusters and quantum wires
I Daruka, C Grossauer, G Springholz, J Tersoff
Physical Review B 89(23), 235427, APS, 2014


2013

Symmetry breaking in shape transitions of epitaxial quantum dots
BJ Spencer, J Tersoff
Physical Review B 87(16), 161301, APS, 2013

Origin of Quantum Ring Formation During Droplet Epitaxy
ZY Zhou, CX Zheng, WX Tang, J Tersoff, DE Jesson
Physical review letters 111(3), 036102, APS, 2013

Carbon Nanotube Complementary Wrap-Gate Transistors
Aaron D Franklin, Siyuranga O Koswatta, Damon B Farmer, Joshua T Smith, Lynne Gignac, Chris M Breslin, Shu-Jen Han, George S Tulevski, Hiroyuki Miyazoe, Wilfried Haensch, others
Nano letters 13(6), 2490--2495, American Chemical Society, 2013

Schottky-to-Ohmic Crossover in Carbon Nanotube Transistor Contacts
V. Perebeinos, J. Tersoff, W. Haensch
Phys. Rev. Lett. 111(23), 236802, APS, 2013


2012

High-density integration of carbon nanotubes via chemical self-assembly
Hongsik Park, Ali Afzali, Shu-Jen Han, George S Tulevski, Aaron D Franklin, Jerry Tersoff, James B Hannon, Wilfried Haensch
Nature nanotechnology 7(12), 787--791, Nature Publishing Group, 2012

Phonon-Mediated Interlayer Conductance in Twisted Graphene Bilayers
V Perebeinos, J Tersoff, P Avouris
Phys. Rev. Lett. 109, 236604 109(23), 236604, APS, 2012

Structure and electronic transport in graphene wrinkles
Wenjuan Zhu, Tony Low, Vasili Perebeinos, Ageeth A Bol, Yu Zhu, Hugen Yan, Jerry Tersoff, Phaedon Avouris
Nano letters 12(7), 3431--3436, ACS Publications, 2012

Metastable Crystalline AuGe Catalysts Formed During Isothermal Germanium Nanowire Growth
AD Gamalski, J. Tersoff, R. Sharma, C. Ducati, S. Hofmann
Physical Review Letters 108(25), 255702, APS, 2012

Growth pathways in ultralow temperature Ge nucleation from Au
BJ Kim, C-Y Wen, J Tersoff, MC Reuter, Eric A Stach, FM Ross
Nano letters 12(11), 5867--5872, ACS Publications, 2012

Anomalous smoothing preceding island formation during growth on patterned substrates
R. Bergamaschini, J. Tersoff, Y. Tu, JJ Zhang, G. Bauer, F. Montalenti
Physical review letters 109(15), 156101, APS, 2012

Deformation and scattering in graphene over substrate steps
T Low, V Perebeinos, J Tersoff, P Avouris
Phys. Rev. Lett. 108, 096601 108(9), 96601, APS, 2012

Atomic-Scale Transport in Epitaxial Graphene
S. Ji, J.B. Hannon, R.M. Tromp, V. Perebeinos, J. Tersoff, F.M. Ross
Nature Materials11, 114-119, 2012

Multiplicity of Steady Modes of Nanowire Growth
KW Schwarz, J Tersoff
Nano letters 12(3), 1329--1332, ACS Publications, 2012


2011

Ga droplet surface dynamics during Langmuir evaporation of GaAs
W X Tang, C X Zheng, Z Y Zhou, DE Jesson, J Tersoff
IBM Journal of Research and Development 55(4), 10--1, IBM, 2011

Geometrical frustration in nanowire growth
KW Schwarz, J Tersoff, S Kodambaka, Y-C Chou, FM Ross
Physical review letters 107(26), 265502, APS, 2011

Conductance through multilayer graphene films
M A Kuroda, J Tersoff, D M Newns, G Martyna
Nano letters, ACS Publications, 2011

Nonlinear Screening in Multilayer Graphene Systems
M A Kuroda, J Tersoff, G J Martyna
Physical Review Letters 106(11), 116804, APS, 2011

Periodically changing morphology of the growth interface in Si, Ge, and GaP nanowires
C-Y Wen, J Tersoff, Karla Hillerich, MC Reuter, JH Park, S Kodambaka, EA Stach, FM Ross
Physical review letters 107(2), 025503, APS, 2011

Elementary Processes in Nanowire Growth
KW Schwarz, J Tersoff
Nano letters, ACS Publications, 2011


2010

Time evolution of the Ga droplet size distribution during Langmuir evaporation of GaAs (001)
ZY Zhou, WX Tang, DE Jesson, J Tersoff
Applied Physics Letters97, 191914, 2010

Decomposition Controlled by Surface Morphology during Langmuir Evaporation of GaAs.
J Tersoff, DE Jesson, WX Tang
Physical review letters 105(3), 035702, 2010

Formation of Metastable Liquid Catalyst during Subeutectic Growth of Germanium Nanowires
AD Gamalski, J Tersoff, R Sharma, C Ducati, S Hofmann
Nano letters, 18, ACS Publications, 2010

Suppression of Intermixing in Strain-Relaxed Epitaxial Layers
T Leontiou, J Tersoff, PC Kelires
Physical Review Letters 105(23), 236104, APS, 2010

Congruent evaporation temperature of GaAs (001) controlled by As flux
ZY Zhou, CX Zheng, WX Tang, DE Jesson, J Tersoff
Applied Physics Letters 97(12), 121912, AIP, 2010


Step-flow kinetics in nanowire growth
C-Y Wen, J Tersoff, MC Reuter, EA Stach, FM Ross
Physical review letters 105(19), 195502, APS, 2010


2009


Shaping site-controlled uniform arrays of SiGe/Si (001) islands by in situ annealing
JJ Zhang, A Rastelli, H Groiss, J Tersoff, F Sch{\"a}ffler, OG Schmidt, G Bauer
Applied Physics Letters95, 183102, 2009

Valence Force Model for Phonons in Graphene and Carbon Nanotubes
V. Perebeinos and J. Tersoff
Phys. Rev. B 79, 241409, 2009

Running Droplets of Gallium from Evaporation of Gallium Arsenide
J Tersoff, DE Jesson, WX Tang
Science 324(5924), 236, AAAS, 2009

Formation of compositionally abrupt axial heterojunctions in silicon-germanium nanowires
C-Y Wen, MC Reuter, J Bruley, J Tersoff, S Kodambaka, EA Stach, FM Ross
Science 326(5957), 1247--1250, American Association for the Advancement of Science, 2009

Determination of size effects during the phase transition of a nanoscale Au-Si eutectic
BJ Kim, J Tersoff, C-Y Wen, MC Reuter, EA Stach, FM Ross
Physical review letters 103(15), 155701, APS, 2009

From droplets to nanowires: Dynamics of vapor-liquid-solid growth
KW Schwarz, J Tersoff
Physical Review Letters 102(20), 206101, APS, 2009


2008

Positioning of Strained Islands by Interaction with Surface Nanogrooves
G Katsaros, J Tersoff, M Stoffel, A Rastelli, P Acosta-Diaz, GS Kar, G Costantini, OG Schmidt, K Kern
Physical Review Letters 101(9), 96103, APS, 2008

Kinetics of individual nucleation events observed in nanoscale vapor-liquid-solid growth
BJ Kim, J Tersoff, S Kodambaka, MC Reuter, EA Stach, FM Ross
Science 322(5904), 1070--1073, American Association for the Advancement of Science, 2008


2007

Germanium nanowire growth below the eutectic temperature
SRMC Kodambaka, J Tersoff, MC Reuter, FM Ross
Science 316(5825), 729--732, American Association for the Advancement of Science, 2007


Three-dimensional isocompositional profiles of buried SiGe/ Si (001) islands
G Katsaros, M Stoffel, A Rastelli, OG Schmidt, K Kern, J Tersoff
Applied Physics Letters91, 013112, 2007




2006

Diameter-independent kinetics in the vapor-liquid-solid growth of Si nanowires
S Kodambaka, J Tersoff, MC Reuter, FM Ross
Physical review letters 96(9), 096105, APS, 2006

Growth and surface structure of silicon nanowires observed in real time in the electron microscope
FM Ross, J Tersoff, S Kodambaka, MC Reuter
Microscopy of Semiconducting Materials: Proceedings of the 14th Conference, April 11-14, 2005, Oxford, UK, pp. 283, 2006

Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping
G Katsaros, A Rastelli, M Stoffel, G Costantini, OG Schmidt, K Kern, J Tersoff, E M{\"u}ller, H K{\"a}nel von
Applied Physics Letters89, 253105, 2006

Investigating the lateral motion of SiGe islands by selective chemical etching
G Katsaros, A Rastelli, M Stoffel, G Isella, H K{\"a}nel, AM Bittner, J Tersoff, U Denker, OG Schmidt, G Costantini, others
Surface Science 600(12), 2608--2613, Elsevier, 2006

Local equilibrium and global relaxation of strained SiGe/ Si (001) layers
M Stoffel, A Rastelli, J Tersoff, T Merdzhanova, OG Schmidt
Physical Review B 74(15), 155326, APS, 2006

Mobility in semiconducting carbon nanotubes at finite carrier density
V. Perebeinos, J. Tersoff, and Ph. Avouris
Nano Lett 6, 205 6(2), 205--208, 2006


2005

Kinetic evolution and equilibrium morphology of strained islands
A Rastelli, M Stoffel, J Tersoff, GS Kar, OG Schmidt
Physical review letters 95(2), 26103, APS, 2005

Lateral motion of SiGe islands driven by surface-mediated alloying
U Denker, A Rastelli, M Stoffel, J Tersoff, G Katsaros, G Costantini, K Kern, NY Jin-Phillipp, DE Jesson, OG Schmidt
Physical review letters 94(21), 216103, APS, 2005

Effect of exciton-phonon coupling in the calculated optical absorption of carbon nanotubes
V. Perebeinos, J. Tersoff, and Ph. Avouris
Phys. Rev. Lett. 94, 027402 94(2), 27402, APS, 2005

Sawtooth faceting in silicon nanowires
FM Ross, J Tersoff, MC Reuter
Physical review letters 95(14), 146104, APS, 2005

Electron-phonon interaction and transport in semiconducting carbon nanotubes
V Perebeinos, J Tersoff, P Avouris
Phys. Rev. Lett. 94, 086802 94(8), 86802, APS, 2005

Electromigration forces on ions in carbon nanotubes
S Heinze, N P Wang, J Tersoff
Physical review letters 95(18), 186802, APS, 2005

Radiative lifetime of excitons in carbon nanotubes
V. Perebeinos, J. Tersoff, and Ph. Avouris
Nano Lett. 5, 2495, 2005

Self-Assembled Superlattice by Spinodal Decomposition during Growth
I Daruka, J Tersoff
Physical review letters 95(7), 76102, APS, 2005

Carbon nanotube electronics and optoelectronics
S Heinze, J Tersoff, P Avouris
LECTURE NOTES IN PHYSICS-NEW YORK THEN BERLIN-680, 381, Springer, 2005

Device modeling of long-channel nanotube electro-optical emitter
J Tersoff, M Freitag, J C Tsang, P Avouris
Applied Physics Letters86, 263108, 2005


2004

Mobile ambipolar domain in carbon-nanotube infrared emitters
M Freitag, J Chen, J Tersoff, J C Tsang, Q Fu, J Liu, P Avouris
Physical review letters 93(7), 76803, APS, 2004

Scaling of excitons in carbon nanotubes
V Perebeinos, J Tersoff, Ph. Avouris
Phys. Rev. Lett. 92, 257402 92(25), 257402, APS, 2004


Self-Organized Quantum-Wire Lattice via Step Flow Growth of a Short-Period Superlattice
L Bai, J Tersoff, F Liu
Physical review letters 92(22), 225503, APS, 2004


2003

An off-normal fibre-like texture in thin films on single-crystal substrates
Christophe Detavernier, AS \"Ozcan, J Jordan-Sweet, EA Stach, J Tersoff, FM Ross, C Lavoie
Nature 426(6967), 641--645, Nature Publishing Group, 2003

Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors
S Heinze, M Radosavljevi{'c}, J Tersoff, P Avouris
Physical Review B 68(23), 235418, APS, 2003

Drain voltage scaling in carbon nanotube transistors
M Radosavljevi{'c}, S Heinze, J Tersoff, P Avouris
Applied Physics Letters83, 2435, 2003

Electrically induced optical emission from a carbon nanotube FET
JA Misewich, R Martel, P Avouris, JC Tsang, S Heinze, J Tersoff
Science 300(5620), 783, AAAS, 2003

Electrostatic engineering of nanotube transistors for improved performance
S Heinze, J Tersoff, P Avouris
Applied Physics Letters83, 5038, 2003

Competing step instabilities at surfaces under stress
F L{'e}onard, J Tersoff
Applied Physics Letters83, 72, 2003


Prepyramid-to-pyramid transition of SiGe islands on Si (001)
A Rastelli, H Von K{\"a}nel, BJ Spencer, J Tersoff
Physical Review B 68(11), 115301, APS, 2003


2002

Surface stress and thermodynamic nanoscale size selection
JB Hannon, J. Tersoff, RM Tromp
Science 295(5553), 299--301, American Association for the Advancement of Science, 2002

Barrierless formation and faceting of SiGe islands on Si (001)
J Tersoff, BJ Spencer, A Rastelli, H Von K{\"a}nel
Physical Review Letters 89(19), 196104, APS, 2002

Carbon nanotubes as Schottky barrier transistors
S Heinze, J Tersoff, R Martel, V Derycke, J Appenzeller, P Avouris
Physical Review Letters 89(10), 106801, APS, 2002

Influence of supersaturation on surface structure
JB Hannon, J Tersoff, MC Reuter, RM Tromp
Physical review letters 89(26), 266103, APS, 2002

Dielectric response of semiconducting carbon nanotubes
F L{'e}onard, J Tersoff
Applied Physics Letters81, 4835, 2002


Multiple functionality in nanotube transistors
F L{'e}onard, J Tersoff
Physical review letters 88(25), 258302, APS, 2002

Kinetic effects in heteroepitaxial growth
J Tersoff
Applied Surface Science 188(1-2), 1--3, Elsevier, 2002

Existence of shallow facets at the base of strained epitaxial islands
I Daruka, J Tersoff
Physical Review B 66(13), 132104, APS, 2002

Microscopic dynamics of silicon oxidation
Y Tu, J Tersoff
Physical review letters 89(8), 86102, APS, 2002


2001



Ambipolar electrical transport in semiconducting single-wall carbon nanotubes
R Martel, V Derycke, C Lavoie, J Appenzeller, KK Chan, J Tersoff, P Avouris
Physical Review Letters 87(25), 256805, APS, 2001

Structure of the silicon--oxide interface
Y Tu, J Tersoff
Thin Solid Films 400(1-2), 95--100, Elsevier, 2001

Phase Coexistence During Surface Phase Transitions
J.B. Hannon, F.-J. Meyer zu Heringdorf, J. Tersoff, and R.M. Tromp
Phys. Rev. Lett86, 4871, 2001

Facet Growth under Stress: The Limits of Strained-Layer Stability
J Tersoff
Physical Review Letters 87(15), 156101, APS, 2001


2000

Negative differential resistance in nanotube devices
F L{'e}onard, J Tersoff
Physical Review Letters 85(22), 4767--4770, APS, 2000

Enhanced instability of strained alloy films due to compositional stresses
BJ Spencer, PW Voorhees, J Tersoff
Physical Review Letters 84(11), 2449--2452, APS, 2000

Role of Fermi-level pinning in nanotube Schottky diodes
F L{'e}onard, J Tersoff
Physical Review Letters 84(20), 4693--4696, APS, 2000

Structure and Energetics of the Si-SiO\_ $\{$2$\}$ Interface
Y Tu, J Tersoff
Physical Review Letters 84(19), 4393--4396, APS, 2000

Nonuniform Composition Profile in In\_ $\{$0.5$\}$ Ga\_ $\{$0.5$\}$ As Alloy Quantum Dots
N Liu, J Tersoff, O Baklenov, AL Holmes Jr, CK Shih
Physical review letters 84(2), 334--337, APS, 2000

Dynamically stable growth of strained-layer superlattices
LE Shilkrot, DJ Srolovitz, J Tersoff
Applied Physics Letters77, 304, 2000

Morphology evolution during the growth of strained-layer superlattices
LE Shilkrot, DJ Srolovitz, J Tersoff
Physical Review B 62(12), 8397--8409, APS, 2000

Stabilization of strained alloy film growth by a difference in atomic mobilities
BJ Spencer, PW Voorhees, J Tersoff
Applied Physics Letters76, 3022, 2000

Instability wavelength in strained-alloy epitaxy
J Tersoff
Physical Review Letters 85(13), 2843--2843, APS, 2000

Dislocation energetics in epitaxial strained islands
BJ Spencer, J Tersoff
Applied Physics Letters77, 2533, 2000


1999

Shape transition in growth of strained islands
I Daruka, J Tersoff, A L Barab{'a}si
Physical review letters 82(13), 2753--2756, APS, 1999

Novel length scales in nanotube devices
F L{'e}onard, J Tersoff
Physical Review Letters 83(24), 5174--5177, APS, 1999

Self-organized growth of alloy superlattices
P Venezuela, J Tersoff, JA Floro, E Chason, DM Follstaedt, F Liu, MG Lagally
Nature 397(6721), 678--681, Nature Publishing Group, 1999

Contact resistance of carbon nanotubes
J Tersoff
Applied Physics Letters74, 2122, 1999

Island growth of Ge on Si (001) and CoSi sub 2 on Si (111) studied with UHV electron microscopy
FM Ross, J Tersoff, RM Tromp, MC Reuter, P Bennett
Journal of Electron Microscopy(USA)48, 1059--1066, 1999

Growth kinetics of CoSi2 and Ge islands observed with in situ transmission electron microscopy
FM Ross, PA Bennett, RM Tromp, J Tersoff, M Reuter
Micron 30(1), 21--32, Elsevier, 1999


1998

Properties of a continuous-random-network model for amorphous systems
Y Tu, J Tersoff, G Grinstein, D Vanderbilt
Physical Review Letters 81(22), 4899--4902, APS, 1998

Enhanced nucleation and enrichment of strained-alloy quantum dots
J Tersoff
Physical Review Letters 81(15), 3183--3186, APS, 1998

Coarsening of self-assembled Ge quantum dots on Si (001)
FM Ross, J Tersoff, RM Tromp
Physical review letters 80(5), 984, APS, 1998

Self-organization of steps in growth of strained films on vicinal substrates
F Liu, J Tersoff, MG Lagally
Physical Review Letters 80(6), 1268--1271, APS, 1998

Alloy decomposition during growth due to mobility differences
P Venezuela, J Tersoff
Physical Review B 58(16), 10871--10874, APS, 1998


Effect of curvature and stress on reaction rates at solid interfaces
J Tersoff, Y Tu, G Grinstein
Applied Physics Letters73, 2328, 1998

Equilibrium shapes of islands in epitaxially strained solid films
B J Spencer, J Tersoff
Institute for Mathematics and Its Applications99, 255, 1998

Ostwald ripening of self-assembled germanium islands on silicon (100)
FM Ross, J Tersoff, RM Tromp
Microscopy and Microanalysis 4(03), 254--263, Cambridge Univ Press, 1998

In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on Si
FM Ross, J Tersoff, M Reuter, FK LeGoues, RM Tromp
Microscopy research and technique 42(4), 281--294, Wiley Online Library, 1998

Surface stress and self-organization of steps
J Tersoff
Physical Review Letters 80(9), 2018--2018, APS, 1998

Stability of solid state reaction fronts
G Grinstein, Y Tu, J Tersoff
Physical Review Letters 81(12), 2490--2493, APS, 1998


1997

Adatom densities on GaAs: Evidence for near-equilibrium growth
J Tersoff, MD Johnson, BG Orr
Physical Review Letters 78(2), 282--285, APS, 1997

Equilibrium shapes and properties of epitaxially strained islands
BJ Spencer, J Tersoff
Physical Review Letters 79(24), 4858--4861, APS, 1997

Spinodal decomposition during step-flow growth
J Tersoff
Physical Review B 56(8), 4394--4397, APS, 1997

Continuum Theory for Strained Epitaxial Islands
J Tersoff
Physical Review Letters 79(24), 4934--4934, APS, 1997


1996


In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth. I. Si (001)/Ge
M Hammar, FK LeGoues, J Tersoff, MC Reuter, RM Tromp
Surface science 349(2), 129--144, Elsevier Science, 1996

Stress-Driven Alloy Decomposition during Step-Flow Growth
J Tersoff
Physical review letters 77(10), 2017--2020, APS, 1996

Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films
C Teichert, MG Lagally, LJ Peticolas, JC Bean, J Tersoff
Physical Review B 53(24), 16334--16337, APS, 1996

Self-organization in growth of quantum dot superlattices
J Tersoff, C Teichert, MG Lagally
Physical review letters 76(10), 1675--1678, APS, 1996


Stress-induced roughening in epitaxial growth
J Tersoff
Applied Surface Science102, 1--2, Elsevier, 1996

Atomic scale studies of epitaxial growth processes using X-ray techniques
DW Kisker, GB Stephenson, J Tersoff, PH Fuoss, S Brennan
Journal of crystal growth 163(1-2), 54--59, Elsevier, 1996


1995

Relaxation mechanism of Ge islands/Si (001) at low temperature
FK LeGoues, J Tersoff, MC Reuter, M Hammar, R Tromp
Applied physics letters 67(16), 2317--2319, AIP Publishing, 1995

Step energies and roughening of strained layers
J Tersoff
Physical review letters 74(24), 4962--4962, APS, 1995


Surface-confined alloy formation in immiscible systems
J Tersoff
Physical review letters 74(3), 434--437, APS, 1995

Step-bunching instability of vicinal surfaces under stress
J Tersoff, YH Phang, Z Zhang, MG Lagally
Physical review letters 75(14), 2730--2733, APS, 1995


1994

Facet formation in strained Si< sub> 1- x Ge< sub> x films
MA Lutz, RM Feenstra, PM Mooney, J. Tersoff, JO Chu
Surface science 316(3), L1075--L1080, Elsevier, 1994

Nucleation of dislocations in SiGe layers grown on (001) Si
PM Mooney, FK LeGoues, J Tersoff, JO Chu
Journal of Applied Physics75, 3968, 1994

Chemical order in amorphous silicon carbide
J Tersoff
Physical Review B 49(23), 16349--16352, APS, 1994

Cyclic growth of strain-relaxed islands
FK LeGoues, MC Reuter, J Tersoff, M Hammar, RM Tromp
Physical review letters 73(2), 300, APS, 1994

Critical island size for layer-by-layer growth
J Tersoff, AW Denier van der Gon, RM Tromp
Physical review letters 72(2), 266--269, APS, 1994

Structural properties of a carbon-nanotube crystal
J Tersoff, RS Ruoff
Physical review letters 73(5), 676--679, APS, 1994

Competing relaxation mechanisms in strained layers
J Tersoff, FK LeGoues
Physical review letters 72(22), 3570--3573, APS, 1994

Facet formation in strained Si1- x Gex films
MA Lutz, RM Feenstra, PM Mooney, J Tersoff, JO Chu
Surface Science 316(3), 1075--1080, Elsevier, 1994

Calculation of temperature effects on the equilibrium crystal shape of Si near (100)
S Mukherjee, E Pehlke, J Tersoff
Physical Review B 49(3), 1919--1927, APS, 1994


1993

Measurement of the activation barrier to nucleation of dislocations in thin films
FK LeGoues, PM Mooney, J Tersoff
Physical review letters 71(3), 396--399, APS, 1993

Radial deformation of carbon nanotubes by van der Waals forces
R S Ruoff, J Tersoff, D C Lorents, S Subramoney, B Chan
Nature 364(6437), 514--516, 1993

Shape transition in growth of strained islands: Spontaneous formation of quantum wires
J Tersoff, RM Tromp
Physical review letters 70(18), 2782--2785, APS, 1993



Equilibrium crystal shape of silicon near (001)
J Tersoff, E Pehlke
Physical Review B 47(7), 4072--4075, APS, 1993

Shape oscillations in growth of small crystals
J Tersoff, AW Denier van der Gon, RM Tromp
Physical review letters 70(8), 1143--1146, APS, 1993


1992

Missing dimers and strain relief in Ge films on Si (100)
J Tersoff
Physical Review B 45(15), 8833--8836, APS, 1992

Elastic properties of a network model of glasses
DS Franzblau, J Tersoff
Physical review letters 68(14), 2172--2175, APS, 1992

Energies of fullerenes
J Tersoff
Physical Review B 46(23), 15546--15549, APS, 1992

Negative-curvature fullerene analog of C\_ $\{$60$\}$
D Vanderbilt, J Tersoff
Physical review letters 68(4), 511--513, APS, 1992

Sinuous step instability on the Si (001) surface
J Tersoff, E Pehlke
Physical review letters 68(6), 816--819, APS, 1992


1991

Nature of the step-height transition on vicinal Si (001) surfaces
E Pehlke, J Tersoff
Physical review letters 67(4), 465--468, APS, 1991

Stress-induced layer-by-layer growth of Ge on Si (100)
J Tersoff
Physical Review B 43(11), 9377--9380, APS, 1991

Phase diagram of vicinal Si (001) surfaces
E Pehlke, J Tersoff
Physical review letters 67(10), 1290--1293, APS, 1991



1990

Surface-stress-induced order in SiGe alloy films
FK LeGoues, VP Kesan, SS Iyer, J Tersoff, R Tromp
Physical review letters 64(17), 2038--2041, APS, 1990

Carbon defects and defect reactions in silicon
J Tersoff
Physical review letters 64(15), 1757--1760, APS, 1990


Forces on charged defects in semiconductor heterostructures
J Tersoff
Physical Review Letters 65(7), 887--890, APS, 1990



Tip-dependent corrugation of graphite in scanning tunneling microscopy
J Tersoff, ND Lang
Physical review letters 65(9), 1132--1135, APS, 1990


1989



Evidence for a large valence-band offset at HgTe-CdTe heterojunctions
J Tersoff
Physical Review B 40(15), 10615--10616, APS, 1989

Sample-dependent resolution in scanning tunneling microscopy
J Tersoff
Physical Review B 39(2), 1052--1057, APS, 1989



1988






1987

Atom-selective imaging of the GaAs (110) surface
RM Feenstra, J A Stroscio, J Tersoff, AP Fein
Physical review letters 58(12), 1192--1195, APS, 1987


Strain and the interpretation of band-lineup measurements
J Tersoff, C G Van de Walle
Physical Review Letters 59(8), 946--946, APS, 1987

‘‘Pinning’’of energy levels of transition-metal impurities
J Tersoff, W A Harrison
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures 5(4), 1221--1224, 1987


1986


Tight-binding theory of heterojunction band lineups and interface dipoles
WA Harrison, J Tersoff
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures4, 1068, 1986

Band lineups at II-VI heterojunctions: Failure of the common-anion rule
J Tersoff
Physical review letters 56(25), 2755--2758, APS, 1986

New empirical model for the structural properties of silicon
J Tersoff
Physical review letters 56(6), 632--635, APS, 1986


Tunneling microscopy study of the graphite surface in air and water
J Schneir, R Sonnenfeld, PK Hansma, J Tersoff
Physical Review B 34(8), 4979--4984, APS, 1986

Reference levels for heterojunctions and Schottky barriers
J Tersoff
Physical Review Letters 56(6), 675--675, APS, 1986


1985

Schottky barriers and semiconductor band structures
J Tersoff
Physical Review B 32(10), 6968--6971, APS, 1985

Theory of the scanning tunneling microscope
J Tersoff, DR Hamann
Physical Review B 31(2), 805--813, APS, 1985

Interaction of helium with a corrugated surface
J Tersoff
Physical Review Letters 55(1), 140--140, APS, 1985

Sensitivity of helium diffraction to surface geometry
J Tersoff, MJ Cardillo, DR Hamann
Physical Review B 32(8), 5044--5050, APS, 1985

Recent models of Schottky barrier formation
J Tersoff
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures3, 1157, 1985


1984


Schottky barrier heights and the continuum of gap states
J Tersoff
Physical Review Letters 52(6), 465--468, APS, 1984


1983

Nonlifetime effects in photoemission linewidths
J Tersoff, SD Kevan
Physical Review B 28(8), 4267--4271, APS, 1983

Scanning tunneling microscopy
Gerd Binnig, Heinrich Rohrer
Surface Science 126(1), 236-244, 1983

Bonding and structure of CoSi\_ $\{$2$\}$ and NiSi\_ $\{$2$\}$
J Tersoff, DR Hamann
Physical Review B 28(2), 1168--1170, APS, 1983

Quantum statistics for distinguishable particles
J Tersoff, D Bayer
Physical Review Letters 50(8), 553--554, APS, 1983


1982

Magnetic and electronic properties of Ni films, surfaces, and interfaces
J Tersoff, LM Falicov
Physical Review B 26(11), 6186--6200, APS, 1982

Calculation of magnetization in ordered Ni-Cu alloys
J Tersoff, LM Falicov
Physical Review B 25(8), 4937--4942, APS, 1982

Presence and absence of magnetism in thin Ni films
J Tersoff, LM Falicov
Physical Review B 26(1), 459--461, APS, 1982

Interface magnetization: Cu films on Ni (100)
J Tersoff, LM Falicov
Physical Review B 25(4), 2959--2961, APS, 1982