Thomas N. Theis  Thomas N. Theis photo       

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Distinguished Research Staff Member
Thomas J. Watson Research Center, Yorktown Heights, NY USA
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Professional Associations

Professional Associations:  American Physical Society (APS)  |  IEEE


2010


It's Time to Reinvent the Transistor!
T.N. Theis and P.M. Solomon
Science, Vol. 327, No. 5973, pp. 1591-1593 327(5973), 1591-1593 , 2010


2004

How IBM sustains the leading edge
T.N. Theis and H.J. Coufal
Industrial Physicist, April/May, pp. 18-23 10(2), 18-23, AMERICAN INSTITUTE OF PHYSICS, 2004


2003

Beyond the silicon transistor: personal observations
Thomas Theis
Computing in Science & Engineering, Vol. 5, Issue 1, pp. 25-29 5(1), 2003

Basic Research in the Information Technology Industry
T.N. Theis and P.M. Horn
Physics Today, Vol. 56, Issue 7, pp. 44-49, 2003


2001

Information Technology Based on a Mature Nanotechnology: Some Societal Implications
Thomas N. Theis
Societal Implications of Nanoscience and Nanotechnology, edited by M.C. Roco and W.S. Bainbridge, pp. 74-83, pp. 74-83, 2001


2000

The Future of Interconnection Technology
T.N. Theis
IBM Journal of Rearch and Development, Vol. 44, Issue 3, 379-390 44(3), 379-390, 2000


1999

Challenges in the extension of hierarchical wiring systems
T.N. Theis
(Interconnect and Contact Metallization Symposium, San Diego, CA, 04/05/1998) Proceedings of the Electrochemical Society, Vol. 6, pp. 1-116, 1-11, 1999


1998

Technology challenges for advanced interconnects
J.G. Ryan, J.E. Heidenreich, W.J. Cote, R.M. Geffken and T.N. Theis
Advanced Metallization and Interconnect Systems for ULSI Applications in 1997; San Diego, CA. 30 Sept.-2 Oct. 1997. pp. 399-404, 1998


1995

XAS study of Sn-related DX centers in (Al, Ga) As
J. Pant, L.B. Lurioa, T.M. Hayes, D.L. Williamson, P. Gibart and T.N. Theis
Physica B: Condensed Matter, Vols. 208-209, 515-516208-209, 515-516, 1995

Characterization of lattice strain from DX centers and persistent photocarriers in GaAlAs
GS Cargill, A Segmller, TN Theis
Materials Chemistry & Physics, 1995 - Elsevier


1993

Evolution of Sn Environment in AlGaAs Alloys
J. Pant, K. Pansewicz, J. Zhang, T.M. Hayes, D.L. Williamson, T.N. Theis, T.F. Kuech, and P. Gibart
Jap. J. Appl. Phys., Part 1, 32, 731-735, 1993


1992

Scaling magnetoresistance induced by superconducting contacts in n-type GaAs
R.G. Mani, L Ghenim, and T.N. Theis
Phys. Rev. B, Vol. 45, Issue 20, pp. 12098-12101 45(20), 12098-12101, 1992

Limitations of Ion Channeling for the Study of Bistable Defects
T.N. Theis, A.D. Marwick, T.F. Kuech, and B.D. Parker
Materials Science Forum, 83-87, 847, 1992

Lattice strain from DX centers and persistent photocarriers in Sn-doped and Si-doped Ga(1-x)Al(x)As
GS Cargill III, A Segmller, TF Kuech, TN Theis
Phys. Rev. B 46, 10078-10085 46(16), 10078-10085, 1992

The DX Center: A New Picture of Substitutional Donors in Compound Semiconductors
P.M. Mooney and T.N. Theis
Comments on Condensed Matter Physics, Vol. 16, No. 3, 167-190, 1992


1991

The DX center: How complicated can a point defect be?
TN Theis
Mat. Res. Soc. Symp. Proc. Vol. 209 , 1991

Effect of local alloy disorder on the emission kinetics of deep donors (DX centers) in Al x Ga 1-x As
PM Mooney, E Calleja, TN Theis
Journal of Electronic Materials, Vol. 20, No. 1, 23-33 20(2), 23-33, 1991

Bistability of the DX center in GaAs and Al x Ga 1-x As, and experimental tests for negative U of the DX level
TN Theis, PM Mooney, BD Parker
Journal of Electronic Materials, Vol. 20, No. 1, 35-48 20(1), 35-48, 1991


1990


Exponential thermal emission transients from DX centers in heavily Si doped GaAs
E Calleja, PM Mooney, TN Theis, SL Wright
Applied Physics Letters, 1990 - link.aip.org


1988


Shallow Impurities in Semiconductors
TN Theis
Inst. Phys. Conf. Ser, 1988



Noise spectroscopy of deep level (DX) centers in GaAs/AlGaAs heterostructures
JR Kirtley, TN Theis, PM Mooney, SL Wright
J. Appl. Phys.63, 1988


1987

Charge trapping in n-AlxGa1-xAs and related device instabilities
TN Theis and BD Parker
Applied Surface Science, Vol. 30, Issues 1-4, 52-63 30(1-4), 52-63, 1987


1986

Metastable States of the DX Center in AlxGa1-xAs
T.N. Theis
Materials Science Forum, 10-12, 393, 1986

Voltage-controlled dissipation in the quantum Hall effect in a laterally constricted two-dimensional electron gas
J.R. Kirtley, Z. Schlesinger, T.N. Theis, F.P. Milliken, S.L. Wright, and L.F. Palmateer
Phys. Rev. B 34, 5414-5422 34(8), 5414-5422, 1986

Low-voltage breakdown of the quantum Hall state in a laterally constricted two-dimensional electron gas
J.R. Kirtley, Z. Schlesinger, T.N. Theis, F.P. Milliken, S.L. Wright, and L.F. Palmateer
Phys. Rev. B 34, 1384-1387 34, 1384-1387, 1986


Hot electron capture to DX centers in AlGaAs at low Al mole fractions (x< 0.2)
TN Theis, BD Parker, PM Solomon, SL Wright
J. Appl. Phys., 1986


1985

Electron heating in silicon dioxide and off-stoichiometric silicon dioxide films
DJ DiMaria, TN Theis, JR Kirtley, FL Pesavento, DW Dong, and SD Brorson
J. Appl. Phys.57, 1214 - 1238, 1985

Theory of high-field electron transport in silicon dioxide
MV Fischetti, DJ DiMaria, SD Brorson, TN Theis, JR …
Physical Review B, 1985 - APS


1984

Far-infrared Spectroscopy of Silicon Donors in AlxGa1-xAs
T.N. Theis, T.F. Kuech, L.F. Palmeteer, and P.M. Mooney
Proc. of the 11th International Conference on GaAs and Related Compounds, Biarritz, Vol. 74, Inst. of Physics, 1984

Electroluminescence studies in silicon dioxide films containing tiny silicon islands
DJ DiMaria, JR Kirtley, EJ Pakulis, DW Dong, TS Kuan, FL Pesavento, TN Theis, JA Cutro, SD Brorson
J. Appl. Phys. 56(2), 401-416, 1984

Strong Electric Field Heating of Conduction-Band Electrons in SiO_ {2}
TN Theis, DJ DiMaria, JR Kirtley, DW Dong
Phys. Rev. Lett. 52(16), 1445-1448, 1984


1983

Charge transport and trapping phenomena in off-stoichiometric silicon dioxide films
DJ Dimaria, DW Dong, C Falcony, TN Theis, JR Kirtley, JC Tsang, DR Young, FL Pesavento, and SD Brorson
J. Appl. Phys. 54(10), 5801 - 5827, 1983

Intersubband resonances in sosmos accumulation layers
M.J. Uren, T.N. Theis and F.F. Fang
Solid State Communications, Vol. 45, Issue 7, 581-583 45(7), 581-583, 1983

Light Emission from Electron-Injector Structures
TN Theis, JR Kirtley, DJ DiMaria, DW Dong
Phys. Rev. Lett. 50(10), 750-754, 1983

Hot-electron picture of light emission from tunnel junctions
JR Kirtley, TN Theis, JC Tsang, DJ DiMaria
Physical Review B, 1983 - APS


1982

Surface-enhanced Raman scattering from molecules in tunnel junctions
JC Tsang, JR Kirtley, TN Theis, and SS Jha
Phys. Rev. B 25, 5070-5089J 25(8), 5070-5089, 1982

Vibrational modes in K Na x Zn beta-gallate
G. Burns, T.N. Theis, G.V. Chandrashekhar, and F.H. Dacol
Phys. Rev. B 26, 3309-3311 26(6), 3309-3311, 1982

Tunnel Junction Structures
JR Kirtely, TC Tsang, TN Theis
Surface Enhanced Raman Scattering, 1982

Long and short range effects in surface enhanced Raman scattering
JC Tsang, JR Kirtley, TN Theis
J. Chem. Phys. 77, 641-646 77, 641-646, 1982


1981

Light emission from tunnel junctions on gratings
J Kirtley, TN Theis, JC Tsang
Physical Review B, 1981 - APS


1980

Surface plasmon polariton contributions to strokes emission from molecular monolayers on periodic Ag surfaces
J.C. Tsang, J.R. Kirtley, and T.N. Theis
Solid State Communications 35, 667-670 35(9), 667-670, 1980

Surface Enhanced Raman Scattering from Tunnel Junction Structures
JR Kirtley, JC Tsang, Thomas Theis, SS Jha
Proceedings of the International Conference on Raman Spectroscopy, 1980

Diffraction-grating-enhanced light emission from tunnel junctions
JR Kirtley, TN Theis, JC Tsang
Applied Physics Letters, 1980 - link.aip.org

Plasmons in inversion layers
TN Theis
Surface Science, 1980 - Elsevier


1978


High frequency conductivity of two-dimensional electrons in a superlattice
T Cole, JP Kotthaus, TN Theis, PJ Stiles
Surface Science, 1978 - Elsevier




1977

Two-Dimensional Magnetoplasmon in the Si Inversion Layer
TN Theis, JP Kotthaus, PJ Stiles
Solid State Communications, 1977