Jie Yang  Jie Yang photo       

contact information

Device Engineer for 7nm/10nm R&D
Albany, Malta
  +1dash203dash843dash4211

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Professional Associations

Professional Associations:  American Physical Society (APS)  |  IEEE Electron Devices Society (EDS)  |  IEEE Member  |  Sigma Xi

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More information:  Google Scholar


2017

SiGe FinFET for practical logic libraries by mitigating local layout effect
Tsutsui, Gen and Zhou, Huimei and Greene, Andrew and Robison, Robert and Yang, Jie and Li, Juntao and Prindle, Christopher and Sporre, John R and Miller, Eric R and Liu, Derrick and others
VLSI Technology, 2017 Symposium on, pp. T122--T123
Abstract


2016

Sub-10E-9 ohm-cm2 n-Type Contact Resistivity for FinFET Technology
Hiroaki Niimi, Zuoguang Liu, Oleg Gluschenkov, Shogo Mochizuki, Jody Fronheiser, Juntao Li, James Demarest, Chen Zhang, Bei Liu, Jie Yang, Mark Raymond, Bala Haran, Huiming Bu, Tenko Yamashita
IEEE Electron Device Letters 37(11), 1371-1374, IEEE, 2016

Technology viable DC performance elements for Si/SiGe channel CMOS FinFET
Gen Tsutsui, Ruqiang Bao, Kwan-yong Lim, Robert R Robison, Reinaldo A Vega, Jie Yang, Zuoguang Liu, et al
Electron Devices Meeting (IEDM), 2016 IEEE International, pp. 17.4. 1-17.4. 4, IEEE

Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors
Chang, Sung-Jae and Kang, Hee-Sung and Lee, Jae-Hoon and Yang, Jie and Bhuiyan, Maruf and Jo, Young-Woo and Cui, Sharon and Lee, Jung-Hee and Ma, Tso-Ping
Japanese Journal of Applied Physics 55(4), 044104, IOP Publishing, 2016
Abstract

FinFET performance with Si: P and Ge: Group-III-Metal metastable contact trench alloys
O Gluschenkov, Zuoguang Liu, H Niimi, S Mochizuki, J Fronheiser, X Miao, J Li, J Demarest, C Zhang, C Niu, B Liu, A Petrescu, P Adusumilli, J Yang, H Jagannathan, H Bu, T Yamashita
Electron Devices Meeting (IEDM), 2016 IEEE International, pp. 17.2. 1-17.2. 4, IEEE


2015

Gallium Nitride-Based Transistors and Associated Gate Stacks
Yang, Jie
2015 - search.proquest.com, Yale University
Abstract


2013

Determination of trap energy levels in AlGaN/GaN HEMT
Yang, Jie and Cui, Sharon and Ma, TP and Hung, Ting-Hsiang and Nath, Digbijoy and Krishnamoorthy, Sriram and Rajan, Siddharth
Device Research Conference (DRC), 2013 71st Annual, pp. 79--80
Abstract

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors
Yang, Jie and Cui, Sharon and Ma, TP and Hung, Ting-Hsiang and Nath, Digbijoy and Krishnamoorthy, Sriram and Rajan, Siddharth
Applied Physics Letters 103(22), 223507, AIP, 2013
Abstract

A study of electrically active traps in AlGaN/GaN high electron mobility transistor
Yang, Jie and Cui, Sharon and Ma, TP and Hung, Ting-Hsiang and Nath, Digbijoy and Krishnamoorthy, Sriram and Rajan, Siddharth
Applied Physics Letters 103(17), 173520, AIP, 2013
Abstract

Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen
Long, RD and Jackson, CM and Yang, J and Hazeghi, A and Hitzman, C and Majety, S and Arehart, AR and Nishi, Y and Ma, TP and Ringel, SA and others
Applied Physics Letters 103(20), 201607, AIP, 2013
Abstract


2011

Effect of H on interface properties of Al2O3/In0. 53Ga0. 47As
Liu, Zuoguang and Cui, Sharon and Shekhter, Pini and Sun, Xiao and Kornblum, Lior and Yang, Jie and Eizenberg, Moshe and Chang-Liao, KS and Ma, TP
Applied Physics Letters 99(22), 222104, AIP, 2011
Abstract


2010

High-Quality Al2O3 for for Low-Voltage High-Speed High-Temperature up to 250C Nonvolatile Memory Technology
Cui, Sharon and Peng, Cheng-Yi and Zhang, Wenqi and Sun, Xiao and Yang, Jie and Liu, Zuoguang and Kornblum, Lior and Eizenberg, Moshe and Ma, TP
IEEE Electron Device Letters 31(12), 1443--1445, IEEE, 2010
Abstract


2008

A compact model of silicon-based nanowire MOSFETs for circuit simulation and design
Yang, Jie and He, Jin and Liu, Feng and Zhang, Lining and Liu, Feilong and Zhang, Xing and Chan, Mansun
IEEE transactions on electron devices 55(11), 2898--2906, IEEE, 2008
Abstract