Huimei Zhou  Huimei Zhou photo       

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Research Scientist
IBM Resarch, Albany, NY, USA
  +1dash518dash292dash7434

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2012

High-density Co/Al 2 O 3 core-shell nanocrystal memory
Zhou, Huimei and Li, Zonglin and Huang, Jian and Liu, Jianlin
MRS Proceedings, pp. mrss12--1430, 2012

Design and analysis of new silicided nano crystal dots field programmable ESD protection structures in BiCMOS
Ma, Rui and Shi, Zitao and Wang, Xin and Liu, Jian and Zhao, Hui and Wang, Li and Dong, Zongyu and Zhang, Chen and Lin, Lin and Zhou, Huimei and others
2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 1--4

Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores.
Rahman, Rajib and Neupane, Mahesh R and Zhou, Huimei and Liu, Jianlin and Lake, Roger K
Technical Report, Sandia National Laboratories, 2012

Rapid thermal oxygen annealing formation of nickel silicide nanocrystals for nonvolatile memory
Zhou, Huimei and Li, Zonglin and Zheng, Jian-Guo and Liu, Jianlin
Applied Physics A 109(3), 535--538, Springer, 2012

Novel Nanocrystal Floating Gate Memory
Zhou, Huimei
2012 - escholarship.org

Temperature-dependent electron transport in highly ordered Co/Al2O3 core-shell nanocrystal memory synthesized with di-block co-polymers
Zhou, Huimei and Dorman, James A and Perng, Ya-Chuan and Chang, Jane P and Liu, Jianlin
Journal of Applied Physics 111(6), 064505, AIP Publishing, 2012

Strong room-temperature ferromagnetism of high-quality lightly Mn-doped ZnO grown by molecular beam epitaxy
Zuo, Zheng and Zhou, Huimei and Olmedo, Mario J and Kong, Jieying and Beyermann, Ward P and Zheng, Jian-Guo and Xin, Yan and Liu, Jianlin
Journal of Applied Physics 112(5), 053708, AIP Publishing, 2012

Nonplanar nisi nanocrystal floating-gate memory based on a triangular-shaped Si nanowire array for extending nanocrystal memory scaling limit
Ren, Jingjian and Li, Bei and Zheng, Jian-Guo and Olmedo, Mario and Zhou, Huimei and Shi, Yi and Liu, Jianlin
IEEE Electron Device Letters 33(10), 1390, 2012


2011

Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy
Yang, Z and Zuo, Z and Zhou, HM and Beyermann, WP and Liu, JL
Journal of Crystal Growth 314(1), 97--103, North-Holland, 2011

Thermal annealing effect on spin coherence in ZnO single crystals
Yang, Z and Li, Y and Look, DC and Zhou, HM and Chen, WV and Kawakami, RK and Yu, PKL and Liu, JL
Journal of Applied Physics 110(1), 016101, AIP Publishing, 2011

Memory characteristics of ordered Co/Al 2 O 3 core-shell nanocrystal arrays assembled by diblock copolymer process
Zhou, Huimei and Dorman, James A and Perng, Ya-Chuan and Gachot, Stephanie and Zheng, Jian-Guo and Chang, Jane P and Liu, Jianlin
Applied Physics Letters98, 192107, 2011

Carbon Nanotube Memory by the Self-Assembly of Silicon Nanocrystals as Charge Storage Nodes
Olmedo, Mario and Wang, Chuan and Ryu, Koungmin and Zhou, Huimei and Ren, Jingjian and Zhan, Ning and Zhou, Chongwu and Liu, Jianlin
ACS nano 5(10), 7972--7977, ACS Publications, 2011

Nanocrystal Metal Oxide Semiconductor Field Effect Transistor Memory
Zhou, Huimei and Li, Bei and Yang, Zheng and Zhan, Ning and Yan, Dong and Lake, Roger K and Liu, Jianlin
IEEE Transactions on Nanotechnology 10(3), 499--505, IEEE, 2011

Synthesis and characterization of Ag-doped p-type ZnO nanowires
Wang, Guoping and Chu, Sheng and Zhan, Ning and Zhou, Huimei and Liu, Jianlin
Applied Physics A 103(4), 951--954, Springer, 2011


2010

Co/HfO2 core shell nanocrystal memory
Zhou, Huimei and Dorman, James Anthony and Perng, Ya-Chuan and Gachot, Stephanie and Huang, Jian and Mao, Yuanbing and Chang, Jane and Liu, Jianlin
MRS Proceedings, 2010

Homobuffer thickness effect on the background electron carrier concentration of epitaxial ZnO thin films
Yang, Z and Zhou, HM and Chen, WV and Li, L and Zhao, JZ and Yu, PKL and Liu, JL
Journal of Applied Physics 108(6), 066101, AIP Publishing, 2010


2009

Performance enhancement of TiSi2 coated Si nanocrystal memory device
Zhou, Huimei and Gann Reuben, Li Bei, Liu, Jianlin, Yarmoff J. A.
MRS Proceedings, pp. 1160--H01, 2009


2008

High-performance hetero-nanocrystal memories
Li, Bei and Zhu, Yan and Zhou, Huimei and Liu, Jianlin
9th International Conference on Solid-State and Integrated-Circuit Technology, pp. 947--950, 2008


2004

Au/Ni/Al/Ti/AlxGa1-xN/GaN 禾口 Au/Pt/Al/Ti/AlxGa1-xN/GaN 欧姆接触研究
周慧梅 and 沈波 and 陈敦军 and 陈堂胜 and 焦刚
稀有金属 28(3), 487--490, 2004

Enhancement and anisotropy of the Landau g factor in modulation-doped Al 0.22 Ga 0.78 N/GaN heterostructures
Zheng, ZW and Shen, B and Gui, YS and Qiu, ZJ and Jiang, CP and Tang, N and Liu, J and Chen, DJ and Zhou, HM and Zhang, R and others
Journal of applied physics 95(5), 2473--2476, AIP, 2004


2003

Effect of surface treatments on Schottky contact on n-Al< sub> x Ga< sub> 1- x N/GaN heterostructures
Liu, J and Shen, B and Zhou, YG and Zhou, HM and Wang, MJ and Zheng, ZW and Zhang, R and Shi, Y and Zheng, YD
Optical Materials 23(1), 133--137, North-Holland, 2003

Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-Al< sub> x Ga< sub> 1- x N/GaN heterostructures
Shen, B and Zhou, HM and Liu, J and Zhou, YG and Zhang, R and Shi, Y and Zheng, YD and Someya, T and Arakawa, Y
Optical Materials 23(1), 197--201, North-Holland, 2003

调 制掺杂 Alx G31-xN/GaN 异质结 中 Alx G31-xN 势垒层表面态及其他局域态性质研究萧
刘杰 and 沈波 and 周玉刚 and 周慧梅 and 郑泽伟 and 张荣 and 施毅 and 郑有蚪
2003


2002

Influence of ferroelectric polarization on the properties of two-dimensional electron gas in Pb (Zr0. 53Ti0. 47) O3/AlxGa1-xN/GaN structures
Shen, Bo and Li, Wei-ping and Someya, Takao and Bi, Zhao-xia and Liu, Jie and Zhou, Hui-mei and Zhang, Rong and Yan, Feng and Shi, Yi and Liu, Zhi-guo and others
Japanese journal of applied physics 41(4S), 2528, IOP Publishing, 2002

Investigation of the Polarization-Induced Charges in Modulation-Doped AlxGa1-xN/GaN Heterostructures through Capacitance--Voltage Profiling and Simulation
Zhou, Yu-gang and Shen, Bo and Someya, Takao and Yu, Hui-qiang and Liu, Jie and Zhou, Hui-mei and Zhang, Rong and Shi, Yi and Zheng, You-dou and Arakawa, Yasuhiko
Japanese journal of applied physics 41(4S), 2531, IOP Publishing, 2002

Compound Semiconductor Materials and Devices-Investigation of the Polarization-Induced Charges in Modulation-Doped AlxGa (sub1-x) N/GaN Heterostructures through Capacitance-Voltage Profiling and
Zhou, Yu-gang and Shen, Bo and Someya, Takao and Yu, Huiqiang and Liu, Jie and Zhou, Hui-mei and Zhang, Rong and Shi, Yi and Zheng, You-dou and Arakawa, Yasuhiko
Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes 41(4), 2531--2535, Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-, 2002

Polarization-induced charges in modulation-doped AlxGa1-xN/GaN heterostructures through capacitance-voltage profiling
Yu-Gang, Zhou and Bo, Shen and Hui-Qiang, Yu and Jie, Liu and Hui-Mei, Zhou and Rong, Zhang and Yi, Shi and You-Dou, Zheng and Someya, T and Arakawa, Y
Chinese physics letters 19(8), 1172, IOP Publishing, 2002

Pt Schottky Contact on Modulation-doped Al\_xGa\_ (1-x) N/GaN Heterostructure
Yugang, LIU Jie SHEN Bo ZHOU and Rong, ZHOU Huimei ZHENG Zewei ZHANG and Youdou, SHI Yi ZHENG
2002 - en.cnki.com.cn

Metal/n-AlGaN Ohmic Contact
Huimei, Zhou and Bo, Shen and Yugang, Zhou and Jie, L and Zewei, Z and Yue, Q and Rong, Z and Yi, S and Youdou, Z
CHINESE JOURNAL OF SEMICONDUCTORS-CHINESE EDITION- 23(2), 156--159, KEXUE CLUBANSHE, 2002


2001

AlxGa1-xN/GaN 异质结二维电子气磁输运性质研究
郑泽伟 and 沈波 and 刘杰 and 周慧梅 and 钱悦 and 张荣 and 施毅 and 郑有炓 and 蒋春萍 and 郭少令 and others
发光学报 22(z1), 2001

Pb (Zr0. 53Ti0. 47) O3/AlxGa1-xN/GaN 异质结构的电容-电压特征
沈波 and 李卫平 and 周玉刚 and 毕朝霞 and 张荣 and 郑泽伟 and 刘杰 and 周慧梅 and 施毅 and 刘治国 and others
发光学报 22(z1), 2001

电容-电压法研究 Al\_xGa\_ (1-x) N/GaN 异质结压电极化效应 (英文)
俞慧强 and 沈波 and 周玉刚 and 张荣 and 刘杰 and 周慧梅 and 施毅 and 郑有炓
发光学报1, 2001

用肖特基电容——电压特性数值模拟法确定调制掺杂 AlxGa1—xN/GaN 异质结中的极化电荷
周玉刚 and 沈波 and 刘杰 and 周慧梅 and 俞慧强 and 张荣 and 施毅 and 郑有炓
物理学报 50(9), 1774--1778, 2001