Ph.D. Zuoguang (Louis) Liu  Ph.D. Zuoguang (Louis) Liu photo       

contact information

Research Staff Member
IBM Research, Albany NY USA
  +1dash518dash292dash7449

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Professional Associations

Professional Associations:  American Physical Society (APS)  |  IEEE Electron Devices Society (EDS)  |  Sigma Xi


2016

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
R. Xie, P. Montanini, K. Akarvardar, N. Tripathi, B. Haran, S. Johnson, T. Hook, B. Hamieh, D. Corliss, J. Wang, X. Miao, J. Sporre, J. Fronheiser, N. Loubet, M. Sung, S. Sieg, S. Mochizuki, C. Prindle, S. Seo, A. Greene, J. Shearer, A. Labonte, S. Fan, L
2016 IEEE International Electron Devices Meeting (IEDM), pp. 2.7.1-2.7.4

Air spacer for 10nm FinFET CMOS and beyond
K Cheng, C Park, C Yeung, S Nguyen, J Zhang, X Miao, M Wang, S Mehta, J Li, C Surisetty, R Muthinti, Zuoguang Liu, H Tang, S Tsai, T Yamashita, H Bu, R Divakaruni
Electron Devices Meeting (IEDM), 2016 IEEE International, pp. 17.1. 1-17.1. 4, IEEE

Technology viable DC performance elements for Si/SiGe channel CMOS FinFET
Gen Tsutsui, Ruqiang Bao, Kwan-yong Lim, Robert R Robison, Reinaldo A Vega, Jie Yang, Zuoguang Liu, et al
Electron Devices Meeting (IEDM), 2016 IEEE International, pp. 17.4. 1-17.4. 4, IEEE

Ti and NiPt/Ti Liner Silicide Contacts for Advanced Technologie
P. Adusumilli, M. Raymond, E. Alptekin, N. Breil, F. Chafik, C. Lavoie, D. Ferrer, V. Kamineni, A. Ozcan, C. Tran, H. Utomo, H. Niimi, A. Kumar, J. Cai, V. Basker, S. Koswatta, Z. Liu, et al
2016 Symposium on VLSI Technology and Circuits (VLSI)

FinFET performance with Si: P and Ge: Group-III-Metal metastable contact trench alloys
O Gluschenkov, Zuoguang Liu, H Niimi, S Mochizuki, J Fronheiser, X Miao, J Li, J Demarest, C Zhang, C Niu, B Liu, A Petrescu, P Adusumilli, J Yang, H Jagannathan, H Bu, T Yamashita
Electron Devices Meeting (IEDM), 2016 IEEE International, pp. 17.2. 1-17.2. 4, IEEE

Sub-10E-9 ohm-cm2 n-Type Contact Resistivity for FinFET Technology
Hiroaki Niimi, Zuoguang Liu, Oleg Gluschenkov, Shogo Mochizuki, Jody Fronheiser, Juntao Li, James Demarest, Chen Zhang, Bei Liu, Jie Yang, Mark Raymond, Bala Haran, Huiming Bu, Tenko Yamashita
IEEE Electron Device Letters 37(11), 1371-1374, IEEE, 2016


2015

A Novel ALD SiBCN Low-k Spacer for Parasitic Capacitance Reduction in FinFETs
T. Yamashita, S. Mehta, V. Basker, R. Southwick, A. Kumar, R. Kambhampati, R. Sathiyanarayanan, J. Johnson, T. Hook, S. Cohen, J. Li, A. Madan, Z. Zhu, L. Tai, Y. Yao, P. Chinthamanipeta, M. Hopstaken, Zuoguang Liu, D. Lu, F. Chen, S. Khan, et. al.
2015 Symposium on VLSI Technology and Circuits (VLSI)

Separation of Interface States and Electron Trapping for Hot Carrier Degradation in Ultra-Scaled Replacement Metal Gate n-FinFETs
Miaomiao Wang, Zuoguang Liu, Tenko Yamashita, James H Stathis, Chia-yu Chen
2015 IEEE International Reliability Physics Symposium (IRPS)


2011

Effect of hydrogen on the chemical bonding and band structure at the Al< inf> 2 O< inf> 3/In< inf> 0.53 Ga< inf> 0.47 As interface
P. Shekhter, L. Kornblum, Z. Liu, S. Cui, TP Ma, M. Eizenberg
Applied Physics Letters 99(23), 232103--232103, AIP, 2011

Effect of H on interface properties of Al< inf> 2 O< inf> 3/In< inf> 0.53 Ga< inf> 0.47 As
Z. Liu, S. Cui, P. Shekhter, X. Sun, L. Kornblum, J. Yang, M. Eizenberg, KS Chang-Liao, TP Ma
Applied Physics Letters 99(22), 222104--222104, AIP, 2011



2010


High-Quality< formula formulatype=
S. Cui, C.Y. Peng, W. Zhang, X. Sun, J. Yang, Z. Liu, L. Kornblum, M. Eizenberg, TP Ma
Electron Device Letters, IEEE 31(12), 1443--1445, IEEE, 2010

Inelastic electron tunneling spectroscopy study of ultrathin Al 2 O 3--TiO 2 dielectric stack on Si
Z. Liu, S. Cui, L. Kornblum, M. Eizenberg, M.F. Chang, TP Ma
Applied Physics Letters 97(20), 202905--202905, AIP, 2010

Intrinsic effective mobility extraction with extremely scaled gate dielectrics
Z. Liu, D. Guo, K. Xiu, W.K. Henson, P.J. Oldiges
Applied Physics Letters 97(2), 023509--023509, AIP, 2010

A charge-trapping memory structure featuring low-voltage high-speed operation and 250° C retention
C.Y. Peng, WQ Zhang, X. Sun, ZG Liu, S. Cui, TP Ma, L. Kornblum, M. Eizenberg
Device Research Conference (DRC), 2010, pp. 261--262



2007

Mn-doped AlN nanowires with room temperature ferromagnetic ordering
Y. Yang, Q. Zhao, XZ Zhang, ZG Liu, CX Zou, B. Shen, DP Yu
Applied Physics Letters 90(9), 092118--092118, AIP, 2007