Lukas Czornomaz  Lukas Czornomaz photo       

contact information

Researcher - Semiconductor Technology
Zurich Research Laboratory, Zurich, Switzerland
  +41dash44dash724dash87dash85

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2017

Back-gated InGaAs-on-insulator lateral N+ NN+ MOSFET: Fabrication and typical conduction mechanisms
Park, HJ and Pirro, L and Czornomaz, L and Ionica, I and Bawedin, M and Djara, V and Deshpande, V and Cristoloveanu, S
Solid-State Electronics128, 80--86, Elsevier, 2017
Abstract

DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
Deshpande, V and Djara, V and O'Connor, E and Hashemi, P and Balakrishnan, K and Caimi, D and Sousa, M and Czornomaz, L and Fompeyrine, J
Solid-State Electronics128, 87--91, Elsevier, 2017
Abstract

(Invited) Bringing III-Vs into CMOS: From Epitaxy to Circuits
Czornomaz, Lukas
231st ECS Meeting (May 28-June 1, 2017)
Abstract


2016

Theoretical and experimental analysis of capacitance and mobility in InGaAs
Bufler, FM and Frey, M and Erlebach, A and Deshpande, V and Czornomaz, L and Djara, V and O'Connor, E and Caimi, D and Fompeyrine, J
Device Research Conference (DRC), 2016 74th Annual, pp. 1--2
Abstract

Fabrication and characterization of InGaAs-on-insulator lateral N+/n/N+ structures
Czornomaz, L and Djara, V and Deshpande, V and Caimi, D and Pirro, L and Cristoloveanu, S and Fompeyrine, J
Ultimate Integration on Silicon (EUROSOI-ULIS), 2016 Joint International EUROSOI Workshop and International Conference on, pp. 214--217
Abstract

Characterization of spin-orbit fields in InGaAs quantum wells
Henn, T and Czornomaz, L and Salis, G
Applied Physics Letters 109(15), 152104, AIP Publishing, 2016
Abstract

Volume and interface conduction in InGaAs junctionless transistors
Pirro, L and Park, HJ and Ionica, I and Bawedin, M and Cristoloveanu, S and Czornomaz, L and Djara, V and Deshpande, V
Ultimate Integration on Silicon (EUROSOI-ULIS), 2016 Joint International EUROSOI Workshop and International Conference on, pp. 104--107
Abstract

First demonstration of InGaAs/SiGe CMOS inverters and dense SRAM arrays on Si using selective epitaxy and standard FEOL processes
Czornomaz, L and Djara, V and Deshpande, V and O'Connor, E and Sousa, M and Caimi, D and Cheng, K and Fompeyrine, J
VLSI Technology, 2016 IEEE Symposium on, pp. 1--2
Abstract

First RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
Deshpande, V and Djara, V and O'Connor, E and Caimi, D and Sousa, M and Czornomaz, L and Fompeyrine, J and Hashemi, P and Balakrishnan, K
Ultimate Integration on Silicon (EUROSOI-ULIS), 2016 Joint International EUROSOI Workshop and International Conference on, pp. 127--130
Abstract

Comprehensive comparison and experimental validation of band-structure calculation methods in III--V semiconductor quantum wells
Zerveas, George and Caruso, Enrico and Baccarani, Giorgio and Czornomaz, Lukas and Daix, Nicolas and Esseni, David and Gnani, Elena and Gnudi, Antonio and Grassi, Roberto and Luisier, Mathieu and others
Solid-State Electronics115, 92--102, Elsevier, 2016
Abstract

A hybrid barium titanate--silicon photonics platform for ultraefficient electro-optic tuning
Abel, Stefan and St{\"o}ferle, Thilo and Marchiori, Chiara and Caimi, Daniele and Czornomaz, Lukas and Stuckelberger, Michael and Sousa, Marilyne and Offrein, Bert J and Fompeyrine, Jean
Journal of Lightwave Technology 34(8), 1688--1693, IEEE, 2016
Abstract

CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET With $ I\_ $\{$ON$\}$= 156\~{}$\backslash$ mu$\backslash$ text $\{$A$\}$/$\backslash$ mu$\backslash$ text $\{$m$\}$ $ at $ V\_ $\{$DD$\}$= 0.5$ V and $ I\_ $\{$OFF$\}$= 100$ nA/$$\backslash$ mu$\back
Djara, Vladimir and Deshpande, Veeresh and Sousa, Marilyne and Caimi, Daniele and Czornomaz, Lukas and Fompeyrine, Jean
IEEE Electron Device Letters 37(2), 169--172, IEEE, 2016
Abstract

Fili{\`e}re technologique hybride InGaAs/SiGe pour applications CMOS
Czornomaz, Lukas
Ph.D. Thesis, 2016
Abstract

Elucidating the surface reactions of an amorphous Si thin film as a model electrode for Li-ion batteries
Ferraresi, Giulio and Czornomaz, Lukas and Villevieille, Claire and Nov{\'a}k, Petr and El Kazzi, Mario
ACS Applied Materials & Interfaces 8(43), 29791--29798, ACS Publications, 2016
Abstract

Hybrid InGaAs/SiGe technology platform for CMOS applications
Czornomaz, Lukas
Ph.D. Thesis, 2016
Abstract

Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated With Silicon Active Substrate (III-V-OIAS)
Lin, Jianqiang and Czornomaz, Lukas and Daix, Nicolas and Antoniadis, Dimitri A and del Alamo, Jes{\'u}s A
IEEE Transactions on Electron Devices 63(8), 3088--3095, IEEE, 2016
Abstract

Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al 2 O 3 gate dielectric and H 2/Ar anneal
Djara, Vladimir and Czornomaz, Lukas and Deshpande, Veeresh and Daix, Nicolas and Uccelli, Emanuele and Caimi, Daniele and Sousa, Marilyne and Fompeyrine, Jean
Solid-State Electronics115, 103--108, Elsevier, 2016
Abstract

Comprehensive comparison and experimental validation of band-structure calculation methods in III--V semiconductor quantum wells
Zerveas, George and Caruso, Enrico and Baccarani, Giorgio and Czornomaz, Lukas and Daix, Nicolas and Esseni, David and Gnani, Elena and Gnudi, Antonio and Grassi, Roberto and Luisier, Mathieu and others
Solid-State Electronics115, 92--102, Elsevier, 2016
Abstract

A hybrid barium titanate--silicon photonics platform for ultraefficient electro-optic tuning
Abel, Stefan and St{\"o}ferle, Thilo and Marchiori, Chiara and Caimi, Daniele and Czornomaz, Lukas and Stuckelberger, Michael and Sousa, Marilyne and Offrein, Bert J and Fompeyrine, Jean
Journal of Lightwave Technology 34(8), 1688--1693, IEEE, 2016
Abstract

CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET With $ I\_ $\{$ON$\}$= 156\~{}$\backslash$ mu$\backslash$ text $\{$A$\}$/$\backslash$ mu$\backslash$ text $\{$m$\}$ $ at $ V\_ $\{$DD$\}$= 0.5$ V and $ I\_ $\{$OFF$\}$= 100$ nA/$$\backslash$ mu$\back
Djara, Vladimir and Deshpande, Veeresh and Sousa, Marilyne and Caimi, Daniele and Czornomaz, Lukas and Fompeyrine, Jean
IEEE Electron Device Letters 37(2), 169--172, IEEE, 2016
Abstract


2015

A mode-engineered hybrid III-V-on-silicon photodetector
Hofrichter, J and Czornomaz, L and Horst, F and Seifried, M and Caimi, D and Meier, N and Fompeyrine, J and Offrein, BJ
Optical Communication (ECOC), 2015 European Conference on, pp. 1--3
Abstract

Electrical characterisation of InGaAs on insulator structures
Cherkaoui, K and Gomeniuk, YY and Daix, N and O’Brien, J and Blake, A and Thomas, KK and Pelucchi, E and O’Connell, D and Sheehan, B and Monaghan, S and others
Microelectronic Engineering147, 63--66, Elsevier, 2015
Abstract

Tri-gate In 0.53 Ga 0.47 As-on-insulator junctionless field effect transistors
Djara, V and Czornomaz, L and Daix, N and Caimi, D and Deshpande, V and Uccelli, E and Sousa, M and Marchiori, C and Fompeyrine, J
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on, pp. 97--100
Abstract

Modeling approaches for band-structure calculation in III-V FET quantum wells
Caruso, Enrico and Zerveas, G and Baccarani, G and Czornomaz, L and Daix, N and Esseni, D and Gnani, E and Gnudi, A and Grassi, R and Luisier, M and others
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on, pp. 101--104
Abstract

Advanced 3D monolithic hybrid CMOS with sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI fin pFETs
Deshpande, V and Djara, V and O'Connor, E and Hashemi, P and Balakrishnan, K and Sousa, M and Caimi, D and Olziersky, A and Czornomaz, L and Fompeyrine, J
Electron Devices Meeting (IEDM), 2015 IEEE International, pp. 8--8
Abstract

An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
Djara, V and Deshpande, V and Uccelli, E and Daix, N and Caimi, D and Rossel, C and Sousa, M and Siegwart, H and Marchiori, C and Hartmann, JM and others
VLSI Technology (VLSI Technology), 2015 Symposium on, pp. T176--T177
Abstract

Confined epitaxial lateral overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates
Czornomaz, L and Uccelli, E and Sousa, M and Deshpande, V and Djara, V and Caimi, D and Rossell, MD and Erni, R and Fompeyrine, J
VLSI Technology (VLSI Technology), 2015 Symposium on, pp. T172--T173
Abstract

Integrated silicon nanophotonics: structure and electro-optic properties of BaTiO3 on Si (001)
Kormondy, Kristy and Fallegger, Florian and Abel, Stefan and Popoff, Youri and Ponath, Patrick and Posadas, Agham and Sousa, Marilyne and Caimi, Daniele and Siegwart, Heinz and Uccelli, Emanuele and others
APS March Meeting Abstracts, pp. 1057, 2015
Abstract

Barium-titanate integrated with silicon photonics for ultra-efficient electro-optical performance
Abel, Stefan and St{\"o}ferle, Thilo and Marchiori, Chiara and Caimi, Daniele and Czornomaz, Lukas and Rossell, Marta D and Erni, Rolf and Sousa, Marilyne and Siegwart, Heinz and Offrein, Bert J and others
Optical Communication (ECOC), 2015 European Conference on, pp. 1--3
Abstract

Optical nonlinear barium titanate thin films integrated in silicon photonic devices
Abel, Stefan and St{\"o}ferle, Thilo and Marchiori, Chiara and Caimi, Daniele and Czornomaz, Lukas and Rossell, Marta D and Erni, Rolf and Sousa, Marilyne and Offrein, Bert J and Fompeyrine, Jean
The European Conference on Lasers and Electro-Optics, pp. CD\_P\_1, 2015
Abstract

Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si (001)
Kormondy, Kristy J and Abel, Stefan and Fallegger, Florian and Popoff, Youri and Ponath, Patrick and Posadas, Agham B and Sousa, Marilyne and Caimi, Daniele and Siegwart, Heinz and Uccelli, Emanuele and others
Microelectronic Engineering147, 215--218, Elsevier, 2015
Abstract

(Invited) Material and Device Integration for Hybrid III-V/SiGe CMOS Technology
Deshpande, Veeresh Vidyadhar and Djara, Vladimir and Caimi, Daniele and O'Connor, Eamon and Sousa, Marilyne and Czornomaz, Lukas and Fompeyrine, Jean
ECS Transactions 69(10), 131--142, The Electrochemical Society, 2015
Abstract

Low Dit HfO 2/Al 2 O 3/In 0.53 Ga 0.47 As gate stack achieved with plasma-enhanced atomic layer deposition
Djara, Vladimir and Sousa, Marilyne and Dordevic, Nikola and Czornomaz, Lukas and Deshpande, Veeresh and Marchiori, Chiara and Uccelli, Emanuele and Caimi, Daniele and Rossel, Christophe and Fompeyrine, Jean
Microelectronic Engineering147, 231--234, Elsevier, 2015
Abstract


2014

III/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS
Uccelli, E and Daix, N and Czornomaz, L and Caimi, D and Rossel, C and Sousa, M and Siegwart, H and Marchiori, C and Hartmann, JM and Fompeyrine, J
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International, pp. 25--26
Abstract

Co-integrating high mobility channels for future CMOS, from substrate to circuits
Czornomaz, L and Daix, N and Uccelli, E and Caimi, D and Sousa, M and Rossel, C and Siegwart, H and Marchiori, C and Fompeyrine, J
Indium Phosphide and Related Materials (IPRM), 26th International Conference on, pp. 1--2, 2014
Abstract

Strain effects on n-InGaAs heterostructure-on-insulator made by direct wafer bonding
Rossel, C and Weigele, P and Czornomaz, L and Daix, N and Caimi, D and Sousa, M and Fompeyrine, J
Solid-State Electronics98, 88--92, Elsevier, 2014
Abstract

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
Daix, N and Uccelli, E and Czornomaz, L and Caimi, D and Rossel, C and Sousa, M and Siegwart, H and Marchiori, C and Hartmann, JM and Shiu, K-T and others
APL Materials 2(8), 086104, AIP, 2014
Abstract

Hybrid III-V/SiGe technology: Improved n-FET performance and CMOS inverter characteristics
Czornomaz, Lukas and Daix, Nicolas and Caimi, Daniele and Djara, Vladimir and Uccelli, Emanuele and Rossel, Christophe and Marchiori, Chiara and Sousa, Marilyne and Fompeyrine, Jean
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE, pp. 1--2
Abstract

(Invited) Wafer Bonding: An Integration Route for Hybrid III-V/SiGe CMOS on 300mm
Czornomaz, Lukas and Daix, Nicolas and Uccelli, Emanuele and Djara, Vladimir and Caimi, Daniele and Rossel, Christophe and Sousa, Marilyne and Siegwart, Heinz and Marchiori, Chiara and Hartmann, Jean-Michel and others
ECS Transactions 64(5), 199--209, The Electrochemical Society, 2014
Abstract

Ultra-thin-body self-aligned InGaAs MOSFETs on insulator (III-VOI) by a tight-pitch process
Lin, Jianqiang and Czornomaz, Lukas and Daix, Nicolas and Antoniadis, Dimitri A and del Alamo, Jesus A
Device Research Conference (DRC), 2014 72nd Annual, pp. 217--218
Abstract


2013

Advanced physical characterization of Si-passivated III-V semiconductors for low-power logic applications: Defect chemistry, band bending and surface photo-voltage
Marchiori, Chiara and El-Kazzi, M and Czornomaz, L and Pierucci, D and Silly, M and Sirotti, F and Abel, S and Uccelli, E and Sousa, M and Fompeyrine, J
Meeting Abstracts, pp. 2189--2189, 2013
Abstract

(Invited) Physical and Electrical Properties of Scaled Gate Stacks on Si/Passivated In0. 53Ga0. 47As
Marchiori, Chiara and El Kazzi, M and Czornomaz, L and Pierucci, D and Silly, M and Sirotti, F and Abel, S and Uccelli, E and Sousa, M and Fompeyrine, J
ECS Transactions 58(7), 369--378, The Electrochemical Society, 2013
Abstract

Thermal stability of ultra-thin InGaAs-on-insulator substrates
Daix, N and Czornomaz, L and Caimi, D and Rossel, C and Sousa, M and Fompeyrine, J
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE, pp. 1--2
Abstract

Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam--based analytical techniques
Hopstaken, MJP and Pfeiffer, D and Copel, M and Gordon, MS and Ando, T and Narayanan, V and Jagannathan, H and Molis, S and Wahl, JA and Bu, H and others
Surface and Interface Analysis 45(1), 338--344, Wiley Online Library, 2013
Abstract

Nanoscale physics and defect state chemistry at amorphous-Si/In0. 53Ga0. 47As interfaces
Marchiori, C and El Kazzi, M and Czornomaz, L and Pierucci, D and Silly, M and Sirotti, F and Abel, S and Uccelli, E and Sousa, M and Fompeyrine, J
Journal of Physics D: Applied Physics 47(5), 055101, IOP Publishing, 2013
Abstract

III--V heterostructure-on-insulator for strain studies in n-InGaAs channels
Weigele, P and Czornomaz, L and Caimi, D and Daix, N and Sousa, M and Fompeyrine, J and Rossel, C
Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on, pp. 45--48
Abstract

Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon
Czornomaz, L and Daix, N and Kerber, P and Lister, K and Caimi, D and Rossel, C and Sousa, M and Uccelli, E and Fompeyrine, J
Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European, pp. 143--146
Abstract

Co-integration of InGaAs n-and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates
Czornomaz, L and Daix, N and Cheng, K and Caimi, D and Rossel, C and Lister, K and Sousa, M and Fompeyrine, J
Electron Devices Meeting (IEDM), 2013 IEEE International, pp. 2--8
Abstract

Electro-optical active barium titanate thin films in silicon photonics devices
Abel, Stefan and St{\"o}ferle, Thilo and Marchiori, Chiara and Caimi, Daniele and Czornomaz, Lukas and Rossel, Christophe and Rossell, Marta and Erni, Rolf and Sousa, Marilyne and Siegwart, Heinz and others
Integrated Photonics Research, Silicon and Nanophotonics, pp. IW4A--5, 2013
Abstract

Confinement and integration of magnetic impurities in silicon
Frank J Ruess, Mario El Kazzi, Lukas Czornomaz, Philipp Mensch, Marinus Hopstaken, Andreas Fuhrer
Applied Physics Letters102, 082101, 2013


2012

Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors
El Kazzi, M and Czornomaz, L and Rossel, C and Gerl, C and Caimi, D and Siegwart, H and Fompeyrine, J and Marchiori, C
Applied Physics Letters 100(6), 063505, AIP, 2012
Abstract

An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
L Czornomaz, N Daix, D Caimi, M Sousa, R Erni, MD Rossell, M El-Kazzi, C Rossel, C Marchiori, E Uccelli
2012 IEEE International Electron Devices Meeting (IEDM), pp. 23-24

Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53 Ga0.47As metal-oxide-semiconductor field-effect-transistors
M. El Kazzi, L. Czornomaz, C. Rossel, C. Gerl, D. Caimi, H. Siegwart, J. Fompeyrine, C. Marchiori
Applied Physics Letters 100(6), 063505-063505, 2012

Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
MJP Hopstaken, D. Pfeiffer, M. Copel, MS Gordon, T. Ando, V. Narayanan, H. Jagannathan, S. Molis, JA Wahl, H. Bu, D.K. Sadana, L. Czornomaz, C. Marchiori, J. Fompeyrine
Surface and Interface Analysis 45(1), 338-344, Wiley Online Library, 2012

Gate-first implant-free InGaAs n-MOSFETs with sub-nm EOT and CMOS-compatible process suitable for VLSI
L Czornomaz, M El Kazzi, D Caimi, C Rossel, E Uccelli, M Sousa, C Marchiori, M Richter, H Siegwart, J Fompeyrine
70th Annual Device Research Conference (DRC), pp. 207-208, 2012

CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
L. Czornomaz, M. El Kazzi, M. Hopstaken, D. Caimi, P. Machler, C. Rossel, M. Bjoerk, C. Marchiori, H. Siegwart, J. Fompeyrine
Solid-State Electronics74, 71-76, Elsevier, 2012


2011

Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low $ D\_ $\{$rm it$\}$ $
Kazzi, ME and Czornomaz, L and Webb, DJ and Rossel, C and Caimi, D
Appl. Phys. Lett. 99(5), 052102--1, 2011

Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit
El Kazzi, M and Czornomaz, L and Webb, DJ and Rossel, C and Caimi, D and Siegwart, H and Fompeyrine, J and Marchiori, C
Applied Physics Letters 99(5), 052102, AIP, 2011
Abstract

Self-aligned S/D regions for InGaAs MOSFETs
L Czornomaz, M El Kazzi, D Caimi, P Machler, C Rossel, M Bjoerk, C Marchiori, J Fompeyrine
Proceedings of the European Solid-State Device Research Conference (ESSDERC), pp. 219-222, 2011

1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
M. El Kazzi, DJ Webb, L. Czornomaz, C. Rossel, C. Gerl, M. Richter, M. Sousa, D. Caimi, H. Siegwart, J. Fompeyrine
Microelectronic Engineering 88(7), 1066-1069, 2011

Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit
M. El Kazzi, L. Czornomaz, DJ Webb, C. Rossel, D. Caimi, H. Siegwart, J. Fompeyrine, C. Marchiori
Applied Physics Letters 99(5), 052102-052102, 2011


2010

Tunable Pyramidal Assemblies of Nanoparticles by Convective/Capillary Deposition on Hydrophilic Patterns Made by AFM Oxidation Lithography
Viallet, B and Ressier, L and Czornomaz, L and Decorde, N
Langmuir 26(7), 4631--4634, ACS Publications, 2010
Abstract


Year Unknown

CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 $\mu$A/$\mu$m at VDD= 0.5 V and IOFF= 100 nA/$\mu$m
Djara, Vladimir and Deshpande, Veeresh and Sousa, Marilyne and Caimi, Daniele and Czornomaz, Lukas and Fompeyrine, Jean
ieeexplore.ieee.org, 0
Abstract

CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 $\mu$A/$\mu$m at VDD= 0.5 V and IOFF= 100 nA/$\mu$m
Djara, Vladimir and Deshpande, Veeresh and Sousa, Marilyne and Caimi, Daniele and Czornomaz, Lukas and Fompeyrine, Jean
ieeexplore.ieee.org, 0
Abstract