Marilyne Sousa  Marilyne Sousa photo       

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Senior Characterization Engineer
Zurich Research Laboratory, Zurich, Switzerland
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2017

DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
Deshpande, V and Djara, V and O'Connor, E and Hashemi, P and Balakrishnan, K and Caimi, D and Sousa, M and Czornomaz, L and Fompeyrine, J
Solid-State Electronics128, 87--91, Elsevier, 2017
Abstract

Microstructure and ferroelectricity of BaTiO3 thin films on Si for integrated photonics
Kristy J Kormondy, Youri Popoff, Marilyne Sousa, Felix Eltes, Daniele Caimi, Marta D Rossell, Manfred Fiebig, Patrik Hoffmann, Chiara Marchiori, Michael Reinke, Morgan Trassin, Alexander A Demkov, Jean Fompeyrine, Stefan Abel
Nanotechnology 28(7), 075706, 2017

Bringing III-Vs into CMOS: From Materials to Circuits
Czornomaz, Lukas and Deshpande, Veeresh Vidyadhar and O'Connor, Eamon and Caimi, Daniele and Sousa, Marilyne and Fompeyrine, Jean
ECS Transactions 77(5), 173--184, The Electrochemical Society, 2017
Abstract

Low-resistive, CMOS-compatible ohmic contact schemes to moderately doped n-InP
Hahn, Herwig and Sousa, Marilyne and Czornomaz, Lukas
Journal of Physics D: Applied Physics 50(23), 235102, IOP Publishing, 2017
Abstract

Microstructure and ferroelectricity of barium titanate thin films on Si for integrated photonics
Kormondy, Kristy J and Demkov, Alexander A and Popoff, Youri and Sousa, Marilyne and Eltes, Felix and Caimi, Daniele and Marchiori, Chiara and Fompeyrine, Jean and Abel, Stefan
IC Design and Technology (ICICDT), 2017 IEEE International Conference on, pp. 1--2
Abstract

Three-dimensional monolithic integration of III--V and Si (Ge) FETs for hybrid CMOS and beyond
Deshpande, Veeresh and Djara, Vladimir and O’Connor, Eamon and Hashemi, Pouya and Morf, Thomas and Balakrishnan, Karthik and Caimi, Daniele and Sousa, Marilyne and Fompeyrine, Jean and Czornomaz, Lukas
Japanese Journal of Applied Physics 56(4S), 04CA05, IOP Publishing, 2017
Abstract

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films
Vervaele, Mattias and De Roo, Bert and Debehets, Jolien and Sousa, Marilyne and Zhang, Luman and Van Bilzen, Bart and Ser{\'e}, Stephanie and Guillon, Herve and Rajala, Markku and Seo, Jin Won and others
Advanced Engineering Materials 19(8), Wiley Online Library, 2017
Abstract


2016

Symmetry, strain, defects, and the nonlinear optical response of crystalline BaTiO3/silicon
Kormondy, Kristy and Abel, Stefan and Popoff, Youri and Sousa, Marilyne and Caimi, Daniele and Siegwart, Heinz and Marchiori, Chiara and Rossell, Marta and Demkov, Alex and Fompeyrine, Jean
APS Meeting Abstracts, 2016
Abstract

CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET With $ I\_ $\{$ON$\}$= 156\~{}$\backslash$mu$\backslash$text $\{$A$\}$/$\backslash$mu$\backslash$text $\{$m$\}$ $ at $ V\_ $\{$DD$\}$= 0.5$ V and $ I\_ $\{$OFF$\}$= 100$ nA/$$\backslash$mu$\backslash
Djara, Vladimir and Deshpande, Veeresh and Sousa, Marilyne and Caimi, Daniele and Czornomaz, Lukas and Fompeyrine, Jean
IEEE Electron Device Letters 37(2), 169--172, IEEE, 2016
Abstract

Fingerprinting Electronic Molecular Complexes in Liquid
Peter Nirmalraj, Andrea La Rosa, Damien Thompson, Marilyne Sousa, Nazario Martin, Bernd Gotsmann & Heike Riel
Scientific Reports 6(19009), 2016

Low-Loss BaTiO3-Si Waveguides for Nonlinear Integrated Photonics
Felix Eltes, Daniele Caimi, Florian Fallegger, Marilyne Sousa, Eamon O'Connor, Marta D. Rossell, Bert Offrein, Jean Fompeyrine, Stefan Abel
ACS Photonics3, 1698, 2016

Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al 2 O 3 gate dielectric and H 2/Ar anneal
Djara, Vladimir and Czornomaz, Lukas and Deshpande, Veeresh and Daix, Nicolas and Uccelli, Emanuele and Caimi, Daniele and Sousa, Marilyne and Fompeyrine, Jean
Solid-State Electronics115, 103--108, Elsevier, 2016
Abstract

Comprehensive comparison and experimental validation of band-structure calculation methods in III--V semiconductor quantum wells
Zerveas, George and Caruso, Enrico and Baccarani, Giorgio and Czornomaz, Lukas and Daix, Nicolas and Esseni, David and Gnani, Elena and Gnudi, Antonio and Grassi, Roberto and Luisier, Mathieu and others
Solid-State Electronics115, 92--102, Elsevier, 2016
Abstract

CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET With $ I\_ $\{$ON$\}$= 156\~{}$\backslash$mu$\backslash$text $\{$A$\}$/$\backslash$mu$\backslash$text $\{$m$\}$ $ at $ V\_ $\{$DD$\}$= 0.5$ V and $ I\_ $\{$OFF$\}$= 100$ nA/$$\backslash$mu$\backslash
Djara, Vladimir and Deshpande, Veeresh and Sousa, Marilyne and Caimi, Daniele and Czornomaz, Lukas and Fompeyrine, Jean
IEEE Electron Device Letters 37(2), 169--172, IEEE, 2016
Abstract

A hybrid barium titanate--silicon photonics platform for ultraefficient electro-optic tuning
Abel, Stefan and St{\"o}ferle, Thilo and Marchiori, Chiara and Caimi, Daniele and Czornomaz, Lukas and Stuckelberger, Michael and Sousa, Marilyne and Offrein, Bert J and Fompeyrine, Jean
Journal of Lightwave Technology 34(8), 1688--1693, IEEE, 2016
Abstract


2015

Integrated silicon nanophotonics: structure and electro-optic properties of BaTiO3 on Si (001)
Kormondy, Kristy and Fallegger, Florian and Abel, Stefan and Popoff, Youri and Ponath, Patrick and Posadas, Agham and Sousa, Marilyne and Caimi, Daniele and Siegwart, Heinz and Uccelli, Emanuele and others
APS March Meeting Abstracts, pp. 1057, 2015
Abstract

Barium-titanate integrated with silicon photonics for ultra-efficient electro-optical performance
Abel, Stefan and St{\"o}ferle, Thilo and Marchiori, Chiara and Caimi, Daniele and Czornomaz, Lukas and Rossell, Marta D and Erni, Rolf and Sousa, Marilyne and Siegwart, Heinz and Offrein, Bert J and others
Optical Communication (ECOC), 2015 European Conference on, pp. 1--3
Abstract

Low Dit HfO2/Al2O3/In0. 53Ga0. 47As gate stack achieved
Djara, Vladimir and Sousa, Marilyne and Dordevic, Nikola and Czornomaz, Lukas and Deshpande, Veeresh and Marchiori, Chiara and Uccelli, Emanuele and Caimi, Daniele and Rossel, Christophe and Fompeyrine, Jean
2015 - researchgate.net
Abstract

Optical nonlinear barium titanate thin films integrated in silicon photonic devices
Abel, Stefan and St{\"o}ferle, Thilo and Marchiori, Chiara and Caimi, Daniele and Czornomaz, Lukas and Rossell, Marta D and Erni, Rolf and Sousa, Marilyne and Offrein, Bert J and Fompeyrine, Jean
The European Conference on Lasers and Electro-Optics, pp. CD\_P\_1, 2015
Abstract

Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si (001)
Kormondy, Kristy J and Abel, Stefan and Fallegger, Florian and Popoff, Youri and Ponath, Patrick and Posadas, Agham B and Sousa, Marilyne and Caimi, Daniele and Siegwart, Heinz and Uccelli, Emanuele and others
Microelectronic Engineering147, 215--218, Elsevier, 2015
Abstract

Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films
Bart Van Bilzen, Pia Homm, Leander Dillemans, Chen-Yi Su, Mariela Menghini, Marilyne Sousa, Chiara Marchiori, Luman Zhang, Jin Won Seo, Jean-Pierre Locquet
Thin Solid Films591, 143-148, 2015

Low Dit HfO 2/Al 2 O 3/In 0.53 Ga 0.47 As gate stack achieved with plasma-enhanced atomic layer deposition
Djara, Vladimir and Sousa, Marilyne and Dordevic, Nikola and Czornomaz, Lukas and Deshpande, Veeresh and Marchiori, Chiara and Uccelli, Emanuele and Caimi, Daniele and Rossel, Christophe and Fompeyrine, Jean
Microelectronic Engineering147, 231--234, Elsevier, 2015
Abstract


2014

Hybrid III-V/SiGe technology: Improved n-FET performance and CMOS inverter characteristics
Czornomaz, Lukas and Daix, Nicolas and Caimi, Daniele and Djara, Vladimir and Uccelli, Emanuele and Rossel, Christophe and Marchiori, Chiara and Sousa, Marilyne and Fompeyrine, Jean
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE, pp. 1--2
Abstract

Wafer bonding: An integration route for hybrid III-V/SiGe CMOS on 300mm
L.. Czornomaz, N. Daix, E. Uccelli, V. Djara, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori, J.-M. Hartmann, and J. Fompeyrine
ECS Transactions 64(5), 199-209, 2014

Nanoelectrical analysis of single molecules and atomic-scale materials at the solid/liquid interface
P. Nirmalraj, D. Thompson, A. Molina-Ontoria, M. Sousa, N. Martin, B.Gotsmann, and H. Riel
Nature Materials 13, 947, 2014


2013

Electro-optical active barium titanate thin films in silicon photonics devices
Abel, Stefan and St{\"o}ferle, Thilo and Marchiori, Chiara and Caimi, Daniele and Czornomaz, Lukas and Rossel, Christophe and Rossell, Marta and Erni, Rolf and Sousa, Marilyne and Siegwart, Heinz and others
Integrated Photonics Research, Silicon and Nanophotonics, pp. IW4A--5, 2013
Abstract

Electro-Optical Active Barium Titanate Thin Films in Silicon Photonics Devices
Stefan Abel, Thilo Stöferle, Chiara Marchiori, Daniele Caimi, Lukas Czornomaz, Christophe Rossel, Marta Rossell, Rolf Erni, Marilyne Sousa, Heinz Siegwart, Jens Hofrichter, Michael Stuckelberger, Alexei Chelnokov, Bert J. Offrein, and Jean Fompeyrine
Advanced Photonics, pp. IW4A.5, 2013

A strong electro-optically active lead-free ferroelectric integrated on silicon
Stefan Abel, Thilo Stöferle, Chiara Marchiori, Christophe Rossel, Marta D. Rossell, Rolf Erni, Daniele Caimi, Marilyne Sousa, Alexei Chelnokov, Bert J. Offrein & Jean Fompeyrine
Nature Communications 4(1671), 2013


2012

Electro-optical properties of barium titanate films epitaxially grown on silicon
S Abel, D Caimi, M Sousa, T Stöferle, C Rossel, C Marchiori, A Chelnokov, J Fompeyrine
SPIE OPTO, pp. 82630Y, 2012


2011

GaAs on 200mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy
M. Richter, C. Rossel, DJ Webb, T. Topuria, C. Gerl, M. Sousa, C. Marchiori, D. Caimi, H. Siegwart, PM Rice
Journal of Crystal Growth 323(1), 387-392, 2011

1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
M. El Kazzi, DJ Webb, L. Czornomaz, C. Rossel, C. Gerl, M. Richter, M. Sousa, D. Caimi, H. Siegwart, J. Fompeyrine
Microelectronic Engineering 88(7), 1066-1069, 2011


2010

Structural and electrical properties of fully strained (In, Ga) As field effect transistors with in situ deposited gate stacks
C. Marchiori, E. Kiewra, J. Fompeyrine, C. Gerl, C. Rossel, M. Richter, J.P. Locquet, T. Smets, M. Sousa, C. Andersson
Applied Physics Letters 96(21), 212901-212901, 2010


2009

Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices
C. Andersson, C. Rossel, M. Sousa, DJ Webb, C. Marchiori, D. Caimi, H. Siegwart, Y. Panayiotatos, A. Dimoulas, J. Fompeyrine
Microelectronic Engineering 86(7), 1635-1637, Elsevier, 2009

Impact of La2O3 thickness on HfO2/La2O3/Ge capacitors and p-channel MOSFETs
Caroline Andersson, Marilyne Sousa, Chiara Marchiori, David J Webb, Daniele Caimi, Heinz Siegwart, Jean Fompeyrine, Christophe Rossel, Athanasios Dimoulas, Yerassimos Panayiotatos
Proc. ESSDERC, pp. 173, 2009

H plasma cleaning and a-Si passivation of GaAs for surface channel device applications
C. Marchiori, DJ Webb, C. Rossel, M. Richter, M. Sousa, C. Gerl, R. Germann, C. Andersson, J. Fompeyrine
Journal of Applied Physics 106(11), 114112, 2009


2008

Gate Dielectrics for High Mobility Semiconductors
Athanasios Dimoulas, Yerassimos Panayiotatos, Polychronis Tsipas, Sotiria Galata, Georgia Mavrou, Andreas Sotiropoulos, Chiara Marchiori, Christophe Rossel, David Webb, Caroline Andersson
ECS Transactions 16(5), 295-306, 2008

Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si
C. Dieker, J.W. Seo, A. Guiller, M. Sousa, J.P. Locquet, J. Fompeyrine, Y. Panayiotatos, A. Sotiropoulos, K. Argyropoulos, A. Dimoulas
Microscopy of Semiconducting Materials 2007, pp. 119-122, Springer, 2008

Enhanced uniaxial magnetic anisotropy in Fe31Co69 thin films on GaAs (001)
F. Bianco, P. Bouchon, M. Sousa, G. Salis, SF Alvarado
Journal of Applied Physics 104(8), 083901, AIP, 2008


2007

Fabrication of MBE High-κ MOSFETs in a Standard CMOS Flow
L Pantisano, T Conard, T Scram, W Deweerd, S De Gendt, M Heyns, ZM Rittersma, C Marchiori, M Sousa, J Fompeyrine, others
Advanced Gate Stacks for High-Mobility Semiconductors, pp. 363-374, Springer, 2007

Enhancement-Mode Buried-Channel
Yanning Sun, EW Kiewra, SJ Koester, N Ruiz, A Callegari, KE Fogel, DK Sadana, J Fompeyrine, DJ Webb, JP Locquet, others
IEEE electron device letters 28(6), 473, 2007

Investigating the molecular mechanisms of in-plane mechanochemistry on cantilever arrays
Moyu Watari, Jane Galbraith, Hans-Peter Lang, Marilyne Sousa, Martin Hegner, Christoph Gerber, Mike A Horton, Rachel A McKendry
Journal of the American Chemical Society 129(3), 601-609, ACS Publications, 2007

Optical properties of epitaxial SrHfO3 thin films grown on Si
M. Sousa, C. Rossel, C. Marchiori, H. Siegwart, D. Caimi, J.P. Locquet, D.J. Webb, R. Germann, J. Fompeyrine, K. Babich
Journal of Applied Physics 102(10), 104103, 2007

Epitaxial germanium-on-insulator grown on (001) Si
J.W. Seo, C. Dieker, A. Tapponnier, C. Marchiori, M. Sousa, J.P. Locquet, J. Fompeyrine, A. Ispas, C. Rossel, Y. Panayiotatos
Microelectronic Engineering 84(9), 2328-2331, ., 2007

In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAPs: Effect of GaAs surface reconstruction
DJ Webb, J. Fompeyrine, S. Nakagawa, A. Dimoulas, C. Rossel, M. Sousa, R. Germann, SF Alvarado, J.P. Locquet, C. Marchiori
Microelectronic Engineering 84(9), 2142-2145, 2007

SrHfO3 as gate dielectric for future CMOS technology
C. Rossel, M. Sousa, C. Marchiori, J. Fompeyrine, D. Webb, D. Caimi, B. Mereu, A. Ispas, J.P. Locquet, H. Siegwart
Microelectronic Engineering 84(9), 1869-1873, 2007


2006

High Mobility Channels for Ultimate CMOS
D. Sadana, S. Koester, Y. Sun, EW Kiewra, S.W. Bedell, A. Reznicek, J. Ott, K. Fogel, D.J. Webb, J. Fompeyrine, others
ECS Transactions 3(2), 343-354, The Electrochemical Society, 2006

B-site substitution in LaTiO3 thin films: influence on the titanium oxidation state.
A Guiller, C Marchiori, M Sousa, R Germann, JP Locquet, J Fompeyrine, JW Seo
Bulletin of the American Physical Society, APS, 2006

Thermal stability of the SrTiO3/(Ba, Sr)O
C. Marchiori, M. Sousa, A. Guiller, H. Siegwart, J.P. Locquet, J. Fompeyrine, GJ Norga, JW Seo
Applied Physics Letters 88(7), 072913-072913, AIP, 2006

Thermal stability of the SrTiO/(Ba, Sr)O stacks epitaxially grown on Si
C. Marchiori, M. Sousa, A. Guiller, H. Siegwart, J.P. Locquet, J. Fompeyrine, GJ Norga, J.W. Seo
Applied Physics Letters88, 072913, 2006

High-κ dielectrics for the gate stack
J.P. Locquet, C. Marchiori, M. Sousa, J. Fompeyrine, J.W. Seo
Journal of Applied Physics 100(5), 051610, AIP, 2006

Characterization of field-effect transistors with La2Hf2O7 and Hf
ZM Rittersma, JC Hooker, G. Vellianitis, J.P. Locquet, C. Marchiori, M. Sousa, J. Fompeyrine, L. Pantisano, W. Deweerd, T. Schram
Journal of Applied Physics 99(2), 024508-024508, 2006

Buried-channel In0.70Ga0.30As/In0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics
Y. Sun, SJ Koester, EW Kiewra, KE Fogel, DK Sadana, DJ Webb, J. Fompeyrine, J.P. Locquet, M. Sousa, R. Germann
64th Device Research Conference, pp. 49-50, 2006

Field-effect transistors with SrHfO3 as gate oxide
C. Rossel, B. Mereu, C. Marchiori, D. Caimi, M. Sousa, A. Guiller, H. Siegwart, R. Germann, J.P. Locquet, J. Fompeyrine
Applied Physics Letters 89(5), 053506, AIP, 2006

Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si/SiO2 interlayers
SJ Koester, EW Kiewra, Y. Sun, DA Neumayer, JA Ott, M. Copel, DK Sadana, DJ Webb, J. Fompeyrine, J.P. Locquet
Applied Physics Letters 89(4), 042104, 2006


2004

Polarization-independent thermooptic phase shifters in silicon-oxynitride waveguides
B.J. Offrein, D. Jubin, T. Koster, T. Brunschwiler, F. Horst, D. Wiesmann, G. I. Meijer, M. Sousa Petit, D. Webb, R. Germann
Photonics Technology Letters 16, 1483, 2004


2003

Advances in silicon oxynitride waveguides
Bert J Offrein, Dorothea Wiesmann, Gian Salis, Marilyne Sousa, Ingmar Meijer, Folkert Horst, Roland Germann, Thomas Brunschwiler, David J Webb, Gian L Bona, others
Integrated Photonics Research, pp. IMC1, 2003


Year Unknown

Direct Liquid Injection- Low Pressure Chemical Vapor Deposition of Silica Thin Films from Di-t-butoxydiacetoxysilane
Vervaele, Mattias and De Roo, Bert and Debehets, Jolien and Sousa, Marilyne and Zhang, Luman and Van Bilzen, Bart and Ser{\'e}, Stephanie and Guillon, Herve and Rajala, Markku and Won Seo, Jin and others
Advanced Engineering Materials, Wiley Online Library, 0
Abstract