Heike E. Riel photo

Contact Information

Heike E. Riel
IBM Fellow, Manager Materials Integration & Nanoscale Devices (MIND)
Zurich Research Laboratory, Zurich, Switzerland
      +41dash44dash724dash83dash34


2014

Vertical III-V Nanowire Device Integration on Si(100)

M. Borg, H. Schmid, K. E. Moselund, G. Signorello, L. Gignac, J. Bruley, C. Breslin, P. Das Kanungo, P. Werner, H. Riel
Nano Letters 14(4), 1914, 2014

Using the Seebeck coefficient to determine charge carrier concentration, mobility, and relaxation time in InAs nanowires

V. Schmidt, P. F. J. Mensch, S. F. Karg, B. Gotsmann, P. Das Kanungo, H. Schmid, and H. Riel
Applied Physics Letters104, 012113, 2014

Nanoelectrical Imaging of Graphene in Liquids Materials Today

P. N. Nirmalraj, H. Riel
Materials Today, accepted, including cover picture, 2014

Inducing a Direct-to-Pseudodirect Bandgap Transition in Wurtzite GaAs Nanowires with Uniaxial Stress

G. Signorello, E. Lörtscher, P. A. Khomyakov, S. Karg, D. L. Dheeraj, B. Gotsmann, H. Weman, H. Riel
Nature Communications5, 3655, 2014

2013

An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

L. De Michielis, N. Dagtekin, A. Biswas, L. Lattanzio, L. Selmi, M. Luisier, H. Riel, A. M. Ionescu
Applied Physics Letters103, 123509, 2013

Thermal Transport across Graphene in Nanoscopic Contacts

F. Menges, H. Riel, A. Stemmer, C. Dimitrakopoulos, B. Gotsmann
Physical Review Letters111, 205901, 2013

Tuning the Light Emission from GaAs Nanowires over 290 meV with Uniaxial Strain

Giorgio Signorello, Siegfried Karg, Mikael T. Björk, Bernd Gotsmann, and Heike Riel
Nano Lett., 13(3), 917-924, ACS Publications, 2013

In situ doping of catalyst-free InAs nanowires

H. Ghoneim, P. Mensch, H. Schmid, C. D Bessire, R. Rhyner, A. Schenk, C. Rettner, S. Karg, K. E Moselund, H. Riel, M. T Björk
Nanotechnology 23(50), 505708, IOP Publishing, 2013

Bonding and Electronic Transport Properties of Fullerene and Fullerene Derivatives in Break-Junction Geometries

E. Lörtscher, V. Geskin, B. Gotsmann, J. Fock, J. K. Sørensen, T. Bjørnholm, J. Cornil, H. S. J. van der Zant, H. Riel
Small 9(2), 209-214, 2013

Measurement of Thermoelectric Properties of Single Semiconductor Nanowires

S. Karg, P. Mensch, H. Schmid, P. Das Kanungo, H. Ghoneim, V. Schmidt, M. Björk, V. Troncale, H. Riel
Journal of Electronic Materials 42(7), 2409-2414, 2013

Interface State Density of Single Vertical Nanowire MOS Capacitors

P. Mensch, K. E. Moselund, S. Karg, E. Lörtscher, M. T. Björk, H. Riel
IEEE Transactions of Nanotechnology 12(3), 279, 2013

Nanoscale Origin of Defects at Metal/Molecule Engineered Interfaces

P. N. Nirmalraj, H. Schmid, B. Gotsmann, H. Riel
Langmuir 29(5), 1340-1345, 2013

Tuning the Light Emission from GaAs Nanowires over 290 meV with Uniaxial Strain

G. Signorello, S. Karg, M. T. Björk, B. Gotsmann, H. Riel
Nano Letters13, 917, 2013

Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy

D.L. Dheeraj, A.M. Munshi, O.M. Christoffersen, D.C. Kim, G. Signorello, H. Riel, A.T.J. van Helvoort, H. Weman, B.O. Fimland
Journal of Crystal Growth378, 532-536, 2013

Selective Area Growth of III-V Nanowires on Silicon in a Nanotube Template: Towards Monolithic Integration of Nano-Devices

P. Das Kanungo, H. Schmid, M. T. Björk, L. M. Gignac, C. Breslin, J. Bruley, C. D. Bessire and H. Riel
Nanotechnology 24(22), 225304, 2013

Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behaviour?

L. De Michielis, L. Lattanzio, K. Moselund, H. Riel, and A. M. Ionescu
IEEE Electron Device Letters 34(6), 726, 2013

Electrical and Thermoelectrical Properties of Gated InAs Nanowires

P. Mensch, S. Karg, B. Gotsmann, P. Das Kanungo, V. Schmidt, V. Troncale, H. Schmid and H. Riel
accepted ESSDERC, 2013

Heat dissipation and thermometry in nanosystems: When interfaces dominate

B. Gotsmann, F. Menges, S. Karg, V. Troncale, M. Lantz, P. Mensch, H. Schmid, P. Das Kanungo, U. Drechsler, V. Schmidt, M. Tschudy, A. Stemmer, and H. Riel
Proc. IEEE Device Research Conference, pp. 231-232, 2013

Deterministic assembly of linear gold nanorod chains as a platform for nanoscale applications

A. Rey, G. Billardon, E. Loertscher, K. Moth-Poulsen, N. Stuhr-Hansen, H. Wolf, T. Bjørnholm, A.Stemmer, H. Riel
Nanoscale 5(18), 8680-8688, 2013

2012

Transport Properties of a Single-Molecule Diode

E. Lörtscher, B. Gotsmann, Y. Lee, L. Yu, C. Rettner, H. Riel
ACS Nano 6(6), 4931-4939, 2012

InAs–Si Nanowire Heterojunction Tunnel FETs

K. E. Moselund, H. Schmid, C. Bessire, M. T. Björk, H. Ghoneim, H. Riel
IEEE Electron Device Letters 33(10), 1453-1455, 2012

InAs–Si Heterojunction Nanowire Tunnel Diodes and Tunnel FETs

H. Riel, K. E. Moselund, C. Bessire, M. T. Björk, A. Schenk, H. Ghoneim, H. Schmid
Invited, 2012 IEEE International Electron Devices Meeting (IEDM), pp. 16.6.1-16.6.4

4.1: A 20-inch OLED Display Driven by Super-Amorphous-Silicon Technology

Takatoshi Tsujimura, Yoshinao Kobayashi, Kohji Murayama, Atsushi Tanaka, Mitsuo Morooka, Eri Fukumoto, Hiroki Fujimoto, Junichi Sekine, Keigo Kanoh, Keizo Takeda, others
SID Symposium Digest of Technical Papers, pp. 6-9, 2012

Silicon Nanowire Esaki Diodes

H. Schmid, C.D. Bessire, M.T. Björk, A. Schenk, H. Riel
Nano Letters 12(2), 699-703, ACS Publications, 2012

Quantitative Thermometry of Nanoscale Hot Spots

F. Menges, H. Riel, A. Stemmer, B. Gotsmann
Nano Letters 12(2), 596-601, 2012

InAs nanowire growth on oxide-masked <111> silicon

M.T. Björk, H. Schmid, C.M. Breslin, L. Gignac, H. Riel
Journal of Crystal Growth 344(1), 31-37, Elsevier, 2012

2011

Tunnel field-effect transistors as energy-efficient electronic switches

A.M. Ionescu, H. Riel
Nature 479(7373), 329-337, Nature Publishing Group, 2011

Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High-κ Gate Dielectric

KE Moselund, MT Björk, H. Schmid, H. Ghoneim, S. Karg, E. Lörtscher, W. Riess, H. Riel
IEEE Transactions on Electron Devices 58(9), 2911-2916, 2011

Single photon emission and detection at the nanoscale utilizing semiconductor nanowires

M.E. Reimer, M.P. Van Kouwen, M. Barkelid, M. Hocevar, M.H.M. Van Weert, R.E. Algra, E.P.A.M. Bakkers, M.T. Björk, H. Schmid, H. Riel, others
Journal of Nanophotonics 5(1), 053502, International Society for Optics and Photonics, 2011

Alternative Transistor Concepts

KE Schmid, MT Bjork, M. Richter, H. Ghoneim, CD Bessire, H. Riel
69th Annual Device Research Conference (DRC) , 2011

A statistical approach to inelastic electron tunneling spectroscopy on fullerene-terminated molecules

J. Fock, J.K. Sorensen, E. Lörtscher, T. Vosch, C.A. Martin, H. Riel, K. Kilsaa, T. Bjornholm, H. van der Zant
Phys. Chem. Chem. Phys. 13(32), 14325-14332, 2011

Modular Functionalization of Electrodes by Cross-Coupling Reactions at Their Surfaces

M. Müri, B. Gotsmann, Y. Leroux, M. Trouwborst, E. Lörtscher, H. Riel, M. Mayor
Advanced Functional Materials 21(19), 3706-3714, 2011

CV measurements of single vertical nanowire capacitors

P Mensch, KE Moselund, S Karg, E Lortscher, MT Bjork, H Schmid, H Riel
69th Annual Device Research Conference (DRC), pp. 119-120, 2011

Fabrication of vertical InAs-Si heterojunction tunnel field effect transistors

H Schmid, KE Moselund, MT Bjork, M Richter, H Ghoneim, CD Bessire, H Riel
69th Annual Device Research Conference (DRC), pp. 181-182, 2011

Trap-Assisted Tunneling in Si-InAs Nanowire Heterojunction Tunnel Diodes

C.D. Bessire, M.T. Björk, H. Schmid, A. Schenk, K.B. Reuter, H. Riel
Nano letters 11(10), 4195-4199, ACS Publications, 2011

Influence of the Anchor Group on Charge Transport through Single-Molecule Junctions

E. Lörtscher, C.J. Cho, M. Mayor, M. Tschudy, C. Rettner, H. Riel
ChemPhysChem 12(9), 1677-1682, 2011

2010

K. E. Moselund, H. Ghoneim, H. Schmid, M. Björk, S. Karg, D. Webb, M. Tschudy, R. Beyeler and H. Riel

Comparison of VLS grown Si NW Tunnel FETs with different gate stacks
Proc. of the IEEE European Solid State Device Research Conference, pp. 448-451, 2010

Si-InAs heterojunction Esaki tunnel diodes with high current densities

MT Björk, H. Schmid, CD Bessire, KE Moselund, H. Ghoneim, S. Karg, E. Lörtscher, H. Riel
Applied Physics Letters97, 163501, 2010

Off axis holography of doped and intrinsic silicon nanowires: Interpretation and influence of fields in the vacuum

M.I. Hertog, JL Rouviere, H. Schmid, D. Cooper, MT Björk, H. Riel, F. Dhalluin, P. Gentile, P. Ferret, F. Oehler, others
Journal of Physics: Conference Series, pp. 012027, 2010

VLS-grown silicon nanowires — Dopant deactivation and tunnel FETs

MT Björk, KE Moselund, H Schmid, H Ghoneim, S Karg, E Lörtscher, J Knoch, W Riess, H Riel
Silicon Nanoelectronics Workshop (SNW), pp. 1-2, 2010

Single photon emission and detection at the nanoscale utilizing semiconductor nanowires

M. E. Reimer, M. P. van Kouwen, M. Hocevar, M. Markelid, R. E. Algra, E. A. P. Bakkers, M. T. Björk, H. Schmid, H. Riel, L. Kouwenhoven, V. Zwiller
Proc. SPIE 2010, San Diego

Enabling energy efficient tunnel FET-CMOS co-design by compact modeling and simulation

R. Rhyner, C. Bessire, L. De Michielis, A. Biswas, A. Schenk, H. Riel, A.M. Ionescu
Nanotera, 2010

Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors

K. E. Moselund, H. Ghoneim, H. Schmid, MT Björk, E. Lörtscher, S. Karg, G. Signorello, D. Webb, M. Tschudy, R. Beyeler, others
Nanotechnology 21(43), 435202, 2010

Molecular Electronics Resonant Transport through Single Molecules

E. Lortscher, H. Riel
CHIMIA International Journal for Chemistry 64(6), 376--382, Swiss Chemical Society, 2010

2009

H.. Schmid, M. T. Bjrk, J. Knoch, S. Karg, H. Riel, W. Riess

Doping limits of grown in-situ doped silicon nanowires using phosphine
Nano Letters9, 173, 2009

Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs

H. Ghoneim, J. Knoch, H. Riel, D. Webb, MT Bjork, S. Karg, E. Lortscher, H. Schmid, W. Riess
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on, pp. 69--72

PYRROLO-TTF-BASED MOLECULAR ELECTRONICS

S. Bilan, LA Zotti, F. Pauly, JO Jeppesen, H. Riel, JC Cuevas
TNT 2009, Barcelona, Spain

VLS-grown silicon nanowire tunnel FET

KE Moselund, H Ghoneim, MT Bjork, H Schmid, S Karg, E Lortscher, W Riess, H Riel
Device Research Conference, pp. 2--24, 2009

Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors

H. Ghoneim, J. Knoch, H. Riel, D. Webb, MT Bjork, S. Karg, E. Lortscher, H. Schmid, W. Riess
Applied Physics Letters 95(21), 213504-213504, AIP, 2009

Comparison of VLS grown Si NW tunnel FETs with different gate stacks

KE Moselund, H Ghoneim, MT Bjork, H Schmid, S Karg, E Lortscher, W Riess, H Riel
Proceedings of the European Solid State Device Research Conference "ESSDERC'09", pp. 448-451, 2009

Mapping active dopants in single silicon nanowires using off-axis electron holography

M.I. den Hertog, H. Schmid, D. Cooper, J.L. Rouviere, M.T. Björk, H. Riel, P. Rivallin, S. Karg, W. Riess
Nano Letters 9(11), 3837-3843, ACS Publications, 2009

Donor deactivation in silicon nanostructures

M.T. Björk, H. Schmid, J. Knoch, H. Riel, W. Riess
Nature Nanotechnology 4(2), 103-107, Nature Publishing Group, 2009

2008

Toward nanowire electronics

J. Appenzeller, J. Knoch, M.T. Bjork, H. Riel, H. Schmid, W. Riess
Electron Devices, IEEE Transactions on 55(11), 2827-2845, IEEE, 2008

Charge transport through single molecules — Towards a single molecule memory

E. Lörtscher, M. Mayor, M. Elbing, J.W. Ciszek, J.M. Tour, M. Trouwborst, R. Scherwitzl, H. Riel
Proc. of NanoEurope 2008

Silicon nanowire tunneling field-effect transistors

M.T. Björk, J. Knoch, H. Schmid, H. Riel, W. Riess
Applied Physics Letters 92(19), 193504, AIP, 2008

One-dimensional nanoelectronic devices-towards the quantum capacitance limit

J. Knoch, MT Bjork, H. Riel, H. Schmid, W. Riess
Device Research Conference, 2008, pp. 173--176

Charge Transport through Molecular Rods with Reduced pi-Conjugation

E. Lörtscher, M. Elbing, M. Tschudy, C. von Hänisch, H.B. Weber, M. Mayor, H. Riel
ChemPhysChem 9(15), 2252-2258, 2008

Charge Transport Through a Cardan-Joint Molecule

M. Ruben, A. Landa, E. Lörtscher, H. Riel, M. Mayor, H. Görls, H.B. Weber, A. Arnold, F. Evers
Small 4(12), 2229-2235, 2008

Doping limits of grown in situ doped silicon nanowires using phosphine

H. Schmid, M.T. Björk, J. Knoch, S. Karg, H. Riel, W. Riess
Nano Letters 9(1), 173-177, ACS Publications, 2008

Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si (111) using silane

H. Schmid, MT Bjork, J. Knoch, H. Riel, W. Riess, P. Rice, T. Topuria
Journal of Applied Physics 103(2), 024304-024304, AIP, 2008

2007

Statistical approach to investigating transport through single molecules.

Emanuel Löortscher, Heiko B Weber, Heike Riel
Physical Review Letters 98(17), 176807-176807, 2007

Semiconducting Nanowire Devices

MT Bjork, J.K. Hayden, H. Riel, H. Schmid, W. Riess, A.L. Power, H. Scalable, V.D.G.M.U. Novel
65th AnnualDevice Research Conference , 2007

Impact ionization FETs based on silicon nanowires

MT Bjork, O. Hayden, J. Knoch, H. Riel, H. Schmid, W. Riess
Device Research Conference, 2007 65th Annual, pp. 171--172

A single-molecule switch and memory element

E. Lörtscher, JM Tour, JW Ciszek, H. Riel
Journal of Physics: Conference Series, pp. 987, 2007

Fully Depleted Nanowire Field-Effect Transistor in Inversion Mode

O. Hayden, M.T. Björk, H. Schmid, H. Riel, U. Drechsler, S.F. Karg, E. Lörtscher, W. Riess
Small 3(2), 230-234, 2007

Vertical surround-gated silicon nanowire impact ionization field-effect transistors

MT Bjork, O Hayden, H Schmid, H Riel, W Riess
Applied Physics Letters 90(14), 142110-142110, AIP, 2007

2006

Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor

V. Schmidt, H. Riel, S. Senz, S. Karg, W. Riess, U. Gösele
Small 2(1), 85-88, Wiley Online Library, 2006

Reversible and Controllable Switching of a Single-Molecule Junction

E. Lörtscher, J.W. Ciszek, J. Tour, H. Riel
Small 2(8-9), 973-977, 2006

2005

Optimizing OLED Structures for a-Si Display Applications via Combinatorial Methods and Enhanced Outcoupling

W. Riess, T. Beierlein, H. Riel
in Physics of Organic Semiconductors ed. W. Brütting, Chihaya Adachi, Wiley-VCH, 2005

Epitaxial silicon nanowire surround-gate field-effect transistors

V. Schmidt, S. Senz, H. Riel, S. Karg, W. Riess
MPI annual report, 2005

2004

Parameter Extraction and Validation of an Electronic and Optical Model for Organic Light-emitting Devices

B. Ruhstaller, T.A. Beierlein, R. Gmiir, S. Karg, H. Riel, G. Sartoris, H. Schwarzenbach, W. Riess
Simulation of semiconductor processes and devices 2004: SISPAD 2004, 157, Springer Verlag

Optimizing OLED Structures for a-Si Display Applications via Combinatorial Methods and Enhanced Outcoupling

W Riess, TA Beierlein, H Riel
physica status solidi (a) 201(6), 1360-1371, Wiley Online Library, 2004

2003

Simulating electronic and optical processes in multilayer organic light-emitting devices

Beat Ruhstaller, Tilman Beierlein, Heike Riel, Siegfried Karg, J Campbell Scott, Walter Riess
Selected Topics in Quantum Electronics, IEEE Journal of 9(3), 723--731, IEEE, 2003

Investigation of internal processes in organic light-emitting devices using thin sensing layers

TA Beierlein, B Ruhstaller, DJ Gundlach, H Riel, S Karg, C Rost, W Riess
Synthetic Metals 138(1), 213-221, Elsevier, 2003

Phosphorescent top-emitting organic light-emitting devices with improved light outcoupling

H. Riel, S. Karg, T. Beierlein, B. Ruhstaller, W. Riess
Applied physics letters82, 466, 2003

Preparation of metallic films on elastomeric stamps and their application for contact processing and contact printing

H. Schmid, H. Wolf, R. Allenspach, H. Riel, S. Karg, B. Michel, E. Delamarche
Advanced Functional Materials 13(2), 145-153, Wiley Online Library, 2003

2002

Tuning of Electrical and Optical Properties of Organic LEDs Using Combinatorial Device Fabrication

T. Beierlein, H. Riel, B. Ruhstaller, B. Crone, H. Hofmann, S. Karg, W. Riess
Journal of the Society for Information Display 10(4), 311-315, 2002

Role of Copper-Phthalocyanine in Multilayer Organic LEDs Based on Small Molecules

H. Riel, T. A. Beierlein, S. Karg, W. Riess
SPIE Proceedings, pp. 148-155, 2002

Optimizing OLED Performance by Using Interference Effects

H. . Riel, T. Beierlein, S. Karg, W. Riess
Proceedings 11th International Workshop on Inorganic and Organic Electroluminescence, pp. 317-320, 2002

Combinatorial device fabrication and optimization of multilayer organic LEDs

Tilman A Beierlein, Hans-Peter Ott, Horst Hofmann, Heike Riel, Beat Ruhstaller, Brian Crone, Siegfried Karg, Walter Riess
Proc. SPIE, pp. 178--186, 2002

2001

Influence of Trapped and Interfacial Charges in Organic Multi-Layer Light-Emitting Devices

W. Riess, H. Riel, T. Beierlein, W. Brütting, P. Müller, P.F. Seidler
IBM Journal of Research and Development 45(1), 77-88, 2001

Combinatorial Device Fabrication and Optimization of Multilayer Organic LEDs

T. Beierlein, H-P. Ott, H. Hofmann, H. Riel, B. Ruhstaller, B. Crone, S. Karg, W. Riess
SPIE Proceedings, pp. 178-186, 2001

Grading Interfaces  A New Concept to Improve Device Performance in Organic Multilayer Light-Emitting Diodes

H. Riel, S. Barth, T. Beierlein, W. Brütting, S. Karg, P. Müller, W. Riess
SPIE Proceedings, pp. 167-174, 2001

Transient and steady-state charge processes in multilayer organic light-emitting diodes

J. Campbell Scott, B. Ruhstaller, H. Riel, W. Riess, S. Barth, S.A. Carter
APS March Meeting Abstracts, pp. 9007, 2001

Transient and steady-state behavior of space charges in multilayer organic light-emitting diodes

B Ruhstaller, SA Carter, S Barth, H Riel, W Riess, JC Scott
Journal of Applied Physics 89(8), 4575-4586, AIP, 2001

Influence of trapped and interfacial charges in organic multilayer light-emitting devices

W. Brütting, H. Riel, T. Beierlein, W. Riess
Journal of Applied Physics 89(1), 1704, IBM, 2001

2000

Numerical simulation of transient and steady-state behavior of heterostructure organic LEDs

B. Ruhstaller, SA Carter, JC Scott, S. Barth, H. Riel, W. Riess
Compound Semiconductors, 2000 IEEE International Symposium on, pp. 413--418

Electron Mobility in Alq3 Determined via Transient Electroluminescence from Single-and Multilayer Organic Light-Emitting Diodes

S. Barth, P. Müller, H. Riel, PF Seidler, W. Riess, H. Vestweber, H. Bässler
Technical Report RZ 3245 (# 93291), 2000

Electron injection into an Alq3 single-layer organic light-emitting diode

S. Barth, P. Müller, H. Riel, PF Seidler, W. Riess, H. Vestweber, U. Wolf, H. Bässler
Synthetic Metals111, 327-330, Elsevier, 2000

Influence of space charges on the current-voltage characteristic of organic light-emitting devices

H. Riel, T. Beierlein, E. Haskal, W. Riess, others
Synthetic Metals111, 303-306, Elsevier, 2000

Kelvin probe investigations of metal work functions and correlation to device performance of organic light-emitting devices

TA Beierlein, W. Brütting, H. Riel, EI Haskal, P. Müller, W. Riess
Synthetic Metals111, 295-297, Elsevier, 2000

1999

Temperatur Stability of OLEDs Using Amorphous Compounds With Spiro-Bifluorene Core

H. Spreitzer, H. Schenk, J. Saleck, F. Weissoertel, H. Riel, W. Riess
SPIE Proceedings, pp. 316-324, 1999

Organic-inorganic multilayer structures: a novel route to highly efficient organic light-emitting diodes

Walter Riess, Heike Riel, Paul F Seidler, Horst Vestweber
Synthetic Metals 99(3), 213-218, Elsevier, 1999

Current injection from a metal to a disordered hopping system. III. Comparison between experiment and Monte Carlo simulation

S. Barth, U. Wolf, H. Bässler, P. Müller, H. Riel, H. Vestweber, PF Seidler, W. Riess
Physical Review B 60(12), 8791, APS, 1999

1998

Influence of charge carrier injection on the device performance of blue organic light-emitting diodes

Heike Riel, Horst Vestweber, Walter Riess
Optoelectronics and High-Power Lasers & Applications, pp. 240-247, 1998