Qinghuang Lin  Qinghuang Lin photo       

contact information

Research Staff Member, Project Manager and IBM Master Inventor
Thomas J. Watson Research Center, Yorktown Heights, NY USA
  +1dash914dash945dash2366

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Patents

Granted Patents

o   US9490202: Self-aligned Airgap Interconnect Structures, Qinghuang Lin, Benjamin Fletcher and Cyril Cabral Jr., 11/08/2016 

o   US9490164: Techniques for Forming Contacts for Active BEOL, Sebastian U. Engelmann, Steve J. Holmes, Qinghuang Lin,Nathan P. Marchack, Eugene J. O'Sullivan,11/08/2016

o   US9484248: Patternable Dielectric Film Structure With Improved Lithography and Method of Fabricating Same, Qinghuang Lin and Deborah A. Neumayer, 11/01/2016

o   US9472450: Graphene Cap for Copper Interconnect Structures, Griselda Bonilla, Christos D. Dimitrakopoulos, Alfred Grill, James B. Hannon, Qinghuang Lin, Deborah A. Neumayer, Satoshi Oida, John A. Ott, and Dirk Pfeiffer, 10/18/2016 

o   US9431295: Interconnect Structure Including a Modified Photoresist as a Permanent Interconnect Dielectric and Method of Fabricating Same, Qinghuang Lin, 08/30/2016

o   US9364832: Nanofluidic Channels with Gradual Depth Change for Reducing Entropic Barrier of Biopolymers, Qinghuang Lin, Gustavo Stolovitzky, Chao Wang, and Deqiang Wang, 06/14/2016

o   US9346052: Nanofluidic Channels with Gradual Depth Change for Reducing Entropic Barrier of Biopolymers, Qinghuang Lin, Gustavo Stolovitzky, Chao Wang, and Deqiang Wang, 05/24/2016

o   US9343354: Middle of Line Structures and Methods for Fabrication, Qinghuang Lin and Ying Zhang, 05/17/2016

o   US9322061: Nanochannel Device with Three Dimensional Gradient by Single Step Etching for Molecular Detection, Jingwei Bai, Qinghuang Lin, Gustavo Stolovitzky, Chao Wang, and Deqiang Wang, 04/26/2016

o   US9299847: Printed Transistor and Fabrication Method, Qinghuang Lin, Minhua Lu, and Robert Wisnieff, 03/26/2016

US9245791: Method for Fabricating a Contact, Qinghuang Lin and Ying Zhang, 01/26/2016

o   US9236298: Methods for Fabrication Interconnect Structures With Functional Components and Electrical Conductive Contact Structures on a Same Level, Qinghuang Lin and Dirk Pfeiffer, 01/12/2016

o   US9209126: Self-Aligned Fine Pitch Permanent on-Chip Interconnect Structures and Method of Fabrication, Qinghuang Lin, Sanjay Mehta, and Hosadurga K. Shobha, 12//08/2015

o  US9196523: Self-aligned permanent on-chip interconnect structures, Qinghuang Lin, 11//24/2015

o   US9171742: Alignment of Integrated Circuit Chip Stack, E. Colgan, S. A. Cordes, D. Edelstein, V. Khanna, K. Latzko, Qinghuang Lin, P. J. Sorce, S. Sri-Jayantha, R. Wisnieff, R. Yu, 10/27/2015

o  US9087753: Printed Transistor and Fabrication Method, Qinghuang Lin, Minhua Lu, Robert Wisnieff, 07/21/2015

o   US9059249: Interconnect Structures Containing a Photo-Patternable Low-k Dielectric with a Curved Sidewall Surface, Maxime Darnon and Qinghuang Lin, 05/16/2015

o   US9054160: Interconnect Structure and Method of Fabricating Permanent On-Chip Interconnect Structures by Image Reversal Robert L. Bruce, Qinghuang Lin, Alshakim Nelson, Satyanarayana V. Nitta, Dirk Pfeiffer, and Jitendra S. Rathore, 06/09/2015

o   US9035462: Airgap Interconnect Structures with Patternable Low-K Materials and Method of Fabrication, Qinghuang Lin, 05/19/2015

o   JP5739196: Structures and methods for air gap integration, Larry A. Clevenger, Maxime Darnon, Qinghuang Lin, Anthony D. Lisi, and Satyanarayana V. Nitta, 05/01/2015

o   US9012587: Photo-Patternable Dielectric Materials Curable to Porous Dielectric Materials, Formulations, Precursors and Methods of Use Thereof, Robert D. Allen, Phillip Joe Brock, Blake W. Davis, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, and Ratnam Sooriyakumaran, 04/21/2015

o   US8946373: Photo-Patternable Dielectric Materials Curable to Porous Dielectric Materials, Formulations, Precursors and Methods of Use Thereof, Phillip Joe Brock, Blake W. Davis, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, Jitendra S. Rathore, and Ratnam Sooriyakumaran, 04/14/2015

o   US8952539: Method for Fabrication of an Air Gap Containing Interconnect Structure, Larry Clevenger, Maxime Darnon, Satya V Nitta, Anthony D Lisi, and Qinghuang Lin, 02/10//2015

o   US8946371: Photo-Patternable Dielectric Materials Curable to Porous Dielectric Materials, Formulations, Precursors and Methods of Use Thereof, Phillip Joe Brock, Blake W. Davis, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, Jitendra S. Rathore, and Ratnam Sooriyakumaran, 02/03/2015

o  US8920567: Post Metal Chemical-Mechanical Planarization Cleaning Process, V. Devarapalli, C. J. Goyette, M. R. Kennett, M. Khojasteh, Qinghuang Lin, J. J. Steffes, A. Ticknor, W. Tseng, 12/30/2014

o   US8916978: Interconnect Structure and Method of Fabricating, Qinghuang Lin, Dirk Pfeiffer, Ratnam Sooriyakumaran, 12/23/2014

o   US8900988: Method for forming self-aligned airgap interconnect structures, Qinghuang Lin, Cyril Cabral Jr., Benjamin Fletcher, 12/02/2014

o   US8896120: Structures and methods for air gap integration, Larry A. Clevenger, Maxime Darnon, Qinghuang Lin, Anthony D. Lisi, Satyanarayana V. Nitta, 11/25/2014

o   US8895433: Method of forming a graphene cap for copper interconnect structures, Griselda Bonilla, Christos D. Dimitrakopoulos, Alfred Grill, James B. Hannon, Qinghuang Lin, Deborah A. Neumayer, Satoshi Oida, John A. Ott, and Dirk Pfeiffer, 11/25/2014

o   US8890318: Middle of Line Structure, Qinghuang Lin and Ying Zhang, 11/18/2014

o   US8853856: Methodology for Evaluation of Electrical Characteristics of Carbon Nanotubes, Maxime Darnon, Gerald Gibson, Pratik P. Joshi, and Qinghuang Lin, 10/07/2014

o   JP5623529: Photo-Patternable Dielectric Materials and Formulations and Methods of Use, R. Allen, P. Brock, B. Davis, Qinghuang Lin, R. Miller, A. Nelson, R. Sooriyakumaran, 10/03/2014

o   US8828749: Methodology for Evaluation of Electrical Characteristics of Carbon Nanotubes, Maxime Darnon, Gerald Gibson, Pratik P. Joshi, and Qinghuang Lin, 09/09/2014

o   CN ZL201080042435.2: Patternable Low-K Dielectric Interconnect Structure With a Graded Cap Layer and Method of Fabrication, Qinghuang Lin and Deborah A. Neumayer, 09/10/2014

o   US8822137: Self-Aligned Fine Pitch Permanent on-Chip Interconnect Structures and Method of Fabrication, Qinghuang Lin, Sanjay Mehta, and Hosadurga K. Shobha, 09/02/2014

o   US8795556: Self-Aligned Permanent On-Chip Interconnect Structure Formed by Pitch Splitting, Qinghuang Lin, 08/05/2014

o   CN ZL201080038243.4: Photo-Patternable Dielectric Materials and Formulations and Methods of Use, R. Allen, P. Brock, B. Davis, Qinghuang Lin, R. Miller, A. Nelson, R. Sooriyakumaran, 07/09/2014

o   UK2486078: Patternable Low-K Dielectric Interconnect Structure With a Graded Cap Layer and Method of Fabrication, Qinghuang Lin and Deborah A. Neumayer, 05/07/2014

o   US8659115: Airgap Interconnect Structures with Improved Patternable Low-K Materials and Method of Fabrication, Qinghuang Lin, 02/25/2014

o   US8642252: Methods for fabrication of an air gap-containing interconnect structure, Larry A. Clevenger, Maxime Darnon, Qinghuang Lin, Anthony D. Lisi, Satyanarayana V. Nitta, 02/04/2014

o   US8637395: Methods for photo-patternable low-k (PPLK) integration with curing after pattern transfer, Maxime Darnon, Qinghuang Lin, 01/28/2014

o   US8629561: Air gap-containing interconnect structure having photo-patternable low k material, Larry A. Clevenger, Maxime Darnon, Qinghuang Lin, Anthony D. Lisi, Satyanarayana V. Nitta, 01/14/2014 

o   US8623761: Method of Forming a Graphene Cap for Copper Interconnect Structures, Griselda Bonilla, Christos D. Dimitrakopoulos, Alfred Grill, James B. Hannon, Qinghuang Lin, Deborah A. Neumayer, Satoshi Oida, John A. Ott, and Dirk Pfeiffer, 01/07/2014

o   US8618663: Patternable dielectric film structure with improved lithography and method of fabricating same, Qinghuang Lin and Deborah A. Neumayer, 12/31/2013

o   US8617941: High-Speed Graphene Transistor and Method of Fabrication by Patternable Hard Mask Materials, Darmon B. Farmer, Qinghuang Lin, Yu-Ming Lin, 12/31/2013

o   US8519540: Self-Aligned Dual-Damascene BEOL Structures with Patternable Low-K Material and Method of Forming the Same, Shyng-Tsong Chen, Qinghuang Lin, Sampath Purushothaman, Terry A. Spooner, Shawn M. Walsh, 08/27/2013

o   JP5328111: Adhesion enhancement for metal/dielectric interface, Chih-Chao Yang, Griselda Bonilla, Qinghuang Lin, Terry A. Spooner, 08/02/2013

o   US8487411: Multiple Patterning Using Improved Patternable Low-K Dielectric Materials, Qinghuang Lin, 07/16/2013 

o   JP5324734: SiCOH Dielectric Material With Improved Toughness and Improved Si-C Bonding, Semiconductor Device Containing the Same, and Method to Make the Same, Daniel C. Edelstein, Stephen M. Gates, Alfred Grill, Michael Lane, Qinghuang Lin, Robert D. Miller,; Deborah A. Neumayer, Son Van Nguyen, 07/26/2013

o   US8476758: Airgap-Containing Interconnect Structure with Patternable Low-K Material and Method of Fabricating, Qinghuang Lin, 07/02/2013

o   US8475667: Method of Patterning Photosensitive Material on a Substrate Containing a Latent Acid Generator, Maxime Darnon, Pratik P. Joshi, Qinghuang Lin, 07/02/2013

o   US8470516: Method of Forming a Relief Pattern by E-Beam Lithography Using Chemical Amplification, and Derived Articles, Robert D. Allen, Luisa Bozano, Phillip Brock, Qinghuang Lin, Alshakim Nelson, Ratnam Sooriyakumaran, 06/25/2013

o   US8461039: Patternable Low-K Dielectric Interconnect Structure With a Graded Cap Layer and Method of Fabrication, Qinghuang Lin and Deborah A. Neumayer, 06/11/2013

o   JP5285814: Patternable Low-K Dielectric Interconnect Structure With a Graded Cap Layer and Method of Fabrication, Qinghuang Lin and Deborah A. Neumayer, 06/07/2013

o   US8450854: Interconnect Structures with Patternable Low-K Dielectrics and Method of Fabricating Same, Qinghuang Lin, Shyng-Tsong Chen, 05/28/2013

o   US8445377: Mechanically Robust Metal/Low-K Interconnects, Qinghuang Lin, Terry A. Spooner, Darshan D. Gandhi, Christy S. Tyberg, 05/21/2013

o   TWI397123: SiCOH Dielectric Material With Improved Toughness and Improved Si-C Bonding, Semiconductor Device Containing the Same, and Method to Make the Same, Daniel C. Edelstein, Stephen M. Gates, Alfred Grill, Michael Lane, Qinghuang Lin, Robert D. Miller,; Deborah A. Neumayer, Son Van Nguyen, 05/21/2013

o   US8431670: Photo-Patternable Dielectric Materials and Formulations and Methods of Use, R. Allen, P. Brock, B. Davis, Qinghuang Lin, R. Miller, A. Nelson, R. Sooriyakumaran, 04/30/2013

o   US8415248: Self-Aligned Dual-Damascene BEOL Structures with Patternable Low-K Material and Method of Forming the Same, S.-T. Chen, Qinghuang Lin, S. Purushothaman, T. Spooner, S. Walsh, 04/09/2013

o   US8389663: Photo-Patternable Dielectric Materials Curable to Porous Dielectric Materials, Formulations, Precursors and Methods of Use Thereof, P. Brock, B. Davis, Qinghuang Lin, R. Miller, A. Nelson, J. S. Rathore, R. Sooriyakumaran, 03/05/2013

o   US8373271: Interconnect Structure With an Oxygen-Doped SiC Antireflective Coating and Method of Fabrication, D. Goldfarb, R. Kwong, Qinghuang Lin, D. Neumayer, H. Shobha, 02/12/2013

o   US8367540: Interconnect Structure Including a Modified Photoresist as a Permanent Interconnect Dielectric and Method of Fabricating Same, Qinghuang Lin, 02/05/2013

o US8354339: Methods to Form Self-Aligned Permanent On-Chip Interconnect Structures, Qinghuang Lin, 01/15/2013

o US8334203: Interconnect Structure and Method of Fabricating, Qinghuang Lin, Dirk Pfeiffer and Ratnam Sooriyakumaran, 12/18/2012

o US8298937: Interconnect Structures Fabricated Without Reactive-Ion Etch Process, Maxime Darnon, Jeffrey Gambino, Elbert Huang and Qinghuang Lin, 10/30/2012

o US8241992: Method for Air Gap Interconnect Integration Using Photo-Patternable Low K Material, Larry Clevenger, Maxime Darnon, Qinghuang Lin, Anthony D Lisi, Satya V Nitta, 08/14/2012

o US8202783:Patternable Low-K Dielectric Interconnect Structure With a Graded Cap Layer and Method Of Fabrication, Qinghuang Lin, Deborah A. Neumayer, 06/19/2012

o US8163658: Multiple Patterning Using Improved Patternable Low-K Dielectric Materials, Qinghuang Lin, 04/24/2012

o US8101236: Method of Fabricating a SiCOH Dielectric Material With Improved Toughness and Improved Si-C Bonding, Daniel C. Edelstein, Stephen M. Gates, Alfred Grill, Michael Lane, Qinghuang Lin, Robert D. Miller, Deborah A. Neumayer, Son Van Nguyen, 1/24/2012

o US8084862: Interconnect structures with patternable low-k dielectrics and method of fabricating same, Qinghuang Lin, S. Chen, 12/27/2011

o US8029971: Photopatternable dielectric materials for BEOL applications and method for use, R. Allen, P. Brock, B. Davis, Qinghuang Lin, R. Miller, A. Nelson, 10/04/2011

o US8017522: Mechanically Robust Metal/Low-K Interconnects, Qinghuang Lin, T. Spooner, D. Gandhi, C. Tyberg, 9/13/2011

o US7944055: Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures, R. Allen, P. Brock, B. Davis, W. Huang, Qinghuang Lin, A. Nelson, S. Purushothaman, R. Sooriyakumaran, 05/17/2011

o ZL200910001432.3: Airgap Interconnect Structures with Patternable Low-K Materials and Method of Fabrication, Qinghuang Lin, 4/6/2011

o US7919225: Photopatternable dielectric materials for BEOL applications and method for use, R. Allen, P. Brock, B. Davis, Qinghuang Lin, R. Miller, A. Nelson, 4/5/2011

o US7892648: SiCOH Dielectric Material With Improved Toughness and Improved Si-C Bonding, Semiconductor Device Containing the Same, and Method to Make the Same, Daniel C. Edelstein, Stephen M. Gates, Alfred Grill, Michael Lane, Qinghuang Lin, Robert D. Miller, Deborah A. Neumayer, Son Van Nguyen, 2/22/2011

o US7867689: Photopatternable dielectric materials for BEOL applications and method for use, R. Allen, P. Brock, B. Davis, Qinghuang Lin, R. Miller, A. Nelson, 1/11/2011

o US7816253: Surface treatment of inter-layer dielectric, Shyng-Tsong Chen, Qinghuang Lin, Kelly Malone, Sanjay Mehta, Terry A. Spooner, Chih-Chao Yang, 10/19/2010

o US7811923: Integrated wafer processing system for integration of patternable dielectric materials, Qinghuang Lin, S. Purushothaman, R. Wisnieff, 10/12/2010

o US7795740: Adhesion enhancement for metal/dielectric interface, Chih-Chao Yang, Griselda Bonilla, Qinghuang Lin, Terry A. Spooner, 09/14/2010

o US7736833: Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof, Marie Angelopoulos, Katherina E. Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R. Medeiros, Wayne Martin Moreau, Karen E. Petrillo, John P. Simons, 06/15/2010

o US 7714079: Patternable low dielectric constant materials and their use in ULSI interconnection, Qinghuang Lin, R. Sooriyakumaran, 5/11/2010

o US7709370: Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures, R. Allen, P. Brock, B. Davis, W. Huang, Qinghuang Lin, A. Nelson, S. Purushothaman, R. Sooriyakumaran, 05/04/2010

o US7709177: Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof, Marie Angelopoulos, Katherina E. Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R. Medeiros, Wayne Martin Moreau, Karen E. Petrillo, John P. Simons, 05/04/2010

o US7666794: Multiple patterning using patternable low-k dielectric materials, Qinghuang Lin, 02/23/2010

o TWI320515: Patternable low dielectric constant materials and their use in ULSI interconnection, Qinghuang Lin, R. Sooriyakumaran, 02/11/2010

o US7598169: Method to Remove BEOL Sacrificial Materials and Chemical Residues by Irradiation, Qinghuang Lin, Elbert Huang, Christy S.Tyberg, Ronald DellaGuardia, 10/06/2009

o ZL200610002175.1: SiCOH Dielectric Material With Improved Toughness and Improved Si-C Bonding, Semiconductor Device Containing the Same, and Method to Make the Same, Daniel C. Edelstein, Stephen M. Gates, Alfred Grill, Michael Lane, Qinghuang Lin, Robert D. Miller, Deborah A. Neumayer, Son Van Nguyen, 09/09/2009

o US7479306: SiCOH Dielectric Material With Improved Toughness and Improved Si-C Bonding, Semiconductor Device Containing the Same, and Method to Make the Same, Daniel C. Edelstein, Stephen M. Gates, Alfred Grill, Michael Lane, Qinghuang Lin, Robert D. Miller, Deborah A. Neumayer, Son Van Nguyen, 01/20/2009

o US7446058: Adhesion enhancement for metal/dielectric interface, Chih-Chao Yang, Griselda Bonilla, Qinghuang Lin, Terry A. Spooner, 11/04/2008

o US7361444: Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof, Marie Angelopoulos, Katherina E. Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R. Medeiros, Wayne Martin Moreau, Karen E. Petrillo, John P. Simons, 04/22/2008

o US7306853: Patternable low dielectric constant materials and their use in ULSI interconnection, Qinghuang Lin, R. Sooriyakumaran, 12/11/2007

o US7214603: Method for fabricating interconnect structures with reduced plasma damage, Ronald Dellaguardia, Elbert Huang, Qinghuang Lin, Robert Miller, 05/08/2007

o JP3935874: Patternable low dielectric constant materials and their use in ULSI interconnection, Qinghuang Lin, R. Sooriyakumaran, 03/30/2007

o US7141692: Molecular photoresists containing nonpolymeric silsesquioxanes, Robert David Allen, Wu-Song Huang, Mahmoud Khojasteh, Qinghuang Lin, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa D.Truong, 11/18/2006

o US7041748: Patternable low dielectric constant materials and their use in ULSI interconnection, Qinghuang Lin, R. Sooriyakumaran, 05/09 2006

o KR562238: Patternable low dielectric constant materials and their use in ULSI interconnection, Qinghuang Lin, R. Sooriyakumaran, 03/13/2006

o US6821718: Radiation sensitive silicon-containing negative resists and use thereof, Marie Angelopoulos, Ari Aviram, Wu-Song Huang, Ranee Kwong, Robert N. Lang, Qinghuang Lin, Wayne M. Moreau, 11/23/2004

o TW204484: Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups. K.J. Chen, R.A. DellaGuardia, W.S. Huang, A.D. Katnani, M. Khojasteh, Qinghuang Lin, 10/14/2004

o US6653045: Radiation sensitive silicon-containing negative resists and use thereof, Marie Angelopoulos, Ari Aviram, Wu-Song Huang, Ranee Kwong, Robert N. Lang, Qinghuang Lin, Wayne M. Moreau, 11/15/2003

o US6344305: Radiation sensistive silicon containing resists, Qinghuang Lin, A. Katnani, D. LaTulipe, D. Seeger, B. Brunsvold, A. Afzali-Ardakani, 02/05/2002

o US6340734: Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method, Qinghuang Lin, A.D. Katnani, M. Angelopoulos, R. Sooriyakumaran, 01/22/2002

o US6303275: Method for resist filling and planarization of high aspect ratio features, John Golz, Qinghuang Lin, Alan Thomas, Teresa Wu, Christopher Waskiewicz, 10/16/2001

o US6303263: Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups, K.J. Chen, R.A. DellaGuardia, W.S. Huang, A.D. Katnani, M. Khojasteh, Qinghuang Lin, 10/16/2001

o US6268436: Approach to formulating irradiation sensitive positive resists, K.J. Chen, R.A. DellaGuardia, W.S. Huang, A.D. Katnani, M. Khojasteh, Qinghuang Lin, 07/31/2001

o US6258732: Method of forming a patterned organic dielectric layer on substrate, Qinghuang Lin, R. Mih and K. Petrarca, 07/10/2001

o US6210856: Resist composition and process of forming a patterned resist layer on a substrate, Qinghuang Lin, N. Petal, G. Jordhamo, T. Hughes, A. Katnani, and W. Moreau, 04/03/2001

o JP3202979: Resist composition and process of forming a patterned resist layer on a substrate, Qinghuang Lin, N. Petal, G. Jordhamo, T. Hughes, A. Katnani, and W. Moreau, 06/22/2001

o US6187505: Radiation sensitive silicon-containing resists, Qinghuang Lin, A. Katnani, D. LaTulipe, D. Seeger, B. Brunsvold, A. Afzali-Ardakani, 02/13/2001

o US6103447: Approach to formulating irradiation sensitive positive resists, K.J. Chen, R.A. DellaGuardia, W.S. Huang, A.D. Katnani, M. Khojasteh, Qinghuang Lin, 08/15/2000

o US6087064: Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method, Qinghuang Lin, A.D. Katnani, M. Angelopoulos, R. Sooriyakumaran, 07/11/2000

 


Pending Patents

o  US20160220996A1: Nanochannel Device with Three Dimensional Gradient by Single Step Etching for Molecular Detection, Jingwei Bai, Qinghuang Lin, Gustavo Stolovitzky, Chao Wang, and Deqiang Wang, 08/04/2016

o  US20160209394A1: Nanofluidic Channels with Gradual Depth Change for Reducing Entropic Barrier of Biopolymers, Qinghuang Lin, Gustavo Stolovitzky, Chao Wang, and Deqiang Wang,  07/21/2016

o  US20160199833A1: Nanofluidic Channels with Gradual Depth Change for Reducing Entropic Barrier of Biopolymers, Qinghuang Lin, Gustavo Stolovitzky, Chao Wang, and Deqiang Wang,  07/14/2016

o   US20150318208A1: Middle-End-of-The-Line Structure and Method of Fabrication, Qinghuang Lin, Ying Zhang, 11/05/2015

o   US20150280006A1: Printed Transistor and Fabrication Method, Minhua Lu, Qinghuang Lin, and Robert Wisnieff, 10/01/2015

o   US20150270219A1: Interconnect Structure and Method of Fabricating Permanent On-Chip Interconnect Structures by Image Reversal, R. L. Bruce, Qinghuang Lin, A. Nelson, S. V. Nitta, D. Pfeiffer, 09/24/2015

 o   US20150255337A1: Interconnect Structures with Functional Components and Methods For Fabrication, Qinghuang Lin and Dirk Pheiffer, 09/10/2015

 o   US20150252414A1: Nanochannel Device with Three Dimensional Gradient by Single Step Etching for Molecular Detection, Jingwei Bai, Qinghuang Lin, Gustavo Stolovitzky, Chao Wang, Deqiang Wang, 09/10/2015

o    US20150205174A1: Liquid Crystal Integrated Circuit and Method to Fabricate Same, Minhua Lu, Qinghuang Lin, and Robert Wisnieff, 07/23/2015

 o   US20150192818A1: Liquid Crystal Integrated Circuit and Method to Fabricate Same, Minhua Lu, Qinghuang Lin, and Robert Wisnieff, 07/09/2015

 o   US20150189743A1: Photo-Patternable Dielectric Materials and Formulations and Methods of Use, Robert D. Allen, Phillip Joe Brock, Blake W. Davis, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, and Ratnam Sooriyakumaran, 07/02/2015

o  US20150054122A1: Method for forming self-aligned airgap interconnect structures, Qinghuang Lin, Cyril Cabral Jr., and Benjamin Fletcher,02/26/2015

o US20150024549A1: Alignment of Integrated Circuit Chip Stack, E. Colgan, S. A. Cordes, D. Edelstein, V. Khanna, K. Latzko, Qinghuang Lin, P. J. Sorce, S. Sri-Jayantha, R. Wisnieff, R. Yu, 01/22/2015

o US20150024115A1: Nanofluidic Channels with Gradual Depth Change for Reducing Entropic Barrier of Biopolymers, Qinghuang Lin, Gustavo Stolovitzky, Chao Wang, Deqiang Wang, 01/22/2015

o US20150021187A1: Nanofluidic Channels with Gradual Depth Change for Reducing Entropic Barrier of Biopolymers, Qinghuang Lin, Gustavo Stolovitzky, Chao Wang, Deqiang Wang, 01/22/2015

o US20140256133A1: Post Metal Chemical-Mechanical Planarization Cleaning Process, V. Devarapalli, C. J. Goyette, M. R. Kennett, M. Khojasteh, Qinghuang Lin, J. J. Steffes, A. Ticknor, W. Tseng, 09/11/2014

o US20140131880A1: Method for Fabrication of an Air Gap Containing Interconnect Structure, Larry Clevenger, Maxime Darnon, Anthony D Lisi, Satya V Nitta, Qinghuang Lin, 05/15//2014

o US20140127896A1: Method of Forming a Graphene Cap for Copper Interconnect Structures, Griselda Bonilla, Christos D. Dimitrakopoulos, Alfred Grill, James B. Hannon, Qinghuang Lin, Deborah A. Neumayer, Satoshi Oida, John A. Ott, and Dirk Pfeiffer, 05/08/2014

o US20130330923A1: Middle-End-of-The-Line Structure and Method of Fabrication, Qinghuang Lin and Ying Zhang, 12/12/2013

o US20130302978A1: Method of Forming a Graphene Cap for Copper Interconnect Structures, Griselda Bonilla, Christos D. Dimitrakopoulos, Alfred Grill, James B. Hannon, Qinghuang Lin, Deborah A. Neumayer, Satoshi Oida, John A. Ott, and Dirk Pfeiffer, 11/14/2013

o US20130299883A1: Printed Transistor and Fabrication Method, Qinghuang Lin, Minhua Lu, Robert Wisnieff, 11/14/2013

o US20130292163A1: Photopatternable dielectric materials and formulations and methods of use, R. Allen, P. Brock, B. Davis, Qinghuang Lin, R. Miller, A. Nelson, R. Sooriyakumaran, 11/07/2013

o US20130207278A1: Photo-Patternable Dielectric Materials Curable to Porous Dielectric Materials, Formulations, Precursors and Methods of Use Thereof, Phillip J. Brock, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, Jitendra S. Rathore, and Ratnam Sooriyakumaran, 08/15/2013

o US20130207272A1: Airgap-Containing Interconnect Structures with Patternable Low-K Materials and Method of Fabricating, Qinghuang Lin, 08/15/2013

o US20130189836A1: Photo-Patternable Dielectric Materials Curable to Porous Dielectric Materials, Formulations, Precursors and Methods of Use Thereof, Phillip J. Brock, Blake W. Davis, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, Jitendra S. Rathore, and Ratnam Sooriyakumaran, 07/25/2013

o US20130062732A1: Interconnect Structures with Functional Components and Methods For Fabrication, Qinghuang Lin and Dirk Pheiffer, 03/14/2013

o US20130032949A1: Self-Aligned Fine Pitch Permanent On-Chip Interconnect Structures and Method of Fabrication, Qinghuang Lin, Sanjay Mehta, and Hosadurga K. Shobha, 02/07/2013

o US20130032945A1: Self-Aligned Fine Pitch Permanent On-Chip Interconnect Structures and Method of Fabrication, Qinghuang Lin, Sanjay Mehta, and Hosadurga K. Shobha, 02/07/2013

o US20130009323A1: Interconnect Structure and Method of Fabricating, Qinghuang Lin, Dirk Pfeiffer and Ratnam Sooriyakumaran, 01/10/2013

o US20130009312A1: Interconnect Structures Fabricated Without Reactive-Ion Etch Process, Maxime Darnon, Qinghuang Lin, Elbert Huang and Jeffrey Gambino, 01/10/2013

o US20130001801A1: Method to Form Self-Aligned Permanent On-Chip Interconnect Structures, Qinghuang Lin, 01/03/2013

o US20130001781A1: Structure and Method for Photo-Patternable Low-K (PPLK) Integration, Maxime Darnon, Qinghuang Lin, 01/03/2013

o US20120325532A1: Interconnect Structure Including a Modified Photoresist as a Permanent Interconnect Dielectric and Method of Fabricating Same, Qinghuang Lin, 12/27/2012

o US20120301980A1: Methodology for Evaluation of Electrical Characteristics of Carbon Nanotubes, Maxime Darnon, Gerald Gibson, P. Joshi, and Qinghuang Lin, 11/29/2012

o US20120280398A1: Method for Air Gap Interconnect Integration Using Photo-Patternable Low-K Material, Larry Clevenger, Maxime Darnon, Qinghuang Lin, Anthony D Lisi, Satya V Nitta, 11/08//2012

o US20120261829A1: Middle-End-of-The-Line Structure and Method of Fabrication, Qinghuang Lin, Ying Zhang, 10/18/2012

o US20120261828A1: Interconnect Structure and Method of Fabricating Permanent On-Chip Interconnect Structures by Image Reversal, R. L. Bruce, Qinghuang Lin, A. Nelson, S. V. Nitta, D. Pfeiffer, 10/18/2012

o US20120261788A1: Self-Aligned Airgap Interconnect Structures and Method of Fabrication, Qinghuang Lin, Cyril Cabral Jr., Benjamin Fletcher, 10/18/2012

o US20120252204A1: Patternable Low-K Dielectric Interconnect Structure With a Graded Cap Layer and Method of Fabrication, Qinghuang Lin and Deborah A. Neumayer, 10/04/2012

o US20120228775A1: Airgap Interconnect Structures with Patternable Low-K Materials and Method of Fabrication, Qinghuang Lin, 09/13/2012

o US20120231622A1: Self-Aligned Dual-Damascene BEOL Structures with Patternable Low-K Material and Method of Forming the Same, S.-T. Chen, Qinghuang Lin, S. Purushothaman, T. Spooner, S. Walsh, 09/13/2012

o US20120205818A1: Self-Aligned Permanent On-Chip Interconnect Structure Formed by Pitch Splitting, Qinghuang Lin, 08/16/2012

o US20120181506A1: High-Speed Graphene Transistor and Method of Fabrication by Patternable Hard Mask Materials, Darmon B. Farmer, Qinghuang Lin, Yu-ming Lin, 07/19/2012

o US20120161296A1: Multiple Patterning Using Improved Patternable Low-K Dielectric Materials, Qinghuang Lin, 06/28/2012

o US20120032336A1: Self-Aligned Permanent On-Chip Interconnect Structure Formed by Pitch Splitting, Qinghuang Lin, 02/09/2012

o US20120018891A1: Methods to Form Self-Aligned Permanent On-Chip Interconnect Structures, Qinghuang Lin, 01/26/2012

o US20110318942A1: Mechanically Robust Metal/Low-K Interconnects, Qinghuang Lin, T. Spooner, D. Gandhi, C. Tyberg, 12/29/2011

o US20110312177A1: Patternable Dielectric Film Structure With Improved Lithography and Method of Fabricating Same, Qinghuang Lin and Deborah A. Neumayer, 12/22/2011

o US20110311781A1: Method of Patterning Photosensitive Material on a Substrate Containing a Latent Acid Generator, M. Darnon, P. Joshi, and Qinghuang Lin, 12/22/2011

o US20110309507A1: Methodology for Evaluation of Electrical Characteristics of Carbon Nanotubes, Maxime Darnon, Gerald Gibson, P. Joshi, and Qinghuang Lin, 12/22/2011

o US20110304053A1: Interconnect Structure and Method of Fabricating, Qinghuang Lin, Dirk Pfeiffer, Ratnam Sooriyakumaran, 12/15/2011

o US20110291284A1: Interconnect Structure With an Oxygen-Doped SiC Antireflective Coating and Method of Fabrication, D. Goldfarb, R. Kwong, Qinghuang Lin, D. Neumayer, H. Shobha, 12/01/2011

o WO2011147670/EP2011057409: Interconnect Structure, Qinghuang Lin , D. Goldfarb, R. Kwong, D. Neumayer, H. Shobha, 12/01/2011

o US20110272810A1: Structure and Methods for Air Gap Integration, Larry Clevenger, Maxime Darnon, Qinghuang Lin, Anthony D Lisi, Satya V Nitta, 11/10/2011

o US20110260326A1: Structures and Methods for Air Gap Integration, Larry Clevenger, Maxime Darnon, Qinghuang Lin, Anthony D Lisi, Satya V Nitta, 10/27/2011

o US20110221062A1: Methods for Fabrication of an Air Gap-Containing Interconnect Structure, Maxime Darnon, Satya V Nitta, Larry Clevenger, Anthony D Lisi, Qinghuang Lin, 09/15/2011

o US20110115094A1: Structure and Method for Photo-Patternable Low-K Integration, Maxime Darnon, Qinghuang Lin, 05/19/2011

o US20110115090A1: Interconnect Structure Including a Modified Photoresist as a Permanent Interconnect Dielectric and Method of Fabricating Same, Qinghuang Lin, 05/19/2011

o WO2011057832: Photo-Patternable Dielectric Materials and Formulations and Methods of Use, Alshakim Nelson, Phillip Joe Brock, Ratnam Sooriyakumaran, Blake Davis, Robert Dennis Miller, Robert David Allen, Qinghuang Lin, 05/19/2011

o US20110083887A1: Photo-Patternable Dielectric Materials Curable to Porous Dielectric Materials, Formulations, Precursors and Methods of Use Thereof, P. Brock, B. Davis, Qinghuang Lin, R. Miller, A. Nelson, J. S. Rathore, R. Sooriyakumaran, 04/14/2011

o WO2011038995: Patternable Low-K Dielectric Interconnect Structure With a Graded Cap Layer and Method of Fabrication, Qinghuang Lin, D. Neumayer, 04/07/2011

o US20110074044A1: Patternable Low-K Dielectric Interconnect Structure With a Graded Cap Layer and Method of Fabrication, Qinghuang Lin, D. Neumayer, 03/31/2011

o US20110048787A1: Photo-Patternable Dielectric Materials and Formulations and Methods of Use, R. Allen, P. Brock, B. Davis, Qinghuang Lin, R. Miller, A. Nelson, R. Sooriyakumaran, 03/03/2011

o US20110045387A1: Method of Forming a Relief Pattern by E-Beam Lithography Using Chemical Amplification, and Derived Articles, Alshakim Nelson, Ratnam Sooriyakumaran, Luisa Bozano, Qinghuang Lin, Robert Allen, Phillip Brock, 02/24/2011

o US20110042790A1: Multiple Patterning Using Improved Patternable Low-K Dielectric Materials, Qinghuang Lin, 02/24/2011

o US20100319971A1: Airgap Interconnect Structures with Improved Patternable Low-K Materials and Method of Fabrication, Qinghuang Lin, 12/23/2010

o US20100314768A1: Interconnect Structures Fabricated Without Reactive-Ion Etch Process, Maxime Darnon, Qinghuang Lin, Elbert Huang, Jeffrey Gambino, 12/16/2010

o US20100314767A1: Self-Aligned Dual-Damascene BEOL Structures With Patternable Low-K Material and Method of Forming the Same, S.-T. Chen, Qinghuang Lin, S. Purushothaman, T. Spooner, S. Walsh, 12/16/2010

o US20100283157A1: Interconnect Structures with Patternable Low-K Dielectrics and Method of Fabricating Same, Qinghuang Lin, Shyng-Tsong Chen, 11/11/2010

o US20100207276A1: Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures, R. Allen, P. Brock, B. Davis, W. Huang, Qinghuang Lin, A. Nelson, S. Purushothaman, R. Sooriyakumaran, 08/19/2010

o US20090291389A1: Photopatternable dielectric materials for BEOL applications and method for use, R. Allen, P. Brock, B. Davis, G. J.-M. Dubois, Qinghuang Lin, R. Miller, A. Nelson, S. Purushothaman, R. Sooriyakumaran, 11/26/2009

o US20090233226A1: Photopatternable dielectric materials for BEOL applications and method for use, R. Allen, P. Brock, B. Davis, Qinghuang Lin, R. Miller, A. Nelson, 09/17/2009

o US20090181178A1: SiCOH Dielectric Material With Improved Toughness and Improved Si-C Bonding, Semiconductor Device Containing the Same, and Method to Make the Same, A. Grill, S.M. Gates, Qinghuang Lin, M. Lane, D.C. Edelstein, D.A. Neumayer, R.D. Miller, S.V. Nguyen, 07/16/2009

o US20090174067A1: Airgap-containing interconnect structure with patternable low-k material and method of fabricating, Qinghuang Lin, 07/09/2009

o WO2009039523: Interconnect Structures Containing Patternable Low-K Dielectrics and Methods of Fabricating Same, Qinghuang Lin, Shyng-Tsong Chen, 03/26/2009

o US20090081418A1: Spin-on anti-reflective coating for integration of patternable dielectric materials and interconnect structures, R. Allen, P. Brock, B. Davis, W. Huang, Qinghuang Lin, A. Nelson, S. Purushothaman, R. Sooriyakumaran, 03/26/2009

o US20090079076A1: Patternable dielectric film structure with improved lithography and method of fabricating same, Qinghuang Lin, D. Neumayer, 03/26/2009

o US20090079075A1: Interconnect structures with patternable low-k dielectrics and method of fabricating same, Qinghuang Lin, S. Chen, 03/26/2009

o US20090026625A1: Adhesion enhancement for metal/dielectric interface, Chih-Chao Yang, Griselda Bonilla, Qinghuang Lin, Terry A. Spooner, 01/29/2009

o US20090023284A1: Integrated wafer processing system for integration of patternable dielectric materials, Qinghuang Lin, S. Purushothaman, R. Wisnieff, 01/22/2009

o US20080315347A1: Providing Gaps in Capping Layer to Reduce Tensile Stress for BEOL Fabrication of Integrated Circuits, Griselda Bonilla, Shyng-Tsong Chen, Ronald A. DellaGuardia, Qinghuang Lin, Kelly Malone, Shom S. Ponoth, Chih-Chao Yang, 12/25/2008

o US20080286467A1: Method of Use for Photopatternable Dielectric Materials for BEOL Applications, Robert D. Allen, Phillip Brock, Blake W. Davis, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, Ratnam Sooriyakumaran, 11/20/2008

o US20080200034A1: Method to Remove BEOL Sacrificial Materials and Chemical Residues by Irradiation, Qinghuang Lin, Elbert Huang, Christy S.Tyberg, Ronald Dellaguardia, 08/21/2008

o US20080173984A1: Mechanically Robust Metal/Low-K Interconnects, Qinghuang Lin, Terry A. Spooner, Darshan D. Gandhi, Christy S.Tyberg, 07/24/2008

o US20080150091A1: Multiple Patterning Using Patternable Low-K Dielectric Materials, Qinghuang Lin, 06/26/2008

o US20080124650A1: Multilayered Resist Systems Using Tuned Polymer Films as Underlayers and Methods of Fabrication Thereof, Marie Angelopoulos, Katherina E. Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R. Medeiros, Wayne Martin Moreau, Karen E. Petrillo, John P. Simons, 05/29/2008

o US20080124649A1: Multilayered Resist Systems Using Tuned Polymer Films as Underlayers and Methods of Fabrication Thereof, Marie Angelopoulos, Katherina E. Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R. Medeiros, Wayne Martin Moreau, Karen E. Petrillo, John P. Simons, 05/29/2008

o US20060183314A1: Method for Fabricating Interconnect Structures with Reduced Plasma Damage, Ronald Dellaguardia, Elbert Huang, Qinghuang Lin, Robert Miller, 08/17/2006

o US20060105181A1: Patternable Low Dielectric Constant Materials and Their Use In ULSI Interconnection, Qinghuang Lin, R. Sooriyakumaran, 05/18/2006

o US20060089000A1: Material and Process for Etched Structure Filling and Planarizing, Ronald A. DellaGuardia, Ranee Kwong, Wenjie Li, Qinghuang Lin, Dirk Pfeiffer, David L. Rath, 04/27/2006

o US20060012014A1: Reliability of low-k dielectric devices with energy dissipative layer, Shyng-Tsong Chen, Stefanie R.Chiras, Michael Lane, Qinghuang Lin, Robert Rosenberg, Thomas M. Shaw, Terry A. Spooner, 01/19/2006

o US20050112382A1: Molecular photoresists containing nonpolymeric silsesquioxanes, Robert David Allen, Wu-Song Huang, Mahmoud Khojasteh, Qinghuang Lin, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa D.Truong, 05/26/2005

o US20040048204A1: Radiation sensitive silicon-containing negative resists and use thereof, Marie Angelopoulos, Ari Aviram, Wu-Song Huang, Ranee Kwong, Robert N. Lang, Qinghuang Lin, Wayne M. Moreau, 03/11/2004

o US20020115017A1: Radiation sensitive silicon-containing negative resists and use thereof, Marie Angelopoulos, Ari Aviram, Wu-Song Huang, Ranee Kwong, Robert N. Lang, Qinghuang Lin, Wayne M. Moreau, 08/22/2002

o EP0939340A1: Radiation sensitive resists, K.J. Chen, R.A. DellaGuardia, W.S. Huang, A.D. Katnani, M. Khojasteh, Qinghuang Lin, 09/01/1999