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Research Areas
Additional Information
Background
Chemically Amplified Resists (CAR)
- QCM/Reflectance Analysis of Dissolution Kinetics
- Kinetic model for resist dissolution
- Teas Solubility Parameter Map
Current Projects
EUV Materials
E-Beam Materials
Directed Self-Assembly
Exploratory
- DNA Origami
- Nanoprobe
Project Name
The following picture of image blur emerges from our studies of TBOC photoresist, a model system that typifies the imaging chemistry of current CA resists.
In practical application, photoresist exposure is carried out using an optical projection tool that, at
its resolution limit, produces an aerial image that is diffuse in comparison to the photomask template (see
figure below),
a consequence of diffraction and scattering within the tool optics. When the resist film
is exposed, acid is formed as a replica of this aerial image, so even prior to post-expose processing
there is a significant amount of acid present in nominally unexposed regions. That acid will catalyze
deprotection, though at a slower rate than in the center of the exposed region. The net effect of this is
that the deprotected image will broaden with increasing post-expose heating time, even in the absence of
significant acid diffusion. At large spatial scales (in the TBOC photoresist, at linewidths greater than
50 nm), this is the dominant source of image blur. Independently, gradient-driven (Fickian) diffusion can
also play a role. Its contribution to image blur depends on the mobility of the acid and on the spatial
scale of the image. Diffusion is the dominant factor at small spatial scales (in the TBOC photoresist, at
linewidths less than 50 nm).













