Conference paper
High-speed optical receivers in advanced silicon technologies
J. Schaub, S.M. Csutak, et al.
LEOS 2002
We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9 dBm (bit error ratio < 10-9) at 10 Gb/s was achieved.
J. Schaub, S.M. Csutak, et al.
LEOS 2002
S.M. Csutak, J. Schaub, et al.
Journal of Lightwave Technology
J.A. Kash, F.E. Doany, et al.
LEOS 2005
S.M. Csutak, J. Schaub, et al.
IEE Proceedings: Optoelectronics