Conference paper
23 ps/2.1 mW ECL gate
Kai-Yap Toh, C.T. Chuang, et al.
ISSCC 1989
An ECL circuit with a charge-buffered active-pull-down emitter-follower stage is described. Implemented in a 0-8 /an double-poly trench-isolated selfaligned bipolar process, unloaded gate delays of 14.9ps/2.2mW, 20.7ps/1.2mW, and 24.5ps/0.77mW have been achieved. © 1992, The Institution of Electrical Engineers. All rights reserved.
Kai-Yap Toh, C.T. Chuang, et al.
ISSCC 1989
B.S. Wu, C.T. Chuang, et al.
IEEE Journal of Solid-State Circuits
J. Warnock, D.D. Awschalom
Physical Review B
R.V. Joshi, W. Hwang, et al.
ISLPED 2000