A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
A structural and mechanistic model for initial room temperature Fe epitaxy on Cu(100) is presented, based on scanning tunneling microscopy data. Changes in Fe atom attachment kinetics with coverage θ yield several growth regimes: Fe incorporation into the surface by atomic exchange with Cu (θ < 0.2), growth of first-layer Fe islands (0.2 < θ < 0.7), and simultaneous layer-1 and layer-2 growth (0.7 < θ < 2). These results reconcile qualitative disparities in previous interpretations of experimental results. © 1994.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics