A. Gupta, T.R. McGuire, et al.
Applied Physics Letters
A three-terminal spin-torque-driven magnetic switch is experimentally demonstrated. The device uses nonlocal spin current and spin accumulation as the main mechanism for current-driven magnetic switching. It separates the current-induced write operation from that of a magnetic tunnel junction based read. The write current only passes through metallic structures, improving device reliability. The device structure makes efficient use of lithography capabilities, important for robust process integration. © 2009 American Institute of Physics.
A. Gupta, T.R. McGuire, et al.
Applied Physics Letters
B. Özyilmaz, A.D. Kent, et al.
Physical Review Letters
C. Wang, Y.-T. Cui, et al.
Physical Review B - CMMP
Y. Guan, J.Z. Sun, et al.
Applied Physics Letters