J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
We have measured the two-terminal AC conductance of (AlGa)AsGaAs heterostructures and a silicon MOSFET up to 50 MHz. While the ungated heterostructure samples show no frequency dependence in the integer and no additional structure in the fractional quantum Hall regimes, the gated silicon MOSFET shows strong frequency dependence of the two-terminal AC conductance due to coupling of the signal from the 2DEG to the gate. We have also measured the capacitance of the silicon MOSFET under the same circumstances, and thereby confirm the role of the gate in coupling the high frequency signal. © 1986.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
Mark W. Dowley
Solid State Communications