R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
Bisphenol‐A polysulfone, poly(oxy‐1,4‐phenylenesulfonyl‐1,4‐phenyleneoxy‐1, 4‐phenyleneisopropylidene‐1,4‐phenylene), PSF (I) showed greatly reduced resistance to electron beam irradiation when subjected simultaneously to an applied tensile stress. The creep rate increased, and the time (dose) to failure of the sample decreased with increasing stress. The failure strain was constant for different applied stresses. Air, oxygen, and moisture caused decreases in radiation resistance compared with a dry nitrogen atmosphere. Increasing the irradiation temperature from 0 to 90°C resulted in substantially decreased radiation resistance. Copyright © 1992 John Wiley & Sons, Inc.
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
R. Ghez, J.S. Lew
Journal of Crystal Growth
Imran Nasim, Melanie Weber
SCML 2024
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992