G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
We study the concentration of adatoms on GaAs(001) during annealing under MBE conditions. By rapidly cooling the sample from typical growth temperatures and typical As overpressures, the thermal concentration of adatoms can be frozen into small islands on the terraces. The area of the resulting islands is measured with STM far from terrace steps, giving an estimate of the concentration of adatoms during equilibrium. We find that a surprisingly large concentration of adatoms is present for typical growth temperatures, e.g. 0.18 monolayer at 600°C. Possible consequences for current growth models are discussed.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
A. Gangulee, F.M. D'Heurle
Thin Solid Films
J. Tersoff
Applied Surface Science
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011