Resist freezing process for double exposure lithography
Kuang-Jung Rex Chen, Wu-Song Huang, et al.
SPIE Advanced Lithography 2008
A series of de-protected polymers with pre-determined levels of de-protection were prepared in two types of high-resolution 248nm positive chemically amplified (CA) resists: conventional resists and silicon containing resists. The morphology and surface roughness of blend films of the protected and the de-protected polymers were monitored throughout the standard resist processing steps by using atomic force microscopy (AFM). Results suggest that resist line edge roughness stems in a large part from the phase incompatibility of the protected and the de-protected polymers in the line edge regions for positive CA resists.
Kuang-Jung Rex Chen, Wu-Song Huang, et al.
SPIE Advanced Lithography 2008
Hiroshi Ito, Hoa D. Truong, et al.
Microlithography 2005
Dirk Pfeiffer, Arpan Mahorowala, et al.
Microlithography 2003
Brian Ashe, Christina Deverich, et al.
Proceedings of SPIE - The International Society for Optical Engineering