A.C. Callegari, D.A. Buchanan, et al.
Applied Physics Letters
High-efficiency p-Ga1-xAlxAs, p-GaAs, n-GaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped Ga-Al-As melt. This one-step growth procedure produces a graded band gap p-Ga1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured.
A.C. Callegari, D.A. Buchanan, et al.
Applied Physics Letters
M.H. Pilkuhn, H. Rupprecht, et al.
Proceedings of the IEEE
R.M. Feenstra, J. Woodall, et al.
ICDS 1993
P. Solomon, K.W. Guarini, et al.
IEEE Circuits and Devices Magazine