T.P. Chin, P.D. Kirchner, et al.
Applied Physics Letters
Paper
An isothermal etchback-regrowth method for high-efficiency Ga 1-xAlxAs-GaAs solar cells
Abstract
High-efficiency p-Ga1-xAlxAs, p-GaAs, n-GaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped Ga-Al-As melt. This one-step growth procedure produces a graded band gap p-Ga1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured.
Related
M.A. Tischler, D.C. Latulipe, et al.
Journal of Crystal Growth
Alan C. Warren, J. Woodall, et al.
IEE/LEOS Summer Topical Meetings 1991
D.L. Rogers, J. Woodall, et al.
IEEE T-ED