S. Chang, L.J. Brillson, et al.
Physical Review Letters
High-efficiency p-Ga1-xAlxAs, p-GaAs, n-GaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped Ga-Al-As melt. This one-step growth procedure produces a graded band gap p-Ga1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured.
S. Chang, L.J. Brillson, et al.
Physical Review Letters
F. Assaderaghi, G. Shahidi, et al.
VLSI Technology 1996
H. Rupprecht, J. Woodall, et al.
Applied Physics Letters
T.S. Plaskett, J. Woodall, et al.
JES