An isothermal etchback-regrowth method for high-efficiency Ga 1-xAlxAs-GaAs solar cells

J. Woodall; H.J. Hovel

doi:10.1063/1.89461

Applied Physics Letters

Paper

26 Aug 2008

An isothermal etchback-regrowth method for high-efficiency Ga _1-xAl_xAs-GaAs solar cells

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Abstract

High-efficiency p-Ga1-xAlxAs, p-GaAs, n-GaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped Ga-Al-As melt. This one-step growth procedure produces a graded band gap p-Ga1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured.

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Abstract

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