David J. Frank, Yuan Taur
Solid-State Electronics
A one-dimensional (1-D) analytical solution is derived for an undoped (or lightly-doped) double-gate MOSFET by incorporating only the mobile charge term in Poisson's equation. The solution gives closed forms of band bending and volume inversion as a function of silicon thickness and gate voltage. A threshold criterion is derived which serves to quantify the gate work function requirements for a double-gate CMOS.
David J. Frank, Yuan Taur
Solid-State Electronics
Rick L. Mohler, Christopher W. Long, et al.
IEEE Journal of Solid-State Circuits
Yo-Chuol Ho, Ki-Hong Kim, et al.
IEEE Journal of Solid-State Circuits
Yuan Taur, Jack Yuan-Chen Sun, et al.
IEEE T-ED