H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Paper
Anisotropic transport of two-dimensional holes in high Landau levels
Abstract
Qualitatively similar anomalies in a high-mobility GaAs/AlGaAs 2D hole system (2DHS) are presented. Magnetoresistance data taken along [233] and [011] directions in a GaAs/AlGaAs 2D hole sample with van der Pauw geometry exhibit significant anisotropy at half-integer filling factors. The anisotropy depend on both the density and symmetry of the hole charge distribution.
Related
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990