Conference paper
Hot electron luminescence-a comparison of GaAs and InP
J.A. Kash
QELS 1992
The valence subband dispersion of GaAs/AlGaAs quantum wells is measured with meV accuracy using the recombination of hot electrons at neutral acceptors. This precision, in combination with polarization-dependent matrix elements, allows direct observation and measurement of the warping. The measurements, for in-plane wave vectors which extend over a substantial fraction of the Brillouin zone, are shown to be in very good agreement with kp calculations. © 1992 The American Physical Society.
J.A. Kash
QELS 1992
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