C. Lavoie, C. Cabral Jr., et al.
Defect and Diffusion Forum
Paper
Annealing behavior of Cu and dilute Cu-alloy films: Precipitation, grain growth, and resistivity
Abstract
Annealing behavior of Cu and dilute Cu-alloy films was analyzed. Annealing at 400 °C for 5 h or 650 or 950 °C for 0 h led to a reduction in resistivity as a result of grain growth and alloy decomposition by precipitation and/or surface segregation. The higher the annealing temperature, the lower the resistivity.
Related
K. Barmak, C. Cabral, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
A. Quintero, M. Libera, et al.
Journal of Applied Physics
A.S. Özean, K.F. Ludwig Jr., et al.
MRS Proceedings 2002