R. Ghez, J.S. Lew
Journal of Crystal Growth
We have observed an anomalous coverage dependence of sputtered Cs+ and Li+ yields from Cs and Li overlayers on Si(111) surfaces. The ion yield reaches a maximum and decreases at higher coverages even when the coverage is still less than a monolayer. We found that this phenomenon is directly related to the effect of the work function on the ionization probability. © 1984 The American Physical Society.
R. Ghez, J.S. Lew
Journal of Crystal Growth
R. Ghez, M.B. Small
JES
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
H.D. Dulman, R.H. Pantell, et al.
Physical Review B