Conference paper
Investigations of silicon nano-crystal floating gate memories
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MRS Spring 2000
We show that at high temperatures, the columnar defects generated in YBaCuO crystals by 0.58 GeV 116Sn30+ have a natural splay of ≈10° and produce a 10 times larger persistent current density and a 10 times smaller creep rate, than well aligned tracks created by 1.08 GeV 197Sn23+, with splay of only ≈2°. © 1994.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
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