Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The structure of the relaxed GaSb(110) surface has been determined by mass-resolved Rutherford backscattering of He+ ions. From measurements of ion blocking angles it is concluded that the relaxation involves a rotation of the Ga-Sb surface bond by an angle of =29°-4°+7°out of the surface plane. The bond lengths at the surface are shown to remain unchanged. The root-mean-square thermal vibration amplitude of the surface atoms is found to be enhanced with respect to the bulk amplitude by a factor of 1.50.2. © 1984 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules