Harold Hughes, Patrick McMarr, et al.
REDW/NSREC 2015
This paper describes the importance of bipolar current gain and diode ideality factor to predictions of single-event circuit responses. It then reports on measurements of parasitic bipolar transistors in 45 nm Silicon-on-Insulator (SOI) technology, and adjustments to the simulation model to match the measurements. © 2010 IEEE.
Harold Hughes, Patrick McMarr, et al.
REDW/NSREC 2015
Chung-Hsun Lin, Josephine Chang, et al.
IEEE International SOI Conference 2010
Gen Pei, Jakub Kedzierski, et al.
IEEE Transactions on Electron Devices
Pranita Kulkarni, Q. Liu, et al.
SISPAD 2011