Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
An epitaxial film of NdNiO3 was investigated by the resonant X-ray scattering technique. Below the metal-to-insulator transition a pronounced energy dependence of the scattering intensity at the Ni K-edge is observed. This is clear evidence for a charge disproportionation on the Ni site, leading to two different electronic Ni ions. The occurrence of a reflection in the σ-π channel, its weakness and its azimuthal dependence together with a symmetry analysis gives clear indications that the observed energy dependence in the σ-σ channel is not due to the asphericity of the Ni 4p shell, but is directly related to the charge disproportionation. © 2003 Elsevier B.V. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
R.W. Gammon, E. Courtens, et al.
Physical Review B
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter