A. Gangulee, F.M. D'Heurle
Thin Solid Films
The microscopic structure and electronic properties of amorphous silicon carbide at stoichiometric composition have been investigated with ab-initio molecular dynamics simulations. Our results show that a-SiC can be classified neither as chemically ordered nor as completely random and has a structure much more complex that commonly believed. Our data also indicate that a detailed analysis of each atomic species is crucial to the understanding of the material properties. © 1993.
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Revanth Kodoru, Atanu Saha, et al.
arXiv
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Michiel Sprik
Journal of Physics Condensed Matter