J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Chemically induced grain-boundary migration is demonstrated in polycrystalline silicon films. Growth of anomalously large grains, along with dopant depletion, is observed in P-doped polycrystalline Si films annealed at 700°C in the presence of a neighboring TiSi2 film. We propose a novel driving mechanism for migration here, an electrostatic force on the interface due to inhomogeneous dopant depletion. © 1988.
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
P.C. Pattnaik, D.M. Newns
Physical Review B
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films