Conference paper
Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Chemically induced grain-boundary migration is demonstrated in polycrystalline silicon films. Growth of anomalously large grains, along with dopant depletion, is observed in P-doped polycrystalline Si films annealed at 700°C in the presence of a neighboring TiSi2 film. We propose a novel driving mechanism for migration here, an electrostatic force on the interface due to inhomogeneous dopant depletion. © 1988.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering