H. Dallaporta, M. Liehr, et al.
Physical Review B
Paper
Chemistry of fluorine in the oxidation of silicon
Abstract
The chemical environment of fluorine in the oxide layer of metal-oxide-semiconductor (MOS) structures has been examined by surface analytical spectroscopies. HF treatment of Si(100) results in subsurface SiF formation. Upon oxidation, oxyfluoride moieties are formed with a significant accumulation of fluorine throughout the oxide layer. These changes are correlated to the electrical integrity of MOS interfaces by performing Fowler-Nordheim electron injection studies.
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